CN1703779A - 半导体集成电路 - Google Patents
半导体集成电路 Download PDFInfo
- Publication number
- CN1703779A CN1703779A CNA038254328A CN03825432A CN1703779A CN 1703779 A CN1703779 A CN 1703779A CN A038254328 A CNA038254328 A CN A038254328A CN 03825432 A CN03825432 A CN 03825432A CN 1703779 A CN1703779 A CN 1703779A
- Authority
- CN
- China
- Prior art keywords
- circuit
- voltage
- transistor
- semiconductor integrated
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000004044 response Effects 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 25
- 238000010586 diagram Methods 0.000 description 26
- 230000006870 function Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
- H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
- H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
- H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0032—Control circuits allowing low power mode operation, e.g. in standby mode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dc-Dc Converters (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/008212 WO2005001938A1 (ja) | 2003-06-27 | 2003-06-27 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1703779A true CN1703779A (zh) | 2005-11-30 |
CN1307720C CN1307720C (zh) | 2007-03-28 |
Family
ID=33549055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038254328A Expired - Fee Related CN1307720C (zh) | 2003-06-27 | 2003-06-27 | 半导体集成电路 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7336108B2 (zh) |
JP (1) | JP4032066B2 (zh) |
CN (1) | CN1307720C (zh) |
WO (1) | WO2005001938A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101387892B (zh) * | 2007-09-11 | 2011-04-13 | 株式会社理光 | 稳压电路 |
CN101385242B (zh) * | 2005-07-25 | 2013-09-04 | 快捷半导体有限公司 | 大供电范围的差动线路驱动器 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7482860B2 (en) * | 2004-01-19 | 2009-01-27 | Nxp B.V. | MOS switching circuit |
JP4425727B2 (ja) * | 2004-02-27 | 2010-03-03 | Necエレクトロニクス株式会社 | 電源回路 |
KR100713083B1 (ko) * | 2005-03-31 | 2007-05-02 | 주식회사 하이닉스반도체 | 내부전원 생성장치 |
JP2007251351A (ja) * | 2006-03-14 | 2007-09-27 | Renesas Technology Corp | 半導体装置 |
KR100890042B1 (ko) * | 2006-12-29 | 2009-03-25 | 주식회사 하이닉스반도체 | 입력 버퍼 회로 |
US8164378B2 (en) * | 2008-05-06 | 2012-04-24 | Freescale Semiconductor, Inc. | Device and technique for transistor well biasing |
US8223576B2 (en) * | 2009-03-31 | 2012-07-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Regulators regulating charge pump and memory circuits thereof |
KR101184805B1 (ko) * | 2010-12-30 | 2012-09-20 | 에스케이하이닉스 주식회사 | 전압 다운 컨버터 |
TWI492504B (zh) * | 2012-03-24 | 2015-07-11 | Richtek Technology Corp | 具有功率因子校正功能的電源供應電路,與用於其中之自動增益控制電路及其控制方法 |
CN105337616B (zh) * | 2015-12-04 | 2018-11-20 | 上海兆芯集成电路有限公司 | 数字转模拟转换器以及高压容差电路 |
WO2020098476A1 (en) * | 2018-11-13 | 2020-05-22 | Changxin Memory Technologies, Inc. | Input buffer circuit, intelligent optimization method, and semiconductor memory thereof |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS525347B2 (zh) * | 1973-09-14 | 1977-02-12 | ||
US4712021A (en) * | 1985-06-28 | 1987-12-08 | Deutsche Itt Industries Gmbh | Cmos inverter |
US5179297A (en) * | 1990-10-22 | 1993-01-12 | Gould Inc. | CMOS self-adjusting bias generator for high voltage drivers |
JP2748733B2 (ja) * | 1991-08-26 | 1998-05-13 | 日本電気株式会社 | 半導体メモリ |
US5278467A (en) * | 1992-07-14 | 1994-01-11 | Intel Corporation | Self-biasing input stage for high-speed low-voltage communication |
JP3583482B2 (ja) * | 1994-10-04 | 2004-11-04 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US6009034A (en) * | 1995-08-15 | 1999-12-28 | Micron Technology, Inc. | Memory device with distributed voltage regulation system |
JPH09326194A (ja) * | 1996-06-05 | 1997-12-16 | Mitsubishi Electric Corp | 降圧回路 |
JPH10335700A (ja) * | 1997-06-04 | 1998-12-18 | Toshiba Corp | 半導体発光素子およびその製造方法 |
JPH1166855A (ja) * | 1997-06-10 | 1999-03-09 | Fujitsu Ltd | 電位検出回路、半導体装置、及び半導体記憶装置 |
US5999020A (en) * | 1997-11-25 | 1999-12-07 | Intel Corporation | High-speed, differential pair input buffer |
JP3323119B2 (ja) * | 1997-11-28 | 2002-09-09 | 株式会社東芝 | 半導体集積回路装置 |
JP3280623B2 (ja) * | 1998-08-11 | 2002-05-13 | 沖電気工業株式会社 | チャージポンプ回路の駆動制御回路 |
JP3449465B2 (ja) * | 1998-10-07 | 2003-09-22 | 富士通株式会社 | 入力回路及び半導体集積回路装置 |
JP4397062B2 (ja) * | 1998-11-27 | 2010-01-13 | 株式会社ルネサステクノロジ | 電圧発生回路および半導体記憶装置 |
US6477079B2 (en) * | 1999-05-18 | 2002-11-05 | Kabushiki Kaisha Toshiba | Voltage generator for semiconductor device |
JP2001068626A (ja) | 1999-08-27 | 2001-03-16 | Mitsubishi Electric Corp | 半導体装置 |
JP3988809B2 (ja) | 1999-08-30 | 2007-10-10 | 大日本スクリーン製造株式会社 | 基板ピッチ変換装置 |
JP3773718B2 (ja) * | 1999-09-20 | 2006-05-10 | 株式会社東芝 | 半導体集積回路 |
JP3438674B2 (ja) * | 1999-10-21 | 2003-08-18 | 松下電器産業株式会社 | 窒化物半導体素子の製造方法 |
JP4557342B2 (ja) * | 2000-01-13 | 2010-10-06 | 富士通セミコンダクター株式会社 | 半導体装置 |
US6462613B1 (en) * | 2000-06-20 | 2002-10-08 | Infineon Technologies Ag | Power controlled input receiver |
JP3869690B2 (ja) * | 2000-07-25 | 2007-01-17 | Necエレクトロニクス株式会社 | 内部電圧レベル制御回路および半導体記憶装置並びにそれらの制御方法 |
KR100343380B1 (ko) * | 2000-10-19 | 2002-07-15 | 윤종용 | 전압 레벨 검출회로 및 이를 이용한 전압 발생회로 |
KR100390154B1 (ko) * | 2000-12-30 | 2003-07-04 | 주식회사 하이닉스반도체 | 반도체 메모리장치의 차지 펌프회로 |
DE60129786T2 (de) * | 2001-01-15 | 2008-04-30 | Stmicroelectronics S.R.L., Agrate Brianza | Verfahren und Schaltung zum dynamischen Auslesen einer Speicherzelle, insbesondere einer nichtflüchtigen Multibitspeicherzelle |
JP3673190B2 (ja) | 2001-06-18 | 2005-07-20 | 富士通株式会社 | 電圧発生回路、半導体装置及び電圧発生回路の制御方法 |
CN1224976C (zh) * | 2001-08-29 | 2005-10-26 | 力旺电子股份有限公司 | 升压电路 |
JP3575453B2 (ja) * | 2001-09-14 | 2004-10-13 | ソニー株式会社 | 基準電圧発生回路 |
KR100543318B1 (ko) * | 2002-10-07 | 2006-01-20 | 주식회사 하이닉스반도체 | 부스팅 전압 제어회로 |
KR100536603B1 (ko) * | 2003-07-10 | 2005-12-14 | 삼성전자주식회사 | 선택 모드를 갖는 전하 펌프 회로 |
KR100572323B1 (ko) * | 2003-12-11 | 2006-04-19 | 삼성전자주식회사 | 멀티레벨 고전압 발생장치 |
JP4255082B2 (ja) * | 2005-06-27 | 2009-04-15 | 富士通マイクロエレクトロニクス株式会社 | 電圧供給回路および半導体メモリ |
WO2007017926A1 (ja) * | 2005-08-08 | 2007-02-15 | Spansion Llc | 半導体装置およびその制御方法 |
-
2003
- 2003-06-27 CN CNB038254328A patent/CN1307720C/zh not_active Expired - Fee Related
- 2003-06-27 JP JP2005503227A patent/JP4032066B2/ja not_active Expired - Fee Related
- 2003-06-27 WO PCT/JP2003/008212 patent/WO2005001938A1/ja active Application Filing
-
2005
- 2005-05-12 US US11/127,153 patent/US7336108B2/en not_active Expired - Fee Related
-
2007
- 2007-01-11 US US11/651,966 patent/US7538602B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101385242B (zh) * | 2005-07-25 | 2013-09-04 | 快捷半导体有限公司 | 大供电范围的差动线路驱动器 |
CN101387892B (zh) * | 2007-09-11 | 2011-04-13 | 株式会社理光 | 稳压电路 |
Also Published As
Publication number | Publication date |
---|---|
CN1307720C (zh) | 2007-03-28 |
US7336108B2 (en) | 2008-02-26 |
JPWO2005001938A1 (ja) | 2006-08-10 |
WO2005001938A1 (ja) | 2005-01-06 |
US20050200400A1 (en) | 2005-09-15 |
JP4032066B2 (ja) | 2008-01-16 |
US7538602B2 (en) | 2009-05-26 |
US20070109036A1 (en) | 2007-05-17 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081024 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20081024 Address after: Tokyo, Japan, Japan Patentee after: Fujitsu Microelectronics Ltd. Address before: Kanagawa Patentee before: Fujitsu Ltd. |
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C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTORS CO., LTD Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP03 | Change of name, title or address |
Address after: Kanagawa Patentee after: Fujitsu Semiconductor Co., Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SUOSI FUTURE CO., LTD. Free format text: FORMER OWNER: FUJITSU SEMICONDUCTOR CO., LTD. Effective date: 20150525 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150525 Address after: Kanagawa Patentee after: Co., Ltd. Suo Si future Address before: Kanagawa Patentee before: Fujitsu Semiconductor Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070328 Termination date: 20200627 |