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CN101351076B - 等离子体处理设备 - Google Patents

等离子体处理设备 Download PDF

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CN101351076B
CN101351076B CN2008102224213A CN200810222421A CN101351076B CN 101351076 B CN101351076 B CN 101351076B CN 2008102224213 A CN2008102224213 A CN 2008102224213A CN 200810222421 A CN200810222421 A CN 200810222421A CN 101351076 B CN101351076 B CN 101351076B
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support device
cantilever support
shell body
processing plasma
reaction chamber
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CN101351076A (zh
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张风港
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Priority to KR1020117008379A priority patent/KR101203619B1/ko
Priority to PCT/CN2009/073714 priority patent/WO2010031307A1/zh
Priority to US13/119,106 priority patent/US9728379B2/en
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    • HELECTRICITY
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    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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Abstract

本发明公开了一种等离子体处理设备,包括内部具有反应腔室的外壳体、设于所述反应腔室中的下电极以及贯穿所述外壳体并支撑所述下电极的悬臂支撑装置;所述悬臂支撑装置枢装于所述外壳体的侧壁且能够在所述外壳体中自转;所述等离子体处理设备进一步包括定位装置,以便可选择地固定所述悬臂支撑装置与所述外壳体的相对位置。本发明所提供的等离子体处理设备省略了将所述下电极自所述反应腔室中取出这一步骤,而该步骤的存在正是现有的等离子体处理设备维护作业过程较为复杂的一个重要原因;因此,本发明所提供的等离子体处理设备显著简化了维护操作,并节省了维护成本以及维护时间,等离子体处理设备的使用效率也得到了显著提高。

Description

等离子体处理设备
技术领域
本发明涉及微电子技术领域,特别涉及一种利用等离子体进行加工的等离子体处理设备。
背景技术
等离子体处理设备已被广泛地应用于微电子技术领域。
请参考图1,图1为一种等离子体处理设备的结构示意图。
等离子体处理设备通常具有外壳体(图中未添加附图标记),外壳体中形成反应腔室30,反应腔室30的顶部具有顶盖(图中未示出),其底部设有真空泵10。所述外壳体的侧壁具有通常呈方形的开口,悬臂支撑装置90自该开口插入,并与所述外壳体固定连接,同时将所述开口封闭。悬臂支撑装置90位于反应腔室30中的部分为连接臂80,连接臂80的末端安装有下电极70,下电极70的顶部具有支撑件(图中未添加附图标记),用以支撑加工件;下电极70的底部具有可拆装的盖板12。当然,等离子体处理设备1也可以具有其他具体结构形式。
可以通过传送口16向下电极70顶部的支撑件上送入加工件,并通过真空泵10在反应腔室12中制造并维持接近真空的状态。在此状态下,通过气体分配装置(图中未示出)向反应腔室30中均匀地输入气体,并向反应腔室30中输入适当的射频,以激活所述气体,进而在加工件的表面产生并维持等离子体环境。由于具有强烈的刻蚀以及淀积能力,所述等离子体可以与所述加工件发生刻蚀或者淀积等物理化学反应,以获得所需要的刻蚀图形或者淀积层。上述物理化学反应的副产物由真空泵10从反应腔室30的底部的开口20抽出。
工作适当的时间后需要对下电极70进行维护作业,此时可以将悬臂支撑装置90以及下电极70作为一个整体从所述外壳体侧壁的开口中取出,然后将下电极70底部的盖板12拆下,从而可以对下电极70内腔中的相关部件进行维护。维护操作结束后,需要将盖板12安装于下电极70的底部,并重新将悬臂支撑装置90以及下电极70从所述外壳体侧壁的开口装入,这样方可使等离子体处理设备重新投入工作。
显然,上述维护作业过程涉及多次拆装操作,特别是需要将下电极70从反应腔室30中取出,这使维护作业较为复杂,费时费力。另一方面,等离子体处理设备工作过程中的维护作业较为频繁,这样整个设备总的待机维护较长,设备的使用效率较低。因此,上述等离子体处理设备的维护成本较高、使用效率较低;如何简化等离子体处理设备的维护作业过程进而节省维护成本、提高设备使用效率是本领域的技术人员目前需要解决的技术问题。
发明内容
本发明的目的是提供一种等离子体处理设备,其维护作业过程较为简单,从而可以节省维护成本,并可以显著提高等离子体处理设备的使用效率。
为解决上述技术问题,本发明提供一种等离子体处理设备,包括内部具有反应腔室的外壳体、设于所述反应腔室中的下电极,以及横向贯穿所述外壳体侧壁的悬臂支撑装置;所述悬臂支撑装置的内端位于所述反应腔室中并支撑所述下电极;所述悬臂支撑装置枢装于所述外壳体的侧壁;所述等离子体处理设备进一步包括定位装置,以便可选择地固定所述悬臂支撑装置与所述外壳体的相对位置。
进一步,所述定位装置包括固定安装于所述悬臂支撑装置外端的凸缘部,所述凸缘部与所述外壳体分别设有相配合的定位销和销孔。
进一步,所述悬臂支撑装置通过轴承枢装于所述外壳体的侧壁。
进一步,所述悬臂支撑装置与所述外壳体之间设置密封部件。
进一步,所述外壳体的侧壁具有阶梯面朝向外侧的圆形阶梯孔,所述轴承设于所述圆形阶梯孔中;所述密封部件具体为密封圈,且设置于所述悬臂支撑装置与所述圆形阶梯孔的阶梯面之间。
进一步,所述轴承为磁流体密封轴承。
进一步,所述悬臂支撑装置位于所述反应腔室中的部分的横截面为圆形。
进一步,所述悬臂支撑装置位于所述反应腔室中的部分的横截面大体为椭圆形,处于正常工作状态时所述椭圆形的长轴大体竖直延伸。
进一步,所述下电极悬臂支撑装置的内部具有沿其轴向延伸的空腔,且该空腔连通所述下电极的内腔。
本发明所提供的等离子体处理设备,其悬臂支撑装置枢装于其外壳体的侧壁上,所述悬臂支撑装置因此能够在所述外壳体中自转;这样,与所述悬臂支撑装置固定连接的下电极能够随之在反应腔室中绕大体水平的转轴自转。当需要对下电极进行维护作业时,首先操纵定位装置以解除所述悬臂支撑装置与所述外壳体的固定关系,然后转动所述悬臂支撑装置约180度,所述下电极显然也将绕上述转轴旋转180度;接着通过定位装置重新将所述悬臂支撑装置与所述外壳体的相对位置固定。此时,所述下电极的底盖将大体竖直向上,除去所述下电极底盖以及反应腔室顶部的相关部件后即可从上方对所述下电极内腔中的相关部件进行维护操作。维护作业结束后进行相反的操作,即可以使所述下电极再旋转180度并回到正常工作位置,等离子体处理设备可以迅速恢复正常工作状态。在维护作业中,本发明所提供的等离立体处理设备省略了将所述下电极自所述反应腔室中取出这一步骤,而该步骤的存在正是现有的等离子体处理设备维护作业过程较为复杂的一个重要原因;因此,本发明所提供的等离子体处理设备显著简化了维护操作,并节省了维护成本以及维护时间,等离子体处理设备的使用效率也得到了显著提高。
附图说明
图1为一种等离子体处理设备的结构示意图;
图2为本发明所提供外壳体一种具体实施方式的结构示意图;
图3为本发明所提供悬臂支撑装置一种具体实施方式的结构示意图;
图4为本发明所提供等离子体处理设备一种具体实施方式剖视示意图;
图5为图4所示等离子体处理设备的悬臂支撑装置与外壳体处于固定连接关系解除状态的剖视示意图;
图6为图4所示等离子体处理设备处于下电极维护状态的剖视示意图;
图7为本发明所提供等离子体处理设备一种具体实施方式中气体流向示意图;
图8为本发明所提供等离子体处理设备另一种具体实施方式中气体流向示意图。
具体实施方式
本发明的核心是提供一种等离子体处理设备,其维护作业过程较为简单,从而可以节省维护成本,并可以显著提高等离子体处理设备的使用效率。
为了使本技术领域的人员更好地理解本发明方案,下面结合附图和具体实施方式对本发明作进一步的详细说明。
请参考图2、图3以及图4,图2为本发明所提供外壳体一种具体实施方式的结构示意图;图3为本发明所提供悬臂支撑装置一种具体实施方式的结构示意图;图4为本发明所提供等离子体处理设备一种具体实施方式剖视示意图。
在一种具体实施方式中,本发明所提供的等离子体处理设备5(示于图4中)包括外壳体51;外壳体51的内部具有反应腔室52,反应腔室52的顶部具有顶壁(例如介质窗,图中未示出),射频能量通过该顶壁耦合入反应腔室52中,气体也可以自该顶壁进入反应腔室52中。外壳体51中还具有传送口511,加工件通过传送口511进、出反应腔室52。外壳体51的底部具有出口515,反应腔室52中物理化学反应的副产物自出口515中抽出。
外壳体51具有将其侧壁贯穿的横截面大体为圆形的通孔,该通孔可以是阶梯孔,当然也可以是常规的通孔。如图2所示,所述阶梯孔的环形阶梯面512朝向外壳体51的外侧,显然,所述阶梯孔的环形内壁513位于阶梯面512外侧。
悬臂支撑装置53横向贯穿外壳体51的侧壁,例如,悬臂支撑装置53可以插装入外壳体51的上述通孔中;悬臂支撑装置53还应枢装于外壳体51的侧壁,即悬臂支撑装置53应当能够在外壳体51中自转,自转的角度通常不小于180度。
可以通过多种具体方式将悬臂支撑装置53枢装于外壳体51中,其中一种较为简便且可靠的方式是在悬臂支撑装置53与外壳体51的通孔之间设置轴承54(示于图4中)。
如图3所示,悬臂支撑装置53可以具有圆轴面533,轴承54的内圈可以套装于圆轴面533外侧,轴承54的外圈可以安装于所述阶梯孔的环形内壁513之中。轴承54的内圈与圆轴面533之间或者轴承54的外圈与所述阶梯孔的环形内壁513之间可以略微松动,从而使悬臂支撑装置53可以沿其轴向相对于外壳体51产生适当的位移。
为了确保悬臂支撑装置53与外壳体51之间的密封性,可以进一步在两者之间设置密封装置,例如密封垫圈。
在外壳体51侧壁的通孔为阶梯孔的情况下,悬臂支撑装置53的圆轴面533的内侧可以设置环形的台阶面534,处于装配状态时台阶面534朝向外壳体51内侧,且其外径大于所述阶梯孔的阶梯面512的内径。此时,可以将上述密封装置设置在悬臂支撑装置53的台阶面534与所述阶梯孔的阶梯面512之间,这样可以将轴承54可靠地隔离于等离子体环境之外,从而避免轴承54受到腐蚀,显著延长轴承54的寿命。
轴承54可以进一步是磁流体密封轴承,此时可以将上述密封装置省略,从而简化了结构。
悬臂支撑装置53位于反应腔室52中的部分为连接臂532,连接臂532的末端固定连接有下电极,如图4所示,下电极包括盒体552、位于盒体552顶部的支撑件551(用于支撑加工件)以及位于盒体552底部的盖板553。因此,悬臂支撑装置53以及所述下电极的位置由外壳体51的侧壁可旋转地支撑。为了使连接臂532能够更为可靠地连接所述下电极,连接臂532的端面537(示于图3中)可以具有与所述下电极外壁相适应的曲率。
此外,悬臂支撑装置53的内部可以具有沿其轴向延伸的中心空腔531,中心空腔531可以作为所述下电极的电气线路、冷却水路以及射频线路等通向外部的通道。
为了能够可选择地固定悬臂支撑装置53与外壳体51的相对位置,本发明所提供的等离子体处理设备进一步包括定位装置。所述定位装置的具体形式可以有多种;如图3所示,所述定位装置具体可以包括固定安装于悬臂支撑装置53外端(位于外壳体51之外的端部)的凸缘部535,凸缘部535与外壳体51侧壁的相应位置之间分别对应地设置定位销514(示于图2中)和销孔536。当然,定位销514也可以设于凸缘部535上,销孔536也可以开设于外壳体51中。
正常工作状态下悬臂支撑装置53与外壳体51的相对位置固定,等离子体处理设备所处的状态如图4所示,此时定位销514位于销孔536中,悬臂支撑装置53不能转动。
进行维护作业时需要转动悬臂支撑装置53,可以自外壳体51中将悬臂支撑装置53拉出距离D,使定位销514脱离销孔536,此时等离子体处理设备5处于图5所示的状态。定位销514脱离销孔536后悬臂支撑装置53即可以转动,因此所述下电极将随之转动。
当所述下电极随悬臂支撑装置53旋转大约180度时,将悬臂支撑装置53向外壳体51内推入距离D,此时定位销514可以重新进入销孔536中,悬臂支撑装置53与外壳体51的相对位置将重新得到固定,等离子体处理设备5此时所处的状态如图6所示。在图6所示状态下,所述下电极的支撑件551位于盒体552的底部,所述下电极的盖板553(图6中已被拆除)位于盒体552的顶部。拆除盖板553以及反应腔室52顶部的相关部件后操作人员即可自上方对所述下电极内腔中的相关部件进行维护操作。
主要维护作业执行完毕后,可以重新安装盖板553以及反应腔室52顶部的相关部件,然后再次自外壳体51中将悬臂支撑装置53拉出距离D,使定位销514脱离销孔536,等离子体处理设备5将重新处于图5所示的状态。旋转180度后通过定位销514以及销孔536将悬臂支撑装置53与外壳体51的相对位置固定,此时等离子体处理设备5恢复图4所示的正常工作状态,此时整个维护作业完成。
在上述维护作业中,等离子体处理设备5省略了将所述下电极自反应腔室52中取出这一步骤,而该步骤的存在正是现有的等离子体处理设备维护作业过程较为复杂的一个重要原因;因此,本发明所提供的等离立体处理设备显著简化了维护操作,并节省了维护成本以及维护时间,等离子体处理设备的使用效率也得到了显著提高。
请参考图7以及图8,图7为本发明所提供等离子体处理设备一种具体实施方式中气体流向示意图;图8为本发明所提供等离子体处理设备另一种具体实施方式中气体流向示意图。两图中带箭头的虚线示意性地表示气体的流动方向。
众所周知,反应腔室52内气体分布的均匀性直接影响着等离子体分布的均匀性,而后者是关系到加工件表面处理均匀性的关键因素;随着加工件尺寸的不断增大以及关键尺寸的不断减小,反应腔室52内气体分布的均匀性显得更为重要。
由于气体通常是自反应腔室32的顶部进入,因此悬臂支撑装置53的连接臂532的存在将在一定程度上对气体在反应腔室32各径向上的均匀度产生不利影响;虽然该不利影响难以从根本上消除,但是,可以采取措施尽量将其降低。
为了保证具有足够的空间使所述下电极的电气线路、冷却水路以及射频线路等顺利经由连接臂532的内腔连接外部,连接臂532的横截面积不能过小,但可以改进悬臂支撑装置53位于反应腔室52内的连接臂532的横截面形状。例如,可以尽量减小连接臂532的尺寸,并将其横截面形状设为圆形(图7)。与现有的大体为方形的横截面相比,圆形横截面可以显著减少对自其两侧向下流动的气体的干扰,进而降低反应腔室32各径向上气体分布的不均匀度。
如图8所示,还可以进一步将连接臂532的横截面形状设为椭圆形,且处于正常工作状态时,该椭圆形的长轴大体在竖直方向上延伸;连接臂532的宽度是对气体产生干扰的主要因素,将连接臂532的横截面形状设为椭圆形可以显著减小其宽度,同时又能够提供足够大的内部空间,因此可以进一步降低反应腔室32各径向上气体分布的不均匀度。
以上对本发明所提供的等离子体处理设备进行了详细介绍。本文中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以对本发明进行若干改进和修饰,这些改进和修饰也落入本发明权利要求的保护范围内。

Claims (9)

1.一种等离子体处理设备,包括内部具有反应腔室的外壳体、设于所述反应腔室中的下电极,以及横向贯穿所述外壳体侧壁的悬臂支撑装置;所述悬臂支撑装置的内端位于所述反应腔室中并支撑所述下电极;其特征在于,所述悬臂支撑装置枢装于所述外壳体的侧壁;所述等离子体处理设备进一步包括定位装置,以便可选择地固定所述悬臂支撑装置与所述外壳体的相对位置。
2.如权利要求1所述的等离子体处理设备,其特征在于,所述定位装置包括固定安装于所述悬臂支撑装置外端的凸缘部,所述凸缘部与所述外壳体分别设有相配合的定位销和销孔。
3.如权利要求1所述的等离子体处理设备,其特征在于,所述悬臂支撑装置通过轴承枢装于所述外壳体的侧壁。
4.如权利要求3所述的等离子体处理设备,其特征在于,所述悬臂支撑装置与所述外壳体之间设置密封部件。
5.如权利要求4所述的等离子体处理设备,其特征在于,所述外壳体的侧壁具有阶梯面朝向外侧的圆形阶梯孔,所述轴承设于所述圆形阶梯孔中;所述密封部件具体为密封圈,且设置于所述悬臂支撑装置与所述圆形阶梯孔的阶梯面之间。
6.如权利要求3所述的等离子体处理设备,其特征在于,所述轴承为磁流体密封轴承。
7.如权利要求1所述的等离子体处理设备,其特征在于,所述悬臂支撑装置位于所述反应腔室中的部分的横截面为圆形。
8.如权利要求1所述的等离子体处理设备,其特征在于,所述悬臂支撑装置位于所述反应腔室中的部分的横截面大体为椭圆形,处于正常工作状态时所述椭圆形的长轴大体竖直延伸。
9.如权利要求1所述的等离子体处理设备,其特征在于,所述下电极悬臂支撑装置的内部具有沿其轴向延伸的空腔,且该空腔连通所述下电极的内腔。
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Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101351076B (zh) * 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
CN106971956A (zh) * 2017-05-19 2017-07-21 江苏鲁汶仪器有限公司 刻蚀终点检测设备固定装置
CN109526181A (zh) * 2017-09-18 2019-03-26 湖南中车特种电气装备有限公司 一种多电机控制器及控制设备
CN107622943A (zh) * 2017-10-13 2018-01-23 德淮半导体有限公司 半导体刻蚀机台
JP6921796B2 (ja) * 2018-09-28 2021-08-18 芝浦メカトロニクス株式会社 プラズマ処理装置
JP6833784B2 (ja) * 2018-09-28 2021-02-24 芝浦メカトロニクス株式会社 プラズマ処理装置
CN112509901B (zh) 2020-11-19 2022-03-22 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
US20220359164A1 (en) * 2021-05-07 2022-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Cantilever with etch chamber flow design
CN114121584B (zh) * 2021-11-22 2024-04-16 北京北方华创微电子装备有限公司 下电极组件、半导体加工设备及下电极防冷凝方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997047028A1 (en) * 1996-06-05 1997-12-11 Lam Research Corporation High flown vacuum chamber including equipment modules such as plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
CN1225747A (zh) * 1996-06-05 1999-08-11 兰姆研究公司 包括设备组件例如等离子发生源、真空泵送设备和/或悬臂基片支承件的通用真空室
US6700089B1 (en) * 1999-03-30 2004-03-02 Tokyo Electron Limited Plasma processing device, its maintenance method, and its installation method
WO2009152259A2 (en) * 2008-06-10 2009-12-17 Lam Research Corporation Plasma processing systems with mechanisms for controlling temperatures of components

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5950275A (ja) * 1982-09-16 1984-03-23 Rigaku Keisoku Kk 磁性流体軸封装置
US4553069A (en) * 1984-01-05 1985-11-12 General Ionex Corporation Wafer holding apparatus for ion implantation
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US4951601A (en) * 1986-12-19 1990-08-28 Applied Materials, Inc. Multi-chamber integrated process system
DE3803411A1 (de) * 1988-02-05 1989-08-17 Leybold Ag Vorrichtung zur halterung von werkstuecken
DE4305748A1 (de) * 1993-02-25 1994-09-01 Leybold Ag Vorrichtung zum Beschichten und/oder Ätzen von Substraten in einer Vakuumkammer
TW286414B (en) * 1995-07-10 1996-09-21 Watkins Johnson Co Electrostatic chuck assembly
US5767628A (en) * 1995-12-20 1998-06-16 International Business Machines Corporation Helicon plasma processing tool utilizing a ferromagnetic induction coil with an internal cooling channel
US5885423A (en) * 1996-03-29 1999-03-23 Lam Research Corporation Cammed nut for ceramics fastening
US6176667B1 (en) * 1996-04-30 2001-01-23 Applied Materials, Inc. Multideck wafer processing system
TW343356B (en) * 1996-05-13 1998-10-21 Applied Materials Inc Deposition chamber and method for depositing low dielectric films
US6170428B1 (en) * 1996-07-15 2001-01-09 Applied Materials, Inc. Symmetric tunable inductively coupled HDP-CVD reactor
US5661093A (en) * 1996-09-12 1997-08-26 Applied Materials, Inc. Method for the stabilization of halogen-doped films through the use of multiple sealing layers
US6132517A (en) * 1997-02-21 2000-10-17 Applied Materials, Inc. Multiple substrate processing apparatus for enhanced throughput
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6083344A (en) * 1997-05-29 2000-07-04 Applied Materials, Inc. Multi-zone RF inductively coupled source configuration
US6077357A (en) * 1997-05-29 2000-06-20 Applied Materials, Inc. Orientless wafer processing on an electrostatic chuck
US5898179A (en) * 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US6395095B1 (en) * 1999-06-15 2002-05-28 Tokyo Electron Limited Process apparatus and method for improved plasma processing of a substrate
US6377437B1 (en) * 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US20010045262A1 (en) * 2000-02-28 2001-11-29 Applied Materials, Inc. Chemical vapor deposition chamber
JP2005048259A (ja) * 2003-07-31 2005-02-24 Matsushita Electric Ind Co Ltd プラズマ処理装置
JP4420380B2 (ja) * 2003-09-10 2010-02-24 大日本スクリーン製造株式会社 基板処理装置
US20050066902A1 (en) * 2003-09-26 2005-03-31 Tokyo Electron Limited Method and apparatus for plasma processing
KR100782380B1 (ko) * 2005-01-24 2007-12-07 삼성전자주식회사 반도체 제조장치
JP4973150B2 (ja) * 2006-11-27 2012-07-11 東京エレクトロン株式会社 ガス導入機構及び被処理体の処理装置
US7732728B2 (en) * 2007-01-17 2010-06-08 Lam Research Corporation Apparatuses for adjusting electrode gap in capacitively-coupled RF plasma reactor
US20080190364A1 (en) * 2007-02-13 2008-08-14 Applied Materials, Inc. Substrate support assembly
US8257548B2 (en) * 2008-02-08 2012-09-04 Lam Research Corporation Electrode orientation and parallelism adjustment mechanism for plasma processing systems
WO2009099660A2 (en) * 2008-02-08 2009-08-13 Lam Research Corporation Adjustable gap capacitively coupled rf plasma reactor including lateral bellows and non-contact particle seal
CN101351076B (zh) 2008-09-16 2011-08-17 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备
KR101136728B1 (ko) * 2010-10-18 2012-04-20 주성엔지니어링(주) 기판처리장치와 그의 분해 및 조립방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997047028A1 (en) * 1996-06-05 1997-12-11 Lam Research Corporation High flown vacuum chamber including equipment modules such as plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support
CN1225747A (zh) * 1996-06-05 1999-08-11 兰姆研究公司 包括设备组件例如等离子发生源、真空泵送设备和/或悬臂基片支承件的通用真空室
US6700089B1 (en) * 1999-03-30 2004-03-02 Tokyo Electron Limited Plasma processing device, its maintenance method, and its installation method
WO2009152259A2 (en) * 2008-06-10 2009-12-17 Lam Research Corporation Plasma processing systems with mechanisms for controlling temperatures of components

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