FI973555A0 - Förfarande för att åstadkomma en ohmisk kontakt samt en med en dylik ohmisk kontakt försedd halvledarkomponent - Google Patents
Förfarande för att åstadkomma en ohmisk kontakt samt en med en dylik ohmisk kontakt försedd halvledarkomponentInfo
- Publication number
- FI973555A0 FI973555A0 FI973555A FI973555A FI973555A0 FI 973555 A0 FI973555 A0 FI 973555A0 FI 973555 A FI973555 A FI 973555A FI 973555 A FI973555 A FI 973555A FI 973555 A0 FI973555 A0 FI 973555A0
- Authority
- FI
- Finland
- Prior art keywords
- ohmic contact
- producing
- semiconductor device
- device provided
- ohmic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9500152A SE504916C2 (sv) | 1995-01-18 | 1995-01-18 | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
| PCT/SE1996/000035 WO1996022611A1 (en) | 1995-01-18 | 1996-01-17 | A method of producing an ohmic contact and a semiconductor device provided with such ohmic contact |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FI973555A FI973555A (sv) | 1997-08-29 |
| FI973555A0 true FI973555A0 (sv) | 1997-08-29 |
Family
ID=20396858
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FI973555A FI973555A0 (sv) | 1995-01-18 | 1997-08-29 | Förfarande för att åstadkomma en ohmisk kontakt samt en med en dylik ohmisk kontakt försedd halvledarkomponent |
Country Status (13)
| Country | Link |
|---|---|
| US (2) | US5877077A (sv) |
| EP (1) | EP0804802B1 (sv) |
| JP (1) | JP3930561B2 (sv) |
| KR (1) | KR100406247B1 (sv) |
| CN (1) | CN1088256C (sv) |
| AU (1) | AU4499596A (sv) |
| CA (1) | CA2210222A1 (sv) |
| DE (1) | DE69613674T2 (sv) |
| ES (1) | ES2160799T3 (sv) |
| FI (1) | FI973555A0 (sv) |
| HK (1) | HK1008264A1 (sv) |
| SE (1) | SE504916C2 (sv) |
| WO (1) | WO1996022611A1 (sv) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6459100B1 (en) | 1998-09-16 | 2002-10-01 | Cree, Inc. | Vertical geometry ingan LED |
| US6599644B1 (en) | 2000-10-06 | 2003-07-29 | Foundation For Research & Technology-Hellas | Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide |
| JP4545975B2 (ja) * | 2001-03-27 | 2010-09-15 | 日本特殊陶業株式会社 | 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法 |
| US7297626B1 (en) | 2001-08-27 | 2007-11-20 | United States Of America As Represented By The Secretary Of The Army | Process for nickel silicide Ohmic contacts to n-SiC |
| JP4036075B2 (ja) * | 2002-10-29 | 2008-01-23 | 豊田合成株式会社 | ｐ型ＳｉＣ用電極の製造方法 |
| US6747291B1 (en) | 2003-01-10 | 2004-06-08 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on p-type silicon carbide using carbon films |
| US6815323B1 (en) | 2003-01-10 | 2004-11-09 | The United States Of America As Represented By The Secretary Of The Air Force | Ohmic contacts on n-type silicon carbide using carbon films |
| US20060006393A1 (en) * | 2004-07-06 | 2006-01-12 | Ward Allan Iii | Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices |
| CA2721668A1 (en) * | 2008-04-15 | 2009-10-22 | Sumitomo Electric Industries, Ltd. | Semiconductor device and method of manufacturing the same |
| JP5449786B2 (ja) * | 2009-01-15 | 2014-03-19 | 昭和電工株式会社 | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 |
| JP4858791B2 (ja) * | 2009-05-22 | 2012-01-18 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
| JP5581642B2 (ja) * | 2009-10-05 | 2014-09-03 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP5682556B2 (ja) * | 2009-10-05 | 2015-03-11 | 住友電気工業株式会社 | 半導体装置 |
| CA2769697A1 (en) * | 2010-04-14 | 2011-10-20 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method for manufacturing same |
| FR2974944B1 (fr) | 2011-05-02 | 2013-06-14 | Commissariat Energie Atomique | Procédé de formation d'une fracture dans un matériau |
| US9099578B2 (en) * | 2012-06-04 | 2015-08-04 | Nusola, Inc. | Structure for creating ohmic contact in semiconductor devices and methods for manufacture |
| JP2014038899A (ja) | 2012-08-13 | 2014-02-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
| JP5949305B2 (ja) * | 2012-08-13 | 2016-07-06 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| CN102931054B (zh) * | 2012-08-21 | 2014-12-17 | 中国科学院微电子研究所 | 一种实现P型SiC材料低温欧姆合金退火的方法 |
| CN102931224A (zh) * | 2012-08-21 | 2013-02-13 | 中国科学院微电子研究所 | 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法 |
| US9443772B2 (en) | 2014-03-19 | 2016-09-13 | Globalfoundries Inc. | Diffusion-controlled semiconductor contact creation |
| US9397181B2 (en) | 2014-03-19 | 2016-07-19 | International Business Machines Corporation | Diffusion-controlled oxygen depletion of semiconductor contact interface |
| US10269714B2 (en) | 2016-09-06 | 2019-04-23 | International Business Machines Corporation | Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3492719A (en) * | 1967-03-10 | 1970-02-03 | Westinghouse Electric Corp | Evaporated metal contacts for the fabrication of silicon carbide devices |
| JPS6271271A (ja) * | 1985-09-24 | 1987-04-01 | Sharp Corp | 炭化珪素半導体の電極構造 |
| US5319220A (en) * | 1988-01-20 | 1994-06-07 | Sharp Kabushiki Kaisha | Silicon carbide semiconductor device |
| CA2008176A1 (en) * | 1989-01-25 | 1990-07-25 | John W. Palmour | Silicon carbide schottky diode and method of making same |
| JP2509713B2 (ja) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | 炭化珪素半導体装置およびその製造方法 |
| US5323022A (en) * | 1992-09-10 | 1994-06-21 | North Carolina State University | Platinum ohmic contact to p-type silicon carbide |
| US5561829A (en) * | 1993-07-22 | 1996-10-01 | Aluminum Company Of America | Method of producing structural metal matrix composite products from a blend of powders |
| US5539217A (en) * | 1993-08-09 | 1996-07-23 | Cree Research, Inc. | Silicon carbide thyristor |
| JP3085078B2 (ja) * | 1994-03-04 | 2000-09-04 | 富士電機株式会社 | 炭化けい素電子デバイスの製造方法 |
| US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
-
1995
- 1995-01-18 SE SE9500152A patent/SE504916C2/sv not_active IP Right Cessation
-
1996
- 1996-01-17 CN CN96191499A patent/CN1088256C/zh not_active Expired - Lifetime
- 1996-01-17 AU AU44995/96A patent/AU4499596A/en not_active Abandoned
- 1996-01-17 US US08/875,038 patent/US5877077A/en not_active Expired - Lifetime
- 1996-01-17 EP EP96901172A patent/EP0804802B1/en not_active Expired - Lifetime
- 1996-01-17 KR KR1019970704752A patent/KR100406247B1/ko not_active IP Right Cessation
- 1996-01-17 JP JP52220196A patent/JP3930561B2/ja not_active Expired - Lifetime
- 1996-01-17 CA CA002210222A patent/CA2210222A1/en not_active Abandoned
- 1996-01-17 DE DE69613674T patent/DE69613674T2/de not_active Expired - Lifetime
- 1996-01-17 WO PCT/SE1996/000035 patent/WO1996022611A1/en active IP Right Grant
- 1996-01-17 ES ES96901172T patent/ES2160799T3/es not_active Expired - Lifetime
-
1997
- 1997-08-29 FI FI973555A patent/FI973555A0/sv active IP Right Revival
-
1998
- 1998-07-14 HK HK98109120A patent/HK1008264A1/xx not_active IP Right Cessation
- 1998-09-11 US US09/151,277 patent/US6043513A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10512716A (ja) | 1998-12-02 |
| JP3930561B2 (ja) | 2007-06-13 |
| DE69613674T2 (de) | 2002-04-25 |
| US5877077A (en) | 1999-03-02 |
| EP0804802A1 (en) | 1997-11-05 |
| CN1088256C (zh) | 2002-07-24 |
| FI973555A (sv) | 1997-08-29 |
| WO1996022611A1 (en) | 1996-07-25 |
| SE9500152L (sv) | 1996-07-19 |
| KR100406247B1 (ko) | 2004-03-18 |
| EP0804802B1 (en) | 2001-07-04 |
| ES2160799T3 (es) | 2001-11-16 |
| HK1008264A1 (en) | 1999-05-07 |
| CN1172551A (zh) | 1998-02-04 |
| SE9500152D0 (sv) | 1995-01-18 |
| AU4499596A (en) | 1996-08-07 |
| SE504916C2 (sv) | 1997-05-26 |
| DE69613674D1 (de) | 2001-08-09 |
| CA2210222A1 (en) | 1996-07-25 |
| US6043513A (en) | 2000-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NF | Re-establishment of lapsed right |