CN110379866B - Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode - Google Patents
Solar cell based on vacuum separation type p-n junction n-type variable doping GaN-based anode Download PDFInfo
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- 238000000926 separation method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 7
- 238000001994 activation Methods 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 238000009377 nuclear transmutation Methods 0.000 claims 3
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 239000010405 anode material Substances 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
本发明提供了基于真空分离式p‑n结n型变掺杂GaN基阳极的太阳能电池，包括GaAs光电阴极、真空腔和阳极，所述阳极采用GaN基材料，所述阳极从最表层到靠近真空腔依次为衬底层、AlN缓冲层、n型变掺杂GaN接收层，其中AlN缓冲层生长在衬底层上；n型变掺杂GaN基接收层生长在AlN缓冲层上。本发明采用n型变掺杂GaN基接收层，在阳极内部形成一个内建电场，增大了电子在阳极内部的输运速率，提高了电子收集能力，抑制阳极材料的噪声电流，实现的真空分离式p‑n结太阳能电池较高的能量转换。
The invention provides a solar cell based on a vacuum-separated p-n junction n-type variable-doped GaN-based anode, including a GaAs photocathode, a vacuum cavity and an anode, the anode is made of GaN-based material, and the anode is from the outermost layer to the close The vacuum chamber consists of a substrate layer, an AlN buffer layer, and an n-type variable-doped GaN receiving layer in sequence, wherein the AlN buffer layer is grown on the substrate layer; the n-type variable-doped GaN base receiving layer is grown on the AlN buffer layer. The invention adopts an n-type variable-doped GaN-based receiving layer, forms a built-in electric field inside the anode, increases the electron transport rate inside the anode, improves the electron collection ability, suppresses the noise current of the anode material, and realizes a vacuum Higher energy conversion in split p‑n junction solar cells.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to an n-type GaN-based anode solar cell based on a vacuum separation type p-n junction.
Background
Photovoltaic power generation utilizes the photon effect of short-wave photons of solar radiation to excite electrons in materials so as to realize photoelectric conversion. In 2010, the U.S. Stanford university J.W.Schwede et al proposed a "Photon Enhanced Thermionic Emission (PETE)" solar cell technology, overcoming the disadvantage of the traditional photovoltaic power generation technology that efficiency decreases with increasing temperature, and achieving energy conversion at higher temperatures. The PETE solar cell device adopts a cathode and anode separated structure, the cathode absorbs solar radiation to emit electrons, and the electrons are received by the anode to form current so as to complete photoelectric conversion. The current research on PETE batteries mainly focuses on the photoelectric conversion efficiency of a photocathode, and the research on anodes is limited to phosphorus-doped diamond. The phosphorus-doped diamond anode has the defects of complex manufacturing process, low electron collection efficiency and the like, and the energy conversion efficiency of the solar cell adopting the phosphorus-doped diamond is not high.
Disclosure of Invention
The invention aims to provide a solar cell based on a vacuum separation type p-n junction n-type variable doping GaN-based anode so as to improve the energy conversion efficiency of the solar cell.
The technical scheme for realizing the purpose of the invention is as follows: a solar cell based on a vacuum separation type p-n junction n-type variable doping GaN-based anode comprises a GaAs photocathode, a vacuum cavity and an anode, and is characterized in that the anode is made of a GaN-based material, and a substrate layer, an AlN buffer layer and an n-type variable doping GaN receiving layer are sequentially arranged on the anode from the top layer to the position close to the vacuum cavity.
Preferably, the substrate layer is a sapphire substrate.
Preferably, the AlN buffer layer is grown on the substrate layer to a thickness of 50-75 nm.
Preferably, the n-type variable doping GaN-based receiving layer grows on the AlN buffer layer by MOCVD method, the thickness is 200-300nm, and the doping concentration range is 1 × 1018-1×1019cm3The doping concentration decreases from near the AlN buffer layer to the outermost surface.
Preferably, the n-type variable doping GaN-based receiving layer comprises 4 layers from the position close to the AlN buffer layer to the outermost surface, the thickness of the first layer is 50-75nm, the doping concentration is 1 multiplied by 1019cm-3(ii) a The second layer has a thickness of 50-75nm and a doping concentration of 5 × 1018cm-3(ii) a The thickness of the third layer is 50-75nm, and the doping concentration is 2.5 × 1018cm-3(ii) a The thickness of the fourth layer is 50-75nm, and the doping concentrationIs 1 × 1018cm-3。
Preferably, the surface of the n-type variable doping GaN-based receiving layer is treated by adopting an ultrahigh vacuum activation process.
Compared with the prior art, the invention has the following advantages: 1) the n-type GaN-based material adopts a heavy doping technology to ensure that the Fermi level is close to the bottom of the conduction band; 2) the n-type GaN-based anode structure disclosed by the invention is based on a semiconductor material doping technology and an ultrahigh vacuum surface activation technology, realizes a low electron affinity n-type variable doping GaN-based anode structure, obtains a GaN-based anode structure with low work function, high electron transport efficiency and high electron collection efficiency, and realizes higher energy conversion efficiency of a solar cell; 3) the n-type GaN-based material provided by the invention has a simple preparation process, the work function of the anode is effectively reduced, and the higher energy conversion efficiency of the PETE solar cell is realized; 4) the invention adopts the variable doping technology, and a built-in electric field is formed inside the anode, thereby improving the transport efficiency of electrons inside the anode and inhibiting the noise current of the n-type GaN-based material.
Drawings
FIG. 1 is a schematic structural view of an n-type metamorphic doped GaN-based anode.
Fig. 2 is a graph of energy conversion efficiency for different anode material work functions.
Detailed Description
As shown in figure 1, the n-type variable doping GaN-based anode solar cell based on the vacuum separation type p-n junction comprises a GaAs photocathode, a vacuum cavity and an anode, wherein the anode is made of a GaN-based material, and the anode sequentially comprises a substrate layer 1, an AlN buffer layer 2 and an n-type variable doping GaN receiving layer 3 from the top layer to the position close to the vacuum cavity.
The GaAs photoelectric cathode is connected with the GaN anode by adopting a cylindrical ceramic cavity, sealing treatment is carried out by an indium sealing material, and a vacuum cavity is formed between the GaAs photoelectric cathode and the GaN anode, so that the vacuum separation type p-n junction solar cell is formed.
The substrate layer 1 is a sapphire substrate, and the AlN buffer layer 2 grows on the upper surface of the sapphire substrate in an MOCVD mode and has the thickness of 50-75 nm.
The n-type variable doped GaN-based junctionThe cladding layer 3 is grown on the AlN buffer layer 2 by MOCVD method with a thickness of 200-300nm and a doping concentration range of 1 × 1018-1×1019cm3The doping concentration decreases from near the AlN buffer layer 2 toward the outermost surface.
In some embodiments, the n-type variation doped GaN-based receiving layer 3 includes 4 layers from the vicinity of the AlN buffer layer 2 to the outermost surface, the first layer having a thickness of 50 to 75nm and a doping concentration of 1X 1019cm-3(ii) a The second layer has a thickness of 50-75nm and a doping concentration of 5 × 1018cm-3(ii) a The thickness of the third layer is 50-75nm, and the doping concentration is 2.5 × 1018cm-3(ii) a The thickness of the fourth layer is 50-75nm, and the doping concentration is 1 × 1018cm-3。
And activating the surface of the n-type variable doping GaN receiving layer 3 by utilizing an ultrahigh vacuum activation process to obtain the n-type GaN-based receiving layer 3 with low electron affinity.
Due to the difference of the doping concentration of the GaN-based material, a built-in electric field pointing from outside to inside is formed inside the anode, and the built-in electric field is favorable for improving the transport rate of carriers inside the anode, enhancing the electron collection efficiency of the anode and inhibiting the noise current of the n-type GaN-based material.
The GaN-based anode with low electron affinity is obtained through surface activation treatment, the work function of the GaN-based anode is reduced, the output voltage of the solar cell is increased, and the energy conversion efficiency of the solar cell is improved.
As shown in fig. 2, a schematic diagram of energy conversion efficiency of an n-type variable doped GaN-based anode solar cell based on a vacuum separation type p-n junction under different anode work function conditions is shown, and the energy conversion efficiency is higher as the anode work function is reduced. The n-type variable doped GaN-based anode material provided by the invention is subjected to an ultra-vacuum activation process to obtain the n-type GaN-based receiving layer with low electron affinity, so that the work function of the anode material is reduced, and the energy conversion efficiency of the solar cell is improved.
Examples
A vacuum separation type p-n junction based n-type variable doping GaN-based anode solar cell comprises a GaAs photocathode, a vacuum cavity and an anode, wherein the anode is made of a GaN-based material, and the anode is made of a GaN-based materialThe anode comprises a substrate layer 1, an AlN buffer layer 2 and an n-type variable doping GaN receiving layer 3 from outside to inside in sequence. The substrate layer 1 is a sapphire substrate, the AlN buffer layer 2 grows on the upper surface of the sapphire substrate in an MOCVD mode and has the thickness of 50nm, the n-type variable doping GaN receiving layer 3 grows on the AlN buffer layer 2 in an MOCAD mode and has the thickness of 200nm, the n-type variable doping GaN-based receiving layer 3 comprises 4 layers, the first layer has the thickness of 50nm, the doping concentration is 1 multiplied by 1019cm-3(ii) a The second layer has a thickness of 50nm and a doping concentration of 5 × 1018cm-3(ii) a The thickness of the third layer is 50nm, and the doping concentration is 2.5 multiplied by 1018cm-3(ii) a The thickness of the fourth layer is 50nm, and the doping concentration is 1 multiplied by 1018cm-3。
Claims (4)
1. A solar cell based on a vacuum separation type p-n junction n-type variable doping GaN-based anode comprises a GaAs photocathode, a vacuum cavity and an anode, and is characterized in that the anode is made of a GaN-based material, and the anode sequentially comprises a substrate layer (1), an AlN buffer layer (2) and an n-type variable doping GaN receiving layer (3) from the top layer to the position close to the vacuum cavity;
the n-type variable doping GaN-based receiving layer (3) grows on the AlN buffer layer (2) by an MOCVD method, the thickness is 200-300nm, and the doping concentration range is 1 multiplied by 1018-1×1019cm3The doping concentration decreases from near the AlN buffer layer (2) to the outermost surface;
the n-type variable doping GaN-based receiving layer (3) comprises 4 layers from the position close to the AlN buffer layer (2) to the outermost surface, the thickness of the first layer is 50-75nm, and the doping concentration is 1 multiplied by 1019cm-3(ii) a The second layer has a thickness of 50-75nm and a doping concentration of 5 × 1018cm-3(ii) a The thickness of the third layer is 50-75nm, and the doping concentration is 2.5 × 1018cm-3(ii) a The thickness of the fourth layer is 50-75nm, and the doping concentration is 1 × 1018cm-3。
2. Solar cell based on vacuum separated p-n junction n-type metamorphic doped GaN based anode according to claim 1 characterized by that the substrate layer (1) is sapphire substrate.
3. Solar cell based on vacuum separated p-n junction n-type transmutation doped GaN based anode according to claim 1 characterized in that the AlN buffer layer (2) is grown on the substrate layer (1) with a thickness of 50-75 nm.
4. The solar cell based on the vacuum separation type p-n junction n-type transmutation doped GaN-based anode according to claim 1, characterized in that the surface of the n-type transmutation doped GaN-based receiving layer (3) is treated by an ultra-high vacuum activation process.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182307A1 (en) * | 1999-02-18 | 2002-12-05 | City University Of Hong Kong | Organic electroluminescent devices with organic layers deposited at elevated substrate temperatures |
| CN101866976A (en) * | 2010-05-21 | 2010-10-20 | 重庆大学 | Transmissive GaN ultraviolet photocathode based on variable doping structure and manufacturing method |
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| CN107507873A (en) * | 2017-08-04 | 2017-12-22 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
| CN108630510A (en) * | 2018-05-21 | 2018-10-09 | 南京理工大学 | Varying doping GaN nano wire array photoelectric cathode and preparation method thereof |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020182307A1 (en) * | 1999-02-18 | 2002-12-05 | City University Of Hong Kong | Organic electroluminescent devices with organic layers deposited at elevated substrate temperatures |
| CN101866976A (en) * | 2010-05-21 | 2010-10-20 | 重庆大学 | Transmissive GaN ultraviolet photocathode based on variable doping structure and manufacturing method |
| CN102064206A (en) * | 2010-11-30 | 2011-05-18 | 南京理工大学 | Multi-component gradient-doping GaN UV (Ultraviolet) light cathode material structure and manufacture method thereof |
| CN107507873A (en) * | 2017-08-04 | 2017-12-22 | 南京理工大学 | A kind of vacuous solar energy electrooptical device |
| CN108630510A (en) * | 2018-05-21 | 2018-10-09 | 南京理工大学 | Varying doping GaN nano wire array photoelectric cathode and preparation method thereof |
| CN109166878A (en) * | 2018-09-29 | 2019-01-08 | 华南理工大学 | Nano-pore LED array chip and preparation method thereof with anti-reflection passivation layer |
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