- OSU website: http://www.ece.osu.edu/~berger/
- Professor in Electricaledit
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We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light... more
We report here the first RF noise measurements on two designs of n-doped GaN/AlN double-barrier resonant tunneling diodes (RTDs), each having a room-temperature negative differential resistance (NDR) and also strong near-UV light emission. The measurements are made with a standard, un-isolated RF receiver and calibration is made using a substitution-resistor/hot-cold radiometric technique which works in the positive differential resistance (PDR) region but not the NDR region. A high-quality InGaAs/AlAs double-barrier RTD is used as a control sample and displays shot noise suppression down to $\Gamma\approx$0.5 in the PDR region, as expected. The GaN/AlN RTDs display both shot-noise enhancement and suppression in the PDR regions, but no obvious sign of sudden shot-noise enhancement in the threshold bias region of light emission. This supports the hypothesis that the holes required for light emission are created by electronic (Zener) interband tunneling, not impact ionization. Further...
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We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0:998C0:002 on an n-type Si substrate. Epitaxial Ge0:998C0:002 was grown on a (100) Si substrate by solid source... more
We report on the fabrication and characterization of the first p-n diode made from a heterojunction of epitaxial p-type Ge0:998C0:002 on an n-type Si substrate. Epitaxial Ge0:998C0:002 was grown on a (100) Si substrate by solid source molecular beam epitaxy. The p-GeC/n-Si junction exhibits diode rectification. The I-V characteristics of the p-GeC/n-Si diode indicate a reasonable reverse saturation current of 89 pA/m 2 at 01 V and a high reverse breakdown voltage in excess of 040 V. Photoresponse from the Ge0:998C0:002 p-n diode was observed from 1.3-m laser excitation resulting in an external quantum efficiency of 1.4%. I. INTRODUCTION G ROUP IV semiconductor alloys have attracted intense studies over the last decade for their potential applications in electronic as well as optoelectronic integrated circuits on Si [1]--[2]. Due to the 4.2% lattice mismatch between Si and Ge, most investigations have involved SiGe heterostructures with limited Ge concentration ( 30%) to enhanc...
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Research Interests: Engineering, Materials Science, Solar Cell, Transmission Electron Microscopy, Solar Energy Materials, and 12 moreOptoelectronics, Physical sciences, CHEMICAL SCIENCES, Localized Resonance Plasmon Surface, Photocurrent, Silver Nanoparticle, Self Assembled Monolayer, Electric Field, Surface Plasmon, Localized Surface Plasmon Resonance, Short Circuit Current, and Optical Absorption
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Recently novel metallo-organic (MO) complexes have been synthesized by the Chisholm group at Ohio State, leading to the potential for a MO complex:fullerene bulk heterojuction solar cell that overcomes the limitations of current... more
Recently novel metallo-organic (MO) complexes have been synthesized by the Chisholm group at Ohio State, leading to the potential for a MO complex:fullerene bulk heterojuction solar cell that overcomes the limitations of current polymer:fullerene BHJ solar cell by expanding the usable solar spectrum into the near infrared. These metallated oligimers provide for high absorption at longer wavelengths of solar energy
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Resonant interband tunneling diodes on silicon substrates are demonstrated using a heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and δ-doped injectors. A low substrate... more
Resonant interband tunneling diodes on silicon substrates are demonstrated using a heterostructure grown by low temperature molecular beam epitaxy which utilized both a central intrinsic spacer and δ-doped injectors. A low substrate temperature of 370° C was used during growth to ensure a high level of dopant incorporation. AB δ-doping spike lowered the barrier for holes to populate the quantum well at the valence band discontinuity, and an Sb δ-doping reduces the doping requirement of the n-type bulk Si by producing a ...
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An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree... more
An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon energies are consistent with A-exciton emission. At 4.2 K, the exciton type likely transforms into B-exciton. These studies confirm that the EL emission comes from a cross-bandgap (or band-to-band) electron-hole radiative recombination and is excitonic. The excitons are formed by the holes generated through interband tunneling and the electrons injected into the GaN emitter region of the GaN/AlN heterostructure devices.
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Research Interests: Thermodynamics, Crystal Growth, Electronic Materials, Electron Diffraction, Molecular beam epitaxy, and 8 moreScanning tunneling microscopy, Layer by Layer, Three Dimensional, Heterojunctions, Electrical And Electronic Engineering, Solid Solutions, Reflection High-Energy Electron Diffraction, and RHEED
Page 1. IEEE ELECTRON DEVICE LETTERS, VOL. 26, NO. 8, AUGUST 2005 575 High Sensitivity Si-Based Backward Diodes for Zero-Biased Square-Law Detection and the Effect of Post-Growth Annealing on Performance ...
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Research Interests: Electronic Materials, Heat Treatment, Field effect transistors, Polymerization, Si, and 14 moreLeakage Current, Dielectrics, Radio Frequency, Emulsion polymerisation, Interfaces, Interface, Dielectric Constant, Radiofrequency, Capacitance voltage, Dielectric Materials, Electrical And Electronic Engineering, Heat Treatments, Polymer film, and Field effect transistor
We report on the progress towards fabrication of a ferromaget-GaInP(or AlGaAs)-GaAs devices. The devices are designed for use in future experiments to electrically detect, and spatially map spin accumulation in GaAs using a high... more
We report on the progress towards fabrication of a ferromaget-GaInP(or AlGaAs)-GaAs devices. The devices are designed for use in future experiments to electrically detect, and spatially map spin accumulation in GaAs using a high sensitivity magnetic force microscope. The device consists of n-GaAs channel capped with a 3-5nm thick highly doped GaInP or AlGaAs layer. Both the GaAs channel and
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Page 1. 151 kAÕcm2 peak current densities in SiÕSiGe resonant interband tunneling diodes for high-power mixed-signal applications Niu Jin, Sung-Yong Chung, Anthony T. Rice, and Paul R. Bergera) Department of Electrical ...
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Page 1. PS-26 SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes Niu Jin; Anthony T. Rice: Paul R. Berger,"" Phillip E. Thompson,C Peter H. Chi and David S. Simonsd aThe Ohio... more
Page 1. PS-26 SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes Niu Jin; Anthony T. Rice: Paul R. Berger,"" Phillip E. Thompson,C Peter H. Chi and David S. Simonsd aThe Ohio State University ...
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We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting... more
We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at