CN2587061Y - High heat dissipation image sensor - Google Patents
High heat dissipation image sensor Download PDFInfo
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- CN2587061Y CN2587061Y CN02288857U CN02288857U CN2587061Y CN 2587061 Y CN2587061 Y CN 2587061Y CN 02288857 U CN02288857 U CN 02288857U CN 02288857 U CN02288857 U CN 02288857U CN 2587061 Y CN2587061 Y CN 2587061Y
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims description 7
- 239000000084 colloidal system Substances 0.000 claims description 4
- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000012858 packaging process Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
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Abstract
Description
技术领域technical field
本实用新型属于影像感测器,特别是一种高散热的影像感测器。The utility model belongs to an image sensor, in particular to an image sensor with high heat dissipation.
背景技术Background technique
如图1、图2所示,习知影像感测器包括复数影像感测晶片13、布植由线路12围成复数个供影像感测晶片13配置区域17的基板10、藉由黏胶15黏着于基板10上并形成数个与线路12相对应的镂空区域16的凸缘层14及透光玻璃20。As shown in FIG. 1 and FIG. 2 , a conventional image sensor includes a plurality of
封装时,系首先提供布植由线路1 2围成复数个供影像感晶片13配置区域17;提供凸缘层14,并藉由黏胶15将凸缘层14黏着于基板10上,以使基板10上的复数个影像感测晶片13由镂空区域16露出,再将复数条导线18电连接影像感测晶片13及基板10,最后将基板10切割成如图2所示的单颗黏着有凸缘层14的封装体。如图3所示,将单颗封装体摆置于治具22内,以定位出容置透光玻璃20的区域,再行将透光玻璃藉由粘胶24封盖于凸缘层14上,而完成影像感测晶片13的封装。When encapsulating, it is first to provide a plurality of implantation areas 17 surrounded by the circuit 12 for the configuration of the
习知影像感测器存在如下缺点:Conventional image sensors have the following disadvantages:
1、必须先行制作基板10,并于基板10上布植线路12,再行制作凸缘层14,并将凸缘层14黏着于基板10上,如此,其制造程序相当复杂,且材料费亦较高昂,使得其整体制造成本高。1. It is necessary to manufacture the
2、当完成影像感测器的封装后,必须切割成单一的封装体,由于凸缘层14系藉由黏胶15黏着于基板10上,以致于欲将其切割成单颗封装时,常造成黏胶15溢出,从而影响到基板10的讯号传输。2. After the packaging of the image sensor is completed, it must be cut into a single package. Since the
3、覆盖透光玻璃20的程序系予切割基板10后进行,此时容易造成切割屑污染影像感测晶片13,如此,将影响到影像感测晶片13的良率。3. The process of covering the light-transmitting
发明内容Contents of the invention
本实用新型的目的是提供一种简化封装制程、提高产品良率、降低成本、体积小、重量轻、散热效果好、使用寿命长的高散热的影像感测器。The purpose of the utility model is to provide a high heat dissipation image sensor which simplifies the packaging process, improves product yield, reduces cost, is small in size, light in weight, good in heat dissipation effect and long in service life.
本实用新型包括基板、凸缘层、影像感测晶片、复数条导线及透光层;基板包括复数个相互排列左右对称的金属片及位于左右对称金属片间的中间板;左右对称的金属片形成不同高度的第一、二板,中间板较第一板的水平高度为低;凸缘层包覆住基板的复数个金属片及中间板,且使金属片的第一板上表面、第二板下表面及中间板底面分别由凸缘层露出;影像感测晶片系设置于基板的中间板上;复数条导线连连接金属片第一板及影像感测片;透光层设置于凸缘层上,以覆盖住影像感测晶片。The utility model includes a substrate, a flange layer, an image sensing chip, a plurality of wires and a light-transmitting layer; the substrate includes a plurality of symmetrical metal sheets arranged mutually and an intermediate plate located between the left and right symmetrical metal sheets; the left and right symmetrical metal sheets The first and second boards of different heights are formed, and the level of the middle board is lower than that of the first board; the flange layer covers a plurality of metal sheets and the middle board of the substrate, and makes the first board surface of the metal The lower surface of the second board and the bottom surface of the middle board are respectively exposed by the flange layer; the image sensing chip is arranged on the middle board of the substrate; a plurality of wires are connected to the first board of the metal sheet and the image sensing board; the light-transmitting layer is arranged on the raised board. On the edge layer to cover the image sensing chip.
其中:in:
凸缘层系以热塑性塑胶射出成形。The flange layer is injection molded with thermoplastic.
金属片第一板与第二板间第由第三板连接。The first plate and the second plate of the metal sheet are connected by the third plate.
透光层为透光玻璃。The light-transmitting layer is light-transmitting glass.
透光层为透明胶体。The transparent layer is transparent colloid.
基板的复数个相互排列左右对称的金属片及中间板系以金属一体冲压成型。A plurality of symmetrically arranged metal sheets and an intermediate plate of the base plate are integrally punched and formed by metal.
中间板系与第二板的水平高度相同。The middle slab is at the same level as the second slab.
由于本实用新型包括基板、凸缘层、影像感测晶片、复数条导线及透光层;基板包括复数个相互排列左右对称的金属片及位于左右对称金属片间的中间板;左右对称的金属片形成不同高度的第一、二板,中间板较第一板的水平高度为低;凸缘层包覆住基板的复数个金属片及中间板,且使金属片的第一板上表面、第二板下表面及中间板底面分别由凸缘层露出;影像感测晶片系设置于基板的中间板上;复数条导线连连接金属片第一板及影像感测片;透光层设置于凸缘层上,以覆盖住影像感测晶片。因基板系由复数个可输出讯号的金属片构成,包覆住基板的复数个金属片及中间板的凸缘层使金属片的第一板上表面、第二板下表面及中间板底面分别由凸缘层露出,不仅可省去习知于基板上布植线路所产生的费用以有效降低生产成本,而且可更有效地将影像感测晶片的热量散出,使其散热效果更佳;影像感测晶片系设置于较低水平高度的中间板上,可降低整体封装高度。不仅简化封装制程、提高产品良率、降低成本,而且体积小、重量轻、散热效果好、使用寿命长,从而达到本实用新型的目的。Since the utility model includes a substrate, a flange layer, an image sensing chip, a plurality of wires and a light-transmitting layer; The sheets form the first and second boards of different heights, and the middle board is lower than the first board; the flange layer covers the plurality of metal sheets and the middle board of the substrate, and makes the first board surface of the metal sheet, The lower surface of the second plate and the bottom surface of the middle plate are respectively exposed by the flange layer; the image sensing chip is arranged on the middle plate of the substrate; a plurality of wires are connected to the first plate of the metal sheet and the image sensing piece; the light-transmitting layer is arranged on the middle plate of the substrate on the flange layer to cover the image sensing chip. Because the substrate is composed of a plurality of metal sheets that can output signals, the plurality of metal sheets covering the substrate and the flange layer of the intermediate plate make the upper surface of the first plate, the lower surface of the second plate and the bottom surface of the intermediate plate of the metal sheet respectively The exposure of the flange layer not only saves the cost of conventional wiring on the substrate to effectively reduce the production cost, but also dissipates the heat of the image sensor chip more effectively, so that the heat dissipation effect is better; The image sensing chip is arranged on the middle plate with a lower level, which can reduce the overall package height. It not only simplifies the packaging process, improves product yield, and reduces costs, but also has small volume, light weight, good heat dissipation effect, and long service life, thereby achieving the purpose of the utility model.
附图说明Description of drawings
图1、为习知的影像感测器分解结构示意立体图。FIG. 1 is a schematic perspective view of a conventional image sensor exploded structure.
图2、为习知的影像感测器结构示意剖视图。FIG. 2 is a schematic cross-sectional view of a conventional image sensor structure.
图3、为习知的影像感测器结构示意剖视图(封装后)。FIG. 3 is a schematic cross-sectional view of a conventional image sensor structure (after packaging).
图4、为本实用新型结构示意剖视图。Fig. 4 is a schematic sectional view of the structure of the utility model.
图5、为本实用新型结构示意剖视图(透光层为透明胶体)。Fig. 5 is a schematic cross-sectional view of the structure of the utility model (the light-transmitting layer is a transparent colloid).
具体实施方式Detailed ways
如图4所示,本实用新型系用以设置于印刷电路板上,其包括基板70、凸缘层72、影像感测晶片74、复数条导线76及透光层78。As shown in FIG. 4 , the present invention is used to be disposed on a printed circuit board, which includes a
基板70系以金属一体冲压成型,其包括有复数个相互排列左右对称的金属片80及位于左右对称的金属片80间的中间板81,左右对称的每一金属片80形成有不同高度的第一板82及第二板84,且第一板82与第二板84间藉由第三板83相互连接,而中间板81系较第一板82的水平高度为低,在本实施例中,中间板81系与第二板84为相同的水平高度,第二板84系电连接至印刷电路板上,用以将讯号传递至印刷电路板。The
凸缘层72系以热塑性塑胶经由射出模具直接与复数个金属片80接着成型U字形状,而于基板70周缘形成框形结构,以于中间板81位置形成容置区85,且凸缘层72将复数个金属片80包覆住,并使金属片80的第一板82及第二板84由凸缘层72露出,而中间板81底部亦露出凸缘层72,亦即第一板82的上表面及第二板84的下表面皆不被凸缘层72包覆,使第二板84的下表面可电连接至印刷电路板。而中间板81的底面露出凸缘层72,以便于将热量有效地散出,可得到较佳的散热效果。The
影像感测晶片74系设置于基板70的中间板81上,并位于容置区85内,其上设有复数个焊垫86。由于中间板81系较第一板82的水平高度为低,因此,当影像感测晶片74设置于中间板81上时,整个封装体的高度将大为降低,可达到轻薄短小的目的。且由于中间板81系由凸缘层72外露,因此,影像感测晶片74的热量传递至中间板81后,可直接与外界空气接触,使其散热效果更佳。The
复数条导线76的一端90系电连接至影像感测晶片74的焊垫86,另一端92系电连接至金属片80的第一板82,使得影像感测晶片74的讯号得以传递至基板70上,并藉由基板70的第二板84传递至印刷电路板。One
透光层78为透光玻璃,其系覆盖于凸缘层72上,用以覆盖住影像感测晶片74,使影像感测晶片74透过透光层78接收光讯号。The light-transmitting
如图5所示,透光层78a亦可为透明胶体,其系填充于凸缘层72所形成的容置区85内,而将影像感测晶片74包覆住,使得影像感测晶片74得以透过透光层78a接收光讯号。As shown in Figure 5, the transparent layer 78a can also be a transparent colloid, which is filled in the
如上所述,本实用新型归纳有以下优点:As mentioned above, the utility model has the following advantages:
1、以复数个金属片80构成基板70,并以每一金属片80输出讯号,可省去习知于基板上布植线路所产生的费用,因此,可有效降低生产成本。1. The
2、以射出方式直接形成所需的凸缘层72并包覆住复数个金属片80,可减化习知黏着制程,且可避免切割成单颗封装体所产生的溢胶情形,可有效地提高产品良率。2. The required
3、影像感测晶片74系设置于较低水平高度的中间板81上,可降低整体封装高度。3. The
4、中间板81系直接与外界空气接触,可更有效地将影像感测晶片74的热量散出,使其散热效果更佳。4. The
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100444396C (en) * | 2003-12-02 | 2008-12-17 | 三星电子株式会社 | Solid-state imaging device, wiring substrate, and method of manufacturing same |
CN100544007C (en) * | 2005-11-16 | 2009-09-23 | 鸿富锦精密工业(深圳)有限公司 | Image Sensor Package Structure |
CN100546026C (en) * | 2007-04-29 | 2009-09-30 | 鸿富锦精密工业(深圳)有限公司 | image capture device |
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2002
- 2002-11-26 CN CN02288857U patent/CN2587061Y/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100444396C (en) * | 2003-12-02 | 2008-12-17 | 三星电子株式会社 | Solid-state imaging device, wiring substrate, and method of manufacturing same |
CN100544007C (en) * | 2005-11-16 | 2009-09-23 | 鸿富锦精密工业(深圳)有限公司 | Image Sensor Package Structure |
CN100546026C (en) * | 2007-04-29 | 2009-09-30 | 鸿富锦精密工业(深圳)有限公司 | image capture device |
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