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TW200720803A - Display apparatus and manufacturing method thereof - Google Patents

Display apparatus and manufacturing method thereof

Info

Publication number
TW200720803A
TW200720803A TW095132351A TW95132351A TW200720803A TW 200720803 A TW200720803 A TW 200720803A TW 095132351 A TW095132351 A TW 095132351A TW 95132351 A TW95132351 A TW 95132351A TW 200720803 A TW200720803 A TW 200720803A
Authority
TW
Taiwan
Prior art keywords
conductive layer
insulating film
tft array
sealing pattern
array substrate
Prior art date
Application number
TW095132351A
Other languages
English (en)
Inventor
Kazunori Inoue
Harumi Murakami
Toshio Araki
Nobuaki Ishiga
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200720803A publication Critical patent/TW200720803A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1341—Filling or closing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095132351A 2005-09-27 2006-09-01 Display apparatus and manufacturing method thereof TW200720803A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005279398A JP2007093686A (ja) 2005-09-27 2005-09-27 液晶表示装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW200720803A true TW200720803A (en) 2007-06-01

Family

ID=37892764

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132351A TW200720803A (en) 2005-09-27 2006-09-01 Display apparatus and manufacturing method thereof

Country Status (4)

Country Link
US (2) US7816693B2 (zh)
JP (1) JP2007093686A (zh)
CN (1) CN100451793C (zh)
TW (1) TW200720803A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847227B2 (en) 2012-02-03 2014-09-30 E Ink Holdings Inc. Display panel circuit structure

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4887424B2 (ja) * 2007-03-30 2012-02-29 シャープ株式会社 液晶表示装置
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
KR101035627B1 (ko) * 2010-01-21 2011-05-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
JP5621283B2 (ja) 2010-03-12 2014-11-12 セイコーエプソン株式会社 電気光学装置及び電子機器
KR101791578B1 (ko) * 2011-02-17 2017-10-31 삼성디스플레이 주식회사 액정 표시 장치
KR101875774B1 (ko) * 2011-08-10 2018-07-09 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조 방법
JP2013084907A (ja) * 2011-09-28 2013-05-09 Kobe Steel Ltd 表示装置用配線構造
CN102664194B (zh) * 2012-04-10 2015-01-07 深超光电（深圳）有限公司 薄膜晶体管
JP6230253B2 (ja) * 2013-04-03 2017-11-15 三菱電機株式会社 Ｔｆｔアレイ基板およびその製造方法
US20150179666A1 (en) * 2013-12-25 2015-06-25 Shenzhen China Star Optoelectronics Technology Co., Ltd. Wiring structure of array substrate
TWI532154B (zh) 2014-02-25 2016-05-01 群創光電股份有限公司 顯示面板及顯示裝置
CN108663862B (zh) * 2014-02-25 2020-02-07 群创光电股份有限公司 显示面板
US20170184893A1 (en) * 2014-07-11 2017-06-29 Sharp Kabushiki Kaisha Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus
CN104966719A (zh) * 2015-06-29 2015-10-07 武汉华星光电技术有限公司 显示面板、薄膜晶体管阵列基板及其制作方法
KR102439308B1 (ko) * 2015-10-06 2022-09-02 삼성디스플레이 주식회사 표시장치
KR102173434B1 (ko) * 2017-12-19 2020-11-03 엘지디스플레이 주식회사 표시 장치
CN109061955A (zh) * 2018-09-13 2018-12-21 重庆惠科金渝光电科技有限公司 显示面板及其制造方法
KR102555412B1 (ko) 2018-12-14 2023-07-13 엘지디스플레이 주식회사 발광 소자를 포함하는 디스플레이 장치

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63131569A (ja) 1986-11-20 1988-06-03 Fuji Xerox Co Ltd 半導体装置
JPH08254712A (ja) 1995-03-17 1996-10-01 Hitachi Ltd 液晶表示素子
JPH09325358A (ja) 1996-06-04 1997-12-16 Sharp Corp 液晶表示装置およびその製造方法
JPH1062810A (ja) 1996-08-19 1998-03-06 Sanyo Electric Co Ltd 半導体装置
US5953094A (en) 1997-04-04 1999-09-14 Sanyo Electric Co., Ltd. Liquid crystal display device
JPH10282515A (ja) 1997-04-08 1998-10-23 Sanyo Electric Co Ltd 液晶表示装置
KR100320007B1 (ko) * 1998-03-13 2002-01-10 니시무로 타이죠 표시장치용 어레이기판의 제조방법
JP2000029066A (ja) 1998-07-08 2000-01-28 Toshiba Corp 表示装置用アレイ基板、及びその製造方法
JP2000199915A (ja) * 1999-01-06 2000-07-18 Matsushita Electric Ind Co Ltd 液晶表示パネル
TW498553B (en) * 1999-03-11 2002-08-11 Seiko Epson Corp Active matrix substrate, electro-optical apparatus and method for producing active matrix substrate
JP2001005033A (ja) * 1999-06-18 2001-01-12 Nec Corp 液晶表示装置及びその製造方法
JP3539330B2 (ja) * 2000-02-14 2004-07-07 日本電気株式会社 液晶表示パネル及びその製造方法
JP2001249345A (ja) 2000-03-02 2001-09-14 Victor Co Of Japan Ltd 液晶表示装置及びその製造方法
TW514762B (en) * 2000-03-06 2002-12-21 Hitachi Ltd Liquid crystal display element having controlled storage capacitance
US6838696B2 (en) * 2000-03-15 2005-01-04 Advanced Display Inc. Liquid crystal display
JP3494172B2 (ja) * 2000-11-17 2004-02-03 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
KR100685946B1 (ko) * 2001-03-02 2007-02-23 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 및 그 제조방법
WO2003026898A1 (fr) * 2001-09-26 2003-04-03 Citizen Watch Co., Ltd. Dispositif a diaphragme a cristaux liquides
JP3957277B2 (ja) 2002-04-15 2007-08-15 株式会社アドバンスト・ディスプレイ 液晶表示装置及びその製造方法
JP2003307748A (ja) 2002-04-15 2003-10-31 Advanced Display Inc 液晶表示装置及びその製造方法
JP4199501B2 (ja) * 2002-09-13 2008-12-17 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置の製造方法
JP2004226654A (ja) * 2003-01-22 2004-08-12 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
CN1272664C (zh) 2003-12-03 2006-08-30 吉林北方彩晶数码电子有限公司 薄膜晶体管液晶显示器制造方法
JP2006126255A (ja) 2004-10-26 2006-05-18 Mitsubishi Electric Corp 電気光学装置、液晶表示装置及びそれらの製造方法
JP2006236839A (ja) 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
JP2006276287A (ja) * 2005-03-28 2006-10-12 Nec Corp 表示装置
JP5007246B2 (ja) 2008-01-31 2012-08-22 三菱電機株式会社 有機電界発光型表示装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847227B2 (en) 2012-02-03 2014-09-30 E Ink Holdings Inc. Display panel circuit structure
TWI463628B (zh) * 2012-02-03 2014-12-01 E Ink Holdings Inc 顯示器面板電路結構

Also Published As

Publication number Publication date
US7816693B2 (en) 2010-10-19
CN100451793C (zh) 2009-01-14
US20070069211A1 (en) 2007-03-29
US20110012121A1 (en) 2011-01-20
US8039852B2 (en) 2011-10-18
CN1940688A (zh) 2007-04-04
JP2007093686A (ja) 2007-04-12

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