TWI257142B - Gallium nitride materials and methods - Google Patents
Gallium nitride materials and methodsInfo
- Publication number
- TWI257142B TWI257142B TW90130606A TW90130606A TWI257142B TW I257142 B TWI257142 B TW I257142B TW 90130606 A TW90130606 A TW 90130606A TW 90130606 A TW90130606 A TW 90130606A TW I257142 B TWI257142 B TW I257142B
- Authority
- TW
- Taiwan
- Prior art keywords
- gallium nitride
- nitride material
- semiconductor materials
- material layer
- methods
- Prior art date
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US6956250B2 (en) * | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
JP2004140339A (ja) * | 2002-09-25 | 2004-05-13 | Univ Chiba | 窒化物系ヘテロ構造を有するデバイス及びその製造方法 |
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2000
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103094296A (zh) * | 2013-01-23 | 2013-05-08 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
CN103094296B (zh) * | 2013-01-23 | 2015-09-23 | 豪威科技(上海)有限公司 | 背照式cmos影像传感器及其制造方法 |
TWI742828B (zh) * | 2020-09-01 | 2021-10-11 | 合晶科技股份有限公司 | 可降低應力的氮化鎵磊晶片 |
TWI798716B (zh) * | 2021-06-09 | 2023-04-11 | 合晶科技股份有限公司 | 基板加工方法及形成於基板上之電晶體結構 |
TWI843227B (zh) * | 2021-10-14 | 2024-05-21 | 美商應用材料股份有限公司 | 用於GaN生長的半導體處理方法與半導體結構 |
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