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DE69526328D1 - Feldeffektanordnung - Google Patents

Feldeffektanordnung

Info

Publication number
DE69526328D1
DE69526328D1 DE69526328T DE69526328T DE69526328D1 DE 69526328 D1 DE69526328 D1 DE 69526328D1 DE 69526328 T DE69526328 T DE 69526328T DE 69526328 T DE69526328 T DE 69526328T DE 69526328 D1 DE69526328 D1 DE 69526328D1
Authority
DE
Germany
Prior art keywords
field effect
effect arrangement
arrangement
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69526328T
Other languages
English (en)
Other versions
DE69526328T2 (de
Inventor
Dort Jeroen Van
Jan Walker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69526328D1 publication Critical patent/DE69526328D1/de
Application granted granted Critical
Publication of DE69526328T2 publication Critical patent/DE69526328T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
DE69526328T 1994-10-28 1995-10-20 Feldeffektanordnung Expired - Lifetime DE69526328T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203146 1994-10-28
PCT/IB1995/000897 WO1996013863A2 (en) 1994-10-28 1995-10-20 Field effect device

Publications (2)

Publication Number Publication Date
DE69526328D1 true DE69526328D1 (de) 2002-05-16
DE69526328T2 DE69526328T2 (de) 2002-11-21

Family

ID=8217325

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526328T Expired - Lifetime DE69526328T2 (de) 1994-10-28 1995-10-20 Feldeffektanordnung

Country Status (7)

Country Link
US (1) US5828099A (de)
EP (1) EP0737366B1 (de)
JP (1) JP3762433B2 (de)
KR (1) KR100350819B1 (de)
DE (1) DE69526328T2 (de)
TW (1) TW490082U (de)
WO (1) WO1996013863A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837584A (en) * 1997-01-15 1998-11-17 Macronix International Co., Ltd. Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
US6417539B2 (en) * 1998-08-04 2002-07-09 Advanced Micro Devices, Inc. High density memory cell assembly and methods
US6172392B1 (en) * 1999-03-29 2001-01-09 Vantis Corporation Boron doped silicon capacitor plate
US6060742A (en) * 1999-06-16 2000-05-09 Worldwide Semiconductor Manufacturing Corporation ETOX cell having bipolar electron injection for substrate-hot-electron program
US6087695A (en) * 1999-08-20 2000-07-11 Worldwide Semiconductor Mfg Source side injection flash EEPROM memory cell with dielectric pillar and operation
US6521958B1 (en) * 1999-08-26 2003-02-18 Micron Technology, Inc. MOSFET technology for programmable address decode and correction
US6518122B1 (en) * 1999-12-17 2003-02-11 Chartered Semiconductor Manufacturing Ltd. Low voltage programmable and erasable flash EEPROM
US6933554B1 (en) * 2000-07-11 2005-08-23 Advanced Micro Devices, Inc. Recessed tunnel oxide profile for improved reliability in NAND devices
US6674667B2 (en) * 2001-02-13 2004-01-06 Micron Technology, Inc. Programmable fuse and antifuse and method therefor
US20020185673A1 (en) 2001-05-02 2002-12-12 Ching-Hsiang Hsu Structure of a low-voltage channel write/erase flash memory cell and fabricating method thereof
CN1293640C (zh) * 2001-06-11 2007-01-03 力晶半导体股份有限公司 无接触点信道写入/抹除的闪存存储单元结构与制造方法
EP1339068B1 (de) * 2002-02-20 2008-05-14 STMicroelectronics S.r.l. Elektrisch programmierbare nichtflüchtige Speicherzelle
EP1349205A1 (de) * 2002-03-28 2003-10-01 eMemory Technology Inc. Struktur einer Niederspannungskanal-Schreib/Lese-FLASH-Speicherzelle und deren Herstellungsverfahren
KR100628642B1 (ko) * 2004-12-31 2006-09-26 동부일렉트로닉스 주식회사 고전압 모스 트랜지스터 및 고전압 모스 트랜지스터의형성방법
US7361551B2 (en) * 2006-02-16 2008-04-22 Freescale Semiconductor, Inc. Method for making an integrated circuit having an embedded non-volatile memory
CN103633118B (zh) * 2012-08-24 2016-12-21 上海华虹宏力半导体制造有限公司 浮栅电可擦除型只读存储器及制造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4577295A (en) * 1983-05-31 1986-03-18 Intel Corporation Hybrid E2 cell and related array
US4769340A (en) * 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
US5036375A (en) * 1986-07-23 1991-07-30 Texas Instruments Incorporated Floating-gate memory cell with tailored doping profile
JPH088314B2 (ja) * 1989-10-11 1996-01-29 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
US5019879A (en) * 1990-03-15 1991-05-28 Chiu Te Long Electrically-flash-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area
JP2602575B2 (ja) * 1990-07-06 1997-04-23 シャープ株式会社 不揮発性半導体記憶装置
US5102814A (en) * 1990-11-02 1992-04-07 Intel Corporation Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
FR2690008B1 (fr) * 1991-05-29 1994-06-10 Gemplus Card Int Memoire avec cellule memoire eeprom a effet capacitif et procede de lecture d'une telle cellule memoire.
US5274588A (en) * 1991-07-25 1993-12-28 Texas Instruments Incorporated Split-gate cell for an EEPROM
US5284784A (en) * 1991-10-02 1994-02-08 National Semiconductor Corporation Buried bit-line source-side injection flash memory cell
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
KR940009644B1 (ko) * 1991-11-19 1994-10-15 삼성전자 주식회사 불휘발성 반도체메모리장치 및 그 제조방법
US5294819A (en) * 1992-11-25 1994-03-15 Information Storage Devices Single-transistor cell EEPROM array for analog or digital storage
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
US5432740A (en) * 1993-10-12 1995-07-11 Texas Instruments Incorporated Low voltage flash EEPROM memory cell with merge select transistor and non-stacked gate structure
US5404037A (en) * 1994-03-17 1995-04-04 National Semiconductor Corporation EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region

Also Published As

Publication number Publication date
KR100350819B1 (ko) 2003-01-15
JP3762433B2 (ja) 2006-04-05
US5828099A (en) 1998-10-27
WO1996013863A2 (en) 1996-05-09
EP0737366B1 (de) 2002-04-10
JPH09507616A (ja) 1997-07-29
TW490082U (en) 2002-06-01
WO1996013863A3 (en) 1996-06-27
EP0737366A1 (de) 1996-10-16
DE69526328T2 (de) 2002-11-21

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL