Negative Differential Resistance

This paper presents a computer aided study of the performances that can be obtained by using the Double Barrier Tunneling (DBRT) diodes in frequency multiplier applications. The Harmonic-Balance method is used to analyse the circuits. It is shown that the conversion efficiency and also the output power versus input power have a hysteresis type behaviour. The multiplication efficiency which results from the simulations is compared to the theoretic and previously reported ones. It is shown that the negative differential resistance region does not lead to conversion losses diminishing

We investigate the effect of changing mass transfer conditions through variation of rotation rate of a rotating disk electrode on features of oscillatory dynamics of negative differential resistance electrochemical systems. The theoretical analysis and numerical simulation of a prototype two-variable electrochemical model show that for oscillations close to a Hopf bifurcation the frequency (ω) increases with increase in rotation rate

Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman–Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140–300K). The current–voltage (I–V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model.

The current carried by the bound quasi-particles in the N-region of a mesoscopic superconductor-normal-metal-superconductor (SNS) weak-link has dc and cosine components. The dc component depends on the pair charge (-2e) transferred by each Andreev reflection at an NS interface. The pair-charge transfers decrease due to reduction of the allowed number of Andreev reflections when the voltage increases. This is the origin of the negative differential resistance at low bias voltage observed in I-V curves of SNS junctions. The quasi-particle states carrying the supercurrent in the N-region can sensitively be influenced by external high-frequency fields. In an experiment of the mesoscopic SNS mixer, prominent IF signal peaks are observed at low bias voltage. Each IF signal peak appeared in the broad bias voltage region, which corresponds to the broadness of the negative differential resistance region at low bias voltage. The SNS mixer operation at low voltage is promising for application to low-noise mixers in submillimetre-wave region.

Logic circuit based on the negative differential resistance (NDR) device is demonstrated. This basic NDR device is made of four metal-oxide-semiconductor field-effect-transistor (MOS) devices that could exhibit the NDR characteristic in the current-voltage oltage curve by suitably arranging the parameters of the MOS devices. The OR and NOR logic operation will be demonstrated based on the NDR devices and circuits. The devices and circuits are implemented by the standard 0.35μm CMOS process.

We report the investigation of electronic transport in GaN nanowires containing GaN/AlN quantum discs (QDiscs). The nanowires were grown by plasma-assisted molecular beam epitaxy and contacted by electron-beam lithography. Three nanowire samples containing QDiscs are analyzed and compared to a reference binary n-i-n GaN nanowire sample. The current-voltage measurements on single nanowires show that if the QDiscs are covered with a lateral GaN shell, the current mainly flows through the shell close to the lateral surface and the wire conductivity is extremely sensitive to the environmental conditions. On the contrary, if no GaN shell is present, the current flows through the QDisc region and a reproducible negative differential resistance related to electron tunneling through the QDiscs can be observed for temperatures up to 250 K. The demonstration of the resonant tunneling in GaN/AlN superlattices is of major importance for the development of nitride-based far-infrared quantum cascade lasers operating at high temperature.

Negative differential resistance (NDR) has been observed at room temperature in GaInP/GaAs double-heterojunction bipolar transistors (DHBTs). Both the common-emitter and common-base current-voltage characteristics and their magnetic field dependence have been studied to confirm that the observed NDR is due to resonant tunneling. The collector-base voltages at which the collector current resonances occur are calculated and are consistent with the measured values. The devices exhibit an offset voltage of 57 mV and ...

We propose a new multi-valued current-mode signed-digit adder based on negative-differential resistance (NDR) cells. Such cells have previously been implemented using either resonant-tunnelling diodes that are difficult to implement or complex CMOS circuits that emulate the negative-differential resistance of these cells but with limited performances.In this paper, we exploit the concept of the negative impedance region of the ULP (ultra-low

We propose a new MOS-NDR device that is composed of the metal-oxide-semiconductor field-effect- transistor (MOS) devices. This device could exhibit the negative differential resistance (NDR) characteristics in the current-voltage characteristics by suitably modulating the MOS parameters. We design a logic circuit which can operate the inverter, NOR, and NAND gates. The devices and circuits are fabricated by the standard 0.35μm

This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter.

... Yoram Selzer Dr.,; Adi Salomon,; Jamal Ghabboun,; David Cahen Prof. Article first published online: 7 MAR 2002. ... 34 CP Collier , G. Mattersteig , EW Wong , Y. Luo , K. Beverly , J. Sampaio , FM Raymo , JF Stoddart , JR Heath , Science 2000, 289, 1172. ...