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CN1165637C - 使用真空系统的半导体器件制造设备 - Google Patents

使用真空系统的半导体器件制造设备 Download PDF

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CN1165637C
CN1165637C CNB961022655A CN96102265A CN1165637C CN 1165637 C CN1165637 C CN 1165637C CN B961022655 A CNB961022655 A CN B961022655A CN 96102265 A CN96102265 A CN 96102265A CN 1165637 C CN1165637 C CN 1165637C
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全在善
金元永
梁允模
蔡胜基
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Samsung Electronics Co Ltd
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Abstract

提供一种使用真空系统的半导体器件制造设备。在通入气体进气口的预定部分里安装加热源。在排气管的预定部分里安装通气速度控制阀，用于通过控制其开口度控制气体从装料预真空室向泵流动的速度。排气管具有不同直径的主管以降低通气速度。由于避免在装料预真空室中气体的绝热膨胀，所以能够减少凝聚-引起的微粒形成。

Description

使用真空系统的半导体器件制造设备
本发明涉及半导体器件制造设备，尤其是涉及使用真空系统的半导体器件制造设备。
在用使用真空系统的半导体器件制造设备制作半导体器件的状况下，在加工室的压力降低(泵停下来)期间形成微粒，并且形成的微粒降落在那里加工的晶片上。这种半导体晶片的微粒沾污大大降低半导体器件的成品率和可靠性。随着晶片直径和较高集成度的增大这个问题更为严重。
在压力降低或放气期间，微粒形成被认为是由气体的绝热膨胀引起凝聚的机理所造成的(见“真空泵停机期间凝聚-引起的微粒形成”Yan Ye等Journal of The Electrochemical society，140卷5期1463-1468页1993年5月)。根据所提出的机理，在加工室的压力迅速下降的情况下，室中气体经受绝热膨胀使其温度急剧降低。气体同时被凝聚成水滴。在液滴形成期间，空气比例如SO2、O3、H2O2和其他气态杂质这样的气体扩散到液滴，从而被吸收。而且，室壁的热容量要比液滴的热容量大，所以加工室的内表面温度下降要比液滴的温度下降要慢。造成的温度差引起热量从加工室传输到液滴，导致液滴的吸热和蒸发，因此液体中的杂质浓度增大。在液相浓缩期间，当液体中H2O2的浓度足够高时，H2O2很快与SO2反应，生成硫酸，导致硫酸液滴的形成。随着液滴继续蒸发，形成呈球形的主要含有硫酸的剩余微粒。剩余微粒的主要元素组分是碳、硫和氧，并且剩余微粒在的热力学上是非常稳定的。所以，剩余微粒甚至在加热到温度高达180℃时没有完全蒸发。
当加工室越小、气体的相对湿度越高并且降压速度或放气速度越快时，出现越多的凝聚引起的微粒。
图1是常规的使用真空系统的半导体器件制造设备中的离子注入设备的示意图。在图1中，标号10表示半导体晶片在其里面进行离子注入的加工室；标号20表示与加工室10的预定部分连通的二个装料预真空室，用作在那里装转送到加工室的晶片；标号30表示安装在加工室10和各个装料预真空室20之间的隔离阀，用作决定加工室10与装料预真空室20之间的隔离；标号40表示为了把晶片处于真空状态下转送到加工室10，用作降低装料预真空室20压力的泵；标号50表示排气管，具有二条分别与装料预真空室20连接的支管A和一端与支管A连接而另一端与泵40连接的主管B；和标号60表示安装在支管A的预定部分里的关断阀，用作决定关断从装料预真空室20到泵40的气流。
在图1的设备中，依靠气压打开和关闭的空气阀通常用作关断阀60。由于来自装料预真空室20的流动气体聚集并通过主管B，所以主管B的直径比支管直径大。此外，标号70表示用作把通入气体注入装料预真空室20的进气口。
现根据图1阐述使用真空系统的常规的半导体器件制造设备的操作。
安装在关断阀60和泵40之间的排气管50保持约为10-3托的低真空。然后把晶片装入装料预真空室20，并打开关断阀60以使装料预真空室20的压力下降到10-3托。此后，打开隔离阀30把晶片转送到加工室10。这时，加工室10处于约10-6托的高真空。
把晶片转送到加工室10之前，使装料预真空室20调整到低真空，以致通过减少加工室10的高真空和装料预真空室20的大气压之间的差别，防止气体的突然混流而预先减少微粒。
图2是用作关断阀的空气阀60的放大剖面图。在图2中，标号100是一个圆柱形壳体，在其壁上和底部有小孔，标号200表示安装在壳体100里面预定部分上的一块板，以把壳体分隔成上部分和下部分，并且在其中心有一个使下部分与上部分连通的小孔；标号300表示围绕板200上的小孔固定在板上的波纹管，波纹管被下表面板密封，在其下端部分上有一个0形环以打开和关闭壳体100的底部小孔；标号500表示安装在壳体100的内部上表面并凸向壳体100下部分的弹性橡皮罩；标号600表示固定在橡皮罩500的凸表面上的弹簧支架，其一部分插入板200上的小孔；标号700表示一个弹簧，其一端固定于波纹管300的底部而另一端固定于弹簧支架600；标号800表示与由板200构成壳体100上部分的侧面连通的空气进气口；和标号900表示气体从装料预真空室向泵40流动(图1)。如果通过空气进气口800进入的空气压力大于或等于预定压力，则橡皮罩500的凸端部分向上推进，使波纹管400垂直地缩短并因此使壳体100的下部小孔打开。由于下部小孔很快打开，所以装料预真空室20的压力迅速下降。
图3表示在装料预真空室20中形成微粒的扫描电子显微镜(SEM)照片。微粒直径约为0.3-3.7微米并呈球形。
图4说明用俄歇电子频谱测定法(AES)分析图3中微粒的组分所获得的结果。在图中说明主要的组分是硫、氧和碳。
根据以上所述，在常规的使用真空系统的半导体器件制造设备中，在分析装料预真空室内产生的微粒的形状和组分中发现，正如由Yan ye等提出的那样，气体凝聚是微粒形成的原因。也就是说，由于用作排除装料预真空室气体的关断阀迅速打开，装料预真空室的压力很快下降。所以，装料预真空室中气体的绝热膨胀是造成微粒形成的原因。
根据与上述同样的机理，在装料预真空室通气期间通入一气体的绝热膨胀产生微料。
本发明的目的是提供一种通过防止装料预真空室(锁气室)中气体的绝热膨胀而能够减少因凝聚引起的微粒形成的半导体器件制造设备。
为了达到上述目的的一个方面，按照本发明的第一实施例提供一种半导体器件制造设备，包括：在里面制作半导体器件的加工室；与加工室的预定部分连通的装料预真空室，用来在里面装转送到加工室的半导体晶片；用来降低装料预真空室压力的泵；使装料预真空室与泵连接的排气管，用作排除装料预真空室的气体；和安装在排气管预定部分内的阀，用作阀制气体从装料预真空室流向泵的速度。
为了达到上述目的的另一个方面，按照本发明的第二实施例提供一种半导体器件制造设备，包括：在里面制作半导体器件的加工室；与加工室连通的装料预真空室，用来在里面装转送到加工室的半导体晶片；和用来把通入-气体注入装料预真空室的通入-气体进气口，通入-气体进气口里面装有加热源，加热源安装在其预定的部分上，用来加热注入装料预真空室的气体。
为了达到上述目的再一个方面，按照本发明的第三实施例提供一种半导体器件制造设备，包括：在里面制作半导体器件的加工室；与加工室连通的许多装料预真空室，用来在里面装许多转送到加工室的半导体晶片；用作降低许多装料预真空室压力的泵；使许多装料预真空室与泵连接的排气管，用作排除装料预真空室的气体，该排气管包含许多条支管，每一条支管连接每一个装料预真空室，而主管预定部分的直径与其余部分的直径不同，其一端与许多条支管连接而另一端与泵连接；和安装在排气管预定部分内的阀门。
通过详细地描述推荐的实施例及其有关的附图，本发明的目的和优点将更为清楚，其中，
图1是使用真空系统的常规半导体器件制造设备的示意图；
图2是用作图1中关断阀的剖面图；
图3是在图1的装料预真空室中生成微粒的SEM照片；
图4说明图3中微粒组分的AES分析结果；
图5是相应于本发明第一实施例的半导体器件制造设备的示意图；
图6是用作图5中所示的通气速度控制阀的示意图；
图7是相应于本发明第二实施例的半导体器件制造设备的示意图；
图8是相应于本发明第三实施例的半导体器件制造设备的示意图。
实施例1
图5是相应于本发明第一实施例的半导体器件制造设备(主要是离子注入设备)的示意图。在图中，标号11表示半导体晶片在里面进行离子注入的加工室；标号21表示与加工室11的预定部分连通的许多装料预真空室例如二个装料预真空室，用来在里面装转送到加工室的半导体晶片；标号31表示配置在加工室11和每一个装料预真空室21之间的隔离阀，用来决定加工室11与装料预真空室的隔离；标号41表示为了把晶片从装料预真空室21在真空状态下转送到加工室11，用来降低装料预真空室21压力的泵。标号51表示具有许多条(例如2条)支管C(每一条支管与每一个装料预真空室21连接)和一条主管D(主管D的一端与支管C连接而另一端与泵41连接)的排气管；标号61表示安装在排气管中的通气速度控制阀，通过控制其开口度来控制气体从装料预真空室向泵41流动的速度；和标号71表示用作把通入气体注入每个装料预真空室的通入气体进气口。最好，由于从装料预真空室21流出的气体聚集并通过主管D，所以主管D的直径大于支管C的直径。进一步，节气阀可以用作通气速度控制阀61。
根据本实施例，通气控制阀61平稳地增加通气速度从而避免由于装料预真空室21压力急剧下降而引起的气体绝热膨胀能够减少凝聚-引起的微粒形成。此外，安装加热源，例如，在通气进气口的预定部分上的加热丝以把在通气过程期间注入的气体加热，从而降低气体相对湿度也能够减少凝聚引起的微粒形成。
图6是用作通气速度控制阀61的节气阀的示意图。在图中，标号101表示在其侧面有小孔的圆柱形壳体，圆柱形壳体101通过小孔与图5中的排气管51连接；标号201表示把壳体101分隔成左部分和右部分的圆盘形状的转动板；和标号301表示由电机(未表示出)转动并垂直穿过壳体101以及通过转动板201的中心与转动板201组合的转动轴。因此，用以转动轴作轴心转动转动轴301的方法来转动转动板201，而从装料预真空室21流向泵41(图5)的气体的速度取决于转动的程度。
实施例2
图7是相应于本发明第二实施例的半导体器件制造设备(主要是离子注入设备)的示意图。和图5中的标号一样的标号表示同样的元件。标号61A表示安装在支管C的预定部分内的关断阀，用来决定关断气体从装料预真空室21向泵41的流动。例如空气阀能够用作关断阀。标号81表示安装在通入-气体进气口71的预定部分上的加热源。例如加热丝能够用作加热源。加热源81使注入到装料预真空室21的通入气体加热以降低通入气体的相对湿度，从而减少在装料预真空室21中凝聚引起的微粒形成。
实施例3
图8是相应于本发明第三实施例的半导体器件制造设备(主要是离子注入设备)的示意图。和图5中的标号一样的标号表示同样的元件。标号51A表示具有许多条(例如2条)支管E和一条主管F的排气管。在图中，每条支管与每个装料预真空室21连接。一端与支管E连接而另一端与泵41连接的主管F在距许多支管相交部分的预定长度内具有第一直径而在与泵41连接的其余部分内具有第二直径。
最好，主管F在距支管E相交处的预定长度内具有第一直径，而主管F在主管F的其余部分内具有比第一直径大的第二直径。如有必要，具有第一直径的部分正是一种典型的应用，因而第一直径部分的位置能够变化。进一步，第一直径比支管E的直径大。
标号61A表示安装在支管E的预定部分上的关断阀，用来决定从装料预真空室21向泵41的流动的气体的关断。空气阀能够用作关断阀。关断阀61最好安装在支架E的预定部分内。所以，虽然关断阀61突然打开，但是由于在主管F中的第一直径部分，使排气的速度能够减小。因此，由于避免由装料预真空室21中的压力急剧下降而引起的气体绝热膨胀。所以能够减少凝聚引起的微粒形成。此外，通过在通入气体的进气口的预定部分里装置加热源(未表示出)例如加热丝，以降低通入气体的相对湿度，也能减少凝聚引起的微粒形成。
如上所述，根据本发明的推荐实施例，由于避免气体的绝热膨胀，能够减少凝聚引起的微粒形成。
本发明不只限于上述的实施例，任何一位精通技术的人清楚地懂得在本发明的范围和精神内会有许多变化是可能的。

Claims (5)

1.一种半导体器件制造设备，包括：
用于制作半导体器件的加工室；
与上述的加工室的预定部分连通的装料预真空室，用于装传送到上述的加工室的半导体晶片；
用来降低上述的装料预真空室压力的泵；
把上述的装料预真空室与上述的泵连接的排气管，用来排除上述的装料预真空室的气体；和
安装在上述的排气管的预定部分内的阀，
其中，上述阀是用来控制从上述的装料预真空室向上述的泵流动的气体速度的通气速度控制阀，
上述装料预真空室包括：
把通入气体注入到上述的装料预真空室的通入气体进气口；和
安装在通入气体进气口的预定部分的加热源。
2.如权利要求1中所要求的半导体器件制造设备，其特征为上述的通气速度控制阀是节气阀。
3.如权利要求1中所要求的半导体器件制造设备，其特征为上述的加热源是围绕上述的通气进气口的加热丝。
4.如权利要求2中所述的半导体器件制造设备，其特征为上述的节气阀包括：
具有在其两侧面上形成与上述的排气管连接的小孔的圆柱形壳体；
把上述的壳体分隔成左部分和右部分的圆盘形状的转动板；
垂直穿过上述的壳体并通过上述的转动板的中心与上述的转动板组合的转动轴；
用作把力传递给上述的转动轴的动力源。
5.根据权利要求4所述的半导体器件制造装备，其特征在于所述动力源是马达。
CNB961022655A 1995-11-21 1996-06-06 使用真空系统的半导体器件制造设备 Expired - Lifetime CN1165637C (zh)

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