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DE69330542D1 - Halbleitertransistor - Google Patents

Halbleitertransistor

Info

Publication number
DE69330542D1
DE69330542D1 DE69330542T DE69330542T DE69330542D1 DE 69330542 D1 DE69330542 D1 DE 69330542D1 DE 69330542 T DE69330542 T DE 69330542T DE 69330542 T DE69330542 T DE 69330542T DE 69330542 D1 DE69330542 D1 DE 69330542D1
Authority
DE
Germany
Prior art keywords
semiconductor transistor
transistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69330542T
Other languages
English (en)
Other versions
DE69330542T2 (de
Inventor
Masakazu Morishita
Shigetoshi Sugawa
Toru Koizumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69330542D1 publication Critical patent/DE69330542D1/de
Publication of DE69330542T2 publication Critical patent/DE69330542T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/311—Thin-film BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/637—Lateral IGFETs having no inversion channels, e.g. buried channel lateral IGFETs, normally-on lateral IGFETs or depletion-mode lateral IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
DE69330542T 1992-09-15 1993-09-14 Halbleitertransistor Expired - Fee Related DE69330542T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27097292 1992-09-15
JP5073586A JPH06151859A (ja) 1992-09-15 1993-03-31 半導体装置

Publications (2)

Publication Number Publication Date
DE69330542D1 true DE69330542D1 (de) 2001-09-13
DE69330542T2 DE69330542T2 (de) 2002-06-06

Family

ID=26414728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69330542T Expired - Fee Related DE69330542T2 (de) 1992-09-15 1993-09-14 Halbleitertransistor

Country Status (4)

Country Link
US (3) US5508550A (de)
EP (1) EP0588300B1 (de)
JP (1) JPH06151859A (de)
DE (1) DE69330542T2 (de)

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US5494837A (en) * 1994-09-27 1996-02-27 Purdue Research Foundation Method of forming semiconductor-on-insulator electronic devices by growing monocrystalline semiconducting regions from trench sidewalls
TW556263B (en) * 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
US6034388A (en) * 1998-05-15 2000-03-07 International Business Machines Corporation Depleted polysilicon circuit element and method for producing the same
JP3383219B2 (ja) * 1998-05-22 2003-03-04 シャープ株式会社 Ｓｏｉ半導体装置及びその製造方法
US6855935B2 (en) 2000-03-31 2005-02-15 Canon Kabushiki Kaisha Electromagnetic wave detector
JP2002050767A (ja) * 2000-08-04 2002-02-15 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3485089B2 (ja) * 2000-12-15 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3485092B2 (ja) * 2001-01-19 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3485091B2 (ja) 2001-01-19 2004-01-13 セイコーエプソン株式会社 半導体装置およびその製造方法
JP4489366B2 (ja) * 2003-03-17 2010-06-23 株式会社日立製作所 半導体装置
KR100501706B1 (ko) * 2003-10-16 2005-07-18 삼성에스디아이 주식회사 게이트-바디콘택 박막 트랜지스터
JP2006073627A (ja) * 2004-08-31 2006-03-16 Toshiba Corp 半導体集積装置
JP2007242722A (ja) 2006-03-06 2007-09-20 Renesas Technology Corp 横型バイポーラトランジスタ
US7977752B2 (en) * 2006-06-26 2011-07-12 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
JP2008034826A (ja) * 2006-06-26 2008-02-14 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置、ラテラルバイポーラ薄膜トランジスタ、ハイブリッド薄膜トランジスタ、ｍｏｓ薄膜トランジス、及び薄膜トランジスタの製造方法
JP4573849B2 (ja) 2007-03-28 2010-11-04 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100982310B1 (ko) * 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
JP2010135709A (ja) * 2008-12-03 2010-06-17 Motohiro Oda 新構造半導体集積回路
US8871557B2 (en) * 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
FR2993406B1 (fr) * 2012-07-13 2014-08-22 Commissariat Energie Atomique Circuit integre sur soi comprenant un transistor bipolaire a tranchees d'isolation de profondeurs distinctes
JP2022094263A (ja) * 2020-12-14 2022-06-24 基博 小田 新構造半導体集積回路
US11978733B2 (en) 2021-08-05 2024-05-07 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge devices
US11942472B2 (en) 2021-09-15 2024-03-26 Globalfoundries Singapore Pte. Ltd. High-voltage electrostatic discharge devices
US11990466B2 (en) * 2021-10-14 2024-05-21 Globalfoundries Singapore Pte. Ltd. High voltage electrostatic devices

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US4178190A (en) * 1975-06-30 1979-12-11 Rca Corporation Method of making a bipolar transistor with high-low emitter impurity concentration
US4314267A (en) * 1978-06-13 1982-02-02 Ibm Corporation Dense high performance JFET compatible with NPN transistor formation and merged BIFET
JPS5710267A (en) * 1980-06-23 1982-01-19 Fujitsu Ltd Semiconductor device
US4417325A (en) * 1981-07-13 1983-11-22 Eliyahou Harari Highly scaleable dynamic ram cell with self-signal amplification
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JP2845869B2 (ja) * 1985-03-25 1999-01-13 株式会社日立製作所 半導体集積回路装置
GB2178593B (en) * 1985-08-02 1989-07-26 Stc Plc Transistor manufacture
JPS62110332A (ja) * 1985-11-08 1987-05-21 Citizen Watch Co Ltd 集積回路
EP0251682A3 (de) * 1986-06-25 1989-12-06 Hewlett-Packard Company Integrierte Bipolar/MOS-Anordnung
ATE73963T1 (de) * 1986-12-22 1992-04-15 Philips Nv Komplementaere, laterale silizium-aufisolatorgleichrichter mit isoliertem gate.
US4830973A (en) * 1987-10-06 1989-05-16 Motorola, Inc. Merged complementary bipolar and MOS means and method
US4947192A (en) * 1988-03-07 1990-08-07 Xerox Corporation Monolithic silicon integrated circuit chip for a thermal ink jet printer
US5177584A (en) * 1988-04-11 1993-01-05 Hitachi, Ltd. Semiconductor integrated circuit device having bipolar memory, and method of manufacturing the same
US5040041A (en) * 1988-10-20 1991-08-13 Canon Kabushiki Kaisha Semiconductor device and signal processing device having said device provided therein
JP2746301B2 (ja) * 1988-10-20 1998-05-06 キヤノン株式会社 半導体整流素子
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
JPH02294076A (ja) * 1989-05-08 1990-12-05 Hitachi Ltd 半導体集積回路装置
US4939563A (en) * 1989-08-18 1990-07-03 Ibm Corporation Double carrier deflection high sensitivity magnetic sensor
US5272357A (en) * 1989-11-30 1993-12-21 Canon Kabushiki Kaisha Semiconductor device and electronic device by use of the semiconductor
EP0474564A1 (de) * 1990-09-07 1992-03-11 Fujitsu Limited Lateraler Bipolartransistor mit elektrisch induzierten Emitter und Kollektorzonen
US5075250A (en) * 1991-01-02 1991-12-24 Xerox Corporation Method of fabricating a monolithic integrated circuit chip for a thermal ink jet printhead
EP0554060A3 (en) * 1992-01-31 1993-12-01 Canon Kk Liquid crystal display apparatus
JP3191061B2 (ja) * 1992-01-31 2001-07-23 キヤノン株式会社 半導体装置及び液晶表示装置
US5434441A (en) * 1992-01-31 1995-07-18 Canon Kabushiki Kaisha Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness

Also Published As

Publication number Publication date
JPH06151859A (ja) 1994-05-31
DE69330542T2 (de) 2002-06-06
US5789790A (en) 1998-08-04
EP0588300A2 (de) 1994-03-23
EP0588300A3 (de) 1994-10-12
EP0588300B1 (de) 2001-08-08
US5508550A (en) 1996-04-16
US5998854A (en) 1999-12-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee