TWI366701B - Method of manufacturing display and television - Google Patents
Method of manufacturing display and televisionInfo
- Publication number
- TWI366701B TWI366701B TW094101553A TW94101553A TWI366701B TW I366701 B TWI366701 B TW I366701B TW 094101553 A TW094101553 A TW 094101553A TW 94101553 A TW94101553 A TW 94101553A TW I366701 B TWI366701 B TW I366701B
- Authority
- TW
- Taiwan
- Prior art keywords
- television
- manufacturing display
- manufacturing
- display
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004017675 | 2004-01-26 | ||
| JP2004017694 | 2004-01-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200528825A TW200528825A (en) | 2005-09-01 |
| TWI366701B true TWI366701B (en) | 2012-06-21 |
Family
ID=34797799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094101553A TWI366701B (en) | 2004-01-26 | 2005-01-19 | Method of manufacturing display and television |
Country Status (4)
| Country | Link |
|---|---|
| US (3) | US7365805B2 (zh) |
| KR (2) | KR101379667B1 (zh) |
| CN (1) | CN100437976C (zh) |
| TW (1) | TWI366701B (zh) |
Families Citing this family (44)
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| JP4731913B2 (ja) * | 2003-04-25 | 2011-07-27 | 株式会社半導体エネルギー研究所 | パターンの形成方法および半導体装置の製造方法 |
| WO2005071756A1 (en) * | 2004-01-26 | 2005-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, television set, and method for manufacturing the same |
| TWI366701B (en) * | 2004-01-26 | 2012-06-21 | Semiconductor Energy Lab | Method of manufacturing display and television |
| US7691685B2 (en) * | 2004-01-26 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| CN100533808C (zh) * | 2004-01-26 | 2009-08-26 | 株式会社半导体能源研究所 | 显示器件及其制造方法以及电视设备 |
| CN100565307C (zh) * | 2004-02-13 | 2009-12-02 | 株式会社半导体能源研究所 | 半导体器件及其制备方法，液晶电视系统，和el电视系统 |
| US7462514B2 (en) | 2004-03-03 | 2008-12-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same, liquid crystal television, and EL television |
| US20050196710A1 (en) * | 2004-03-04 | 2005-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television apparatus |
| US7615488B2 (en) * | 2004-03-19 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device and method for manufacturing the same, and television device |
| US7642038B2 (en) * | 2004-03-24 | 2010-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming pattern, thin film transistor, display device, method for manufacturing thereof, and television apparatus |
| US8158517B2 (en) * | 2004-06-28 | 2012-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing wiring substrate, thin film transistor, display device and television device |
| US7888702B2 (en) * | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
| JP2006352083A (ja) * | 2005-05-18 | 2006-12-28 | Ricoh Co Ltd | 有機薄膜トランジスタ及びアクティブマトリックス表示装置 |
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| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| TWI521292B (zh) * | 2007-07-20 | 2016-02-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
| JP2009049384A (ja) | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| US7897971B2 (en) * | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP5056265B2 (ja) | 2007-08-15 | 2012-10-24 | ソニー株式会社 | 表示装置および電子機器 |
| JP5395384B2 (ja) * | 2007-09-07 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
| US8083956B2 (en) | 2007-10-11 | 2011-12-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
| JP5292066B2 (ja) | 2007-12-05 | 2013-09-18 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP5409024B2 (ja) * | 2008-02-15 | 2014-02-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP5376723B2 (ja) * | 2008-06-09 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
| KR101644406B1 (ko) * | 2008-09-12 | 2016-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2011010542A1 (en) * | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101672072B1 (ko) | 2009-09-04 | 2016-11-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
| TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
| US8476744B2 (en) | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
| TWI424392B (zh) * | 2010-01-29 | 2014-01-21 | Prime View Int Co Ltd | 主動元件陣列基板及使用其之平面顯示器 |
| US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
| KR20250009548A (ko) * | 2012-05-10 | 2025-01-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TWI483036B (zh) * | 2012-11-19 | 2015-05-01 | Au Optronics Corp | 陣列基板及其製作方法 |
| KR20140090019A (ko) * | 2013-01-08 | 2014-07-16 | 삼성디스플레이 주식회사 | 표시 장치 |
| KR102401724B1 (ko) * | 2015-04-30 | 2022-05-25 | 삼성디스플레이 주식회사 | 미세 전극 형성 방법 |
| CN105514534B (zh) * | 2016-01-04 | 2018-01-05 | 中国人民解放军空军工程大学 | 一种基于层叠三维人工手征超材料的多频圆极化器 |
| GB2556313B (en) * | 2016-02-10 | 2020-12-23 | Flexenable Ltd | Semiconductor patterning |
| KR101827154B1 (ko) * | 2016-10-13 | 2018-02-07 | 현대자동차주식회사 | 도전성 잉크에 의한 3차원 곡면기판 코팅 방법 및 그 장치 |
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| KR101146208B1 (ko) | 2003-11-14 | 2012-05-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 표시 장치 및 그 제조 방법 |
| JP3945475B2 (ja) | 2003-12-01 | 2007-07-18 | セイコーエプソン株式会社 | メンテナンス装置およびこれを備えた描画装置 |
| US8053171B2 (en) * | 2004-01-16 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Substrate having film pattern and manufacturing method of the same, manufacturing method of semiconductor device, liquid crystal television, and EL television |
| TWI366701B (en) | 2004-01-26 | 2012-06-21 | Semiconductor Energy Lab | Method of manufacturing display and television |
| CN100533808C (zh) * | 2004-01-26 | 2009-08-26 | 株式会社半导体能源研究所 | 显示器件及其制造方法以及电视设备 |
| CN100565307C (zh) * | 2004-02-13 | 2009-12-02 | 株式会社半导体能源研究所 | 半导体器件及其制备方法，液晶电视系统，和el电视系统 |
-
2005
- 2005-01-19 TW TW094101553A patent/TWI366701B/zh not_active IP Right Cessation
- 2005-01-21 US US11/038,212 patent/US7365805B2/en active Active
- 2005-01-26 KR KR1020050007167A patent/KR101379667B1/ko not_active IP Right Cessation
- 2005-01-26 CN CNB2005100518469A patent/CN100437976C/zh not_active Expired - Fee Related
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2008
- 2008-04-09 US US12/100,083 patent/US7732818B2/en not_active Expired - Fee Related
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2010
- 2010-06-01 US US12/791,014 patent/US7993993B2/en not_active Expired - Fee Related
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2011
- 2011-10-04 KR KR1020110100861A patent/KR101193417B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110116108A (ko) | 2011-10-25 |
| US7993993B2 (en) | 2011-08-09 |
| CN100437976C (zh) | 2008-11-26 |
| TW200528825A (en) | 2005-09-01 |
| US20050164423A1 (en) | 2005-07-28 |
| CN1677645A (zh) | 2005-10-05 |
| KR20050077037A (ko) | 2005-07-29 |
| KR101193417B1 (ko) | 2012-10-24 |
| US7732818B2 (en) | 2010-06-08 |
| US20080199992A1 (en) | 2008-08-21 |
| US20100240157A1 (en) | 2010-09-23 |
| US7365805B2 (en) | 2008-04-29 |
| KR101379667B1 (ko) | 2014-04-01 |
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