TWI754478B - Pixel circuit - Google Patents
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- TWI754478B TWI754478B TW109142175A TW109142175A TWI754478B TW I754478 B TWI754478 B TW I754478B TW 109142175 A TW109142175 A TW 109142175A TW 109142175 A TW109142175 A TW 109142175A TW I754478 B TWI754478 B TW I754478B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
本發明是有關於一種電路,且特別是有關於一種畫素電路。 The present invention relates to a circuit, and more particularly, to a pixel circuit.
傳統的畫素電路中,發光二極體會被串接電晶體所提供的電流驅動而發光,而該電晶體則可接收資料訊號的控制來調整電流,藉此調整發光二極體的顯示亮度。但資料訊號的擺幅往往會導致畫素電路中的一個或多個電晶體偏離預設的工作電壓準位,也就導致了發光二極體的顯示亮度與資料訊號所對應的顯示亮度之間的偏差。 In a traditional pixel circuit, the light-emitting diode is driven to emit light by a current provided by a series-connected transistor, and the transistor can be controlled by a data signal to adjust the current, thereby adjusting the display brightness of the light-emitting diode. However, the swing of the data signal often causes one or more transistors in the pixel circuit to deviate from the preset operating voltage level, which leads to a difference between the display brightness of the light-emitting diode and the display brightness corresponding to the data signal. deviation.
為了改善畫素電路,通常的做法是加大畫素電路的操作電壓與接地電壓之間的電壓差,藉此改善畫素電路的電壓範圍(voltage headroom)。但加大的操作電壓又會造成畫素電路的消耗功率增加,不利於畫素電路的應用。 In order to improve the pixel circuit, a common practice is to increase the voltage difference between the operating voltage of the pixel circuit and the ground voltage, thereby improving the voltage headroom of the pixel circuit. However, the increased operating voltage will increase the power consumption of the pixel circuit, which is not conducive to the application of the pixel circuit.
本發明提供一種畫素電路,其利用資料訊號來調整畫素 電路的顯示時間長度。 The present invention provides a pixel circuit which utilizes data signals to adjust pixels The length of time the circuit is displayed.
本發明的畫素電路包括第一發光二極體及第二發光二極體、第一開關及第二開關、第一電晶體及第二電晶體,重置補償電路、第一脈寬調變電路及第二脈寬調變電路。第一開關及第二開關接收發光訊號以分別驅動第一及第二發光二極體。第一電晶體串接於第一發光二極體與第一開關。第二電晶體串接於第二發光二極體與第二開關。重置補償電路耦接第一電晶體的控制端及第二電晶體的控制端。第一及第二脈寬調變電路分別耦接第一及第二電晶體的控制端。第一及第二脈寬調變電路分別依據第一及第二資料訊號以調整第一及第二發光二極體的顯示時間長度。 The pixel circuit of the present invention includes a first light-emitting diode and a second light-emitting diode, a first switch and a second switch, a first transistor and a second transistor, a reset compensation circuit, a first pulse width modulation circuit and a second pulse width modulation circuit. The first switch and the second switch receive the light-emitting signal to drive the first and second light-emitting diodes, respectively. The first transistor is connected in series with the first light emitting diode and the first switch. The second transistor is connected in series with the second light emitting diode and the second switch. The reset compensation circuit is coupled to the control terminal of the first transistor and the control terminal of the second transistor. The first and second pulse width modulation circuits are respectively coupled to the control terminals of the first and second transistors. The first and second pulse width modulation circuits adjust the display time lengths of the first and second light emitting diodes according to the first and second data signals, respectively.
基於上述,畫素電路可在不需增加畫素電路的電壓範圍的情況下,有效避免畫素電路1的功耗上升。另一方面,畫素電路可透過共用重置電路來降低電路元件以及訊號線的數量,進而降低畫素電路的製造成本。
Based on the above, the pixel circuit can effectively avoid the increase in power consumption of the
1、2:畫素電路 1, 2: pixel circuit
3:顯示裝置 3: Display device
10、11、20、21:脈寬調變電路 10, 11, 20, 21: PWM circuit
12、22:重置補償電路 12, 22: Reset compensation circuit
C1~C5:電容 C1~C5: Capacitor
D1、D2:發光二極體 D1, D2: light-emitting diodes
dV:電壓差值 dV: voltage difference
EM、EM[n]~EM[n+3]:發光訊號 EM, EM[n]~EM[n+3]: Lighting signal
N1~N5:節點 N1~N5: Node
S10~S13、S1[n]~S1[n+3]、S2、S2[n]~S2[n+3]:控制訊號 S10~S13, S1[n]~S1[n+3], S2, S2[n]~S2[n+3]: Control signal
SW1、SW2:開關 SW1, SW2: switch
T1、T2、T1~T16:電晶體 T1, T2, T1~T16: Transistor
TP1~TP5:時間區間 TP1~TP5: time interval
V1、V2:電壓準位 V1, V2: Voltage level
Vdata1、Vdata2:資料訊號 Vdata1, Vdata2: data signal
VDD:驅動高電壓 VDD: drive high voltage
Vref1、Vref2:參考電壓 Vref1, Vref2: reference voltage
VSS:驅動低電壓 VSS: drive low voltage
Vsweep、Vsweep[n]、Vsweep[n+3]:斜坡訊號 Vsweep, Vsweep[n], Vsweep[n+3]: Ramp signal
圖1為本發明實施例一畫素電路的示意圖。 FIG. 1 is a schematic diagram of a pixel circuit according to an embodiment of the present invention.
圖2A為本發明一畫素電路的示意圖。 FIG. 2A is a schematic diagram of a pixel circuit of the present invention.
圖2B為本發明實施例一畫素電路的操作波型示意圖。 FIG. 2B is a schematic diagram of an operation waveform of a pixel circuit according to an embodiment of the present invention.
圖3為本發明實施例一顯示裝置的部分示意圖。 FIG. 3 is a partial schematic diagram of a display device according to an embodiment of the present invention.
圖1為本發明實施例一畫素電路1的示意圖。畫素電路1包括發光二極體(light emitting diode,LED)D1、D2、開關SW1、SW2、電晶體T1、T2、脈寬調變電路10、11及重置補償電路12。發光二極體D1、開關SW1及電晶體T1互相串接於驅動高電壓VDD及驅動低電壓VSS之間,發光二極體D2、開關SW2及電晶體T2互相串接於驅動高電壓VDD及驅動低電壓VSS之間。開關SW1、SW2可接收發光訊號EM來分別驅動發光二極體D1、D2。脈寬調變電路10可依據資料訊號Vdata1來控制電晶體T1的致能或禁能,脈寬調變電路20可依據資料訊號Vdata2來控制電晶體T2的致能或禁能。因此,畫素電路1可透過脈寬調變電路10、11來分別調整發光二極體的顯示時間長度,以調整畫素電路1所顯示的灰階值。
FIG. 1 is a schematic diagram of a
詳細而言,發光二極體D1的第一端接收驅動高電壓VDD,開關SW1的第一端耦接發光二極體D1的第二端,開關SW1的第二端耦接電晶體T1的第一端,電晶體T1的第二端接收驅動低電壓VSS,開關SW1接收發光訊號EM的控制以導通或斷開其第一端與第二端之間的連接。發光二極體D2的第一端接收驅動高電壓VDD,開關SW2的第一端耦接發光二極體D2的第二端,開關SW2的第二端耦接電晶體T2的第一端,電晶體T2的第二端接收驅動低電壓VSS,開關SW2接收發光訊號EM的控制以導通或斷開其第一端與第二端之間的連接。開關SW1、SW2可依據發光訊號EM
來提供電流以驅動發光二極體D1、D2。電晶體T1、T2可依據脈寬調變電路10、11的控制來調整發光二極體D1、D2的顯示時間長度。
In detail, the first end of the light-emitting diode D1 receives the driving high voltage VDD, the first end of the switch SW1 is coupled to the second end of the light-emitting diode D1, and the second end of the switch SW1 is coupled to the first end of the transistor T1 At one end, the second end of the transistor T1 receives the driving low voltage VSS, and the switch SW1 receives the control of the light-emitting signal EM to turn on or off the connection between its first end and the second end. The first end of the light-emitting diode D2 receives the driving high voltage VDD, the first end of the switch SW2 is coupled to the second end of the light-emitting diode D2, the second end of the switch SW2 is coupled to the first end of the transistor T2, and the electrical The second terminal of the transistor T2 receives the driving low voltage VSS, and the switch SW2 receives the control of the light-emitting signal EM to turn on or off the connection between the first terminal and the second terminal. The switches SW1 and SW2 can be based on the luminous signal EM
to provide current to drive the light emitting diodes D1 and D2. The transistors T1 and T2 can adjust the display time lengths of the light-emitting diodes D1 and D2 according to the control of the pulse
發光二極體D1、D2可例如但非僅限於有機發光二極體(organic light emitting diode,OLED)、次毫米發光二極體(mini LED)、微發光二極體(micro LED)或量子點發光二極體(quantum dot,QD,可例如為QLED、QDLED),螢光(fluorescence)、磷光(phosphor)等其他適合之材料,其上述材料的任意排列組合。 The light-emitting diodes D1 and D2 can be, for example, but not limited to, organic light-emitting diodes (OLEDs), sub-millimeter light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dots Light emitting diodes (quantum dot, QD, such as QLED, QDLED), fluorescence, phosphor and other suitable materials, and any combination of the above materials.
脈寬調變電路10透過重置補償電路12耦接於電晶體T1的控制端,脈寬調變電路10可接收資料訊號Vdata1,並依據資料訊號Vdata1的電壓值進行脈寬調變(pulse width modulation),脈寬調變電路10並以脈寬調變後的資料訊號Vdata1來控制電晶體T1的導通或截止。脈寬調變電路11耦接於電晶體T2的控制端,脈寬調變電路11可接收資料訊號Vdata2,並依據資料訊號Vdata2的電壓值進行脈寬調變,脈寬調變電路11並以脈寬調變後的資料訊號Vdata2來控制電晶體T2的導通或截止。如此一來,脈寬調變電路10、11可分別依據資料訊號Vdata1、Vdata2來控制電晶體T1、T2的導通時間,據此調整發光二極體D1、D2的顯示時間長度。
The pulse
進一步,重置補償電路12耦接於電晶體T1、T2的控制端以及脈寬調變電路10。重置補償電路12可重置電晶體T1、T2的控制端的電壓。另外,重置補償電路12可用來等化電晶體T1、
T2控制端上的電壓,進而使脈寬調變電路10、11在控制電晶體T1、T2為致能時,電晶體T1、T2是接收到相同或相近的電壓準位而被致能。如此一來,發光二極體D1、D2所接收到的電流可被電晶體T1、T2控制為相同或相近,進而排除由於電晶體T1、T2兩者於控制端所接收到的電壓偏差,所導致發光二極體D1、D2的亮度誤差。
Further, the
簡言之,畫素電路1可依據資料訊號Vdata1、Vdata2來分別控制發光二極體D1、D2的顯示時間長度,藉以調整顯示灰階值。因此,畫素電路1可在不需增加畫素電路1的電壓範圍(voltage headroom)的情況下,有效避免畫素電路1的功耗上升。另一方面,畫素電路1可共用重置電路12,故畫素電路1中電路元件以及訊號線的數量可被有效降低,進而降低畫素電路1的製造成本。
In short, the
圖2A為本發明一畫素電路2的示意圖。畫素電路2包含發光二極體D1、D2、開關SW1、SW2、電晶體T1、T2、脈寬調變電路20、21及重置補償電路22。發光二極體D1、開關SW1及電晶體T1互相串接於驅動高電壓VDD及驅動低電壓VSS之間,發光二極體D2、開關SW2及電晶體T2互相串接於驅動高電壓VDD及驅動低電壓VSS之間。脈寬調變電路20透過重置補償電路22耦接於電晶體T1的控制端,脈寬調變電路21耦接於電晶體T2的控制端。重置補償電路22耦接於電晶體T1、T2的控制端。大致而言,脈寬調變電路20可依據資料訊號Vdata1來控制電晶
體T1的導通或截止,以調整發光二極體D1的顯示時間長度,脈寬調變電路21可依據資料訊號Vdata2來控制電晶體T2的導通或截止,以調整發光二極體D2的顯示時間長度。
FIG. 2A is a schematic diagram of a
詳細而言,開關SW1可包含例如為電晶體T15,電晶體T15的第一端耦接於發光二極體D1的第二端,電晶體T15的第二端耦接於電晶體T1的第一端,電晶體T15的控制端接收發光訊號EM。開關SW2可包含例如為電晶體T16,電晶體T16的第一端耦接於發光二極體D2的第二端,電晶體T16的第二端耦接於電晶體T2的第一端,電晶體T16的控制端接收發光訊號EM。如此一來,開關SW1、SW2可依據發光訊號來導通或斷開其第一端與第二端之間的連接,以提供電流來驅動發光二極體D1、D2。 In detail, the switch SW1 may include, for example, a transistor T15, the first end of the transistor T15 is coupled to the second end of the light emitting diode D1, and the second end of the transistor T15 is coupled to the first end of the transistor T1 terminal, the control terminal of the transistor T15 receives the light-emitting signal EM. The switch SW2 may include, for example, a transistor T16, the first end of the transistor T16 is coupled to the second end of the light emitting diode D2, the second end of the transistor T16 is coupled to the first end of the transistor T2, the transistor The control terminal of T16 receives the light-emitting signal EM. In this way, the switches SW1 and SW2 can turn on or off the connection between the first end and the second end of the switches according to the light-emitting signal, so as to provide current to drive the light-emitting diodes D1 and D2.
脈寬調變電路20間接耦接電晶體T1的控制端,脈寬調變電路20透過重置補償電路22耦接電晶體T1的控制端。脈寬調變電路20可接收斜坡訊號Vsweep及資料訊號Vdata1,脈寬調變電路20可依據斜坡訊號Vsweep及資料訊號Vdata1來控制電晶體T1為被致能或被禁能的。脈寬調變電路20可依據斜坡訊號Vsweep及資料訊號Vdata1的總和來控制電晶體T1。因此,脈寬調變電路20可對資料訊號Vdata1進行脈寬調變,依據資料訊號Vdata1的電壓值來控制電晶體T1的致能時間,進而調整發光二極體D1的顯示時間長度。
The pulse
脈寬調變電路21耦接電晶體T2的控制端。脈寬調變電路21接收斜坡訊號Vsweep及資料訊號Vdata2,脈寬調變電路21
可依據斜坡訊號Vsweep及資料訊號Vdata2來控制電晶體T2為被致能或被禁能的。脈寬調變電路21可依據斜坡訊號Vsweep及資料訊號Vdata2的總和來控制電晶體T2。因此,脈寬調變電路21可對資料訊號Vdata2進行脈寬調變,依據資料訊號Vdata2的電壓值來控制電晶體T2的致能時間,進而調整發光二極體D2的顯示時間長度。
The pulse
重置補償電路22耦接電晶體T1、T2的控制端及脈寬調變電路20、21。重置補償電路22可重置電晶體T1、T2控制端的電壓。另外,重置補償電路22可在電晶體T1、T2被致能時,提供相同或相近的電壓值來致能電晶體T1、T2,使發光二極體D1、D2接收到的驅動電流值為相同或相近的,進而排除控制端電壓差所導致的亮度偏差。進一步,重置補償電路22還可依據電晶體T1的閾值電壓來補償提供到電晶體T1、T2控制端的電壓,使補償電晶體T1、T2所提供的電流可免於電晶體T1、T2的製程變異所影響。
The
更具體而言,脈寬調變電路20包括電晶體T3、T5~T7及電容C1。電晶體T3的第一端耦接節點N2,電晶體T3的第一端透過節點N2間接耦接電晶體T1的控制端,電晶體T3的控制端耦接節點N3,電晶體T3的第二端接收參考電壓Vref2。電晶體T5的第一端接收斜坡訊號Vsweep,電晶體T5的控制端接收控制訊號S10,電晶體T5的第二端耦接節點N3及電晶體T3的控制端。電晶體T6的第一端耦接節點N3、電晶體T5的第二端及電晶體
T3的控制端,電晶體T6的控制端接收控制訊號S11,電晶體T7的第一端耦接電晶體T6的第二端,電晶體T7的控制端耦接電晶體T7的第一端,電晶體T7的第二端接收資料訊號Vdata1。電容C1的第一端接收斜坡訊號Vsweep,電容C1的第二端耦接節點N3及電晶體T3的控制端。
More specifically, the
脈寬調變電路21包括電晶體T4、T8~T10及電容C2。電晶體T4的第一端耦接電晶體T2的控制端,電晶體T4的控制端耦接節點N5,電晶體T4的第二端接收控制訊號S2。電晶體T8的第一端接收斜坡訊號Vsweep,電晶體T8的控制端接收控制訊號S11,電晶體T8的第二端耦接節點N5及電晶體T4的控制端。電晶體T9的第一端耦接節點N5、電晶體T8的第二端及電晶體T4的控制端,電晶體T9的控制端接收控制訊號S12,電晶體T10的第一端耦接電晶體T9的第二端,電晶體T10的控制端耦接電晶體T10的第一端,電晶體T10的第二端接收資料訊號Vdata2。電容C2的第一端接收斜坡訊號Vsweep,電容C1的第二端耦接節點N5及電晶體T4的控制端。
The pulse
重置補償電路22包括電晶體T11~T14及電容C3~C5。電容C3的第一端接收驅動低電壓VSS,電容C3的第二端耦接節點N2。電容C4的第一端耦接電容C3的第二端,電容C4的第二端耦接電晶體T1的控制端。電容C5的第一端耦接電晶體T2的的控制端,電容C5的第二端耦接電晶體T2的第二端。電晶體T11耦接於電容C3及電容C4之間的節點N2。電晶體T11的第一端接
收參考電壓Vref1,電晶體T11的第二端耦接節點N2,電晶體T11的控制端接收控制訊號S13。電晶體T12的第一端接收斜坡訊號Vsweep,電晶體T12的第二端耦接節點N1及電晶體T1的控制端,電晶體T12的控制端接收控制訊號S11。電晶體T13的第一端耦接節點N1及電晶體T1的控制端,電晶體T13的第二端耦接電晶體T1的第一端,電晶體T13的控制端接收控制訊號S12。電晶體T14的第一端耦接該電晶體T1的控制端,電晶體T14的第二端耦接電晶體T2的控制端,電晶體T14的控制端接收控制訊號S2。
The
圖2B為本發明實施例一畫素電路2的操作波型示意圖。圖2B中繪示了控制訊號S10~S13、S2、發光訊號EM及斜坡訊號Vsweep在時間區間TP1~TP5中的電壓波型,接下來請共同參考圖2A、2B來理解下方關於畫素電路2的操作說明。
FIG. 2B is a schematic diagram of an operation waveform of the
在時間區間TP1中,控制訊號S10為第一邏輯電壓準位(例如為高電壓準位),控制訊號S11~S13、S2為第二邏輯電壓準位(例如為低電壓準位),發光訊號EM為第二邏輯電壓準位(例如為低電壓準位),斜坡訊號Vsweep為電壓準位V1。節點N2、N3的電壓準位VN2、VN3可為:VN2=Vref2 In the time interval TP1, the control signal S10 is a first logic voltage level (eg, a high voltage level), the control signals S11-S13, S2 are a second logic voltage level (eg, a low voltage level), and the light-emitting signal EM is the second logic voltage level (eg, a low voltage level), and the ramp signal Vsweep is the voltage level V1. The voltage levels VN2 and VN3 of the nodes N2 and N3 can be: VN2=Vref2
VN3=V1 VN3=V1
控制訊號S10所控制的電晶體T5可被致能而導通,並將電壓準位V1提供至節點N3。進一步,電晶體T3被節點N3的電壓準位VN3致能而導通,並將參考電壓Vref2提供至節點N2。 The transistor T5 controlled by the control signal S10 can be enabled to be turned on and provide the voltage level V1 to the node N3. Further, the transistor T3 is turned on by being enabled by the voltage level VN3 of the node N3, and provides the reference voltage Vref2 to the node N2.
在時間區間TP2中,控制訊號S11為第一邏輯電壓準位(例如為高電壓準位),控制訊號S10、S12、S13、S2為第二邏輯電壓準位(例如為低電壓準位),發光訊號EM為第二邏輯電壓準位(例如為低電壓準位),斜坡訊號Vsweep為電壓準位V1。控制訊號S11所控制的電晶體T6、T9、T12可被致能而導通。節點N1、N2、N3、N4、N5的電壓準位VN1、VN2、VN3、VN4、VN5可為:VN1=VN5=V1 In the time interval TP2, the control signal S11 is a first logic voltage level (eg, a high voltage level), and the control signals S10, S12, S13, and S2 are a second logic voltage level (eg, a low voltage level), The light-emitting signal EM is a second logic voltage level (eg, a low voltage level), and the ramp signal Vsweep is a voltage level V1. The transistors T6, T9 and T12 controlled by the control signal S11 can be enabled and turned on. The voltage levels VN1, VN2, VN3, VN4, and VN5 of nodes N1, N2, N3, N4, and N5 can be: VN1=VN5=V1
VN2=Vref2 VN2=Vref2
VN3=Vdata1+Vth7 VN3=Vdata1+Vth7
VN4=V2其中V2為控制訊號S2的低電壓準位,Vth7為電晶體T7的閾值電壓。針對節點N1而言,電晶體T12被控制訊號S11致能而導通,使得在電壓準位V1的斜坡訊號Vsweep可被提供至節點N1。針對節點N3而言,電晶體T6可被控制訊號S11致能而導通,使電容C1第二端透過電晶體T6、T7進行放電,直到電晶體T7的控制端與第二端之間的電壓差值等於電晶體T7本身的閾值電壓,因此,節點N3的電壓準位VN3可等於資料訊號Vdata1與閾值電壓Vth7的總和。進一步,電晶體T3可被節點N3的電壓準位VN3致能而導通,參考電壓Vref2因而被提供至節點N2。針對節點N5而言,電晶體T10被控制訊號S11致能而導通,斜坡訊號Vsweep的電壓準位V1被提供至節點N5。而電晶體T4可被節點N5的電壓準位 VN5致能而導通,使控制訊號S2的電壓準位V2透過電晶體T4被提供至節點N4。 VN4=V2, where V2 is the low voltage level of the control signal S2, and Vth7 is the threshold voltage of the transistor T7. For the node N1, the transistor T12 is enabled and turned on by the control signal S11, so that the ramp signal Vsweep at the voltage level V1 can be provided to the node N1. For the node N3, the transistor T6 can be turned on by the control signal S11, so that the second end of the capacitor C1 is discharged through the transistors T6 and T7 until the voltage difference between the control end and the second end of the transistor T7 is reached The value is equal to the threshold voltage of the transistor T7 itself, so the voltage level VN3 of the node N3 can be equal to the sum of the data signal Vdata1 and the threshold voltage Vth7. Further, the transistor T3 can be turned on by being enabled by the voltage level VN3 of the node N3, and the reference voltage Vref2 is thus provided to the node N2. For the node N5, the transistor T10 is enabled and turned on by the control signal S11, and the voltage level V1 of the ramp signal Vsweep is provided to the node N5. The transistor T4 can be leveled by the voltage level of the node N5 VN5 is enabled and turned on, so that the voltage level V2 of the control signal S2 is supplied to the node N4 through the transistor T4.
因此,在時間區間TP1、TP2後,電容C1~C5的端電壓可被重置。另外,脈寬調變電路20中的脈寬調變電路20可將資料訊號Vdata1的電壓資訊及電晶體T7的閾值電壓Vth7儲存在節點N3。
Therefore, after the time intervals TP1 and TP2, the terminal voltages of the capacitors C1-C5 can be reset. In addition, the
在時間區間TP3中,控制訊號S12、S2為第一邏輯電壓準位(例如為高電壓準位),控制訊號S10、S11、S13為第二邏輯電壓準位(例如為低電壓準位),發光訊號EM為第二邏輯電壓準位(例如為低電壓準位),斜坡訊號Vsweep為電壓準位V1。節點N1、N2、N3、N4、N5的電壓準位VN1、VN2、VN3、VN4、VN5可為:VN1=VN4=VSS+Vth1 In the time interval TP3, the control signals S12, S2 are the first logic voltage level (eg, the high voltage level), the control signals S10, S11, S13 are the second logic voltage level (eg, the low voltage level), The light-emitting signal EM is a second logic voltage level (eg, a low voltage level), and the ramp signal Vsweep is a voltage level V1. The voltage levels VN1, VN2, VN3, VN4 and VN5 of the nodes N1, N2, N3, N4 and N5 can be: VN1=VN4=VSS+Vth1
VN2=Vref2 VN2=Vref2
VN3=Vdata1+Vth7 VN3=Vdata1+Vth7
VN5=Vdata2+Vth10其中Vth1、Vth10分別為電晶體T1、T10的閾值電壓。詳細而言,節點N2、N3的電壓準位VN2、VN3維持不變。而針對節點N1的電壓準位VN1而言,電晶體T13被控制訊號S12致能而導通。由於在時間區間TP3起始時,節點N1的電壓準位VN1仍然保持為斜坡訊號Vsweep的電壓準位V1,而隨著電晶體T13的導通,節點N1的電壓準位VN1亦可控制電晶體T1致能而導通,使節點 N1透過可透過被致能的電晶體T13、T1對驅動低電壓VSS來放電,直到電晶體T1的控制端與第二端之間的電壓差等於電晶體T1本身的閾值電壓Vth1。針對節點N4而言,重置補償電路的電晶體T14可被控制訊號S2致能而導通,使節點N1、N4的電壓準位VN1、VN4為相同或相近的電壓準位。針對節點N5而言,電晶體T9可被控制訊號S12致能而導通,使電容C2的第二端透過電晶體T9、T10進行放電,直到電晶體T10的控制端與第二端之間的電壓差值等於電晶體T10本身的閾值電壓。 VN5=Vdata2+Vth10 wherein Vth1 and Vth10 are the threshold voltages of transistors T1 and T10 respectively. In detail, the voltage levels VN2 and VN3 of the nodes N2 and N3 remain unchanged. For the voltage level VN1 of the node N1, the transistor T13 is enabled by the control signal S12 to be turned on. Since at the beginning of the time interval TP3, the voltage level VN1 of the node N1 is still maintained at the voltage level V1 of the ramp signal Vsweep, and as the transistor T13 is turned on, the voltage level VN1 of the node N1 can also control the transistor T1. is enabled and turned on, so that the node N1 discharges the driving low voltage VSS through the enabled transistors T13 and T1 until the voltage difference between the control terminal and the second terminal of the transistor T1 is equal to the threshold voltage Vth1 of the transistor T1 itself. For the node N4, the transistor T14 of the reset compensation circuit can be turned on by being enabled by the control signal S2, so that the voltage levels VN1 and VN4 of the nodes N1 and N4 are the same or similar voltage levels. For the node N5, the transistor T9 can be turned on by the control signal S12, so that the second end of the capacitor C2 is discharged through the transistors T9 and T10 until the voltage between the control end and the second end of the transistor T10 is reached The difference is equal to the threshold voltage of transistor T10 itself.
因此,在時間區間TP3中,脈衝調變電路21可將資料訊號Vdata2的電壓資料及電晶體T10的閾值電壓Vth10儲存在節點N5。另一方面,重置補償電路22可等化電晶體T1、T2的控制端電壓,並將將電晶體T1的閾值電壓Vth1儲存在節點N1、N2。
Therefore, in the time interval TP3, the
在時間區間TP4中,控制訊號S13、S2為第一邏輯電壓準位(例如為高電壓準位),控制訊號S10~S12為第二邏輯電壓準位(例如為低電壓準位),發光訊號EM為第二邏輯電壓準位(例如為低電壓準位),斜坡訊號Vsweep可由電壓準位V1被下拉電壓差值dV後,斜坡訊號Vsweep再以預設的斜率漸增。節點N1、N2、N3、N4、N5的電壓準位VN1、VN2、VN3、VN4、VN5可為:
VN2=Vref1 VN2=Vref1
VN3=Vdata1+Vth7-dV VN3=Vdata1+Vth7-dV
VN5=Vdata2+Vth10-dV其中CV4、CV5分別為電容C4、C5的電容值。針對節點N1、N2、N4而言,在時間區間TP4起始時,重置補償電路22的電晶體T14保持為導通。另外,由於連接節點N1、N4的電晶體T4、T11、T12皆被禁能而截止,使得電容C4、C5為互相串接於參考電壓Vref1及驅動低電壓VSS之間,而電容C4、C5之間的節點N1、N4為浮接(floating)。隨著控制訊號S13致能電晶體T11,節點N2的電壓準位VN2由參考電壓Vref2改變為參考電壓Vref1。如此一來,電壓準位VN2的電壓變化量(也就是Vref1-Vref2)也會導致串接電容C4、C5之間耦接的節點N1、N4產生電荷重分配(charge redistribution)。而針對節點N3、N5的電壓準位VN3、VN5而言,隨著斜坡訊號Vsweep被下拉電壓差值dV,節點N3、N5的電壓準位VN3、VN5也被下拉了同樣的電壓差值dV。
VN5=Vdata2+Vth10-dV where CV4 and CV5 are the capacitance values of capacitors C4 and C5 respectively. For the nodes N1, N2, N4, at the beginning of the time interval TP4, the transistor T14 of the
在時間區間TP5中,控制訊號S10~S13、S2為第二邏輯電壓準位(例如為低電壓準位),發光訊號EM為第一邏輯電壓準位(例如為高電壓準位),斜坡訊號Vsweep以預設斜率漸增。 In the time interval TP5, the control signals S10-S13, S2 are the second logic voltage level (eg, the low voltage level), the light-emitting signal EM is the first logic voltage level (eg, the high voltage level), and the ramp signal Vsweep increases with a preset slope.
在時間區間TP5起始時,開關SW1、SW2可被發光訊號EM控制而導通,電晶體T1、T2可分別被電壓準位VN1、VN4致能而導通。故發光二極體D1、D2可接收電流並進行顯示。 When the time interval TP5 starts, the switches SW1 and SW2 can be controlled by the light-emitting signal EM to be turned on, and the transistors T1 and T2 can be turned on by the voltage levels VN1 and VN4 respectively. Therefore, the light-emitting diodes D1 and D2 can receive current and display.
詳細而言,當電晶體T1被電壓準位VN1致能時,電晶體T1可依據控制端電壓與第二端之間的電壓差再減去電晶體T1本身的閾值電壓Vth1來提供電流至發光二極體D1。由於節點N1
的電壓準位VN1中包含有驅動低電壓VSS及閾值電壓Vth1的電壓資訊,因此,電晶體T1的控制端電壓與電晶體T1的第二端電壓相減所產生的電壓差,可較佳地消去關於驅動低電壓VSS的電壓資訊,再將電晶體T1的控制端與第二端之間的電壓差減去電晶體T1本身的閾值電壓Vth1之後,電晶體T1所提供的電流可獨立於驅動低電壓VSS及電晶體T1本身的閾值電壓Vth1。相似地,節點N4的電壓準位VN4亦包含有驅動低電壓VSS及閾值電壓Vth1的電壓資訊。因此,電晶體T2所提供的電流可獨立於驅動低電壓VSS及電晶體T2本身的閾值電壓Vth2,只要電晶體T1、T2為匹配的電晶體即可。更具體而言,重置補償電路22可提供經補償的電壓至電晶體T1、T2的控制端,以針對走線阻抗對驅動低電壓VSS所產生的壓降進行補償,並針對製程變異對電晶體T1、T2所帶來的閾值電壓Vth2變異進行補償,以於發光二極體D1、D2顯示時排除非理想因素。
Specifically, when the transistor T1 is enabled by the voltage level VN1, the transistor T1 can supply current to emit light by subtracting the threshold voltage Vth1 of the transistor T1 according to the voltage difference between the control terminal voltage and the second terminal. Diode D1. Since node N1
The voltage level VN1 includes the voltage information of the driving low voltage VSS and the threshold voltage Vth1. Therefore, the voltage difference generated by the subtraction of the control terminal voltage of the transistor T1 and the second terminal voltage of the transistor T1 can preferably be After eliminating the voltage information about the driving low voltage VSS, and then subtracting the threshold voltage Vth1 of the transistor T1 from the voltage difference between the control terminal and the second terminal of the transistor T1, the current provided by the transistor T1 can be independent of the driving The low voltage VSS and the threshold voltage Vth1 of the transistor T1 itself. Similarly, the voltage level VN4 of the node N4 also includes the voltage information of the driving low voltage VSS and the threshold voltage Vth1. Therefore, the current provided by the transistor T2 can be independent of the driving low voltage VSS and the threshold voltage Vth2 of the transistor T2 itself, as long as the transistors T1 and T2 are matched transistors. More specifically, the
接著,在時間區間TP5起始之後,由於重置補償電路22的電晶體T14被控制訊號S2禁能而截止,故脈寬調變電路20、21控制電晶體T1、T2控制端電壓的操作可為互相獨立。脈寬調變電路20可依據斜坡訊號Vsweep及資料訊號Vdata1來控制電晶體T1何時為被禁能而截止。脈寬調變電路21可依據斜坡訊號Vsweep及資料訊號Vdata2來控制電晶體T2何時為被禁能而截止。
Then, after the time interval TP5 starts, since the transistor T14 of the
針對脈寬調變電路20而言,脈寬調變電路20中的電晶
體T3在時間區間TP5起始時是被電壓準位VN3(也就是VN3=Vdata1+Vth7-dV)禁能而截止。而隨著斜坡訊號Vsweep漸增,在時間區間TP5起始之後,當電晶體T3的控制端與第二端之間的壓差大於等於電晶體T3本身的閾值電壓Vth3時,電晶體T3可被電壓準位VN3致能而導通,參考訊號Vref2可透過電晶體T3被提供至節點N2,使電容C4的第一端由參考電壓Vref1改變為參考電壓Vref2,且於電容C4的第二端產生與電容C4第一端相同的電壓差值。如此一來,對應於電晶體T3的導通,電晶體T1可被電壓準位VN1禁能而截止,並停止發光二極體D1的顯示。
For the pulse
相似地,針對脈寬調變電路21而言,脈寬調變電路21中的電晶體T4在時間區間TP5起始時是被電壓準位VN5(也就是VN5=Vdata2+Vth10-dV)禁能而截止。而隨著斜坡訊號Vsweep增加,在時間區間TP5起始之後,當電晶體T4的控制端與第二端之間的壓差大於等於電晶體T4本身的閾值電壓Vth4時,電晶體T4可被導通,控制訊號S2的電壓準位V2可透過電晶體T4被提供至節點N4。如此一來,對應於電晶體T4的導通,電晶體T2可被電壓準位VN4禁能而截止,並停止發光二極體D2的顯示。
Similarly, for the pulse
更具體而言,當資料訊號Vdata1、Vdata2的電壓值為相對高時,隨著斜坡訊號Vsweep的漸增,電晶體T3、T4會較快被電壓準位VN3、VN5導通以禁能電晶體T1、T2,使發光二極體D1、D2可分別具有相對短的顯示時間長度。反之亦然,當資料訊
號Vdata1、Vdata2的電壓值為相對低時,發光二極體D1、D2可分別具有相對長的顯示時間長度。如此一來,脈寬調變電路20可依據資料訊號Vdata1的電壓值來調整電晶體T1何時導通或截止,進而調整發光二極體D1的顯示時間長度。脈寬調變電路21可依據資料訊號Vdata2的電壓值來調整電晶體T2何時導通或截止,進而調整發光二極體D2的顯示時間長度。因此,畫素電路2可透過對資料訊號Vdata1、Vdata2進行脈寬調變的方式來調整發光二極體D1、D2所顯示的灰階值。
More specifically, when the voltage values of the data signals Vdata1 and Vdata2 are relatively high, as the ramp signal Vsweep increases gradually, the transistors T3 and T4 are quickly turned on by the voltage levels VN3 and VN5 to disable the transistor T1. , T2, so that the light-emitting diodes D1 and D2 can respectively have a relatively short display time length. Vice versa, when data
When the voltage values of the numbers Vdata1 and Vdata2 are relatively low, the light-emitting diodes D1 and D2 can respectively have a relatively long display time length. In this way, the pulse
整體而言,畫素電路2透過共用重置補償電路22可節省畫素電路2的製造成本。透過畫素電路2整體的結構可改善走線阻抗所產生的電壓偏差、針對驅動電晶體的閾值電壓進行補償,避免製程變異對畫素電路所產生的電流或亮度產生變異。另一方面,畫素電路2可等化電晶體T1、T2控制端的電壓,發光二極體D1、D2被相同或相近的電流所驅動,進而排除由於控制電壓偏差所導致的亮度誤差。
Overall, the
圖3為本發明實施例一顯示裝置3的部分示意圖。顯示裝置3包含例如為圖1、2A中所繪示的畫素電路1/2,畫素電路1/2可於顯示裝置3中以陣列形式排列。顯示裝置3可提供控制訊號S1[n]、S2[n]、發光訊號EM[n]、斜坡訊號Vsweep[n]至第n列的畫素電路1/2,畫素電路1/2可依據需求來設置走線,來取得所需要的控制訊號。關於畫素電路1/2的操作細節,請參考上方相關段落,於此不另贅述。
FIG. 3 is a partial schematic diagram of a
綜上所述,本發明的每個畫素電路中可包含至少兩個發光二極體,該些發光二極體可共用重置補償電路,降低畫素電路的製造成本。透過畫素電路整體的結構可改善走線阻抗所產生的電壓偏差、針對驅動電晶體的閾值電壓進行補償,避免製程變異對畫素電路所產生的電流或亮度產生變異。另一方面,畫素電路可提供經等化的電壓,使發光二極體被相同或相近的電流所驅動,進而排除由於控制電壓偏差所導致的亮度誤差。 To sum up, each pixel circuit of the present invention may include at least two light-emitting diodes, and the light-emitting diodes may share the reset compensation circuit, thereby reducing the manufacturing cost of the pixel circuit. Through the overall structure of the pixel circuit, the voltage deviation caused by the trace impedance can be improved, and the threshold voltage of the driving transistor can be compensated, so as to avoid the variation of the current or brightness generated by the pixel circuit due to process variation. On the other hand, the pixel circuit can provide an equalized voltage so that the light-emitting diodes are driven by the same or similar current, thereby eliminating the brightness error caused by the deviation of the control voltage.
1:畫素電路
10、11:脈寬調變電路
12:重置補償電路
D1、D2:發光二極體
EM:發光訊號
SW1、SW2:開關
T1、T2:電晶體
Vdata1、Vdata2:資料訊號
VDD:驅動高電壓
VSS:驅動低電壓
1:
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TW109145074A TWI742967B (en) | 2020-06-10 | 2020-12-18 | Pixel driving circuit |
TW109145315A TWI749958B (en) | 2020-06-10 | 2020-12-21 | Pixel driving circuit |
TW109147231A TWI762137B (en) | 2020-06-10 | 2020-12-31 | Pixel compensation circuit |
TW110106520A TWI762212B (en) | 2020-06-10 | 2021-02-24 | Pixel driving device |
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TW110106520A TWI762212B (en) | 2020-06-10 | 2021-02-24 | Pixel driving device |
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