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NO976070D0 - Felteffekttransistor - Google Patents

Felteffekttransistor

Info

Publication number
NO976070D0
NO976070D0 NO976070A NO976070A NO976070D0 NO 976070 D0 NO976070 D0 NO 976070D0 NO 976070 A NO976070 A NO 976070A NO 976070 A NO976070 A NO 976070A NO 976070 D0 NO976070 D0 NO 976070D0
Authority
NO
Norway
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
NO976070A
Other languages
English (en)
Other versions
NO322204B1 (no
NO976070L (no
Inventor
Makoto Inai
Hiroyuki Seto
Fujio Okui
Susumu Fukuda
Hisashi Ariyoshi
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of NO976070D0 publication Critical patent/NO976070D0/no
Publication of NO976070L publication Critical patent/NO976070L/no
Publication of NO322204B1 publication Critical patent/NO322204B1/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
NO19976070A 1996-12-25 1997-12-23 Felteffekttransistor NO322204B1 (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34479596 1996-12-25
JP33856697A JP3601649B2 (ja) 1996-12-25 1997-12-09 電界効果トランジスタ

Publications (3)

Publication Number Publication Date
NO976070D0 true NO976070D0 (no) 1997-12-23
NO976070L NO976070L (no) 1998-06-26
NO322204B1 NO322204B1 (no) 2006-08-28

Family

ID=26576133

Family Applications (1)

Application Number Title Priority Date Filing Date
NO19976070A NO322204B1 (no) 1996-12-25 1997-12-23 Felteffekttransistor

Country Status (6)

Country Link
US (1) US6008509A (no)
EP (1) EP0851510A3 (no)
JP (1) JP3601649B2 (no)
KR (1) KR100548047B1 (no)
CA (1) CA2225844C (no)
NO (1) NO322204B1 (no)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5994727A (en) * 1997-09-30 1999-11-30 Samsung Electronics Co., Ltd. High performance gaas field effect transistor structure
JP2001077353A (ja) * 1999-06-30 2001-03-23 Toshiba Corp 高電子移動度トランジスタ及び電力増幅器
US6821829B1 (en) 2000-06-12 2004-11-23 Freescale Semiconductor, Inc. Method of manufacturing a semiconductor component and semiconductor component thereof
WO2004086461A2 (en) * 2003-03-21 2004-10-07 North Carolina State University Methods for nanoscale structures from optical lithography and subsequent lateral growth
US20060276043A1 (en) * 2003-03-21 2006-12-07 Johnson Mark A L Method and systems for single- or multi-period edge definition lithography
US6929987B2 (en) * 2003-12-23 2005-08-16 Hrl Laboratories, Llc Microelectronic device fabrication method
CN102369597B (zh) * 2009-04-07 2014-04-09 住友化学株式会社 半导体基板、半导体基板的制造方法、和电子器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6095973A (ja) * 1983-10-31 1985-05-29 Fujitsu Ltd 半導体装置
JPS60189268A (ja) * 1984-03-08 1985-09-26 Fujitsu Ltd 半導体装置
US4745447A (en) * 1985-06-14 1988-05-17 American Telephone And Telegraph Company, At&T Bell Laboratories Gallium arsenide on gallium indium arsenide Schottky barrier device
JPS62239584A (ja) * 1986-04-11 1987-10-20 Hitachi Ltd 半導体装置
US5091759A (en) * 1989-10-30 1992-02-25 Texas Instruments Incorporated Heterostructure field effect transistor
US5150822A (en) * 1989-10-27 1992-09-29 The Wellcome Foundation Limited Mixing head for dispensing an actine ingredient
JP2924239B2 (ja) * 1991-03-26 1999-07-26 三菱電機株式会社 電界効果トランジスタ
US5331410A (en) * 1991-04-26 1994-07-19 Sumitomo Electric Industries, Ltd. Field effect transistor having a sandwiched channel layer
FR2684806B1 (fr) * 1991-12-06 1994-03-18 Picogiga Sa Composant semiconducteur de puissance de type transistor a effet de champ, notamment a heterojonction.
JPH06333956A (ja) * 1992-08-26 1994-12-02 Sanyo Electric Co Ltd 電界効果型半導体装置
JP2611735B2 (ja) * 1993-12-22 1997-05-21 日本電気株式会社 ヘテロ接合ｆｅｔ
JP2661555B2 (ja) * 1994-08-16 1997-10-08 日本電気株式会社 ヘテロ接合電界効果トランジスタ

Also Published As

Publication number Publication date
US6008509A (en) 1999-12-28
EP0851510A3 (en) 1999-02-24
KR19980064470A (ko) 1998-10-07
JPH10242451A (ja) 1998-09-11
EP0851510A2 (en) 1998-07-01
CA2225844A1 (en) 1998-06-25
KR100548047B1 (ko) 2007-11-09
NO322204B1 (no) 2006-08-28
NO976070L (no) 1998-06-26
CA2225844C (en) 2001-11-06
JP3601649B2 (ja) 2004-12-15

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Legal Events

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