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SE9500152L - Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt - Google Patents

Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Info

Publication number
SE9500152L
SE9500152L SE9500152A SE9500152A SE9500152L SE 9500152 L SE9500152 L SE 9500152L SE 9500152 A SE9500152 A SE 9500152A SE 9500152 A SE9500152 A SE 9500152A SE 9500152 L SE9500152 L SE 9500152L
Authority
SE
Sweden
Prior art keywords
ohmic contact
providing
semiconductor component
component provided
deposited
Prior art date
Application number
SE9500152A
Other languages
English (en)
Other versions
SE9500152D0 (sv
SE504916C2 (sv
Inventor
Bertil Kronlund
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9500152A priority Critical patent/SE504916C2/sv
Publication of SE9500152D0 publication Critical patent/SE9500152D0/sv
Priority to US08/875,038 priority patent/US5877077A/en
Priority to AU44995/96A priority patent/AU4499596A/en
Priority to CN96191499A priority patent/CN1088256C/zh
Priority to ES96901172T priority patent/ES2160799T3/es
Priority to KR1019970704752A priority patent/KR100406247B1/ko
Priority to PCT/SE1996/000035 priority patent/WO1996022611A1/en
Priority to DE69613674T priority patent/DE69613674T2/de
Priority to EP96901172A priority patent/EP0804802B1/en
Priority to CA002210222A priority patent/CA2210222A1/en
Priority to JP52220196A priority patent/JP3930561B2/ja
Publication of SE9500152L publication Critical patent/SE9500152L/sv
Publication of SE504916C2 publication Critical patent/SE504916C2/sv
Priority to FI973555A priority patent/FI973555A0/sv
Priority to HK98109120A priority patent/HK1008264A1/xx
Priority to US09/151,277 priority patent/US6043513A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SE9500152A 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt SE504916C2 (sv)

Priority Applications (14)

Application Number Priority Date Filing Date Title
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt
JP52220196A JP3930561B2 (ja) 1995-01-18 1996-01-17 オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法
PCT/SE1996/000035 WO1996022611A1 (en) 1995-01-18 1996-01-17 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
EP96901172A EP0804802B1 (en) 1995-01-18 1996-01-17 A method of producing an ohmic contact for a semiconductor device
CN96191499A CN1088256C (zh) 1995-01-18 1996-01-17 产生欧姆接触及制造设有该种欧姆接触的半导体器件的方法
ES96901172T ES2160799T3 (es) 1995-01-18 1996-01-17 Procedimiento de fabricacion de un contacto ohmico para un dispositivo semiconductor.
KR1019970704752A KR100406247B1 (ko) 1995-01-18 1996-01-17 옴접촉체를제조하는방법및이러한옴접촉체를구비한반도체소자
US08/875,038 US5877077A (en) 1995-01-18 1996-01-17 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
DE69613674T DE69613674T2 (de) 1995-01-18 1996-01-17 Verfahren zur herstellung eines ohmschen kontakts für eine halbleitervorrichtung
AU44995/96A AU4499596A (en) 1995-01-18 1996-01-17 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
CA002210222A CA2210222A1 (en) 1995-01-18 1996-01-17 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
FI973555A FI973555A0 (sv) 1995-01-18 1997-08-29 Förfarande för att åstadkomma en ohmisk kontakt samt en med en dylik ohmisk kontakt försedd halvledarkomponent
HK98109120A HK1008264A1 (en) 1995-01-18 1998-07-14 A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact
US09/151,277 US6043513A (en) 1995-01-18 1998-09-11 Method of producing an ohmic contact and a semiconductor device provided with such ohmic contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Publications (3)

Publication Number Publication Date
SE9500152D0 SE9500152D0 (sv) 1995-01-18
SE9500152L true SE9500152L (sv) 1996-07-19
SE504916C2 SE504916C2 (sv) 1997-05-26

Family

ID=20396858

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500152A SE504916C2 (sv) 1995-01-18 1995-01-18 Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt

Country Status (13)

Country Link
US (2) US5877077A (sv)
EP (1) EP0804802B1 (sv)
JP (1) JP3930561B2 (sv)
KR (1) KR100406247B1 (sv)
CN (1) CN1088256C (sv)
AU (1) AU4499596A (sv)
CA (1) CA2210222A1 (sv)
DE (1) DE69613674T2 (sv)
ES (1) ES2160799T3 (sv)
FI (1) FI973555A0 (sv)
HK (1) HK1008264A1 (sv)
SE (1) SE504916C2 (sv)
WO (1) WO1996022611A1 (sv)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6459100B1 (en) 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
US6599644B1 (en) 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
JP4545975B2 (ja) * 2001-03-27 2010-09-15 日本特殊陶業株式会社 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法
US7297626B1 (en) 2001-08-27 2007-11-20 United States Of America As Represented By The Secretary Of The Army Process for nickel silicide Ohmic contacts to n-SiC
JP4036075B2 (ja) * 2002-10-29 2008-01-23 豊田合成株式会社 ｐ型ＳｉＣ用電極の製造方法
US6747291B1 (en) 2003-01-10 2004-06-08 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on p-type silicon carbide using carbon films
US6815323B1 (en) 2003-01-10 2004-11-09 The United States Of America As Represented By The Secretary Of The Air Force Ohmic contacts on n-type silicon carbide using carbon films
US20060006393A1 (en) * 2004-07-06 2006-01-12 Ward Allan Iii Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices
CA2721668A1 (en) * 2008-04-15 2009-10-22 Sumitomo Electric Industries, Ltd. Semiconductor device and method of manufacturing the same
JP5449786B2 (ja) * 2009-01-15 2014-03-19 昭和電工株式会社 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法
JP4858791B2 (ja) * 2009-05-22 2012-01-18 住友電気工業株式会社 半導体装置およびその製造方法
JP5581642B2 (ja) * 2009-10-05 2014-09-03 住友電気工業株式会社 半導体装置の製造方法
JP5682556B2 (ja) * 2009-10-05 2015-03-11 住友電気工業株式会社 半導体装置
CA2769697A1 (en) * 2010-04-14 2011-10-20 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method for manufacturing same
FR2974944B1 (fr) 2011-05-02 2013-06-14 Commissariat Energie Atomique Procédé de formation d'une fracture dans un matériau
US9099578B2 (en) * 2012-06-04 2015-08-04 Nusola, Inc. Structure for creating ohmic contact in semiconductor devices and methods for manufacture
JP2014038899A (ja) 2012-08-13 2014-02-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
JP5949305B2 (ja) * 2012-08-13 2016-07-06 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN102931054B (zh) * 2012-08-21 2014-12-17 中国科学院微电子研究所 一种实现P型SiC材料低温欧姆合金退火的方法
CN102931224A (zh) * 2012-08-21 2013-02-13 中国科学院微电子研究所 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法
US9443772B2 (en) 2014-03-19 2016-09-13 Globalfoundries Inc. Diffusion-controlled semiconductor contact creation
US9397181B2 (en) 2014-03-19 2016-07-19 International Business Machines Corporation Diffusion-controlled oxygen depletion of semiconductor contact interface
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3492719A (en) * 1967-03-10 1970-02-03 Westinghouse Electric Corp Evaporated metal contacts for the fabrication of silicon carbide devices
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US5319220A (en) * 1988-01-20 1994-06-07 Sharp Kabushiki Kaisha Silicon carbide semiconductor device
CA2008176A1 (en) * 1989-01-25 1990-07-25 John W. Palmour Silicon carbide schottky diode and method of making same
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
US5323022A (en) * 1992-09-10 1994-06-21 North Carolina State University Platinum ohmic contact to p-type silicon carbide
US5561829A (en) * 1993-07-22 1996-10-01 Aluminum Company Of America Method of producing structural metal matrix composite products from a blend of powders
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Also Published As

Publication number Publication date
JPH10512716A (ja) 1998-12-02
JP3930561B2 (ja) 2007-06-13
DE69613674T2 (de) 2002-04-25
US5877077A (en) 1999-03-02
EP0804802A1 (en) 1997-11-05
CN1088256C (zh) 2002-07-24
FI973555A (sv) 1997-08-29
WO1996022611A1 (en) 1996-07-25
KR100406247B1 (ko) 2004-03-18
EP0804802B1 (en) 2001-07-04
ES2160799T3 (es) 2001-11-16
HK1008264A1 (en) 1999-05-07
CN1172551A (zh) 1998-02-04
SE9500152D0 (sv) 1995-01-18
AU4499596A (en) 1996-08-07
FI973555A0 (sv) 1997-08-29
SE504916C2 (sv) 1997-05-26
DE69613674D1 (de) 2001-08-09
CA2210222A1 (en) 1996-07-25
US6043513A (en) 2000-03-28

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