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CN2612062Y - Image sensor that is immune to side light interference - Google Patents

Image sensor that is immune to side light interference Download PDF

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Publication number
CN2612062Y
CN2612062Y CNU032403763U CN03240376U CN2612062Y CN 2612062 Y CN2612062 Y CN 2612062Y CN U032403763 U CNU032403763 U CN U032403763U CN 03240376 U CN03240376 U CN 03240376U CN 2612062 Y CN2612062 Y CN 2612062Y
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CN
China
Prior art keywords
substrate
image sensor
frame body
side light
image sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNU032403763U
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Chinese (zh)
Inventor
刘裕文
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Kingpak Technology Inc
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Kingpak Technology Inc
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Priority to CNU032403763U priority Critical patent/CN2612062Y/en
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Publication of CN2612062Y publication Critical patent/CN2612062Y/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

The utility model provides an image sensor ware of preventing side light source interference, for providing an image sensor ware of preventing side light source interference image receiving effect, provides the utility model discloses. It includes a substrate, an image sensing chip and a transparent layer; the substrate is provided with an upper surface on which a plurality of first contacts are formed and a lower surface on which a plurality of second contacts are formed; the image sensing chip is provided with a plurality of welding pads which are arranged on the upper surface of the substrate and are electrically connected to the first connecting points of the substrate; the light transmission layer is in a door shape and consists of a frame body and a cover body covering the frame body, and the frame body is adhered to the upper surface of the substrate; the periphery of the frame body is provided with a protective layer for preventing the interference of the side light source.

Description

防侧光源干扰的影像感测器Image sensor that is immune to side light interference

技术领域technical field

本实用新型属于影像感测器,特别是一种防侧光源干扰的影像感测器。The utility model belongs to an image sensor, in particular to an image sensor capable of preventing side light source interference.

背景技术Background technique

一般感测器可用来感测为光讯号或声音讯号的讯号。影像感测器系用来接收光讯号或影像讯号。当接收光讯号后,可透过影像感测器将光讯号转变成电讯号,藉由基板传递至电路板上。General sensors can be used to sense signals that are either light signals or sound signals. The image sensor is used to receive light signals or image signals. After receiving the light signal, the light signal can be converted into an electrical signal through the image sensor, and transmitted to the circuit board through the substrate.

如图1所示,习知的影像感测器包括基板10、影像感测晶片20及透光层24。As shown in FIG. 1 , a conventional image sensor includes a substrate 10 , an image sensing chip 20 and a transparent layer 24 .

基板10设有形成讯号输入端16的第一表面12及形成讯号输出端18的第二表面14。The substrate 10 has a first surface 12 forming a signal input terminal 16 and a second surface 14 forming a signal output terminal 18 .

影像感测晶片20系设置于基板10的第一表面12上,并与基板10形成电连接。The image sensing chip 20 is disposed on the first surface 12 of the substrate 10 and is electrically connected to the substrate 10 .

透光层24系黏着于基板10的第一表面12上,其中央部位形成有凹槽26,以使设置于基板10上的影像感测晶片20位于透光层24的凹槽26内。影像感测晶片20得以藉由透光层24接收光讯号。The transparent layer 24 is adhered on the first surface 12 of the substrate 10 , and a groove 26 is formed in the center thereof, so that the image sensing chip 20 disposed on the substrate 10 is located in the groove 26 of the transparent layer 24 . The image sensing chip 20 can receive light signals through the light-transmitting layer 24 .

惟,此种影像感测器具有如下缺失:However, this type of image sensor has the following disadvantages:

透光层24为透明玻璃或透明胶体,使得光源可由四面八方进入凹槽26内,从而干扰影像感测晶片20的影像接收。The light-transmitting layer 24 is transparent glass or transparent colloid, so that the light source can enter the groove 26 from all sides, thereby disturbing the image receiving of the image sensing chip 20 .

发明内容Contents of the invention

本实用新型的目的是提供一种防止侧光源干扰影像接收效果的防侧光源干扰的影像感测器。The purpose of the utility model is to provide an image sensor that prevents side light sources from interfering with the image receiving effect.

本实用新型包括基板、影像感测晶片及透光层;基板设有形成复数个第一接点的上表面及形成复数个第二接点的下表面;影像感测晶片设有复数个焊垫,其系设于基板的上表面上,且电连接至基板第一接点上;透光层为门字形状,其系由框形体及盖设于框形体上的盖体构成,框形体系黏设于基板的上表面上;框形体周缘形成用以防止侧光源干扰的防护层。The utility model includes a substrate, an image sensing chip and a light-transmitting layer; the substrate is provided with an upper surface forming a plurality of first contacts and a lower surface forming a plurality of second contacts; the image sensing chip is provided with a plurality of welding pads, and It is arranged on the upper surface of the substrate and electrically connected to the first contact point of the substrate; the light-transmitting layer is in the shape of a door, and it is composed of a frame body and a cover on the frame body. The frame system is glued to the On the upper surface of the base plate; the peripheral edge of the frame body forms a protective layer to prevent the interference of side light sources.

其中:in:

影像感测晶片藉由复数条导线电连接焊垫至基板的第一接点。The image sensing chip is electrically connected to the pad and the first contact point of the substrate through a plurality of wires.

透光层为透光玻璃。The light-transmitting layer is light-transmitting glass.

透光层为透明胶体。The transparent layer is transparent colloid.

透光层框形体周缘的防护层系以雾化粗面形成。The protective layer around the frame body of the light-transmitting layer is formed by atomized rough surface.

由于本实用新型包括基板、影像感测晶片及透光层;基板设有形成复数个第一接点的上表面及形成复数个第二接点的下表面;影像感测晶片设有复数个焊垫,其系设于基板的上表面上,且电连接至基板第一接点上;透光层为门字形状,其系由框形体及盖设于框形体上的盖体构成,框形体系黏设于基板的上表面上;框形体周缘形成用以防止侧光源干扰的防护层。封装时,可先行将复数条导线打线于基板的上表面上,再将透光层盖设于基板上时,可便于打线作业的进行;于透光层的框形体周缘形成防护层,可防止侧光源影响影像感测晶片的讯号接收。可防止侧光源干扰影像接收效果,从而达到本实用新型的目的。Since the utility model includes a substrate, an image sensing chip and a light-transmitting layer; the substrate is provided with an upper surface forming a plurality of first contacts and a lower surface forming a plurality of second contacts; the image sensing chip is provided with a plurality of welding pads, It is arranged on the upper surface of the substrate, and is electrically connected to the first contact point of the substrate; the light-transmitting layer is in the shape of a door, and it is composed of a frame body and a cover on the frame body. On the upper surface of the base plate; a protective layer is formed on the periphery of the frame body to prevent the interference of side light sources. When packaging, a plurality of wires can be bonded on the upper surface of the substrate first, and then when the light-transmitting layer is covered on the substrate, it can facilitate the wire-bonding operation; a protective layer is formed on the periphery of the frame of the light-transmitting layer, It can prevent the side light source from affecting the signal reception of the image sensor chip. It can prevent the side light source from interfering with the image receiving effect, thereby achieving the purpose of the utility model.

附图说明Description of drawings

图1、为习知的影像感测器结构示意剖视图。FIG. 1 is a schematic cross-sectional view of a conventional image sensor structure.

图2、为本实用新型结构示意剖视图。Fig. 2 is a schematic sectional view of the structure of the utility model.

具体实施方式Detailed ways

如图2所示,本实用新型包括基板30、影像感测晶片32及透光层34。As shown in FIG. 2 , the present invention includes a substrate 30 , an image sensing chip 32 and a transparent layer 34 .

基板30设有形成复数个第一接点40的上表面36及形成复数个第二接点42的下表面38。The substrate 30 has an upper surface 36 forming a plurality of first contacts 40 and a lower surface 38 forming a plurality of second contacts 42 .

影像感测晶片32设有复数个焊垫44,其系设于基板30的上表面36上,且藉由复数条导线46电连接焊垫44至基板30的第一接点40上,使影像感测晶片32的讯号传送至基板30上。The image sensing chip 32 is provided with a plurality of welding pads 44, which are arranged on the upper surface 36 of the substrate 30, and electrically connect the welding pads 44 to the first contact 40 of the substrate 30 through a plurality of wires 46, so that the image sensor Signals from the test chip 32 are transmitted to the substrate 30 .

透光层34为透光玻璃或透明胶体,其系为一体成型的门字形状,透光层34系由框形体48及盖设于框形体48上的盖体50构成,框形体48系黏设于基板30的上表面36上,用以覆盖住影像感测晶片32,使影像感测晶片32可透过透光层34的盖体50接收影像讯号,框形体48周缘系以雾化粗面形成防护层52,用以防止侧光源干扰。Translucent layer 34 is translucent glass or transparent colloid, and it is the shape of the door character of integral molding, and translucent layer 34 is made of frame body 48 and the cover body 50 that covers on the frame body 48, and frame body 48 is adhesive It is arranged on the upper surface 36 of the substrate 30 to cover the image sensor chip 32, so that the image sensor chip 32 can receive image signals through the cover body 50 of the light-transmitting layer 34, and the periphery of the frame body 48 is thickened with atomization. A protective layer 52 is formed on the surface to prevent interference from side light sources.

如上所述,本实用新型具有如下优点:As mentioned above, the utility model has the following advantages:

1、可先行将复数条导线46打线于基板30的上表面36上,再将透光层34盖设于基板30上时,可便于打线作业的进行。1. A plurality of wires 46 can be bonded on the upper surface 36 of the substrate 30 first, and then the light-transmitting layer 34 is covered on the substrate 30, which facilitates the wire bonding operation.

2、于透光层34的框形体48周缘形成防护层52,可防止侧光源影响影像感测晶片32的讯号接收。2. A protective layer 52 is formed on the periphery of the frame body 48 of the transparent layer 34 to prevent side light sources from affecting the signal reception of the image sensing chip 32 .

Claims (5)

1, a kind of image sensor of anti-sidelight source interference, it comprises substrate, image sensing wafer and photic zone; Substrate is provided with upper surface that forms a plurality of first contacts and the lower surface that forms a plurality of second contacts; Image sensing wafer is provided with a plurality of weld pads, and it is to be located on the upper surface of substrate, and is electrically connected on substrate first contact; Photic zone is a door word shape, and it is to be made of frame body and the lid that is covered on the frame body, and the shaped as frame system is glutinous to be located on the upper surface of substrate; It is characterized in that described frame body periphery forms the overcoat in order to prevent that the sidelight source from disturbing.
2, the image sensor of anti-sidelight source interference according to claim 1 is characterized in that described image sensing wafer is electrically connected first contact of weld pad to substrate by plural wires.
3, the image sensor of anti-sidelight source interference according to claim 1 is characterized in that described photic zone is a transparent glass.
4, the image sensor of anti-sidelight source interference according to claim 1 is characterized in that described photic zone is a transparent colloid.
5, the image sensor of anti-sidelight source interference according to claim 1 is characterized in that the protection series of strata of described photic zone frame body periphery form with the atomizing asperities.
CNU032403763U 2003-03-11 2003-03-11 Image sensor that is immune to side light interference Expired - Fee Related CN2612062Y (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNU032403763U CN2612062Y (en) 2003-03-11 2003-03-11 Image sensor that is immune to side light interference

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNU032403763U CN2612062Y (en) 2003-03-11 2003-03-11 Image sensor that is immune to side light interference

Publications (1)

Publication Number Publication Date
CN2612062Y true CN2612062Y (en) 2004-04-14

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Country Status (1)

Country Link
CN (1) CN2612062Y (en)

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C19 Lapse of patent right due to non-payment of the annual fee
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