[go: up one dir, main page]

DE69633378D1 - Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung - Google Patents

Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung

Info

Publication number
DE69633378D1
DE69633378D1 DE69633378T DE69633378T DE69633378D1 DE 69633378 D1 DE69633378 D1 DE 69633378D1 DE 69633378 T DE69633378 T DE 69633378T DE 69633378 T DE69633378 T DE 69633378T DE 69633378 D1 DE69633378 D1 DE 69633378D1
Authority
DE
Germany
Prior art keywords
manufacturing
liquid crystal
display device
crystal display
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633378T
Other languages
English (en)
Other versions
DE69633378T2 (de
Inventor
Young-Chan Kweon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=26631545&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69633378(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69633378D1 publication Critical patent/DE69633378D1/de
Publication of DE69633378T2 publication Critical patent/DE69633378T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69633378T 1995-12-28 1996-12-10 Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung Expired - Lifetime DE69633378T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR9562170 1995-12-28
KR19950062170 1995-12-28
KR9618516 1996-05-29
KR1019960018516A KR100190041B1 (ko) 1995-12-28 1996-05-29 액정표시장치의 제조방법

Publications (2)

Publication Number Publication Date
DE69633378D1 true DE69633378D1 (de) 2004-10-21
DE69633378T2 DE69633378T2 (de) 2005-09-22

Family

ID=26631545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633378T Expired - Lifetime DE69633378T2 (de) 1995-12-28 1996-12-10 Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung

Country Status (6)

Country Link
US (2) US5811318A (de)
EP (2) EP1380880A1 (de)
JP (3) JP3830593B2 (de)
KR (1) KR100190041B1 (de)
DE (1) DE69633378T2 (de)
TW (1) TW387998B (de)

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
DE69635239T2 (de) * 1995-11-21 2006-07-06 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung einer Flüssigkristall-Anzeige
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
TW418432B (en) * 1996-12-18 2001-01-11 Nippon Electric Co Manufacturing method of thin film transistor array
US6949417B1 (en) * 1997-03-05 2005-09-27 Lg. Philips Lcd Co., Ltd. Liquid crystal display and method of manufacturing the same
JP3883641B2 (ja) * 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
KR100244447B1 (ko) * 1997-04-03 2000-02-01 구본준 액정 표시 장치 및 그 액정 표시 장치의 제조 방법
US6011605A (en) * 1997-08-04 2000-01-04 Matsushita Electric Industrial Co., Ltd. Liquid crystal display with a metallic reflecting electrode having a two layer film of Ti and Al alloy
JPH11101986A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 表示装置及び表示装置用大基板
JPH11233784A (ja) * 1998-02-17 1999-08-27 Matsushita Electron Corp 薄膜トランジスタの製造方法
KR100276442B1 (ko) * 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
KR100528883B1 (ko) * 1998-06-13 2006-02-28 엘지.필립스 엘시디 주식회사 액정표시장치의 제조방법
JP4363684B2 (ja) * 1998-09-02 2009-11-11 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタ基板およびこれを用いた液晶表示装置
JP2000081638A (ja) * 1998-09-04 2000-03-21 Matsushita Electric Ind Co Ltd 液晶表示装置およびその製造方法
KR100595416B1 (ko) * 1998-09-11 2006-09-18 엘지.필립스 엘시디 주식회사 회절노광을 이용한 액정 표시 장치 제조 방법
US6493048B1 (en) 1998-10-21 2002-12-10 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
KR100556345B1 (ko) * 1998-11-24 2006-04-21 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시소자의 제조방법
US6395586B1 (en) * 1999-02-03 2002-05-28 Industrial Technology Research Institute Method for fabricating high aperture ratio TFT's and devices formed
US6448579B1 (en) 2000-12-06 2002-09-10 L.G.Philips Lcd Co., Ltd. Thin film transistor array substrate for liquid crystal display and a method for fabricating the same
KR100623982B1 (ko) * 1999-07-16 2006-09-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
US6140701A (en) * 1999-08-31 2000-10-31 Micron Technology, Inc. Suppression of hillock formation in thin aluminum films
KR100498630B1 (ko) * 1999-09-01 2005-07-01 엘지.필립스 엘시디 주식회사 액정표시장치
KR100342860B1 (ko) * 1999-09-08 2002-07-02 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
KR100635943B1 (ko) * 1999-11-04 2006-10-18 삼성전자주식회사 박막 트랜지스터 기판 및 그의 제조 방법
KR100601177B1 (ko) * 2000-02-10 2006-07-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그의 제조 방법
KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
US6838696B2 (en) * 2000-03-15 2005-01-04 Advanced Display Inc. Liquid crystal display
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
US6900084B1 (en) 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
TWI253538B (en) * 2000-09-30 2006-04-21 Au Optronics Corp Thin film transistor flat display and its manufacturing method
KR100806808B1 (ko) * 2000-10-17 2008-02-22 엘지.필립스 엘시디 주식회사 등저항 배선을 위한 액정표시장치
KR100729763B1 (ko) * 2000-12-04 2007-06-20 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법
US7071037B2 (en) 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100799465B1 (ko) * 2001-03-26 2008-02-01 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR100473225B1 (ko) * 2001-12-31 2005-03-08 엘지.필립스 엘시디 주식회사 알루미늄 금속층과 투명도전성 금속층의 접촉구조와 그를 위한 제조방법
KR100869112B1 (ko) 2002-01-14 2008-11-17 삼성전자주식회사 반사형 액정표시장치 및 그 제조 방법
TWI241430B (en) * 2002-03-01 2005-10-11 Prime View Int Corp Ltd Method for forming a bonding pad in a TFT array process for a reflective LCD and bonding pad formed by the same
KR100436181B1 (ko) * 2002-04-16 2004-06-12 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판 제조방법
KR100497297B1 (ko) * 2002-04-18 2005-06-23 엘지.필립스 엘시디 주식회사 액정표시소자 및 그 제조방법
TW538541B (en) * 2002-05-15 2003-06-21 Au Optronics Corp Active matrix substrate of liquid crystal display device and the manufacturing method thereof
JP3730958B2 (ja) 2002-12-25 2006-01-05 鹿児島日本電気株式会社 積層膜のパターン形成方法及び積層配線電極
KR20040061195A (ko) * 2002-12-30 2004-07-07 엘지.필립스 엘시디 주식회사 액정표시패널 및 그 제조방법
TWI234124B (en) * 2003-06-30 2005-06-11 Ritdisplay Corp Display panel, electrode panel and electrode substrate thereof
KR101006438B1 (ko) * 2003-11-12 2011-01-06 삼성전자주식회사 액정 표시 장치
TWI252587B (en) * 2004-12-14 2006-04-01 Quanta Display Inc Method for manufacturing a pixel electrode contact of a thin-film transistors liquid crystal display
JP2006209089A (ja) * 2004-12-27 2006-08-10 Toshiba Matsushita Display Technology Co Ltd 表示装置
CN1313876C (zh) * 2005-01-19 2007-05-02 广辉电子股份有限公司 薄膜晶体管液晶显示器的像素结构的制造方法
US7049163B1 (en) * 2005-03-16 2006-05-23 Chunghwa Picture Tubes, Ltd. Manufacture method of pixel structure
KR20060125066A (ko) * 2005-06-01 2006-12-06 삼성전자주식회사 개구율이 향상된 어레이 기판 및 이의 제조방법
KR20070001647A (ko) * 2005-06-29 2007-01-04 엘지.필립스 엘시디 주식회사 반사투과형 액정 표시 장치 및 그 제조 방법
CN100367488C (zh) * 2006-02-13 2008-02-06 友达光电股份有限公司 薄膜晶体管阵列基板的制造方法
JP5262161B2 (ja) * 2008-02-14 2013-08-14 カシオ計算機株式会社 半導体集積回路装置
EP2172977A1 (de) 2008-10-03 2010-04-07 Semiconductor Energy Laboratory Co., Ltd. Anzeigevorrichtung
KR101280827B1 (ko) * 2009-11-20 2013-07-02 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
KR101750431B1 (ko) * 2010-11-10 2017-06-26 삼성디스플레이 주식회사 박막 트랜지스터 표시판
KR101774484B1 (ko) 2011-02-15 2017-09-05 삼성디스플레이 주식회사 인듐 산화막의 비할로겐성 식각액 및 이를 이용한 표시 기판의 제조 방법
JP2012204548A (ja) * 2011-03-24 2012-10-22 Sony Corp 表示装置およびその製造方法
KR20130027188A (ko) * 2011-09-07 2013-03-15 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR102086422B1 (ko) 2013-03-28 2020-03-10 삼성디스플레이 주식회사 표시패널 및 이의 제조방법
KR102400212B1 (ko) 2014-03-28 2022-05-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터 및 반도체 장치
CN107369614A (zh) * 2017-08-07 2017-11-21 深圳市华星光电技术有限公司 金属膜镀制方法、薄膜晶体管和阵列基板的制作方法

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4545112A (en) 1983-08-15 1985-10-08 Alphasil Incorporated Method of manufacturing thin film transistors and transistors made thereby
US4651185A (en) 1983-08-15 1987-03-17 Alphasil, Inc. Method of manufacturing thin film transistors and transistors made thereby
JPH0816756B2 (ja) * 1988-08-10 1996-02-21 シャープ株式会社 透過型アクティブマトリクス液晶表示装置
US5187604A (en) * 1989-01-18 1993-02-16 Hitachi, Ltd. Multi-layer external terminals of liquid crystal displays with thin-film transistors
JPH0828517B2 (ja) * 1989-07-04 1996-03-21 シャープ株式会社 薄膜トランジスタアレイ
JP2846351B2 (ja) * 1989-07-27 1999-01-13 株式会社日立製作所 液晶表示装置
JP3009438B2 (ja) * 1989-08-14 2000-02-14 株式会社日立製作所 液晶表示装置
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
JP2940689B2 (ja) 1990-03-23 1999-08-25 三洋電機株式会社 アクティブマトリクス型表示装置の薄膜トランジスタアレイ及びその製造方法
JPH0465168A (ja) * 1990-07-05 1992-03-02 Hitachi Ltd 薄膜トランジスタ
US5334859A (en) * 1991-09-05 1994-08-02 Casio Computer Co., Ltd. Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film
DE69223118T2 (de) * 1991-11-26 1998-03-05 Casio Computer Co Ltd Dünnschicht-Transistor-Panel und dessen Herstellungsmethode
JPH05152573A (ja) * 1991-11-29 1993-06-18 Nec Corp 薄膜トランジスタ及びその製造方法
JPH05267670A (ja) 1992-03-23 1993-10-15 Matsushita Electron Corp 薄膜トランジスタおよびその製造方法
JPH05292434A (ja) 1992-04-13 1993-11-05 Fujitsu General Ltd 液晶表示装置の交流駆動方法
JPH05341315A (ja) 1992-06-08 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
KR950008931B1 (ko) * 1992-07-22 1995-08-09 삼성전자주식회사 표시패널의 제조방법
JPH06138487A (ja) 1992-10-29 1994-05-20 Hitachi Ltd 半導体装置と液晶表示装置
JPH06188419A (ja) * 1992-12-16 1994-07-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP3098345B2 (ja) * 1992-12-28 2000-10-16 富士通株式会社 薄膜トランジスタマトリクス装置及びその製造方法
JP3116149B2 (ja) * 1993-01-18 2000-12-11 株式会社日立製作所 配線材料および液晶表示装置
JPH06230428A (ja) 1993-02-08 1994-08-19 Hitachi Ltd 液晶表示装置およびその製造方法
JPH06250211A (ja) * 1993-02-23 1994-09-09 Hitachi Ltd 液晶表示基板とその製造方法
US5821622A (en) 1993-03-12 1998-10-13 Kabushiki Kaisha Toshiba Liquid crystal display device
JPH06337437A (ja) 1993-05-28 1994-12-06 Sanyo Electric Co Ltd 液晶表示装置
JP3281167B2 (ja) * 1994-03-17 2002-05-13 富士通株式会社 薄膜トランジスタの製造方法
TW321731B (de) * 1994-07-27 1997-12-01 Hitachi Ltd
US5550066A (en) 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
US5693567A (en) 1995-06-07 1997-12-02 Xerox Corporation Separately etching insulating layer for contacts within array and for peripheral pads
JP3409542B2 (ja) 1995-11-21 2003-05-26 ソニー株式会社 半導体装置の製造方法
DE69635239T2 (de) * 1995-11-21 2006-07-06 Samsung Electronics Co., Ltd., Suwon Verfahren zur Herstellung einer Flüssigkristall-Anzeige
KR0161462B1 (ko) 1995-11-23 1999-01-15 김광호 액정 디스플레이에서의 게이트 패드 형성방법
KR100190041B1 (ko) * 1995-12-28 1999-06-01 윤종용 액정표시장치의 제조방법
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6081308A (en) * 1996-11-21 2000-06-27 Samsung Electronics Co., Ltd. Method for manufacturing liquid crystal display
KR100244449B1 (ko) * 1997-02-11 2000-02-01 구본준 박막 트랜지스터 검사용 단락 배선을 갖는 액정 표시 장치와 그 제조 방법(liquid crystal display having shorting bar for testing tft and method for manufacturing the same)
US5990986A (en) 1997-05-30 1999-11-23 Samsung Electronics Co., Ltd. Thin film transistor substrate for a liquid crystal display having buffer layers and a manufacturing method thereof
KR100276442B1 (ko) * 1998-02-20 2000-12-15 구본준 액정표시장치 제조방법 및 그 제조방법에 의한 액정표시장치
KR100333273B1 (ko) * 1999-08-02 2002-04-24 구본준, 론 위라하디락사 박막트랜지스터형 액정표시장치의 어레이기판과 그 제조방법
KR100673331B1 (ko) * 2000-02-19 2007-01-23 엘지.필립스 엘시디 주식회사 액정 표시장치 제조방법 및 그 제조방법에 따른액정표시장치
KR100372579B1 (ko) * 2000-06-21 2003-02-17 엘지.필립스 엘시디 주식회사 액정표시장치용 어레이기판과 그 제조방법
US6620655B2 (en) * 2000-11-01 2003-09-16 Lg.Phillips Lcd Co., Ltd. Array substrate for transflective LCD device and method of fabricating the same

Also Published As

Publication number Publication date
JP3830593B2 (ja) 2006-10-04
USRE39211E1 (en) 2006-08-01
EP1380880A1 (de) 2004-01-14
KR970048855A (ko) 1997-07-29
JP3891988B2 (ja) 2007-03-14
JP3976770B2 (ja) 2007-09-19
TW387998B (en) 2000-04-21
JP2004157555A (ja) 2004-06-03
EP0782040A3 (de) 1998-07-15
JP2006091918A (ja) 2006-04-06
KR100190041B1 (ko) 1999-06-01
EP0782040B1 (de) 2004-09-15
EP0782040A2 (de) 1997-07-02
DE69633378T2 (de) 2005-09-22
US5811318A (en) 1998-09-22
JPH09189924A (ja) 1997-07-22

Similar Documents

Publication Publication Date Title
DE69633378D1 (de) Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung
DE69430781D1 (de) Verfahren zur Herstellung einer Flüssigkristall-Anzeigevorrichtung
DE69433928D1 (de) Verfahren zur Herstellung einer Flüssigkristallanzeigevorrichtung
DE69625052D1 (de) Verfahren zur herstellung einer flüssigkristall-anzeige
DE69635239D1 (de) Verfahren zur Herstellung einer Flüssigkristall-Anzeige
DE69315454D1 (de) Verfahren zur Herstellung einer Flüssigkristalltafel
DE69428528D1 (de) Flüssigkristall-anzeigevorrichtung und verfahren zur herstellung einer anzahl von flüssigkristall-anzeigevorrichtungen
DE69504569D1 (de) Verfahren zur Herstellung eines Farbfilters und einer Flüssigkristallanzeigevorrichtung
DE69327082D1 (de) Verfahren zur Herstellung einer Flüssigkristalltafel
DE69218092D1 (de) Elektrodenstruktur einer Flüssigkristall-Anzeigevorrichtung und Verfahren zur Herstellung der Flüssigkristall-Anzeigevorrichtung
DE69709439D1 (de) Herstellungsverfahren einer Flüssigkristallanzeigevorrichtung
DE69433785D1 (de) Flüssigkristallanzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69331610D1 (de) Verfahren zur Ansteuerung einer Flüssigkristallanzeige
DE68915602D1 (de) Verfahren zur Herstellung einer optischen Flüssigkristall-Vorrichtung.
DE69429388D1 (de) Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69132385D1 (de) Verfahren zur Herstellung einer flachen Anzeigevorrichtung
DE69821682D1 (de) Flüssigkristallanzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69427668D1 (de) Verfahren zur Herstellung einer Flüssigkristall-Anzeigevorrichtung mit Orientierungsschicht für willkürliche Ausrichtung
DE69529504D1 (de) Flüssigkristallvorrichtung und Verfahren zur Herstellung einer Flüssigkristallvorrichtung
DE69622607D1 (de) Flüssigkristall-Anzeige und Verfahren zu ihrer Herstellung
DE59107368D1 (de) Verfahren zur Herstellung einer schockstabilen Flüssigkristall-Schalt- und -Anzeigevorrichtung
DE69320076D1 (de) Verfahren zur Ansteuerung einer Flüssigkristall- Anzeigevorrichtung
DE69429394D1 (de) Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69820514D1 (de) Reflektive Flüssigkristall-Anzeigevorrichtung und Verfahren zu ihrer Herstellung
DE69815560D1 (de) Reflektive Flüssigkristallanzeigevorrichtung und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition