TW308705B - - Google Patents
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- Publication number
- TW308705B TW308705B TW085106244A TW85106244A TW308705B TW 308705 B TW308705 B TW 308705B TW 085106244 A TW085106244 A TW 085106244A TW 85106244 A TW85106244 A TW 85106244A TW 308705 B TW308705 B TW 308705B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- gas
- lock chamber
- pump
- semiconductor
- Prior art date
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- 239000007789 gas Substances 0.000 claims description 55
- 238000012545 processing Methods 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 12
- 238000009423 ventilation Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 2
- DGJPLFUDZQEBFH-UHFFFAOYSA-N argon xenon Chemical compound [Ar].[Xe] DGJPLFUDZQEBFH-UHFFFAOYSA-N 0.000 claims 1
- 210000003437 trachea Anatomy 0.000 claims 1
- 239000002245 particle Substances 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 13
- 238000009833 condensation Methods 0.000 description 9
- 230000005494 condensation Effects 0.000 description 9
- 229910052788 barium Inorganic materials 0.000 description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 7
- 238000002955 isolation Methods 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 238000005273 aeration Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/042—Preparation of foundation plates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/184—Vacuum locks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
經濟部中央標準局員工消費合作社印製 A 7 B7 五、發明説明(1 ) 本發明係關於一棰半導體元件之製造装置,且尤指一 種使用真空条統之半導饈元件裂造装置。 在採用一使用真空条統之半導體元件製造裝置的半導 體元件製程中,顆粒會於處理室之壓降(泵降)期間形成 且所形成之顆粒及沈積在該處理室中進行處理之晶圖上。 此棰半導體晶藺之顆粒污染將顯著降低半導體元件之產品 產置及可靠度。此問題隨著遞增之晶画直徑及較高之整合 位準而變得更形嚴重。 鼷降或通氣期間之顆粒形成係歸因於氣體絕熱膨脹所 造成之冷凝機制(參攪1993年5月之” Condensation-induced Particle Formation during Vacuun Pubp Down By Yan Y e et a 1. , Journal of the E1ectrochen i ca1 Society, Vol.140, No.5, pp.1463-1468)。依據所提議 之機制,藉著一處理室中之壓力之快速降低,該處理室中 之氣驩受到絕熱膨脹且其溫度快速下降。氣饅同時冷凝成 液滴。在液滾形成期間,空氣中之此類氣醱例如S0a, 〇3, H»〇及其他氣體雜質即擴散至液滴内且因此被吸收。接箸 ,因室壁之熱容量大於液滴者,所以室之内表面溫度較液 滴者下降更緩慢。所造成之溫差使熱量由室傳送液滴,導 致液滴之加熱與蒸發,使得液體中之雜質濃度增加。在澹 縮液相期間,當液體中之H80之濃度足夠高時,Ha〇a即迅 速與S0a反應Μ形成碕酸,導致硫酸液滴之形成。當液滴 持繙蒸發時,即形成球狀且主含硫酸之殘餘顆粒。殘餘顆 粒之主要基本成分為磺,硫及氣*且殘餘顆粒在熱力方面 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X2W公釐) ------..--—---I---ΐτ------# (請先閱讀背面之注意事項再填寫本頁) 4 經濟部中央榡準局員Η消費合作杜印製 A7 B7 一 - - 五、發明説明(2 ) 相當穩定。因此,殘餘顆粒無法完全蒸發卽使加熱至高達 18〇·〇之溫度時亦然。 當處理室較小時,氣體之相對源度愈高且择壓速度或 通氣速度愈高*可發現更多之冷凝慼應顆粒。 第1圖爲一使用真空条統之傳統半導體元件製造裝置 中之離子植入装置之示意圖。此處,參考號碼10指示一處 理室用Μ在其内將離子植入至一半導體晶鬮中;參考號碼 20指示兩載入鎖定室其與處理室10之預定部分連通,俥於 其内載入即將傳送至處理室之晶參考號碼30指示一装 設於處理室10與每一載入播定室20之間的隔離閥Μ決定將 «理室10與載入鎖定室20隔離;參考號碼40指示一泵俾降 低載入錤定室20之壓力而將晶園傳送至真空中之處理室10 内;參考號碼50指示一排氣管其具有兩組連至各別載人鎖 定室20之副管件Α及一主管件Β而該主管件之一端連至副 管件A且另一端則連至泵40; Μ及參考號碼60指示一裝設 在副管件Α之一預定部分中之關閉閥,俥決定鼷閉氣體由 載入鎖定室20流至泵40。 第1圖之裝置中,一空氣閥(其視氣體蹏力而開與閉 )經常係充作關閉閥60之用。主管件B之直徑乃大於副管 件A者,此因由載入蹟定室20流出之氣鼸係收集於並通過 主管件B之故。另,參考號碼70指示一入口俥將通氣氣體 注入載入鎖定室20内。 使用真空糸統之傳統半導體元件製造装置現將參看第 1圖加以說明。 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X297公釐〉 ---------1¾衣---^----·玎 (請先閱讀背面之注意事項再填寫本頁) 5 308705 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明(3 ) 裝設於關閉閥60與泵40之間的排氣管50係維持在約 1〇-3托(Torr)之低真空。接著晶圖載入於載入鎖定室20内 ,且關閉閥60開啟以將載入鎖定室20之壓力降至約ΙΟ-3托 。接著,晶圓藉著開啟隔離閬30而傳送至處理室10。此處 ,處理室10處於約10〃托之高真空。 載入鎖定室20係設定為較低之真空使得氣體之一突發 之擾流可被防止且籍著減低處理室10之高真空與載入鋇定 室20之大氣壓間之差異的方式於晶國傳送至處理室10之前 即初步地減少顆粒。 第2圖爲充作一關閉閥用之空氣閥60之截面放大視圖 。此處參考號碼100為一圓柱外毅其侧部與基部上具有孔 洞;參考號碼200指示一板件其裝設於外殻100内側之一預 定部分中Μ將該外毅分成一上部及一下部並具有一孔洞侔 於中心處連通下部與上部;參考號碼300指示一風箱其環 繞孔洞並固定至板件200處Μ藉板件之下表面加Μ密封且 於其下端部具有一 0形環以開啟及關閉外毅1〇〇之基部孔 洞;參考號碼500指示一彈性橡穋箱其装設至外殼1〇〇之内 部上表面之上並朝外殻1〇〇之下部凸出;參考號碼600指示 一彌性支持件其固定至橡穋箱500之凸表面處,該支持件 之部分係揷入板件200之孔洞中;參考號碼700指示一揮簧 ,其一端固定至風箱300之基部而另一端則固定至揮性支 持件600 ;參考號碼800指示一空氣入口其與板件200形成 之外殼100之上部的一侧相連通;Μ及參考號碼900指示由 載入鎖定室20至泵40 (第1圖)之氣體流動。假設由空氣 (請先閱讀背面之注意事項再本頁) 裝 、1Τ 線 本紙張尺度適用中國國家標準(CNS ) Α4規格(21〇>< 297公釐) mmmrnm Μ Β7 經濟部中央標準局員工消費合作杜印裝 五、發明説明(4 ) 入口 800注入之空氣壓力低於一預定值時,外殼100之下孔 洞即轉風箱300加以閉合。假設空氣壓力大於或等於預定 壓力時,橡膠箱500之凸端部即朝上推起,垂直收縮風箱 300以及因此開啟外殼1〇〇之下孔洞。因下孔洞被快速開啟 ,載入鎖定室20之壓力亦快速下降。 第3圖顯示載入鎖定室20中所形成之顆粒之電子顯撤 分光(SEM〉照片。顆粒直徑約為0.3-3 ·7ίΐιιι且形狀為球形。 第4園揭示藉著俄歇(AugeiOlg子光道學(AES)分析第 3圈之頼粒成分所獲致之結果。 如上所述,在使用真空糸統之傳統半導體元件製造裝 置中,如Yan Ye et al建議者*在分析載入鎖定室中產生 之顆粒形狀與成分時可發現氣膿冷凝為顆粒形成之因。換 言之,酋装設在排氣管上用以排出載入鋇定室之氣體的關 閉《快速開啟時,載入鎖定室之壓力即迅速下降。因此, 顆粒形成係歸因於載入鋇定室中之氣鼸的絕熱膨脹。 藉著以上之相同機制,通氣氣體之絕熱膨脹於載入鋇 定室之通氣期間可產生顆粒。 本發明之目的係提供一半導饈元件製迨裝置其可藉著 防止載入鎖定室中之氣鰌的絕熱膨脹而減少冷凝慼應之顆 粒形成。 為逹成以上目的之一觀黏,係提供本發明之一第一實 施例之半導醱元件製造裝置,包含:一處理室俥於其内製 迪一半導醱元件,一載入鎖定室與處理室之一預定部分連 通俾於其内載入一即將傳送至處理室之半導體晶画;一泵 (靖先閱讀背面之注意事嘎再 ?本頁) * 本纸張尺度適用中國國家標準(CNS ) Λ4規格(210x_297公釐) 7 308705 A7 B7 五、發明説明(5 ) 經濟部中央標準局員工消費合作社印製 俥降低載入鎖定室之壓力;一排氣管其連接載入鎖定室與 泵,俾排出載入鎖定室之氣體;Μ及一閥其裝設於排氣管 之一預定部分中,其中閥為一通氣速度控制俾控制由載入 親定室流至泵之氣體速度。 為達成Μ上目的之另一觀點,係提供本發明之一第二 實施例之半導體元件製造裝置,包含:一處理室俾於其内 製造一半導體元件;一載入鎖定室與處理室連通俾於其内 載入一即將傅送至處理室之半導龌晶圔;Μ及一通氣氣體 入口俾將通氣氣齷注入載入鎖定室,其中通氣氣體入口設 有一裝設在一預定部分中之熱源侔加熱注入至載入鎖定室 之通氣氣體。 爲達成以上目的之又一觀點,係提供本發明之一第三 實施例之半導體元件製造装置,包含:一處理室俾於其内 裂造一半導醱元件,多數組載入鎖定室其與處理室之預定 部分相連通俾於其内載入邸將傳送至處理室之半導體晶圓 ;一泵俥降低多數組載入錤定室之壓力;一排氣管其連接 載入鎖定室與泵俥排出載入錤定室之氣體,排氣管包含多 數侮副管件而每一副管件均連至每一載入鎖定室,Μ及一 主管件其具有一預定部分而該預定部分之直徑與其他部分 者不同,該主管件之一端連至多數鶴副管件而其另一端則 連至泵;Μ及一閥其装設於排氣管之一預定部分內。 本發明之Μ上目的及優點將藉著詳細說明較佳實施例 並參考隨附圖式而變得更為明顯,其中: 第1圖係使用真空糸統之傅統半導龌元件製造装置之 (請先W讀背面之注意事項再ί?,:本頁) -裝 訂 線 本紙張尺度適用中國國家標準(CNS ) Α4規格(210X 297公釐) -8 - 8 Α7 Β7 經濟部中央標準局員工消費合作社印製 五、發明説明(6 ) 示意視圃; 第2圓係充作第1圖之一闋閉閥用之空氣閥之示意視 圖; 第3圈顯示第1圔之載入鎖定室中產生之顆粒之SEM 照片; 第4圖顯示第3圖之顆粒成分之AES分析結果; 第5圖係本發明之一實施例之半導饑元件裂造裝置之 不意視顧; 第6匾係充作第5圔所示之通氣速度控制闕用之節流 閥之示意視圃; 第7圖係本發明之一第二實施例之半導驩元件製造裝 置之示意視圖;Μ及 第8圖係本發明之一第三實施例之半導《元件製造装 置之示意視圖。 奮旃例1 第5圈係本發明第一實施例之半導《元件製造装置, 尤指一離子植入裝置之示意視圖。此處,一參考號碼11指 示一處理室俾於其内将離子植入一半導體晶圓;參考號碼 21指示多數組,例如,兩組載入鎖定室,其與處理室11之 預定部分相連俾於其内載入卽將傳送至處理室之半導髓晶 參考號碼31指示一隔離闕其設於處理室11與每一載入 鎖定室21之間俾決定處理室11與載入鎖定室21之隔離;參 考號碼41指示一泵侔降低載入鎖定室21之壓力Μ便將晶圔 由載入鎖定室21傅送至真空之處理室11處;參考號碼51指 裝 訂 务 (請先閣讀背面之注意事項再....本頁) 本紙張尺度適用中國國家標準(CNS ) Λ4規格(210Χ297公釐) 9 Α7 Β7 五、發明説明(7 ) 示一排氣管其具有多數個(例如兩値)副管件C而每一副 管件均連至每一載入鎖定室21,及一主管件D其一端連至 副管件C且其另一端連至泵41;參考號碼61指示一通氣速 度控制閥其裝設至排氣管51俾藉著控制其銪啟來控制由載 入鏆定室21至泵41之氣體流動速度;Μ及參考號碼71指示 一通氣氣體入口侔將通氣氣體注入每一載入鎖定室21。 較宜地,主管件D之直徑大於副管件C之直徑,此因 由載入鋇定室21滾出之氣體係聚集於並通過主管件D之故 。此外,一節滾閥可充作通氣速度控制閥61。 依據實施例,冷凝感應之顆粒形成可藉箸以通氣速度 控制閥61摄定提升通氣速度之方式加Μ減低,Μ及因此防 止載入鋇定室21之快速壓降所造成之氣龌的絕熱膨脹。此 外,冷凝感應顆粒形成亦可藉箸在通氣氣體入口之一預定 部分中提供一加熱源(例如一加熱線)Μ加熱於一通氣程 序期間注入之氣《,且因此降低其相對濕度的方式而減低 〇 經濟部中央標準局員工消費合作社印裝 第6圖係一充作通氣速度控制閥61之用的節流閥之示 意視圖。此處,參考號碼101指示一画柱外殻其側邊具有 孔洞而經由該等孔洞,圖柱外殻101可連至第5圖之排氣 管51;參考號碼201指示一碟片狀轉盤俾將外殼101分成左 部輿右部;Μ及參考號碼301指示一轉軸其藉一馬達(未 顯示)加Μ旋轉並與轉盤201結合Μ便垂直穿過外殼101並 通過轉盤201之中心。因此,轉盤20籍著轉軸301之轉動而 Μ轉軸為一軸進行轉動,Μ及由載入錤定室21滾至泵41 ( 10 (請先鬩讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標隼(CNS ) Α4規格(2]〇Χ2*ί7公釐) Α7 Β7 308705 五、發明説明(8) 第5圈)之氣體速度相鼷於轉動之程度。 窗掄例2 第7圖係本發明一第二實施例之半導髏元件製造裝置 ,尤指離子植入装置之示意視圏。第5圈之類似參考號碼 指示相同之元件。參考號碼61A指示一關閉閥其裝設於副 管件C之一預定部分中》俾決定由載入鎖定室21至泵41之 氣體流動之關閉。一空氣閥,例如,可充作一關閉閥之用 。參考號碼Μ指示一加熱源其裝設於通氣氣體入口 71之一 預定部分内。一加熱線,例如,可充作加熱源之用。加熱 源81加熱注入至載入鎖定室21中之通氣氣體Μ減低通氣氣 體之相對濕度,藉此減低載入鎖定室21中之冷凝感應顆粒 之形成。 奮掄俐2 第8圖係本發明一第三實施例之半導體元件製造裝置 之示意視圆。第5圖之類似參考號碼指示相同之元件。參 考號碼51Α指示一排氣管其具有多數組,例如,兩組副管 件Ε及一主管件F。此處,每一副管件均連至每一載入鎖 定室21。主管件21 (其一端連至副管件Ε及另一端連至泵 41)在距多數組副管件相遇部分達一預定長度處之具有一 第一直徑Μ及在連至泵41處之其他部分具有一第二直徑。 較宜地,主管件F在距副管件Ε相遇部分達一預定長 度處具有一第一直徑,同時在其他部分具有一大於第一直 徑之第二直徑。具有第一直徑之部分僅為一示範性醮用, 且因此必要時可改良第一直徑部分之位置。此外,第一直 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) (·請先閱讀背面之注意事項*.¥本頁) 裝. 線 經濟部中央橾準局員工消費合作杜印製 11 Α7 Β7 五、發明説明(9) 徑大於副管件E之直徑。 參考號碼61A指示關閉閥其裝設於副管件E之一預定 部分中,俾決定由載入鎖定室21至泵41之氣體流動之關閉 。一空氣閥可充作關閉閥之用。關閉閥61A較宜装設在副 管件E之一預定部分内。因此,雖然關閉閥61A被突然開 啟,排氣速度可因主管件F中之第一直徑部分而減低。因 此,冷凝感應顆粒形成可籍箸防止因載入鎖定室21之壓力 之快速下降所造成之氣體絕熱膨脹之方式而減低。此外, 冷凝感應顆粒形成亦可藉著在通氣氣髏入口之一預定部分 中提供一加熱源(未顯示),例如,一加熱線Μ減低通氣 氣體之相對濕度的方式而減低。 如上所述,依據本發明之較佳貢施例,冷凝感應顆粒 形成可藉著防止氣體絕熱膨脹之方式而減低。 本發明未受限於Μ上實施例,且吾人清楚地瞭解許多 變化藉箸熟於本技S人士而在本發明之範圍與精神内成爲 可能。 I 訂 I ' 各 (.請先閱讀背面之注意事項¾本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度遴用中國國家標牟(CN'S ) A4規格(21 ο _χ 297公釐) 12 五、發明説明(10) A7 B7 元件檷號對照 經濟部中央標準局員工消費合作杜印製 10 ____ 處理室 101 . ...圓柱外殼 11 ____ 處理室 200 . ...板件 20 ____ 載入鋇定室 201 . ...轉盤 21 ---- 載入鎖定室 300 . ...風箱 30 ____ 隔離閥 301 . ...轉軸 31 ____ 隔離閥 400 . ...0形環 40 ____ 泵 500 . …(彈性) 41 ____ 泵 600 . ...(彈性) 50 ____ 排氣管 700 . ...彈簧 51 ____ 排氣管 800 . .· ·入口 51A… .排氣管 900 . ...氣體流動 60 .... 關閉閥 A ... .副管件 61 ____ 通氣速度控制閥 B ... .主管件 61A ... .關閉閥 C… .副管件 70 ____ 入口 D .主管件 71 ____ 入口 E . _ .副管件 81 ____ 加熱源 F… .主管件 100… .圖柱外般 ---------1---一---ΪΤ------i (請先閱讀背面之注意事項再^寫本頁) 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 2W公釐) -13 - 13
Claims (1)
- j -j A8 B8 C8 D8 六、申請專利範圍 第85106244號申諳專利範圍修正本 86.2.1. 製造裝置*包含: 供於其内製造一半導體元件; 室,其與該處理室之一預定部分相連通 卽將傳送至該處理室之半導體晶圓丄 含: 1 . 一種半導體元件 一處理室 一載入鎖定 ,俾於其内載入 玆裁人鎖定室包 一涌氣氣體人口,俥將涌氩氙g碧泮人泫載λ緒宙 苕;及 加執源,其奘铅於誌诵氣氣體人口夕一?g宙邬 分中; 經濟部中央棣準局貝工消費合作衽印製 一泵,供減低該載入鎖定室之壓力; 一排氣管,其連接該載入鎖定室與該泵,俾排出該 載入鎖定室之氣體;以及 一閥,其裝設於該排氣管之一預定部分; 其中該閥為一通氣速度控制閥俾控制由該載入鎖定 室流至該泵之氣體速度。 .如申請專利範圍第1項之半導體元件製造裝置,其中該 加熱源為一環繞該通氣氣體入口之加熱線° • 一種半導體元件製造裝置,包含: 一處理室,供於其内製造一半導體元件; 一載入鎖定室,其與該處理室相連通俾於其内載入 一即將傳送至該處理室之半導體晶圓;以及 一通氣氣體入口,供將通氣氣體注入該載.入鎖定室 内; -14 - n n^— f I 11111.^1 1^1 m - i I I mu n>; ^ J ^^^1 i —^n m I , 、va·ν (請先閲讀背面之注意事項再填寫本頁) 用中國國家標準(CNS ) Α4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 A8 B8 C8 D8六、申請專利範圍 其中該通氣氣體入口設有一加熱源而該加熱源裝設 於其預定部分中,俾加熱注入至該載入鎖定室内之通氣 氣體c 4.如申請專利範圍第3項之半導體元件製造装置,其中該 加熱源為一環繞該通氣氣體入口之加熱線: 5 . —種半導體元件製造装置,包含: 一處理室,供於其内製造一半導體元件; 多數組載入鎖定室,其與該處理室之預定部份相連 通俾於其内載入即將傳送至該處理室之半導體晶圚ill 毎一載A銷亩宕包含: 一诵氣氣髒人□,梅將滴氣氣體泮人該載人鎖定 宰,及 一加執源,奘沿於铉涌氣氣體人口之一裙定部份 一泵,供減低該載入鎖定室之壓力; 一排氣管,其連接該載入鎖定室與該泵,俾排出該 載入鎖定室之氣體;該排氣管包含多數組副管件而每一 副管件均連至每一載入鎖定室,以及一主管件其具有一 預定部份而該預定部份之直徑不同於其他部份之直徑, 該主管件之一端連至該多數組副管件且其另一端則連至 該泵;以及 一閥,其装設於該排氣管之一預定部份内。 In m^l ^^1· «^^^^1 In ^nf —m —^ϋ \ J . 0¾ * (請先閱讀背面之注意事項再填寫本頁) -15 - 本紙浪尺度適用中國國家標準(CNS ) A4規格(210X 297公釐)
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JP3218488B2 (ja) * | 1993-03-16 | 2001-10-15 | 東京エレクトロン株式会社 | 処理装置 |
US6047713A (en) * | 1994-02-03 | 2000-04-11 | Applied Materials, Inc. | Method for cleaning a throttle valve |
US5485542A (en) * | 1994-07-18 | 1996-01-16 | Mks Instruments, Inc. | Heated fluid control valve with electric heating element and thermocouple wiring disposed in rotatable shaft |
JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
-
1995
- 1995-11-21 KR KR1019950042623A patent/KR100189981B1/ko not_active IP Right Cessation
-
1996
- 1996-05-25 TW TW085106244A patent/TW308705B/zh not_active IP Right Cessation
- 1996-06-06 CN CNB961022655A patent/CN1165637C/zh not_active Expired - Lifetime
- 1996-06-06 CN CNB200310116459XA patent/CN1242456C/zh not_active Expired - Lifetime
- 1996-06-07 DE DE69616481T patent/DE69616481T2/de not_active Expired - Lifetime
- 1996-06-07 EP EP00302162A patent/EP1017085A3/en not_active Withdrawn
- 1996-06-07 EP EP96304288A patent/EP0776026B1/en not_active Expired - Lifetime
- 1996-06-18 JP JP17750396A patent/JP4008515B2/ja not_active Expired - Lifetime
- 1996-11-20 US US08/752,954 patent/US5833425A/en not_active Expired - Lifetime
-
1997
- 1997-12-01 US US08/980,789 patent/US6071350A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69616481T2 (de) | 2002-07-11 |
EP0776026A1 (en) | 1997-05-28 |
EP0776026B1 (en) | 2001-10-31 |
US6071350A (en) | 2000-06-06 |
EP1017085A3 (en) | 2002-09-25 |
US5833425A (en) | 1998-11-10 |
KR970030243A (ko) | 1997-06-26 |
JP4008515B2 (ja) | 2007-11-14 |
CN1165637C (zh) | 2004-09-08 |
CN1152626A (zh) | 1997-06-25 |
CN1501445A (zh) | 2004-06-02 |
KR100189981B1 (ko) | 1999-06-01 |
CN1242456C (zh) | 2006-02-15 |
JPH09148265A (ja) | 1997-06-06 |
DE69616481D1 (de) | 2001-12-06 |
EP1017085A2 (en) | 2000-07-05 |
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MK4A | Expiration of patent term of an invention patent |