TW202147288A - Pixel compensation circuit - Google Patents
Pixel compensation circuit Download PDFInfo
- Publication number
- TW202147288A TW202147288A TW109147231A TW109147231A TW202147288A TW 202147288 A TW202147288 A TW 202147288A TW 109147231 A TW109147231 A TW 109147231A TW 109147231 A TW109147231 A TW 109147231A TW 202147288 A TW202147288 A TW 202147288A
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- node
- voltage source
- unit
- voltage value
- Prior art date
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/40—Control techniques providing energy savings, e.g. smart controller or presence detection
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
Description
本揭示中所述實施例內容是有關於一種畫素補償電路,特別關於一種利用定電流購置發光二極體的灰階的畫素補償電路。The contents of the embodiments described in the present disclosure relate to a pixel compensation circuit, especially a pixel compensation circuit that utilizes a constant current to purchase grayscales of light-emitting diodes.
為了產生亮度一致的LED背光板,許多的方法被提出。然而,於輸出高亮度時,大電流流經驅動電晶體而產生的壓降可能導致電流控制不易,雖可透過增加驅動電晶的跨壓以解決電流控制不易的問題,但會提高功率消耗。此外,由於微尺寸發光二極體(mini LED)相較一般有機發光二極體需要較大的驅動電流,電壓源容易因傳遞路徑中的線阻產生偏移,導致每個畫素的電壓源端的電壓不同,使輸出電流產生誤差。In order to produce LED backlight panels with uniform brightness, many methods have been proposed. However, when outputting high brightness, the voltage drop generated by the large current flowing through the driving transistor may lead to difficulty in current control. Although the problem of difficult current control can be solved by increasing the voltage across the driving transistor, it will increase power consumption. In addition, since micro-sized light-emitting diodes (mini LEDs) require larger driving currents than general organic light-emitting diodes, the voltage source is easily offset due to the wire resistance in the transmission path, resulting in the voltage source of each pixel. The voltages at the terminals are different, resulting in an error in the output current.
本揭示之一些實施方式是關於一種畫素補償電路,包含發光二極體、驅動單元、控制單元、資料寫入單元、重置單元以及下拉單元。驅動單元連接至該發光二極體以及第一節點。控制單元連接至第一節點。資料寫入單元連接至控制單元。重置單元連接至第一節點。下拉單元連接至控制單元。控制單元更用以依據資料寫入單元所接收的資料電壓值控制第一節點的電壓下降時間,以調整發光二極體的灰階。資料寫入單元包含第一電晶體、第二電晶體、第二電晶體、第三電晶體以及第一電容。第一電晶體的第一端連接至第一電壓源,第一電晶體的第二端連接至第二節點。第二電晶體的第一端連接至第二節點,第二電晶體的第二端連接至第三節點。第三電晶體的第一端以及控制端連接至第三節點,且第三電晶體的第二端連接至資料輸入源。第一電容的第一端連接至第二節點,且第一電容的第二端連接至第一參考電壓源。Some embodiments of the present disclosure relate to a pixel compensation circuit including a light emitting diode, a driving unit, a control unit, a data writing unit, a reset unit, and a pull-down unit. The driving unit is connected to the light emitting diode and the first node. The control unit is connected to the first node. The data writing unit is connected to the control unit. The reset unit is connected to the first node. The pull-down unit is connected to the control unit. The control unit is further used for controlling the voltage falling time of the first node according to the data voltage value received by the data writing unit, so as to adjust the gray scale of the light emitting diode. The data writing unit includes a first transistor, a second transistor, a second transistor, a third transistor and a first capacitor. The first end of the first transistor is connected to the first voltage source, and the second end of the first transistor is connected to the second node. The first end of the second transistor is connected to the second node, and the second end of the second transistor is connected to the third node. The first terminal and the control terminal of the third transistor are connected to the third node, and the second terminal of the third transistor is connected to the data input source. The first end of the first capacitor is connected to the second node, and the second end of the first capacitor is connected to the first reference voltage source.
在本文中所使用的用詞『耦接』亦可指『電性耦接』,且用詞『連接』亦可指『電性連接』。『耦接』及『連接』亦可指二個或多個元件相互配合或相互互動。As used herein, the term "coupled" may also refer to "electrically coupled," and the term "connected" may also refer to "electrically connected." "Coupled" and "connected" may also refer to two or more elements cooperating or interacting with each other.
參考第1圖。第1圖是依照本揭示一些實施例所繪示的畫素補償電路100的示意圖。Refer to Figure 1. FIG. 1 is a schematic diagram of a
以第1圖示例而言,畫素補償電路100包含發光二極體105、驅動單元110、下拉單元130、重置單元150、控制單元170以及資料寫入單元190。Taking the example of FIG. 1 as an example, the
於連接關係上,發光二極體105與驅動單元110相連接。驅動單元110、重置單元150、控制單元170均與節點A相連接。下拉單元130與控制單元170相連接。資料寫入單元190與控制單元170相連接。In terms of connection, the
詳細而言,驅動單元110包含電晶體110。下拉單元130包含電晶體T2和電晶體T3。重置單元150包含電晶體T5。控制單元170包含電晶體T4、T6、T7、T8、T9與電容C1、C3。資料寫入單元190包含電晶體T10、T11、T12與電容C2。In detail, the
於連接關係上,發光二極體105的一端連接於電壓源VDD,發光二極體105的另一端連接於電晶體T1。電晶體T1的一端連接於發光二極體105,電晶體T1的另一端連接於電壓源VSS,電晶體T1的控制端連接於節點A。In terms of connection, one end of the
電晶體T2的一端連接於低電壓源VL,電晶體T2的另一端連接於節點B。電晶體T2的控制端接收控制訊號S3。電晶體T3的一端連接於節點B,電晶體T3的另一端連接於電壓源VSS,電晶體T3的控制端接收控制訊號S4。One end of the transistor T2 is connected to the low voltage source VL, and the other end of the transistor T2 is connected to the node B. The control terminal of the transistor T2 receives the control signal S3. One end of the transistor T3 is connected to the node B, the other end of the transistor T3 is connected to the voltage source VSS, and the control end of the transistor T3 receives the control signal S4.
電晶體T5的一端連接於電壓源VSS,電晶體T5的另一端連接於節點A,電晶體T5的控制端接收控制訊號S5。One end of the transistor T5 is connected to the voltage source VSS, the other end of the transistor T5 is connected to the node A, and the control end of the transistor T5 receives the control signal S5.
電晶體T4的一端連接於節點A、電晶體T4的另一端連接於節點D,電晶體T4的控制端接收控制訊號S3。電晶體T6的一端連接於節點A,電晶體T6的另一端連接於節點C,電晶體T6的控制端連接於節點D。電晶體T7的一端連接於節點D,電晶體T7的另一端連接於參考電壓源VLED,電晶體T7的控制端接收控制訊號S4。電晶體T8的一端連接於參考電壓源VREF,電晶體T8的另一端連接於節點C,電晶體T8的控制端連接於節點E。電晶體T9的一端連接於高電壓源VH,電晶體T9的另一端連接於節點C,電晶體T9的控制端接收控制訊號S2。電容C1的一端連接於節點A,電容C1電另一端連接於節點B。電容C3的一端連接於節點C,電容C3的另一端連接於參考電壓源VLED。One end of the transistor T4 is connected to the node A, the other end of the transistor T4 is connected to the node D, and the control end of the transistor T4 receives the control signal S3. One end of the transistor T6 is connected to the node A, the other end of the transistor T6 is connected to the node C, and the control end of the transistor T6 is connected to the node D. One end of the transistor T7 is connected to the node D, the other end of the transistor T7 is connected to the reference voltage source VLED, and the control end of the transistor T7 receives the control signal S4. One end of the transistor T8 is connected to the reference voltage source VREF, the other end of the transistor T8 is connected to the node C, and the control end of the transistor T8 is connected to the node E. One end of the transistor T9 is connected to the high voltage source VH, the other end of the transistor T9 is connected to the node C, and the control end of the transistor T9 receives the control signal S2. One end of the capacitor C1 is connected to the node A, and the other end of the capacitor C1 is connected to the node B. One end of the capacitor C3 is connected to the node C, and the other end of the capacitor C3 is connected to the reference voltage source VLED.
電晶體T10的一端連接於電壓源VSS,電晶體T10的另一端連接於節點E,電晶體T10的控制端接收控制訊號S1。電晶體T11的一端連接於節點E,電晶體T11的另一端連接於節點F,電晶體T11的控制端接收控制訊號S2。電晶體T12的一端連接於節點F,電晶體T12的另一端連接於資料輸入源VDATA,電晶體T12的控制端連接於節點F。電容C2的一端連接於節點E,電容C2的另一端連接於參考電壓源VLED。One end of the transistor T10 is connected to the voltage source VSS, the other end of the transistor T10 is connected to the node E, and the control end of the transistor T10 receives the control signal S1. One end of the transistor T11 is connected to the node E, the other end of the transistor T11 is connected to the node F, and the control end of the transistor T11 receives the control signal S2. One end of the transistor T12 is connected to the node F, the other end of the transistor T12 is connected to the data input source VDATA, and the control end of the transistor T12 is connected to the node F. One end of the capacitor C2 is connected to the node E, and the other end of the capacitor C2 is connected to the reference voltage source VLED.
請參考第2圖。第2圖是依照本揭示一些實施例所繪示的畫素補償電路100的操作時序200的示意圖。關於第1圖的畫素補償電路100的操作方法將參考第3圖至第7圖進行說明。Please refer to Figure 2. FIG. 2 is a schematic diagram illustrating an
請參考第3圖。第3圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路100於第2圖中的時間區間TP1的操作的示意圖。時間區間TP1係為重置時間區間。於時間區間TP1,控制訊號S1、S2、S4係為低電壓值VGL,而控制訊號S3、S5係為高電壓值VGH,參考電壓源VREF係為高電壓值VREF_H。Please refer to Figure 3. FIG. 3 is a schematic diagram illustrating the operation of the
由於控制訊號S1、S2、S4係為低電壓值VGL,電晶體T3、T7、T9、T10、T11不導通,而電晶體T2、T4和T5導通。電晶體T4和T5導通後,節點A的電壓值為電壓源VSS的電壓值V_SS。由於電壓源VSS的電壓值V_SS係為低電壓值,電晶體T1不導通。此外,由於電晶體T2導通,節點B的電壓值係為低電壓源VL的電壓值V_L。Since the control signals S1 , S2 , and S4 are of low voltage value VGL, the transistors T3 , T7 , T9 , T10 , and T11 are not turned on, while the transistors T2 , T4 and T5 are turned on. After the transistors T4 and T5 are turned on, the voltage value of the node A is the voltage value V_SS of the voltage source VSS. Since the voltage value V_SS of the voltage source VSS is a low voltage value, the transistor T1 is not turned on. In addition, since the transistor T2 is turned on, the voltage value of the node B is the voltage value V_L of the low voltage source VL.
請參考第4圖。第4圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路100於第2圖中的時間區間TP2的操作的示意圖。時間區間TP2係為補償時間區間。於時間區間TP2,控制訊號S1、S3係為高電壓值VGH,控制訊號S2、S4和S5係為低電壓值VGL,參考電壓源VREF係為高電壓值VREF_H。Please refer to Figure 4. FIG. 4 is a schematic diagram illustrating the operation of the
由於控制訊號S2、S4和S5係為低電壓值VGL,電晶體T3、T5、T7、T9、T11不導通。由於控制訊號S1、S3係為高電壓值VGH,電晶體T2、T4、T10導通。由於電晶體T10導通,節點E的電壓值係為電壓源VSS的電壓值V_SS。此時,節點E的電壓值被重置,且電晶體T8導通。此時節點C的電壓值係為電壓源VREF的電壓值VREF_H。節點A和節點D的電壓值係為電壓值VREF_H加上電晶體T6的閾值電壓VTH_T6。此時,電晶體T6對電晶體T1的閾值電壓進行匹配補償。Since the control signals S2, S4 and S5 are at the low voltage value VGL, the transistors T3, T5, T7, T9 and T11 are not turned on. Since the control signals S1 and S3 are high voltage values VGH, the transistors T2, T4 and T10 are turned on. Since the transistor T10 is turned on, the voltage value of the node E is the voltage value V_SS of the voltage source VSS. At this time, the voltage value of the node E is reset, and the transistor T8 is turned on. At this time, the voltage value of the node C is the voltage value VREF_H of the voltage source VREF. The voltage value of the node A and the node D is the voltage value VREF_H plus the threshold voltage VTH_T6 of the transistor T6. At this time, the transistor T6 performs matching compensation for the threshold voltage of the transistor T1.
請參考第5圖。第5圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路100於第2圖中的時間區間TP3的操作的示意圖。時間區間TP3係為補償時間區間。於時間區間TP3,控制訊號S2、S3係為高電壓值VGH,控制訊號S1、S4、S5係為低電壓值VGL,參考電壓源VREF係為高電壓值VREF_H。Please refer to Figure 5. FIG. 5 is a schematic diagram illustrating the operation of the
由於控制訊號S1、S4、S5係為低電壓值VGL,電晶體T3、T5、T7、T10不導通。由於控制訊號S2、S3係為高電壓值VGH,電晶體T4、T9、T11、T12導通。節點C的電壓值係為高電壓源VH的電壓值V_H。電流由節點E流向電壓源VDATA。節點E的電壓值係為電壓源VDATA的電壓值V_DATA加上電晶體T12的閾值電壓VTH_T12。此時,電晶體T12對電晶體T8的閾值電壓進行匹配補償。此外,由於電晶體T2導通,節點B的電壓值係為高電壓源VL的電壓值V_L。Since the control signals S1 , S4 , and S5 are of the low voltage value VGL, the transistors T3 , T5 , T7 , and T10 are not turned on. Since the control signals S2 and S3 are high voltage values VGH, the transistors T4, T9, T11 and T12 are turned on. The voltage value of the node C is the voltage value V_H of the high voltage source VH. Current flows from node E to voltage source VDATA. The voltage value of the node E is the voltage value V_DATA of the voltage source VDATA plus the threshold voltage VTH_T12 of the transistor T12. At this time, the transistor T12 performs matching compensation for the threshold voltage of the transistor T8. In addition, since the transistor T2 is turned on, the voltage value of the node B is the voltage value V_L of the high voltage source VL.
請參考第6圖。第6圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路100於第2圖中的時間區間TP4的操作的示意圖。時間區間TP4係為發光時間區間。Please refer to Figure 6. FIG. 6 is a schematic diagram illustrating the operation of the
於時間區間TP4,控制訊號S4的電壓值係為高電壓值VGH,控制訊號S1、S2、S3、S5的電壓值係為低電壓值VGL。參考電壓源VREF係為低電壓值VREF_L。During the time interval TP4, the voltage value of the control signal S4 is the high voltage value VGH, and the voltage values of the control signals S1, S2, S3, and S5 are the low voltage value VGL. The reference voltage source VREF is a low voltage value VREF_L.
由於控制訊號S1、S2、S3、S5的電壓值係為低電壓值VGL,電晶體T2、T4、T5、T9、T10、T11不導通。由於控制訊號S4的電壓值係為高電壓值VGH,電晶體T3和T7導通。節點B的電壓值由V_L上升至V_SS。由於節點A為浮接,此時節點A的電壓值為V_SS-V_L+VREF_H+VTH_T6。電晶體T1導通。Since the voltage values of the control signals S1 , S2 , S3 , and S5 are the low voltage values VGL, the transistors T2 , T4 , T5 , T9 , T10 , and T11 are not turned on. Since the voltage value of the control signal S4 is the high voltage value VGH, the transistors T3 and T7 are turned on. The voltage value of node B rises from V_L to V_SS. Since node A is floating, the voltage value of node A is V_SS-V_L+VREF_H+VTH_T6 at this time. The transistor T1 is turned on.
電晶體T1導通後,流經發光二極體105的電流值係為0.5k(VREF_H-V_L)2
。After the transistor T1 is turned on, the current value flowing through the light-emitting
由於節點E的電壓值係為V_DATA+VTH_V12,且參考電壓源VREF係為低電壓值VREF_L,電晶體T8導通。電晶體T8導通後,電流由節點C流向參考電壓源VREF。此時流經電晶體T8的電流大小係為0.5k(V_DATA-VREF_L)2 。流經電晶體T8的定電流對節點C進行放電,節點C的電壓值逐漸下降。Since the voltage value of the node E is V_DATA+VTH_V12 and the reference voltage source VREF is the low voltage value VREF_L, the transistor T8 is turned on. After the transistor T8 is turned on, the current flows from the node C to the reference voltage source VREF. At this time, the magnitude of the current flowing through the transistor T8 is 0.5k(V_DATA-VREF_L) 2 . The constant current flowing through the transistor T8 discharges the node C, and the voltage value of the node C gradually decreases.
請參考第7圖。第7圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路100於第2圖中的時間區間TP4的操作的示意圖。接續第6圖的操作。當節點C的電壓值逐漸降低至低於節點D的電壓值減去電晶體T6的閾值電壓VTH_T6時,電晶體T6進入線性區。此時節點A的電壓值等於節點C的電壓值。節點C的電壓值係為V_H減去ΔV。ΔV係為流經電晶體T8的電流對節點C放電使節點C下降的電壓值。Please refer to Figure 7. FIG. 7 is a schematic diagram illustrating the operation of the
於電晶體T6導通後,節點A的電壓值逐漸降低,當節點A的電壓值小於電壓值V_SS加上電晶體T1的閾值電壓VTH_T1時,電晶體T1關閉。After the transistor T6 is turned on, the voltage value of the node A gradually decreases. When the voltage value of the node A is less than the voltage value V_SS plus the threshold voltage VTH_T1 of the transistor T1, the transistor T1 is turned off.
流過電晶體T8的定電流持續對節點C進行放電,直到節點C的電壓值達到VREF_L加上電晶體T8的閾值電壓VTH_T8。The constant current flowing through the transistor T8 continues to discharge the node C until the voltage value of the node C reaches VREF_L plus the threshold voltage VTH_T8 of the transistor T8.
依據上述段落,電壓值V_DATA會影響通過電晶體T8的定電流大小,並進而影響節點A的電壓下降時間。透過控制節點A的電壓下降時間,可控制發光二極體105的灰階。According to the above paragraphs, the voltage value V_DATA will affect the magnitude of the constant current passing through the transistor T8, and further affect the voltage drop time of the node A. By controlling the voltage drop time of the node A, the gray scale of the
請回頭參閱第2圖。於時間區間TP5,控制訊號S1、S2、S4係為低電壓值VGL,而控制訊號S3、S5係為高電壓值VGH,參考電壓源VREF係為高電壓值VREF_H。時間區間TP5與時間區間TP1相同,均為重置時間區間,且時間區間TP5與時間區間TP1的操作相同,在此不再重複敘述。Please refer back to Figure 2. During the time interval TP5, the control signals S1, S2 and S4 are at the low voltage value VGL, the control signals S3 and S5 are at the high voltage value VGH, and the reference voltage source VREF is at the high voltage value VREF_H. The time interval TP5 is the same as the time interval TP1, both are reset time intervals, and the operations of the time interval TP5 and the time interval TP1 are the same, and the description is not repeated here.
於實作上,第1圖中的電晶體T1至T12可以用P型的低溫多晶矽薄膜電晶體來實現,但本實施例並不以此為限。例如,電晶體T1至T12也可以用P型的非晶矽(amorphous silicon)薄膜電晶體來實現。在一些實施方式中,也可以採用N型的薄膜電晶體來實現,本發明不限制所採用的電晶體型態。In practice, the transistors T1 to T12 in FIG. 1 can be implemented by P-type low temperature polysilicon thin film transistors, but this embodiment is not limited to this. For example, the transistors T1 to T12 can also be implemented with P-type amorphous silicon thin film transistors. In some embodiments, N-type thin film transistors can also be used to implement, and the present invention does not limit the type of transistors used.
依據上述段落,於本案的實施方式中,提出一種12T3C的電路架構,其電路架構應用於Mini LED背光面板。於本案的實施方式中,透過定電流放電決定發光二極體的發光時間以控制發光二極體的灰階,並透過減少發光路徑上的電晶體個數可將低電路所需的VDD-VSS跨壓,以令發光二極體達到最高發光效率並降低功率消耗。此外,透過對電晶體的閾值電壓變異以及VSS的IR升高進行補償,可令發光電流的大小更精準。According to the above paragraphs, in the embodiments of the present application, a 12T3C circuit structure is proposed, and the circuit structure is applied to the Mini LED backlight panel. In the embodiment of this case, the light-emitting time of the light-emitting diode is determined by constant current discharge to control the gray scale of the light-emitting diode, and the VDD-VSS required by the circuit can be reduced by reducing the number of transistors on the light-emitting path. Overvoltage, so that the light-emitting diode can achieve the highest luminous efficiency and reduce power consumption. In addition, by compensating for the variation of the threshold voltage of the transistor and the increase of the IR of the VSS, the magnitude of the light-emitting current can be made more precise.
雖然本揭示已以實施方式揭露如上,然其並非用以限定本揭示,任何本領域具通常知識者,在不脫離本揭示之精神和範圍內,當可作各種之更動與潤飾,因此本揭示之保護範圍當視後附之申請專利範圍所界定者為準。Although the present disclosure has been disclosed as above in embodiments, it is not intended to limit the present disclosure. Anyone with ordinary knowledge in the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. The scope of protection shall be determined by the scope of the appended patent application.
100:畫素補償電路 105:發光二極體 110:驅動單元 130:下拉單元 150:重置單元 170:控制單元 190:資料寫入單元 T1,T2,T3,T4,T5,T6,T7,T8,T9,T10,T11,T12:電晶體 C1,C2,C3:電容 S1,S2,S3,S4,S5:控制訊號 A,B,C,D,E,F:節點 VL:電壓源 VH:電壓源 VSS:電壓源 VDD:電壓源 VLED:電壓源 VDATA:電壓源 VREF:電壓源 200:操作時序 TP1,TP2,TP3,TP4,TP5:時間區間 VREF_H,VREF_L:電壓值 VGH,VGL:電壓值100: pixel compensation circuit 105: Light Emitting Diodes 110: Drive unit 130: Pull down unit 150: Reset Unit 170: Control Unit 190:Data writing unit T1,T2,T3,T4,T5,T6,T7,T8,T9,T10,T11,T12: Transistor C1, C2, C3: Capacitors S1, S2, S3, S4, S5: control signal A,B,C,D,E,F: Nodes VL: voltage source VH: Voltage source VSS: Voltage Source VDD: voltage source VLED: Voltage source VDATA: voltage source VREF: Voltage source 200: Operation timing TP1,TP2,TP3,TP4,TP5: time interval VREF_H, VREF_L: Voltage value VGH, VGL: voltage value
為讓本揭示之上述和其他目的、特徵、優點與實施例能夠更明顯易懂,所附圖式之說明如下: 第1圖是依照本揭示一些實施例所繪示的啟動系統的示意圖; 第2圖是依照本揭示一些實施例所繪示的畫素補償電路的操作時序的示意圖; 第3圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路於第2圖中的時間區間的操作的示意圖; 第4圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路於第2圖中的時間區間的操作的示意圖; 第5圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路於第2圖中的時間區間的操作的示意圖; 第6圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路於第2圖中的時間區間的操作的示意圖;以及 第7圖是依照本揭示一些實施例所繪示的第1圖中的畫素補償電路於第2圖中的時間區間的操作的示意圖。In order to make the above and other objects, features, advantages and embodiments of the present disclosure more clearly understood, the accompanying drawings are described as follows: FIG. 1 is a schematic diagram of a startup system according to some embodiments of the present disclosure; FIG. 2 is a schematic diagram illustrating the operation timing of the pixel compensation circuit according to some embodiments of the present disclosure; FIG. 3 is a schematic diagram illustrating the operation of the pixel compensation circuit in FIG. 1 in the time interval of FIG. 2 according to some embodiments of the present disclosure; FIG. 4 is a schematic diagram illustrating the operation of the pixel compensation circuit in FIG. 1 in the time interval of FIG. 2 according to some embodiments of the present disclosure; FIG. 5 is a schematic diagram illustrating the operation of the pixel compensation circuit in FIG. 1 in the time interval of FIG. 2 according to some embodiments of the present disclosure; 6 is a schematic diagram illustrating the operation of the pixel compensation circuit in FIG. 1 during the time interval in FIG. 2 according to some embodiments of the present disclosure; and FIG. 7 is a schematic diagram illustrating the operation of the pixel compensation circuit in FIG. 1 in the time interval of FIG. 2 according to some embodiments of the present disclosure.
100:畫素補償電路100: pixel compensation circuit
105:發光二極體105: Light Emitting Diodes
110:驅動單元110: Drive unit
130:下拉單元130: Pull down unit
150:重置單元150: Reset Unit
170:控制單元170: Control Unit
190:資料寫入單元190:Data writing unit
T1,T2,T3,T4,T5,T6,T7,T8,T9,T10,T11,T12:電晶體T1,T2,T3,T4,T5,T6,T7,T8,T9,T10,T11,T12: Transistor
C1,C2,C3:電容C1, C2, C3: Capacitors
S1,S2,S3,S4,S5:控制訊號S1, S2, S3, S4, S5: control signal
A,B,C,D,E,F:節點A,B,C,D,E,F: Nodes
VL:電壓源VL: voltage source
VH:電壓源VH: Voltage source
VSS:電壓源VSS: Voltage Source
VDD:電壓源VDD: voltage source
VLED:電壓源VLED: Voltage source
VDATA:電壓源VDATA: voltage source
VREF:電壓源VREF: Voltage source
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110397462.1A CN113053303B (en) | 2020-06-10 | 2021-04-13 | Pixel compensation circuit |
US17/237,794 US11170706B1 (en) | 2020-06-10 | 2021-04-22 | Pixel compensation circuit |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063037293P | 2020-06-10 | 2020-06-10 | |
US63/037,293 | 2020-06-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202147288A true TW202147288A (en) | 2021-12-16 |
TWI762137B TWI762137B (en) | 2022-04-21 |
Family
ID=80681306
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109142175A TWI754478B (en) | 2020-06-10 | 2020-12-01 | Pixel circuit |
TW109145074A TWI742967B (en) | 2020-06-10 | 2020-12-18 | Pixel driving circuit |
TW109145078A TWI742968B (en) | 2020-06-10 | 2020-12-18 | Pixel driving circuit |
TW109145315A TWI749958B (en) | 2020-06-10 | 2020-12-21 | Pixel driving circuit |
TW109147231A TWI762137B (en) | 2020-06-10 | 2020-12-31 | Pixel compensation circuit |
TW110106520A TWI762212B (en) | 2020-06-10 | 2021-02-24 | Pixel driving device |
TW110111217A TWI765627B (en) | 2020-06-10 | 2021-03-26 | Pixel driving device |
Family Applications Before (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109142175A TWI754478B (en) | 2020-06-10 | 2020-12-01 | Pixel circuit |
TW109145074A TWI742967B (en) | 2020-06-10 | 2020-12-18 | Pixel driving circuit |
TW109145078A TWI742968B (en) | 2020-06-10 | 2020-12-18 | Pixel driving circuit |
TW109145315A TWI749958B (en) | 2020-06-10 | 2020-12-21 | Pixel driving circuit |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110106520A TWI762212B (en) | 2020-06-10 | 2021-02-24 | Pixel driving device |
TW110111217A TWI765627B (en) | 2020-06-10 | 2021-03-26 | Pixel driving device |
Country Status (1)
Country | Link |
---|---|
TW (7) | TWI754478B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115565491B (en) * | 2022-10-31 | 2024-10-01 | 业成光电(深圳)有限公司 | Pixel circuit with wave width compensation and operation method thereof |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101125571B1 (en) * | 2010-02-05 | 2012-03-22 | 삼성모바일디스플레이주식회사 | Pixel, display device and driving method thereof |
KR101881853B1 (en) * | 2012-02-29 | 2018-07-26 | 삼성디스플레이 주식회사 | Emission driving unit, emission driver and organic light emitting display device having the same |
US9119250B2 (en) * | 2012-05-04 | 2015-08-25 | Osram Sylvania Inc. | Dimmable multichannel driver for solid state light sources |
KR20140022671A (en) * | 2012-08-14 | 2014-02-25 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
JP5880467B2 (en) * | 2013-02-04 | 2016-03-09 | ソニー株式会社 | Comparator device, display device and driving method thereof |
KR102033611B1 (en) * | 2013-02-25 | 2019-10-18 | 삼성디스플레이 주식회사 | Pixel, display device including the same and method therof |
CN104252847B (en) * | 2013-06-25 | 2016-12-07 | 施耐德电器工业公司 | Light emitting module and control method thereof |
CN104103239B (en) * | 2014-06-23 | 2016-05-04 | 京东方科技集团股份有限公司 | Organic light-emitting diode pixel circuit and driving method thereof |
TWI527012B (en) * | 2014-07-03 | 2016-03-21 | 友達光電股份有限公司 | Pixel circuit of light-emitting diode and driving method thereof |
KR102241704B1 (en) * | 2014-08-07 | 2021-04-20 | 삼성디스플레이 주식회사 | Pixel circuit and organic light emitting display device having the same |
CN105139804B (en) * | 2015-09-28 | 2018-12-21 | 京东方科技集团股份有限公司 | A kind of pixel-driving circuit, display panel and its driving method and display device |
KR102432801B1 (en) * | 2015-10-28 | 2022-08-17 | 삼성디스플레이 주식회사 | Pixel of an organic light emitting display device, and organic light emitting display device |
CN105682295B (en) * | 2016-03-21 | 2017-07-28 | 上海东软载波微电子有限公司 | Led control circuit |
CN106097964B (en) * | 2016-08-22 | 2018-09-18 | 京东方科技集团股份有限公司 | Pixel circuit, display panel, display equipment and driving method |
KR102597588B1 (en) * | 2016-11-23 | 2023-11-02 | 엘지디스플레이 주식회사 | Display device and degradation compensation method of the same |
CN107068066A (en) * | 2017-06-22 | 2017-08-18 | 京东方科技集团股份有限公司 | Pixel compensation circuit and display device, driving method |
TWI649741B (en) * | 2018-01-30 | 2019-02-01 | 友達光電股份有限公司 | Threshold voltage compensation circuit and display panel |
TWI639149B (en) * | 2018-03-09 | 2018-10-21 | 友達光電股份有限公司 | Pixel circuit |
KR102498084B1 (en) * | 2018-06-01 | 2023-02-10 | 삼성전자주식회사 | Display panel |
TWI662530B (en) * | 2018-06-08 | 2019-06-11 | 友達光電股份有限公司 | Light-emitting diode apparatus and controlling method thereof |
TWI694433B (en) * | 2018-06-27 | 2020-05-21 | 友達光電股份有限公司 | Pixel circuit |
KR102733928B1 (en) * | 2018-07-31 | 2024-11-22 | 엘지디스플레이 주식회사 | Gate driver and electroluminescence display device using the same |
TWI671729B (en) * | 2018-09-04 | 2019-09-11 | 友達光電股份有限公司 | Pixel circuit and operating method thereof |
CN209693094U (en) * | 2018-10-16 | 2019-11-26 | 欧普照明股份有限公司 | Signal integration circuit and signal monitoring circuit |
CN110249378B (en) * | 2018-11-30 | 2022-05-31 | 京东方科技集团股份有限公司 | Pixel circuit, driving method and display device |
CN210042297U (en) * | 2018-12-15 | 2020-02-07 | 深圳和而泰智能照明有限公司 | Lighting circuit |
TWI685832B (en) * | 2019-01-15 | 2020-02-21 | 友達光電股份有限公司 | Pixel driving circuit and the operating method thereof |
-
2020
- 2020-12-01 TW TW109142175A patent/TWI754478B/en active
- 2020-12-18 TW TW109145074A patent/TWI742967B/en active
- 2020-12-18 TW TW109145078A patent/TWI742968B/en active
- 2020-12-21 TW TW109145315A patent/TWI749958B/en active
- 2020-12-31 TW TW109147231A patent/TWI762137B/en active
-
2021
- 2021-02-24 TW TW110106520A patent/TWI762212B/en active
- 2021-03-26 TW TW110111217A patent/TWI765627B/en active
Also Published As
Publication number | Publication date |
---|---|
TWI754478B (en) | 2022-02-01 |
TWI742968B (en) | 2021-10-11 |
TW202147286A (en) | 2021-12-16 |
TWI765627B (en) | 2022-05-21 |
TWI742967B (en) | 2021-10-11 |
TWI749958B (en) | 2021-12-11 |
TW202147285A (en) | 2021-12-16 |
TWI762212B (en) | 2022-04-21 |
TW202147289A (en) | 2021-12-16 |
TW202147918A (en) | 2021-12-16 |
TW202147284A (en) | 2021-12-16 |
TW202147290A (en) | 2021-12-16 |
TWI762137B (en) | 2022-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI699742B (en) | Pixel circuit | |
CN113053303B (en) | Pixel compensation circuit | |
TWI716160B (en) | Pixel circuit | |
WO2018152896A1 (en) | Oled pixel drive circuit and method | |
CN110349534B (en) | Pixel circuit and driving method thereof | |
TWI708233B (en) | Pixel circuit for low frame rate and display device having the same | |
CN111583857B (en) | Pixel driving circuit, driving method thereof and display panel | |
CN111833790A (en) | Display device and driving method thereof | |
CN110070826B (en) | pixel circuit | |
US12087241B2 (en) | Light emitting circuit having bistable circuit module for changing potential of gate of driving transistor, backlight module and display panel | |
CN110070825B (en) | pixel circuit | |
TWI762137B (en) | Pixel compensation circuit | |
CN109493789B (en) | pixel circuit | |
CN113129805B (en) | Pixel circuit and display panel | |
TWI827311B (en) | Pixel circuit and display panel | |
TWI694431B (en) | Pixel circuit and display device | |
TWI780635B (en) | Display pannel and pixel circuit | |
TWI765771B (en) | Pixel circuit and display panel of self-compensation | |
CN112270909B (en) | Pixel driving circuit | |
TWI802215B (en) | Driving circuit | |
CN113077753B (en) | Pixel drive circuit | |
CN113077752B (en) | Pixel driving circuit | |
CN110264959A (en) | Display panel | |
CN113077754B (en) | Pixel drive circuit | |
CN118015980A (en) | Driving circuit |