[go: up one dir, main page]

DE69535775D1 - Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen - Google Patents

Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen

Info

Publication number
DE69535775D1
DE69535775D1 DE69535775T DE69535775T DE69535775D1 DE 69535775 D1 DE69535775 D1 DE 69535775D1 DE 69535775 T DE69535775 T DE 69535775T DE 69535775 T DE69535775 T DE 69535775T DE 69535775 D1 DE69535775 D1 DE 69535775D1
Authority
DE
Germany
Prior art keywords
semiconductor
arrangement
elements
semiconductor elements
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69535775T
Other languages
English (en)
Inventor
Kazuji Yamada
Akira Tanaka
Ryuichi Saito
Yasutoshi Kurihara
Tadao Kushima
Takashi Haramaki
Yoshihiko Koike
Takashi Hosokawa
Mamoru Sawahata
Masahiro Koizumi
Jin Onuki
Kazuhiro Suzuki
Isao Kobayashi
Hideo Shimizu
Yutaka Higashimura
Shigeki Sekine
Nobuya Koike
Hideya Kokubun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Minebea Power Semiconductor Device Inc
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06243654A external-priority patent/JP3129113B2/ja
Priority claimed from JP32664094A external-priority patent/JP3250399B2/ja
Priority claimed from JP6326633A external-priority patent/JPH08186193A/ja
Priority claimed from JP00281895A external-priority patent/JP3222341B2/ja
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69535775D1 publication Critical patent/DE69535775D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4801—Structure
    • H01L2224/48011—Length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)
DE69535775T 1994-10-07 1995-10-04 Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen Expired - Lifetime DE69535775D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP06243654A JP3129113B2 (ja) 1994-10-07 1994-10-07 半導体電流制御装置
JP32664094A JP3250399B2 (ja) 1994-12-28 1994-12-28 回路基板及び半導体装置
JP6326633A JPH08186193A (ja) 1994-12-28 1994-12-28 回路基板及びそれを用いた半導体装置
JP00281895A JP3222341B2 (ja) 1995-01-11 1995-01-11 半導体モジュール

Publications (1)

Publication Number Publication Date
DE69535775D1 true DE69535775D1 (de) 2008-08-07

Family

ID=27453718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69535775T Expired - Lifetime DE69535775D1 (de) 1994-10-07 1995-10-04 Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen

Country Status (4)

Country Link
US (4) US5956231A (de)
EP (1) EP0706221B8 (de)
KR (1) KR100359051B1 (de)
DE (1) DE69535775D1 (de)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6002183A (en) * 1995-05-04 1999-12-14 Iversen; Arthur H. Power semiconductor packaging
EP0706221B8 (de) * 1994-10-07 2008-09-03 Hitachi, Ltd. Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen
EP0828341B1 (de) * 1996-09-06 2003-12-03 Hitachi, Ltd. Leistungshalbleiteranordnung in modularer Bauart
JP3533317B2 (ja) * 1997-08-28 2004-05-31 株式会社東芝 圧接型半導体装置
CN1146988C (zh) * 1997-12-08 2004-04-21 东芝株式会社 半导体功率器件的封装及其组装方法
EP0924845A3 (de) * 1997-12-22 2001-05-23 Omnirel LLC Leistungshalbleitermodul
JP2000082774A (ja) * 1998-06-30 2000-03-21 Sumitomo Electric Ind Ltd パワ―モジュ―ル用基板およびその基板を用いたパワ―モジュ―ル
JP2000183249A (ja) * 1998-12-11 2000-06-30 Mitsubishi Electric Corp パワー半導体モジュール
JP4220094B2 (ja) * 1999-04-05 2009-02-04 三菱電機株式会社 パワー半導体モジュール
JP3695260B2 (ja) * 1999-11-04 2005-09-14 株式会社日立製作所 半導体モジュール
JP2001310720A (ja) * 2000-04-28 2001-11-06 Denso Corp 負荷駆動回路
US6552429B2 (en) * 2000-08-28 2003-04-22 Mitsubishi Denki Kabushiki Kaisha Power switching semiconductor device with suppressed oscillation
US7012810B2 (en) * 2000-09-20 2006-03-14 Ballard Power Systems Corporation Leadframe-based module DC bus design to reduce module inductance
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
CN1305211C (zh) * 2000-11-03 2007-03-14 Smc电气产品公司 微型驱动器
US20040174954A1 (en) * 2001-06-28 2004-09-09 Rust Johan Willem Medical x-ray device and power module therefor
DE10237561C1 (de) * 2002-08-16 2003-10-16 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung bzw. Schaltungsaufbau für Leistungshalbleitermodule
JP4057407B2 (ja) * 2002-12-12 2008-03-05 三菱電機株式会社 半導体パワーモジュール
EP1465250A1 (de) * 2003-04-02 2004-10-06 Abb Research Ltd. Isolierter Leistungshalbleitermodul mit verringerter Teilentladung und Verfahren zu seiner Herstellung
US7443692B2 (en) * 2003-05-16 2008-10-28 Continental Automotive Systems Us, Inc. Power converter architecture employing at least one capacitor across a DC bus
US6906404B2 (en) * 2003-05-16 2005-06-14 Ballard Power Systems Corporation Power module with voltage overshoot limiting
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
US7154196B2 (en) * 2003-07-09 2006-12-26 Motorola, Inc. Printed circuit board for a three-phase power device having embedded directional impedance control channels
JP2005094842A (ja) * 2003-09-12 2005-04-07 Toshiba Corp インバータ装置及びその製造方法
JP4081611B2 (ja) * 2003-11-19 2008-04-30 株式会社豊田自動織機 半導体装置
US20050128706A1 (en) * 2003-12-16 2005-06-16 Ballard Power Systems Corporation Power module with heat exchange
US7301755B2 (en) * 2003-12-17 2007-11-27 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
JP4575034B2 (ja) * 2004-06-03 2010-11-04 株式会社東芝 インバータ装置
US7295448B2 (en) * 2004-06-04 2007-11-13 Siemens Vdo Automotive Corporation Interleaved power converter
US7289329B2 (en) * 2004-06-04 2007-10-30 Siemens Vdo Automotive Corporation Integration of planar transformer and/or planar inductor with power switches in power converter
JP4271112B2 (ja) * 2004-09-21 2009-06-03 株式会社東芝 半導体装置
US7180763B2 (en) * 2004-09-21 2007-02-20 Ballard Power Systems Corporation Power converter
JP4453498B2 (ja) * 2004-09-22 2010-04-21 富士電機システムズ株式会社 パワー半導体モジュールおよびその製造方法
DE102004046806B4 (de) * 2004-09-27 2009-07-09 Infineon Technologies Ag Leistungshalbleitermodul
WO2006044934A2 (en) * 2004-10-20 2006-04-27 Ballard Power Systems Corporation Power system method and apparatus
DE102004061908B4 (de) * 2004-12-22 2009-07-30 Siemens Ag Verfahren zum Herstellen einer Schaltungsanordnung auf einem Substrat
DE102005063532B3 (de) 2005-02-17 2022-03-10 Infineon Technologies Ag Leistungshalbleiterbaugruppe
DE102005007373B4 (de) 2005-02-17 2013-05-29 Infineon Technologies Ag Leistungshalbleiterbaugruppe
JP2006253516A (ja) * 2005-03-14 2006-09-21 Hitachi Ltd パワー半導体装置
EP1897214A2 (de) * 2005-06-30 2008-03-12 Siemens VDO Automotive Corporation Für einen elektrischen antrieb geeignete(s) steuerverfahren, -vorrichtung und -steuerartikel
GB2433354A (en) * 2005-12-14 2007-06-20 Goodrich Control Sys Ltd Electrical contact arrangement
JP4470879B2 (ja) * 2005-12-26 2010-06-02 株式会社デンソー 車両用発電機の発電制御装置
DE102006014582B4 (de) 2006-03-29 2011-09-15 Infineon Technologies Ag Halbleitermodul
US8198712B2 (en) * 2006-06-07 2012-06-12 International Rectifier Corporation Hermetically sealed semiconductor device module
EP2028692A4 (de) * 2006-06-09 2009-12-23 Honda Motor Co Ltd Halbleiterbauelement
JP4829690B2 (ja) * 2006-06-09 2011-12-07 本田技研工業株式会社 半導体装置
US7593235B2 (en) * 2006-07-20 2009-09-22 Power Integrations, Inc. Thermal conduit
US20090115052A1 (en) * 2007-05-25 2009-05-07 Astralux, Inc. Hybrid silicon/non-silicon electronic device with heat spreader
JP4567029B2 (ja) * 2007-06-22 2010-10-20 日立オートモティブシステムズ株式会社 電力変換装置
US20090052134A1 (en) * 2007-08-22 2009-02-26 Casteel Jordan B Liquid-cooled grounded heatsink for diode rectifier system
US7773381B2 (en) 2007-09-26 2010-08-10 Rohm Co., Ltd. Semiconductor device
USD587662S1 (en) * 2007-12-20 2009-03-03 Fuji Electric Device Technology Co., Ltd. Semiconductor device
JP2009239261A (ja) * 2008-03-07 2009-10-15 Panasonic Corp 電子ユニット、電子装置
USD589012S1 (en) * 2008-03-17 2009-03-24 Fuji Electric Device Technology Co., Ltd. Semiconductor device
US8564118B2 (en) 2008-06-06 2013-10-22 Mitsubishi Materials Corporation Power module substrate, power module, and method for manufacturing power module substrate
JP4666185B2 (ja) * 2008-06-26 2011-04-06 三菱電機株式会社 半導体装置
US8411451B2 (en) 2008-07-30 2013-04-02 Panasonic Corporation Power line communication apparatus
JP5002568B2 (ja) * 2008-10-29 2012-08-15 日立オートモティブシステムズ株式会社 電力変換装置
USD606951S1 (en) * 2008-11-14 2009-12-29 Fuji Electric Device Technology Co, Ltd. Semiconductor device
US7898807B2 (en) * 2009-03-09 2011-03-01 General Electric Company Methods for making millichannel substrate, and cooling device and apparatus using the substrate
DE102009035819A1 (de) * 2009-08-01 2011-02-03 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stromsymmetrischem Lastanschlusselement
KR20120073302A (ko) * 2009-09-28 2012-07-04 에이비비 테크놀로지 아게 회로 장치 및 그의 제조 방법
TW201127232A (en) * 2009-11-18 2011-08-01 Molex Inc Circuit board with air hole
TWI377465B (en) * 2010-03-11 2012-11-21 Delta Electronics Inc Heat dissipating module and electronic device using such heat dissipating module
JP5212417B2 (ja) 2010-04-12 2013-06-19 三菱電機株式会社 パワー半導体モジュール
US8482904B2 (en) * 2010-05-25 2013-07-09 Lear Corporation Power module with current sensing
JP5380376B2 (ja) 2010-06-21 2014-01-08 日立オートモティブシステムズ株式会社 パワー半導体装置
US8878483B2 (en) 2011-01-14 2014-11-04 Lear Corporation Electronics unit with current sensing
JP5555206B2 (ja) * 2011-07-11 2014-07-23 株式会社 日立パワーデバイス 半導体パワーモジュール
JP5338932B2 (ja) * 2011-07-26 2013-11-13 株式会社デンソー 電力変換装置
KR101301387B1 (ko) * 2011-09-16 2013-08-28 삼성전기주식회사 전력 반도체 모듈
JP2013069746A (ja) * 2011-09-21 2013-04-18 Toshiba Corp 半導体装置および電極端子
CN102364676B (zh) * 2011-11-30 2013-10-30 江苏宏微科技有限公司 半导体功率模块封装外壳结构
EP2793258A4 (de) * 2011-12-12 2015-11-11 Mitsubishi Materials Corp Strommodulsubstrat, substrat für ein strommodul mit kühlkörper, strommodul, paste zur herstellung einer flusskomponenteneindringungsverhinderungsschicht sowie bindungsverfahren für einen zu bindenden artikel
JP5705099B2 (ja) 2011-12-16 2015-04-22 三菱電機株式会社 半導体スイッチング装置
CN106421792A (zh) 2012-02-06 2017-02-22 创新医学概念有限责任公司 包含抗病毒成分和cox‑2抑制剂成分组合的药物组合物及用于药物组合疗法的药盒
WO2013118415A1 (ja) * 2012-02-09 2013-08-15 富士電機株式会社 半導体装置
DE102012211952B4 (de) * 2012-07-09 2019-04-25 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit mindestens einem stressreduzierenden Anpasselement
CN104584213B (zh) * 2012-08-24 2018-02-13 三菱电机株式会社 半导体装置
JP6057734B2 (ja) * 2013-01-18 2017-01-11 三菱電機株式会社 電力変換装置
JP6102297B2 (ja) * 2013-02-06 2017-03-29 富士電機株式会社 半導体装置
JP5975177B2 (ja) 2013-07-16 2016-08-23 三菱電機株式会社 半導体装置
CN104347554A (zh) * 2013-07-23 2015-02-11 西安永电电气有限责任公司 电力半导体器件用电极
WO2016006065A1 (ja) * 2014-07-09 2016-01-14 三菱電機株式会社 半導体装置
DE102014116662B4 (de) * 2014-11-14 2018-03-08 Infineon Technologies Ag Elektrische anschlussbaugruppe, halbleitermodul und verfahren zurherstellung eines halbleitermoduls
WO2016084622A1 (ja) * 2014-11-28 2016-06-02 富士電機株式会社 半導体装置
JP2016116328A (ja) * 2014-12-15 2016-06-23 富士電機株式会社 電力変換装置の冷却装置
JP6881304B2 (ja) * 2015-07-08 2021-06-02 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
JP6613806B2 (ja) * 2015-10-23 2019-12-04 富士電機株式会社 半導体装置
KR102059610B1 (ko) * 2015-12-18 2019-12-26 주식회사 엘지화학 고전도성 방열 패드를 이용한 인쇄회로기판의 방열 시스템
CN105789192B (zh) * 2016-05-03 2018-11-30 扬州国扬电子有限公司 一种设有电极大臂的功率模块
CN105810658B (zh) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 一种电极叠层引出的三电平功率模块
CN105810653B (zh) * 2016-05-03 2018-09-28 扬州国扬电子有限公司 一种设有可共用电极大臂的功率模块
CN105789160B (zh) * 2016-05-03 2017-05-24 扬州国扬电子有限公司 一种组合式电极及其三电平大功率模块
JP6515886B2 (ja) 2016-07-08 2019-05-22 株式会社豊田自動織機 半導体モジュール
JP6935405B2 (ja) * 2016-09-06 2021-09-15 三洋電機株式会社 バスバーの接続方法、プリント基板、及びスイッチ装置
US10021802B2 (en) 2016-09-19 2018-07-10 General Electric Company Electronic module assembly having low loop inductance
DE102016219116A1 (de) * 2016-09-30 2018-04-05 Robert Bosch Gmbh Verfahren zum Herstellen einer elektronischen Baugruppe und elektronische Baugruppe, insbesondere für ein Getriebesteuermodul
EP3562023B1 (de) * 2016-12-22 2023-03-29 Mitsubishi Electric Corporation Stromwandlungsvorrichtung
WO2018207396A1 (ja) * 2017-05-11 2018-11-15 住友電気工業株式会社 半導体装置
JP6717270B2 (ja) * 2017-07-27 2020-07-01 株式会社デンソー 半導体モジュール
DE102017217150A1 (de) * 2017-09-27 2019-03-28 Siemens Aktiengesellschaft Hochspannungsgerät mit keramischen Abstandselementen und dessen Verwendung
US11699666B2 (en) * 2018-06-06 2023-07-11 Mitsubishi Electric Corporation Semiconductor device and power conversion device
WO2019235097A1 (ja) 2018-06-06 2019-12-12 富士電機株式会社 半導体装置
JP2020013908A (ja) 2018-07-18 2020-01-23 住友電工デバイス・イノベーション株式会社 電子部品の実装構造
CN109093649B (zh) * 2018-08-31 2021-04-30 蔡德秀 一种搬运机器人的散热装置
JP7172326B2 (ja) * 2018-09-14 2022-11-16 富士電機株式会社 半導体ユニット、半導体モジュール及び半導体装置
JP7215265B2 (ja) 2019-03-19 2023-01-31 富士電機株式会社 半導体ユニット、半導体モジュール及び半導体装置
PH22021550004U3 (en) 2019-03-25 2023-05-05 Shindengen Electric Mfg Semiconductor apparatus, lead frame, and power source apparatus
JP7170272B2 (ja) * 2019-03-27 2022-11-14 ネクスファイ・テクノロジー株式会社 パワー基板とそれを備えた高電圧モジュール
JP7238565B2 (ja) * 2019-04-12 2023-03-14 富士電機株式会社 半導体装置及び半導体装置の製造方法
WO2021029150A1 (ja) 2019-08-13 2021-02-18 富士電機株式会社 半導体装置
JP7160012B2 (ja) * 2019-10-03 2022-10-25 株式会社デンソー 電子制御装置
KR102727977B1 (ko) * 2019-11-14 2024-11-07 현대자동차주식회사 전력모듈에 적용되는 기판 구조
KR102197814B1 (ko) * 2020-07-31 2021-01-04 도드람양돈협동조합 돈두의 열처리 변색저감을 위한 원료돈의 도축방법
DE102020216506A1 (de) 2020-12-22 2022-06-23 Zf Friedrichshafen Ag Halbbrücke mit einer U- oder V-förmigen Anordnung von Halbleiterschaltelementen für einen elektrischen Antrieb eines Elektrofahrzeugs oder eines Hybridfahrzeugs, Leistungsmodul für einen Inverter und Inverter
CN113271749A (zh) * 2021-04-01 2021-08-17 王启腾 一种复合导热pcb线路板
EP4239660A1 (de) * 2022-03-03 2023-09-06 Hitachi Energy Switzerland AG Verfahren zum befestigen eines anschlusses an einer metallsubstratstruktur für ein halbleiterleistungsmodul und halbleiterleistungsmodul
DE102023211425A1 (de) * 2023-11-16 2025-04-17 Vitesco Technologies GmbH Kontaktierungselement für Leistungshalbleitermodule, Leistungshalbleitermodul und Inverter mit einem Kontaktierungselement

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3144704A (en) * 1962-07-02 1964-08-18 Ibm Method of making couplings to super-conductor circuits
US4278990A (en) * 1979-03-19 1981-07-14 General Electric Company Low thermal resistance, low stress semiconductor package
JPS5931044A (ja) * 1982-08-12 1984-02-18 Mitsubishi Electric Corp 半導体装置
JPS6074655A (ja) * 1983-09-30 1985-04-26 Fuji Electric Co Ltd 半導体装置
US4819042A (en) * 1983-10-31 1989-04-04 Kaufman Lance R Isolated package for multiple semiconductor power components
JPS6148945A (ja) * 1984-08-16 1986-03-10 Toshiba Corp ハイプリツドｉｃモジユ−ル
JPS6254944A (ja) * 1985-09-03 1987-03-10 Mitsubishi Electric Corp 密閉構造形半導体樹脂容器
JPS62160746A (ja) * 1986-01-10 1987-07-16 Fuji Electric Co Ltd 半導体素子
US4907068A (en) * 1987-01-21 1990-03-06 Siemens Aktiengesellschaft Semiconductor arrangement having at least one semiconductor body
JPH0652831B2 (ja) * 1987-09-30 1994-07-06 株式会社日立製作所 自動車用電子回路装置の密封構造
JPH01237333A (ja) * 1987-10-27 1989-09-21 Japan Electron Control Syst Co Ltd 内燃機関の制御装置
US5347426A (en) * 1988-09-13 1994-09-13 Pechiney Recherche Electronic device including a passive electronic component
JPH02189957A (ja) * 1989-01-18 1990-07-25 Mitsubishi Electric Corp 半導体装置
DE3915707A1 (de) * 1989-05-13 1990-11-22 Asea Brown Boveri Kunststoffgehaeuse und leistungshalbleitermodul mit diesem gehaeuse
US5202578A (en) * 1989-09-11 1993-04-13 Kabushiki Kaisha Toshiba Module-type semiconductor device of high power capacity
JPH03177385A (ja) * 1989-12-07 1991-08-01 Kawasaki Steel Corp 高熱伝導性回路基板
DE4017181C2 (de) * 1990-05-29 1998-08-27 Daimler Benz Aerospace Ag Elektrisches Bauelement
JP2504610B2 (ja) * 1990-07-26 1996-06-05 株式会社東芝 電力用半導体装置
GB2249869B (en) * 1990-09-17 1994-10-12 Fuji Electric Co Ltd Semiconductor device
JP2772184B2 (ja) * 1991-11-07 1998-07-02 株式会社東芝 半導体装置
JP2882143B2 (ja) * 1991-12-10 1999-04-12 富士電機株式会社 半導体装置の内部配線構造
JPH05167002A (ja) * 1991-12-19 1993-07-02 Fuji Electric Co Ltd 半導体装置のパッケージ構造
US5170337A (en) * 1992-01-29 1992-12-08 General Electric Company Low-inductance package for multiple paralleled devices operating at high frequency
JP3036236B2 (ja) * 1992-06-16 2000-04-24 三菱マテリアル株式会社 回路基板
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2725954B2 (ja) * 1992-07-21 1998-03-11 三菱電機株式会社 半導体装置およびその製造方法
JP2956363B2 (ja) * 1992-07-24 1999-10-04 富士電機株式会社 パワー半導体装置
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
JP2838625B2 (ja) * 1992-09-08 1998-12-16 株式会社日立製作所 半導体モジュール
US5389743A (en) * 1992-12-21 1995-02-14 Hughes Aircraft Company Rivet design for enhanced copper thick-film I/O pad adhesion
EP0609528A1 (de) * 1993-02-01 1994-08-10 Motorola, Inc. Halbleiterpackung von niedriger Induktanz
US5559374A (en) * 1993-03-25 1996-09-24 Sanyo Electric Co., Ltd. Hybrid integrated circuit
JP2973799B2 (ja) * 1993-04-23 1999-11-08 富士電機株式会社 パワートランジスタモジュール
JPH06334070A (ja) * 1993-05-27 1994-12-02 Sanyo Electric Co Ltd 混成集積回路装置
JP2912526B2 (ja) * 1993-07-05 1999-06-28 三菱電機株式会社 半導体パワーモジュールおよび複合基板
US5444295A (en) * 1993-09-07 1995-08-22 Delco Electronics Corp. Linear dual switch module
EP0661748A1 (de) * 1993-12-28 1995-07-05 Hitachi, Ltd. Halbleitervorrichtung
US5523620A (en) * 1994-02-14 1996-06-04 Delco Electronics Corporation Coplanar linear dual switch module
JP2988243B2 (ja) * 1994-03-16 1999-12-13 株式会社日立製作所 パワー混成集積回路装置
EP0706221B8 (de) * 1994-10-07 2008-09-03 Hitachi, Ltd. Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen
JP2630293B2 (ja) * 1995-02-28 1997-07-16 日本電気株式会社 多層配線基板

Also Published As

Publication number Publication date
KR960015945A (ko) 1996-05-22
US6434008B1 (en) 2002-08-13
US20040056349A1 (en) 2004-03-25
EP0706221A2 (de) 1996-04-10
US5956231A (en) 1999-09-21
US20030016502A1 (en) 2003-01-23
EP0706221A3 (de) 1997-11-05
KR100359051B1 (ko) 2003-02-05
EP0706221B8 (de) 2008-09-03
US7141741B2 (en) 2006-11-28
EP0706221B1 (de) 2008-06-25

Similar Documents

Publication Publication Date Title
DE69535775D1 (de) Halbleiteranordnung mit einer Mehrzahl von Halbleiterelementen
DE69431265D1 (de) Zusammenbaustruktur einer Flachtyp-Anordnung
DE69322180D1 (de) Halbleiteranordnung mit einer Leiterschicht
DE69318239D1 (de) Halbleiterbauelement mit planarer Grenzfläche
DE69528176D1 (de) Trocar mit einer mehrzahl von zugängen
DE69400697D1 (de) Anordnung von modularen Steckern mit einer Mehrzahl von Öffnungen
DE69327455D1 (de) Elektroden-anordnung in form einer verformbaren schleife
DE69525696D1 (de) Wiedergeben von Knotenverbindungsstruktur mit einer Zone von grösseren Abständen und peripheren Zweigen
DE69332847D1 (de) BiCDMOS-Herstellungstechnologie
DE69129619D1 (de) Halbleitervorrichtung mit einer vielzahl von anschlussstiften
DE3787163D1 (de) Halbleiterspeicher mit einer Speicherstruktur mit vielfachen Pegeln.
DE69306051D1 (de) Halbleiterwandler
DE69737621D1 (de) Halbleiterelement mit einer Höckerelektrode
DE69402210D1 (de) Randverbinden einer leiterplatte
DE69429467D1 (de) Halbleiteranordnung mit einer Isolationszone
DE69304632D1 (de) Parallel-Seriell-Umsetzer
FI873829L (fi) Sähköluminoiva elementti
DE69428378D1 (de) Halbleiteranordnung mit einer Durchgangsleitung
DE69412327D1 (de) Monolithisches Diodengitter
DE69422462D1 (de) Aluminoxanen mit einer erhöhten katalytischen Aktivität
DE68926633D1 (de) AD-Wandleranordnung
DE69733388D1 (de) Halbleiteranordnung mit einer Schaltung zur Verhinderung von Latch-up
DE69624305D1 (de) Halbleiteranordnung mit einem ligbt element
DE69829096D1 (de) Rahmenstruktur mit einer Mehrzahl von Modulationsarten
DE69403739D1 (de) Spannung-Strom-Umsetzter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition