CN107507873B - A kind of vacuous solar energy electrooptical device - Google Patents
A kind of vacuous solar energy electrooptical device Download PDFInfo
- Publication number
- CN107507873B CN107507873B CN201710661892.3A CN201710661892A CN107507873B CN 107507873 B CN107507873 B CN 107507873B CN 201710661892 A CN201710661892 A CN 201710661892A CN 107507873 B CN107507873 B CN 107507873B
- Authority
- CN
- China
- Prior art keywords
- layer
- kovar alloy
- gaalas
- gaas
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 31
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 28
- 239000010432 diamond Substances 0.000 claims abstract description 28
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000003566 sealing material Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract description 7
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 6
- 238000001994 activation Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 2
- 238000001962 electrophoresis Methods 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 4
- 238000010248 power generation Methods 0.000 description 8
- 238000001228 spectrum Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
- H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Landscapes
- Photovoltaic Devices (AREA)
Abstract
本发明提供了一种真空太阳能光电转换器，包括透射式GaAlAs/GaAs光电阴极组件、铟封材料、第一可伐合金、第二可伐合金、圆柱形陶瓷腔与金刚石薄膜阳极组件；阴极组件自上而下由玻璃窗口、增透层、GaAlAs窗口层、GaAs发射层、Cs/O激活层依次叠加构成；阳极组件自伤而下由金刚石膜层、Si衬底层、玻璃窗口构成；阴极组件、金刚石薄膜阳极组件之间设置通道，阴极组件中的各部件通过铟封材料与第一可伐合金相连，阳极组件中的各部件通过铟封材料与第二可伐合金相连，第一可伐合金与第二可伐合金之间通过圆柱形陶瓷腔相连，两极之间形成真空腔体。
The invention provides a vacuum solar photoelectric converter, comprising a transmissive GaAlAs/GaAs photocathode assembly, an indium sealing material, a first Kovar alloy, a second Kovar alloy, a cylindrical ceramic cavity and a diamond thin film anode assembly; the cathode assembly From top to bottom, it is composed of glass window, anti-reflection layer, GaAlAs window layer, GaAs emission layer, and Cs/O activation layer. The anode assembly is composed of diamond film layer, Si substrate layer, and glass window. , A channel is set between the diamond film anode components, each component in the cathode component is connected with the first Kovar alloy through indium sealing material, and each component in the anode component is connected with the second kovar alloy through the indium sealing material, and the first kovar alloy The alloy and the second Kovar alloy are connected through a cylindrical ceramic cavity, and a vacuum cavity is formed between the two poles.
Description
技术领域technical field
本发明涉及一种太阳能电池和半导体技术，特别是一种真空太阳能光电转换器件。The invention relates to a solar cell and semiconductor technology, in particular to a vacuum solar photoelectric conversion device.
背景技术Background technique
太阳能作为一种拥有巨大储能的可再生能源，一直是世界各国绿色新能源研究的重点。从世界太阳能资源分布来看，我国也是一个太阳能资源非常丰富的国家，平均每年太阳能辐射总量在6000MJ/m2以上。目前太阳能的利用方式十分多样，其中太阳能发电是利用太阳能的一种重要方法，太阳能发电技术主要有两种比较成熟的方法：光伏发电和光热发电。光伏发电的光电转换效率可以达到28％以上，但是发电成本相对较高，而光热发电的发电效率在12％-20％之间。这两种方式都没有完全利用太阳光谱的能量。同时，常规的太阳能转换器件都是固态结构，且只能利用太阳光谱中的一部分能量，并不能完全利用整个光谱的能量。同时常规的太阳能转换器件都是固态结构，且只能利用太阳光谱中的一部分能量，并不能完全利用整个光谱的能量。As a renewable energy with huge energy storage, solar energy has always been the focus of green new energy research in countries around the world. From the perspective of the distribution of solar energy resources in the world, China is also a country rich in solar energy resources, with an average annual total solar radiation of more than 6000MJ/m 2 . At present, there are many ways to use solar energy, among which solar power generation is an important method of using solar energy. There are two mature methods of solar power generation technology: photovoltaic power generation and photothermal power generation. The photoelectric conversion efficiency of photovoltaic power generation can reach more than 28%, but the power generation cost is relatively high, while the power generation efficiency of solar thermal power generation is between 12% and 20%. Neither approach fully utilizes the energy of the solar spectrum. Meanwhile, conventional solar energy conversion devices are all solid-state structures, and can only utilize a part of the energy in the solar spectrum, but cannot fully utilize the energy of the entire spectrum. At the same time, conventional solar energy conversion devices are all solid-state structures, and can only utilize a part of the energy in the solar spectrum, but cannot fully utilize the energy of the entire spectrum.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于提供一种真空太阳能光电转换器，包括透射式GaAlAs/GaAs光电阴极组件、铟封材料、第一可伐合金、第二可伐合金、圆柱形陶瓷腔与金刚石薄膜阳极组件；透射式GaAlAs/GaAs光电阴极组件自上而下由玻璃窗口、增透层、GaAlAs窗口层、GaAs发射层、Cs/O激活层依次叠加构成；金刚石薄膜阳极组件自伤而下由金刚石膜层、Si衬底层、玻璃窗口构成；透射式GaAlAs/GaAs光电阴极组件、金刚石薄膜阳极组件之间设置通道，透射式GaAlAs/GaAs光电阴极组件中的各部件通过铟封材料与第一可伐合金相连，金刚石薄膜阳极组件中的各部件通过铟封材料与第二可伐合金相连，第一可伐合金与第二可伐合金之间通过圆柱形陶瓷腔相连，两极之间形成真空腔体。The purpose of the present invention is to provide a vacuum solar photoelectric converter, comprising a transmissive GaAlAs/GaAs photocathode assembly, an indium sealing material, a first Kovar alloy, a second Kovar alloy, a cylindrical ceramic cavity and a diamond thin film anode assembly; The transmissive GaAlAs/GaAs photocathode assembly is composed of glass window, antireflection layer, GaAlAs window layer, GaAs emission layer, and Cs/O activation layer from top to bottom. A Si substrate layer and a glass window are formed; a channel is set between the transmissive GaAlAs/GaAs photocathode assembly and the diamond thin film anode assembly, and each component in the transmissive GaAlAs/GaAs photocathode assembly is connected to the first Kovar alloy through an indium sealing material, The components in the diamond thin film anode assembly are connected to the second Kovar alloy through an indium sealing material, the first Kovar alloy and the second Kovar alloy are connected through a cylindrical ceramic cavity, and a vacuum cavity is formed between the two poles.
本发明中提出的真空太阳能光电转换器件，利用真空结构将阴极和阳极分离，当阴极吸收入射太阳辐射能可以从阴极发射出电子，且阴极受太阳光照射会使阴极温度升高，在热能的帮助下可以进一步提升阴极的光电子发射效率，从而充分利用了太阳的光能和热能，使太阳能的转换效率大幅提升。本发明中的阴极采用GaAlAs/GaAs光电阴极，其内建电场的加速和低界面复合速率可以进一步提升阴极出射电流密度；阳极采用金刚石膜，由于其具有较低功函数可以保证两极之间较大的电势差，使光生电子被阳极充分收集。The vacuum solar photoelectric conversion device proposed in the present invention uses a vacuum structure to separate the cathode and the anode. When the cathode absorbs incident solar radiation, electrons can be emitted from the cathode, and the cathode is irradiated by sunlight to increase the temperature of the cathode. With the help of the photoelectron emission efficiency of the cathode, the photoelectron emission efficiency of the cathode can be further improved, so that the light energy and thermal energy of the sun can be fully utilized, and the conversion efficiency of the solar energy can be greatly improved. The cathode in the present invention adopts GaAlAs/GaAs photocathode, and the acceleration of the built-in electric field and the low interface recombination rate can further improve the cathode outgoing current density; the anode adopts diamond film, which can ensure a large gap between the two electrodes due to its lower work function. The potential difference is so that the photogenerated electrons are fully collected by the anode.
下面结合说明书附图对本发明做进一步描述。The present invention will be further described below with reference to the accompanying drawings.
附图说明Description of drawings
图1是本发明真空太阳能光电转换器件的封装结构图。Fig. 1 is the package structure diagram of the vacuum solar photoelectric conversion device of the present invention.
图2是本发明真空太阳能光电转换器件的工作原理图。Fig. 2 is a working principle diagram of the vacuum solar photoelectric conversion device of the present invention.
图3是本发明真空太阳能光电转换器件的透射式GaAlAs/GaAs光电阴极的实验量子效率曲线图。3 is a graph showing the experimental quantum efficiency of the transmissive GaAlAs/GaAs photocathode of the vacuum solar photoelectric conversion device of the present invention.
具体实施方式Detailed ways
结合图1，一种真空太阳能光电转换器件，包括透射式GaAlAs/GaAs光电阴极组件[1]、铟封材料[2]、第一可伐合金[3-1]、第二可伐合金[3-2]、圆柱形陶瓷腔[4]与金刚石薄膜阳极[10]，透射式GaAlAs/GaAs光电阴极组件通过铟封材2与第一可伐合金3-1相连，第一可伐合金3-1通过圆柱形陶瓷腔与第二可伐合金3-2相连，最后第二可伐合金3-2再通过铟封材料2与金刚石阳极10相连。第一可伐合金3-1可以充当透射式GaAlAs/GaAs光电阴极组件1的管脚，第二可伐合金3-2充当金刚石薄膜阳极组件的管脚；透射式GaAlAs/GaAs光电阴极组件1自上而下由Corning 7056#玻璃窗口[5]、增透层[6]、GaAlAs窗口层[7]、GaAs发射层[8]以及Cs/O激活层[9]依次叠加构成。低功函数金刚石阳极组件主要由金刚石膜层[11]，和Si衬底层[12]和Corning 7056#玻璃窗口[13]构成。第一可伐合金3-1可以充当透射式GaAlAs/GaAs光电阴极组件1的管脚，第二可伐合金3-2充当真空光电转换器件中收集电子的金刚石薄膜阳极的管脚，GaAlAs/GaAs光电阴极组件和金刚石薄膜阳极构成一个平板电容器，整个二极管为圆柱体结构。Referring to FIG. 1, a vacuum solar photoelectric conversion device includes a transmissive GaAlAs/GaAs photocathode assembly [1], an indium sealing material [2], a first Kovar alloy [3-1], and a second Kovar alloy [3] -2], the cylindrical ceramic cavity [4] and the diamond thin film anode [10], the transmissive GaAlAs/GaAs photocathode component is connected to the first Kovar alloy 3-1 through the indium sealing material 2, and the first Kovar alloy 3- 1 is connected to the second Kovar alloy 3-2 through a cylindrical ceramic cavity, and finally the second Kovar alloy 3-2 is connected to the diamond anode 10 through an indium sealing material 2. The first Kovar alloy 3-1 can serve as the pin of the transmissive GaAlAs/GaAs photocathode assembly 1, and the second Kovar alloy 3-2 can serve as the pin of the diamond thin film anode assembly; the transmissive GaAlAs/GaAs photocathode assembly 1 is From top to bottom, it is composed of Corning 7056 # glass window [5], antireflection layer [6], GaAlAs window layer [7], GaAs emission layer [8] and Cs/O activation layer [9]. The low work function diamond anode assembly is mainly composed of a diamond film layer [11], a Si substrate layer [12] and a Corning 7056 # glass window [13]. The first Kovar alloy 3-1 can serve as the pin of the transmissive GaAlAs/GaAs photocathode assembly 1, and the second Kovar alloy 3-2 can serve as the pin of the diamond thin film anode collecting electrons in the vacuum photoelectric conversion device, GaAlAs/GaAs The photocathode component and the diamond thin film anode form a flat capacitor, and the entire diode is a cylindrical structure.
进一步，所述Corning 7056#玻璃窗口总厚度在2～6mm之间。Further, the total thickness of the Corning 7056 # glass window is between 2 and 6 mm.
进一步，所述增透层总厚度在100～200nm之间。Further, the total thickness of the anti-reflection layer is between 100 and 200 nm.
进一步，所述GaAlAs缓冲层外延生长在增透层上，厚度为1～2um，Ga1-xAlxAs缓冲层的Al组分从增透层往GaAs发射层方向由最大0.6～0.9线性下降到0。Further, the GaAlAs buffer layer is epitaxially grown on the anti-reflection layer with a thickness of 1-2um, and the Al composition of the Ga1 -x Al x As buffer layer decreases linearly from the anti-reflection layer to the GaAs emission layer from a maximum of 0.6-0.9 to 0.
进一步，所述GaAs发射层的浓度掺杂按照指数掺杂形式分布，掺杂浓度范围同样控制在1.0×1019～1×1018cm-3之间。Further, the concentration doping of the GaAs emission layer is distributed in the form of exponential doping, and the doping concentration range is also controlled between 1.0×10 19 to 1×10 18 cm −3 .
进一步所述Cs/O激活层通过超高真空激活工艺紧密吸附在GaAs发射层的表面上，厚度在0.5～1.5nm之间。Further, the Cs/O activation layer is tightly adsorbed on the surface of the GaAs emitting layer through an ultra-high vacuum activation process, and the thickness is between 0.5 and 1.5 nm.
进一步，所述两极之间间距在2cm～5cm之间。Further, the distance between the two poles is between 2 cm and 5 cm.
进一步，所述金刚石薄膜阳极，首先通过电泳过程，使金刚石微粒沉积在硅衬底上，并用热丝CVD法形成金刚石膜，制备时控制衬底温度在850℃，灯丝在2100℃，压强为1500Pa，最后在表面形成非晶碳达到负电子亲和势，最终获得小于1.0eV的功函数，总厚度在2～4um之间。Further, for the diamond thin film anode, first, the diamond particles are deposited on the silicon substrate through the electrophoresis process, and the diamond film is formed by the hot filament CVD method. During preparation, the substrate temperature is controlled at 850°C, the filament is at 2100°C, and the pressure is 1500Pa , and finally, amorphous carbon is formed on the surface to achieve negative electron affinity, and finally a work function less than 1.0 eV is obtained, and the total thickness is between 2 and 4 μm.
结合图2，本发明的工作原理为：太阳光从透射式GaAlAs/GaAs阴极的衬底面入射，阴极材料吸收入射光子产生的光电子经过内部输运后到达阴极发射表面，由于阴极在光照下温度升高，部分光电子吸收热量可以获得足够的动能然后克服表面势垒逸出至真空，被低功函数的金刚石薄膜阳极收集并输出成为电能，从而使太阳能成功转化为电能。变组分变掺杂结构的GaAlAs/GaAs阴极可以通过内建电场加速电子的运动，金刚石膜由于其宽禁带宽度和低功函数可以有效收集阴极的出射电子，并提高两极之间的电势差，从而提高器件的转换效率。With reference to Figure 2, the working principle of the present invention is: sunlight is incident from the substrate surface of the transmissive GaAlAs/GaAs cathode, and the photoelectrons generated by the cathode material absorbing incident photons reach the cathode emission surface after internal transport. High, part of the photoelectrons absorb heat to obtain sufficient kinetic energy and then overcome the surface barrier to escape to the vacuum, which is collected by the low work function diamond thin film anode and output as electrical energy, so that the solar energy can be successfully converted into electrical energy. The GaAlAs/GaAs cathode with variable composition variable doping structure can accelerate the movement of electrons through the built-in electric field. Due to its wide band gap and low work function, the diamond film can effectively collect the outgoing electrons of the cathode and increase the potential difference between the two electrodes. Thus, the conversion efficiency of the device is improved.
结合图3，采用300～900nm范围内不同波长的光子入射到透射式GaAlAs/GaAs光电阴极上，经过阴极体内吸收、激发、输运等过程后，在表面发射出光电子，产生光电发射效应，同时利用TEC片加热阴极，使阴极的温度升高，提升光电发射效率。如图3所示，在对数坐标系中，水平坐标为波长，垂直坐标为量子效率。从图3可知，该透射式GaAlAs/GaAs光电阴极的量子效率曲线的响应范围在350～900nm之间，符合太阳能电池的宽光谱响应范围的要求，可以充分利用地球表面的太阳辐射。除此之外，我们发现当阴极的温度从20℃增大到60℃，相应的量子效率也有一定的提升，且我们发现长波段的量子效率受温度的影响较大，原因在于长波段的光子产生的低能电子较多，所以在加热条件下吸收热能可以增加动能，从而使发射光电子的数目增加。总的来说，该实验曲线证明了阴极温度的升高可以获得更高的光电发射效率，所以该真空太阳能光电转换器件可以获得较高的转换效率符合设计的初衷，这对于太阳能源的利用有着重要意义。Combined with Figure 3, photons with different wavelengths in the range of 300-900 nm are used to incident on the transmissive GaAlAs/GaAs photocathode. After absorption, excitation, and transportation in the cathode, photoelectrons are emitted on the surface, resulting in a photoemission effect. The cathode is heated by the TEC sheet, so that the temperature of the cathode is increased, and the photoelectric emission efficiency is improved. As shown in Figure 3, in the logarithmic coordinate system, the horizontal coordinate is the wavelength, and the vertical coordinate is the quantum efficiency. It can be seen from Figure 3 that the response range of the quantum efficiency curve of the transmissive GaAlAs/GaAs photocathode is between 350 and 900 nm, which meets the requirements of the wide spectral response range of solar cells and can make full use of the solar radiation on the earth's surface. In addition, we found that when the temperature of the cathode increased from 20 °C to 60 °C, the corresponding quantum efficiency also increased to a certain extent, and we found that the quantum efficiency of the long-band was greatly affected by temperature, because the photons in the long-band More low-energy electrons are produced, so absorbing thermal energy under heating conditions can increase kinetic energy, thereby increasing the number of emitted photoelectrons. In general, the experimental curve proves that the increase of the cathode temperature can obtain higher photoemission efficiency, so the vacuum solar photoelectric conversion device can obtain higher conversion efficiency, which is in line with the original intention of the design, which has a great effect on the utilization of solar energy. important meaning.
本发明的阳极材料可以为镍铝合金，功函数相对较高。替换上低功函数金刚石薄膜阳极即可完成该真空太阳能光电转换器件，获得较高的转化效率。The anode material of the present invention can be nickel-aluminum alloy, and the work function is relatively high. The vacuum solar photoelectric conversion device can be completed by replacing the low work function diamond thin film anode, and a higher conversion efficiency can be obtained.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710661892.3A CN107507873B (en) | 2017-08-04 | 2017-08-04 | A kind of vacuous solar energy electrooptical device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710661892.3A CN107507873B (en) | 2017-08-04 | 2017-08-04 | A kind of vacuous solar energy electrooptical device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107507873A CN107507873A (en) | 2017-12-22 |
| CN107507873B true CN107507873B (en) | 2019-06-25 |
Family
ID=60689525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710661892.3A Expired - Fee Related CN107507873B (en) | 2017-08-04 | 2017-08-04 | A kind of vacuous solar energy electrooptical device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107507873B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109859998B (en) * | 2018-12-14 | 2024-03-15 | 中国电子科技集团公司第十二研究所 | Solar energy conversion device |
| CN109801820B (en) * | 2018-12-26 | 2021-05-07 | 南京理工大学 | Multilayer cascade type wide spectral response photoelectric cathode and preparation method thereof |
| CN110379866B (en) * | 2019-06-27 | 2021-04-06 | 南京理工大学 | Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1386317A (en) * | 2000-08-07 | 2002-12-18 | 赤松则男 | Solar ray energy conversion apparatus |
| CN201204175Y (en) * | 2007-12-28 | 2009-03-04 | 中国航天科技集团公司第五研究院第五一〇研究所 | A kind of diamond thin film solar cell |
| CN101471214A (en) * | 2007-12-28 | 2009-07-01 | 中国航天科技集团公司第五研究院第五一〇研究所 | Diamond thin-film solar cell and method for producing the same |
| CN104871287A (en) * | 2012-07-30 | 2015-08-26 | 马克思-普朗克科学促进协会 | Device and method for thermoelectronic energy conversion |
-
2017
- 2017-08-04 CN CN201710661892.3A patent/CN107507873B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1386317A (en) * | 2000-08-07 | 2002-12-18 | 赤松则男 | Solar ray energy conversion apparatus |
| CN201204175Y (en) * | 2007-12-28 | 2009-03-04 | 中国航天科技集团公司第五研究院第五一〇研究所 | A kind of diamond thin film solar cell |
| CN101471214A (en) * | 2007-12-28 | 2009-07-01 | 中国航天科技集团公司第五研究院第五一〇研究所 | Diamond thin-film solar cell and method for producing the same |
| CN104871287A (en) * | 2012-07-30 | 2015-08-26 | 马克思-普朗克科学促进协会 | Device and method for thermoelectronic energy conversion |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107507873A (en) | 2017-12-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105810772B (en) | A kind of antimony trisulfide/silicon stacked solar cell, cascade solar cell and preparation method thereof | |
| US8686283B2 (en) | Solar cell with oxide tunneling junctions | |
| CN101789462B (en) | A kind of broad-spectrum absorption black silicon solar cell structure and its manufacturing method | |
| KR101220304B1 (en) | Up conversion oxide fluorescent composition for solar cell and method of fabrication of high efficiency solar cell using thereof | |
| CN102544195B (en) | Solar cell and manufacturing method thereof | |
| CN102184999A (en) | NPN-structure-based laser photovoltaic cell and preparation process thereof | |
| CN104659137B (en) | Full-solid photon enhanced thermionic emission device | |
| CN107507873B (en) | A kind of vacuous solar energy electrooptical device | |
| CN110444313A (en) | One kind radiating volta effect nuclear battery based on silicon carbide PN junction β | |
| CN204315606U (en) | Double heterojunction double-sided solar battery | |
| CN211150576U (en) | High-temperature solar photoelectric conversion structure based on photon-enhanced thermionic emission | |
| KR101252815B1 (en) | Down conversion oxide fluorescent composition for solar cell and method of fabrication of high efficiency solar cell using thereof | |
| Zheng et al. | Inner-cascaded photovoltaic-thermionic-thermoradiative conversion for concentrated solar power | |
| CN107393804A (en) | A kind of vacuous solar energy electrooptical device | |
| Bellucci et al. | Defect engineering of diamond cathodes for high temperature solar cells | |
| CN211404511U (en) | All-solid-state photon enhanced thermionic emission photoelectric conversion device with nano spacer layer | |
| US12125926B2 (en) | Semiconductor device and solar cell and production method for semiconductor device | |
| CN107731934A (en) | A kind of optical-electrical converter and its conversion method | |
| CN110379866B (en) | Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode | |
| CN110854231B (en) | A high-temperature solar photovoltaic conversion structure based on photon-enhanced thermionic emission | |
| CN106298983A (en) | A crystalline silicon solar cell based on Si/NiOx heterojunction | |
| CN102117849B (en) | Solar cell element and its device | |
| CN106611805A (en) | Photovoltaic device and preparation method thereof, multi-junction GaAs laminated laser photovoltaic cell | |
| CN206148438U (en) | Crystalline silicon solar cell based on siNiOx heterojunction | |
| CN217955889U (en) | Laminated battery for improving current-carrying output |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190625 Termination date: 20210804 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |