DE69825853D1 - Ferroelektrische Speicheranordnung mit Hochgeschwindigkeitsleseschaltung - Google Patents

Ferroelektrische Speicheranordnung mit Hochgeschwindigkeitsleseschaltung

Info

Publication number: DE69825853D1
Authority: DE; Germany
Prior art keywords: memory device; ferroelectric memory; reading circuit; speed reading; speed
Prior art date: 1997-12-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69825853T

Other languages

English (en)

Other versions

DE69825853T2 (de

Inventor

Junichi Yamada

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Electronics Corp

Original Assignee

NEC Electronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-12-26

Filing date

1998-12-23

Publication date

2004-09-30

1998-12-23 Application filed by NEC Electronics Corp filed Critical NEC Electronics Corp

2004-09-30 Publication of DE69825853D1 publication Critical patent/DE69825853D1/de

2005-09-01 Application granted granted Critical

2005-09-01 Publication of DE69825853T2 publication Critical patent/DE69825853T2/de

2018-12-24 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Dram (AREA)

DE69825853T 1997-12-26 1998-12-23 Ferroelektrische Speicheranordnung mit Hochgeschwindigkeitsleseschaltung Expired - Fee Related DE69825853T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP36007497		1997-12-26
JP36007497A JP3196829B2 (ja)	1997-12-26	1997-12-26	強誘電体メモリ装置

Publications (2)

Publication Number	Publication Date
DE69825853D1 true DE69825853D1 (de)	2004-09-30
DE69825853T2 DE69825853T2 (de)	2005-09-01

Family

ID=18467780

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69825853T Expired - Fee Related DE69825853T2 (de)	1997-12-26	1998-12-23	Ferroelektrische Speicheranordnung mit Hochgeschwindigkeitsleseschaltung

Country Status (6)

Country	Link
US (1)	US6278630B1 (de)
EP (1)	EP0926685B1 (de)
JP (1)	JP3196829B2 (de)
KR (1)	KR100303044B1 (de)
DE (1)	DE69825853T2 (de)
TW (1)	TW411466B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US6462193B1 (en) *	1997-02-21	2002-10-08	The Scripps Research Institute	Hydroxyazepanes as inhibitors of glycosidase and HIV protease
US5995407A (en) *	1998-10-13	1999-11-30	Celis Semiconductor Corporation	Self-referencing ferroelectric memory
KR100333702B1 (ko) *	1999-06-28	2002-04-24	박종섭	강유전체 메모리 장치
JP4040243B2 (ja) *	2000-09-08	2008-01-30	株式会社東芝	強誘電体メモリ
KR100379520B1 (ko) *	2000-11-16	2003-04-10	주식회사 하이닉스반도체	불휘발성 강유전체 메모리 장치의 구동방법
JP2002197854A (ja) *	2000-12-22	2002-07-12	Matsushita Electric Ind Co Ltd	強誘電体メモリ装置
KR100733426B1 (ko) *	2001-04-25	2007-06-29	주식회사 하이닉스반도체	강유전체 메모리 장치에서의 기준전압 발생 장치
JP4773631B2 (ja) *	2001-05-25	2011-09-14	富士通セミコンダクター株式会社	連想記憶装置及びプリチャージ方法
US6459609B1 (en) *	2001-12-13	2002-10-01	Ramtron International Corporation	Self referencing 1T/1C ferroelectric random access memory
JP3988696B2 (ja) *	2003-03-27	2007-10-10	ソニー株式会社	データ読出方法及び半導体記憶装置
TW594736B (en)	2003-04-17	2004-06-21	Macronix Int Co Ltd	Over-driven read method and device of ferroelectric memory
JP4061651B2 (ja)	2004-03-15	2008-03-19	セイコーエプソン株式会社	強誘電体メモリ装置及び電子機器
JP4374549B2 (ja)	2005-12-20	2009-12-02	セイコーエプソン株式会社	強誘電体メモリ装置、電子機器および強誘電体メモリ装置の駆動方法
KR100653954B1 (ko) *	2006-01-19	2006-12-05	한국표준과학연구원	나노전자소자 및 그 제조방법
JP4171923B2 (ja)	2006-04-18	2008-10-29	セイコーエプソン株式会社	強誘電体メモリ
US7471546B2 (en) *	2007-01-05	2008-12-30	International Business Machines Corporation	Hierarchical six-transistor SRAM
US7460423B2 (en) *	2007-01-05	2008-12-02	International Business Machines Corporation	Hierarchical 2T-DRAM with self-timed sensing
US7460387B2 (en)	2007-01-05	2008-12-02	International Business Machines Corporation	eDRAM hierarchical differential sense amp
US7499312B2 (en) *	2007-01-05	2009-03-03	International Business Machines Corporation	Fast, stable, SRAM cell using seven devices and hierarchical bit/sense line
KR101530782B1 (ko)	2013-12-03	2015-06-22	연세대학교 산학협력단	영상 부호화 및 복호화 방법, 장치 및 시스템
JP6943600B2 (ja) *	2017-04-18	2021-10-06	ラピスセミコンダクタ株式会社	半導体記憶装置および半導体記憶装置の読み出し方法
JP6860411B2 (ja)	2017-04-27	2021-04-14	ラピスセミコンダクタ株式会社	不揮発性半導体記憶装置
US10403347B2 (en) *	2018-01-29	2019-09-03	Micron Technology, Inc.	Apparatuses and methods for accessing ferroelectric memory including providing reference voltage level

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4873664A (en) *	1987-02-12	1989-10-10	Ramtron Corporation	Self restoring ferroelectric memory
JPH0713877B2 (ja)	1988-10-19	1995-02-15	株式会社東芝	半導体メモリ
JPH02301093A (ja)	1989-05-16	1990-12-13	Mitsubishi Electric Corp	不揮発性半導体記憶装置
US5086412A (en)	1990-11-21	1992-02-04	National Semiconductor Corporation	Sense amplifier and method for ferroelectric memory
US5273927A (en) *	1990-12-03	1993-12-28	Micron Technology, Inc.	Method of making a ferroelectric capacitor and forming local interconnect
US5119154A (en) *	1990-12-03	1992-06-02	Micron Technology, Inc.	Ferroelectric capacitor and method for forming local interconnect
US5262982A (en)	1991-07-18	1993-11-16	National Semiconductor Corporation	Nondestructive reading of a ferroelectric capacitor
JP2876975B2 (ja)	1993-04-09	1999-03-31	松下電器産業株式会社	半導体メモリ装置の製造方法および半導体メモリ装置
JP3274220B2 (ja)	1993-04-16	2002-04-15	株式会社日立製作所	半導体メモリおよびその駆動方法
JPH07192476A (ja)	1993-12-27	1995-07-28	Hitachi Ltd	強誘電体メモリ
JPH0845279A (ja)	1994-08-01	1996-02-16	Hitachi Ltd	不揮発性半導体記憶装置及びその操作方法
JP3593739B2 (ja)	1994-11-28	2004-11-24	ソニー株式会社	強誘電体記憶装置
JPH08203266A (ja) *	1995-01-27	1996-08-09	Nec Corp	強誘電体メモリ装置
US5592410A (en) *	1995-04-10	1997-01-07	Ramtron International Corporation	Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation
JPH098247A (ja)	1995-06-15	1997-01-10	Hitachi Ltd	半導体記憶装置
JP3276104B2 (ja)	1995-08-02	2002-04-22	松下電器産業株式会社	強誘電体メモリ装置
JPH0997496A (ja) *	1995-09-29	1997-04-08	Nec Corp	強誘電体メモリ装置及びデータ読出方法
JP2762971B2 (ja) *	1995-09-30	1998-06-11	日本電気株式会社	半導体記憶装置及びデータのアクセス方法
JPH09245488A (ja)	1996-03-08	1997-09-19	Hitachi Ltd	強誘電体メモリ
US5969979A (en) *	1996-03-25	1999-10-19	Matsushita Electronics Corporation	Ferroelectric memory device
JP3758054B2 (ja) *	1996-08-23	2006-03-22	ローム株式会社	半導体記憶装置
KR100306823B1 (ko) *	1997-06-02	2001-11-30	윤종용	강유전체메모리셀들을구비한불휘발성메모리장치

1997
- 1997-12-26 JP JP36007497A patent/JP3196829B2/ja not_active Expired - Fee Related
1998
- 1998-12-22 US US09/218,084 patent/US6278630B1/en not_active Expired - Lifetime
- 1998-12-23 TW TW087121593A patent/TW411466B/zh active
- 1998-12-23 EP EP98124449A patent/EP0926685B1/de not_active Expired - Lifetime
- 1998-12-23 DE DE69825853T patent/DE69825853T2/de not_active Expired - Fee Related
- 1998-12-24 KR KR1019980058331A patent/KR100303044B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
KR19990063445A (ko)	1999-07-26
EP0926685A3 (de)	1999-11-10
US6278630B1 (en)	2001-08-21
EP0926685B1 (de)	2004-08-25
EP0926685A2 (de)	1999-06-30
TW411466B (en)	2000-11-11
DE69825853T2 (de)	2005-09-01
JP3196829B2 (ja)	2001-08-06
KR100303044B1 (ko)	2001-09-24
JPH11191295A (ja)	1999-07-13

Publication	Publication Date	Title
DE69825853D1 (de)	2004-09-30	Ferroelektrische Speicheranordnung mit Hochgeschwindigkeitsleseschaltung
DE69906006D1 (de)	2003-04-24	Datenverarbeitungs-schaltung mit pufferspeicher
DE69714659D1 (de)	2002-09-19	Halbleiterspeicherbauteil mit Kondensator
DE69815600D1 (de)	2003-07-24	Ferroelektrische Speicheranordnung
DE69841414D1 (de)	2010-02-04	Speicherkarte
DE69517142D1 (de)	2000-06-29	Ferroelektrische Speicheranordnung
DE69813208D1 (de)	2003-05-15	Chipkarte mit datenumsetzer
DE69525421D1 (de)	2002-03-21	Integrierte Speicherschaltungsanordnung
DE69706559D1 (de)	2001-10-11	Kontaktlose speicherkarte
DE69225537D1 (de)	1998-06-25	Integrierte Speicherschaltung
DE69124291D1 (de)	1997-03-06	Halbleiterspeicher mit verbesserter Leseanordnung
DE69921215D1 (de)	2004-11-25	Ferroelektrische Speicheranordnung
DE69515951D1 (de)	2000-05-04	Speicherkarte
DE69705118D1 (de)	2001-07-12	Speichervorrichtungsfolgeschaltung
DE69720158D1 (de)	2003-04-30	Speicherschaltungen mit eingebautem Selbsttest
DE69832348D1 (de)	2005-12-22	Speicherschaltung
DE69517072D1 (de)	2000-06-29	Halbleiter-Speichereinrichtung-Prüfschaltung mit Datenverschlüsslungfunktion
DE69818325D1 (de)	2003-10-30	Statische Halbleiterspeicheranordnung mit Zeitgeberschaltung
DE69528009D1 (de)	2002-10-10	Elektronisches Gerät mit funktionellem Informationspeicher
DE69627724D1 (de)	2003-05-28	Ferroelektrischer Speicher mit Rücksetzschaltung
DE69718896D1 (de)	2003-03-13	Halbleiterspeicheranordnung mit Redundanz
DE69823074D1 (de)	2004-05-19	Speicherschaltung mit variabler Latenz
DE69513892D1 (de)	2000-01-20	Speicherkarte
DE69828021D1 (de)	2005-01-13	Halbleiterspeicheranordnung mit mehreren Banken
DE69920306D1 (de)	2004-10-28	Ferroelektrische Speicheranordnung

Legal Events

Date	Code	Title	Description
2005-10-06	8364	No opposition during term of opposition
2007-10-18	8339	Ceased/non-payment of the annual fee