DE69132533D1 - Halbleiterspeichergerät mit redundanter Schaltung - Google Patents

Halbleiterspeichergerät mit redundanter Schaltung

Info

Publication number: DE69132533D1
Authority: DE; Germany
Prior art keywords: row; memory cells; storage device; semiconductor storage; redundant circuit
Prior art date: 1990-11-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69132533T

Other languages

English (en)

Other versions

DE69132533T2 (de

Inventor

Yasuo Kobayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Electronics Corp

Original Assignee

NEC Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-11-16

Filing date

1991-11-14

Publication date

2001-03-22

1991-11-14 Application filed by NEC Corp filed Critical NEC Corp

2001-03-22 Application granted granted Critical

2001-03-22 Publication of DE69132533D1 publication Critical patent/DE69132533D1/de

2001-08-09 Publication of DE69132533T2 publication Critical patent/DE69132533T2/de

2011-11-15 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/83—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption
- G11C29/832—Masking faults in memories by using spares or by reconfiguring using programmable devices with reduced power consumption with disconnection of faulty elements

Landscapes

For Increasing The Reliability Of Semiconductor Memories (AREA)
Static Random-Access Memory (AREA)
Dram (AREA)
Semiconductor Memories (AREA)

DE69132533T 1990-11-16 1991-11-14 Halbleiterspeichergerät mit redundanter Schaltung Expired - Fee Related DE69132533T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP2312044A JP2782948B2 (ja)	1990-11-16	1990-11-16	半導体メモリ

Publications (2)

Publication Number	Publication Date
DE69132533D1 true DE69132533D1 (de)	2001-03-22
DE69132533T2 DE69132533T2 (de)	2001-08-09

Family

ID=18024543

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69132533T Expired - Fee Related DE69132533T2 (de)	1990-11-16	1991-11-14	Halbleiterspeichergerät mit redundanter Schaltung

Country Status (5)

Country	Link
US (1)	US5295114A (de)
EP (1)	EP0486295B1 (de)
JP (1)	JP2782948B2 (de)
KR (1)	KR960005367B1 (de)
DE (1)	DE69132533T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP0567707A1 (de) *	1992-04-30	1993-11-03	International Business Machines Corporation	Implementierung von Spaltenredundanz in einer Cachespeicherarchitektur
JP3533227B2 (ja) *	1992-09-10	2004-05-31	株式会社日立製作所	半導体記憶装置
US5396124A (en) *	1992-09-30	1995-03-07	Matsushita Electric Industrial Co., Ltd.	Circuit redundancy having a variable impedance circuit
US5311481A (en) *	1992-12-17	1994-05-10	Micron Technology, Inc.	Wordline driver circuit having a directly gated pull-down device
GB9305801D0 (en) *	1993-03-19	1993-05-05	Deans Alexander R	Semiconductor memory system
US5323353A (en) *	1993-04-08	1994-06-21	Sharp Microelectronics Technology Inc.	Method and apparatus for repair of memory by redundancy
JP2616544B2 (ja) *	1993-09-22	1997-06-04	日本電気株式会社	半導体記憶装置
EP0661636B1 (de) *	1993-12-29	1998-09-23	STMicroelectronics S.r.l.	Integrierte Programmierschaltung für eine elektrisch programmierbare Halbleiterspeicheranordnung mit Redundanz
JPH08227597A (ja) *	1995-02-21	1996-09-03	Mitsubishi Electric Corp	半導体記憶装置
US5623448A (en) *	1995-05-09	1997-04-22	Texas Instruments Incorporated	Apparatus and method for implementing integrated circuit memory device component redundancy using dynamic power distribution switching
KR0157339B1 (ko) *	1995-06-28	1998-12-01	김광호	반도체 메모리의 불량셀 구제회로
JP3036411B2 (ja) *	1995-10-18	2000-04-24	日本電気株式会社	半導体記憶集積回路装置
US6157582A (en) *	1997-11-17	2000-12-05	Cypress Semiconductor Corporation	Dynamic pull-up suppressor for column redundancy write schemes with redundant data lines
US5963489A (en) *	1998-03-24	1999-10-05	International Business Machines Corporation	Method and apparatus for redundancy word line replacement in a repairable semiconductor memory device
JP3638214B2 (ja) *	1998-07-30	2005-04-13	株式会社沖マイクロデザイン	冗長回路
FR2811132B1 (fr) *	2000-06-30	2002-10-11	St Microelectronics Sa	Circuit de memoire dynamique comportant des cellules de secours
DE10032274A1 (de)	2000-07-03	2002-01-24	Infineon Technologies Ag	Integrierte Speicher mit Speicherzellen mit magnetoresistivem Speichereffekt
US6584029B2 (en) *	2001-08-09	2003-06-24	Hewlett-Packard Development Company, L.P.	One-time programmable memory using fuse/anti-fuse and vertically oriented fuse unit memory cells
US7499352B2 (en) *	2006-05-19	2009-03-03	Innovative Silicon Isi Sa	Integrated circuit having memory array including row redundancy, and method of programming, controlling and/or operating same
WO2015071965A1 (ja) *	2013-11-12	2015-05-21	ユニサンティスエレクトロニクスシンガポールプライベートリミテッド	半導体装置
US10847651B2 (en) *	2018-07-18	2020-11-24	Micron Technology, Inc.	Semiconductor devices including electrically conductive contacts and related systems and methods

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58208998A (ja) *	1982-05-28	1983-12-05	Toshiba Corp	半導体ｃｍｏｓメモリ
JPS59178691A (ja) *	1983-03-29	1984-10-09	Fujitsu Ltd	半導体記憶装置
US4587639A (en) *	1983-03-28	1986-05-06	Fujitsu Limited	Static semiconductor memory device incorporating redundancy memory cells
JPS60173799A (ja) *	1984-02-10	1985-09-07	Nippon Telegr & Teleph Corp <Ntt>	半導体メモリ装置
JPS60195797A (ja) *	1984-03-16	1985-10-04	Mitsubishi Electric Corp	半導体記憶装置の冗長回路
FR2576133B1 (fr) *	1985-01-15	1991-04-26	Eurotechnique Sa	Memoire en circuit integre a haute fiabilite
JPS621189A (ja) *	1985-03-18	1987-01-07	Nec Corp	Ｍｏｓメモリ回路
JPS62102500A (ja) *	1985-10-28	1987-05-12	Toshiba Corp	半導体メモリのワ−ド線駆動系
JPS63104290A (ja) *	1986-10-21	1988-05-09	Nec Corp	半導体記憶装置
US4837747A (en) *	1986-11-29	1989-06-06	Mitsubishi Denki Kabushiki Kaisha	Redundary circuit with a spare main decoder responsive to an address of a defective cell in a selected cell block
US4916336A (en) *	1987-12-09	1990-04-10	Texas Instruments Incorporated	Column select circuit
JPH01251397A (ja) *	1988-03-30	1989-10-06	Toshiba Corp	半導体メモリ装置
JPH0682807B2 (ja) *	1988-09-12	1994-10-19	株式会社東芝	半導体メモリ
WO1990012401A1 (en) *	1989-04-13	1990-10-18	Dallas Semiconductor Corporation	Memory with power supply intercept and redundancy logic

1990
- 1990-11-16 JP JP2312044A patent/JP2782948B2/ja not_active Expired - Fee Related
1991
- 1991-11-14 EP EP91310506A patent/EP0486295B1/de not_active Expired - Lifetime
- 1991-11-14 DE DE69132533T patent/DE69132533T2/de not_active Expired - Fee Related
- 1991-11-15 US US07/792,623 patent/US5295114A/en not_active Expired - Fee Related
- 1991-11-16 KR KR1019910020398A patent/KR960005367B1/ko not_active IP Right Cessation

Also Published As

Publication number	Publication date
DE69132533T2 (de)	2001-08-09
EP0486295A2 (de)	1992-05-20
US5295114A (en)	1994-03-15
EP0486295B1 (de)	2001-02-14
JP2782948B2 (ja)	1998-08-06
JPH04182989A (ja)	1992-06-30
KR960005367B1 (ko)	1996-04-24
EP0486295A3 (en)	1993-07-28

Publication	Publication Date	Title
DE69132533D1 (de)	2001-03-22	Halbleiterspeichergerät mit redundanter Schaltung
DE69115741D1 (de)	1996-02-08	Kurzschlussdetektor für Speichermatrix
DE69914746D1 (de)	2004-03-18	Halbleiter-schaltsstromvorrichtung mit betriebsverstärker und verfahren zur herstellung
IT1271540B (it)	1997-05-30	Dispositivo a semiconduttore per permettere una semplice rivelazione esterna dell'utilizzo di un circuito ridondante e relativo dispositivo di memoria a semiconduttore
EP0083212A3 (en)	1985-12-04	Semiconductor memory device
KR910003670A (ko)	1991-02-28	정적형 반도체 기억장치
KR910016009A (ko)	1991-09-30	메모리 장치내의 결손을 제거하기 위한 리던던시 구조
ITMI922473A1 (it)	1994-04-28	Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
DE68926159D1 (de)	1996-05-09	Halbleiterspeichergerät mit verbessertem Redundanzdekoder
DE68924637D1 (de)	1995-11-30	Speicheranordnung für Mehrprozessorsysteme.
JPS6478023A (en)	1989-03-23	Programmable logic device
JPS56137589A (en)	1981-10-27	Semiconductor storage device
ATE220228T1 (de)	2002-07-15	Integrierte halbleiter-speichervorrichtung mit redundanzschaltungsanordnung
KR910005459A (ko)	1991-03-30	반도체메모리장치 및 그 제조방법
DE69226506D1 (de)	1998-09-10	Halbleiterspeicher mit Einschalt-Rücksetzsteuerung von ausser Betrieb geschalteten Reihen
EP0553788A3 (en)	1994-12-14	Semiconductor memory device incorporating redundancy memory cells having parallel test function
KR930003139A (ko)	1993-02-24	반도체 메모리
JPS6446288A (en)	1989-02-20	Semiconductor memory device
DE3778388D1 (de)	1992-05-27	Halbleiter speichergeraet.
KR900019047A (ko)	1990-12-22	반도체 기억장치
JPS5724094A (en)	1982-02-08	Semiconductor storage device
JPS647397A (en)	1989-01-11	Nonvolatile semiconductor memory
FR2300391A1 (fr)	1976-09-03	Memoire remanente a acces selectif
JPS55160393A (en)	1980-12-13	Read voltage setting system for semiconductor memory
JPS6435945A (en)	1989-02-07	Semiconductor integrated circuit

Legal Events

Date	Code	Title	Description
2002-03-21	8364	No opposition during term of opposition
2003-07-10	8327	Change in the person/name/address of the patent owner	Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP
2005-09-08	8339	Ceased/non-payment of the annual fee