[go: up one dir, main page]

KR970700942A - 반도체 장치(semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a gluelayer and on which a pattern of conductor tracks is fastened) - Google Patents

반도체 장치(semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a gluelayer and on which a pattern of conductor tracks is fastened)

Info

Publication number
KR970700942A
KR970700942A KR1019960703919A KR19960703919A KR970700942A KR 970700942 A KR970700942 A KR 970700942A KR 1019960703919 A KR1019960703919 A KR 1019960703919A KR 19960703919 A KR19960703919 A KR 19960703919A KR 970700942 A KR970700942 A KR 970700942A
Authority
KR
South Korea
Prior art keywords
substrate
silicon
semiconductor device
carrier body
contact
Prior art date
Application number
KR1019960703919A
Other languages
English (en)
Other versions
KR100389754B1 (ko
Inventor
데커 로널드
고데프리더스 라파엘 마스 헨리커스
Original Assignee
프레데릭 얀 스미트
필립스 일렉트로닉스 엔. 브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프레데릭 얀 스미트, 필립스 일렉트로닉스 엔. 브이. filed Critical 프레데릭 얀 스미트
Publication of KR970700942A publication Critical patent/KR970700942A/ko
Application granted granted Critical
Publication of KR100389754B1 publication Critical patent/KR100389754B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/24221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/24225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01072—Hafnium [Hf]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)

Abstract

본 발명은 기재(3)가 접착층(2)에 의해 고정되어 있고, 캐리어 본체(carrier body)(1)와 대향하고 있는 그의 제1측(4)에 반도체 소자를 구비하고 있으며, 또한 상기 캐리어 본체(1)로부터 멀리 떨어져 대향하고 있는 기재의 제2측(8)으로부터 외부 접촉시키기 위한 접촉 전극 또는 결합 패드(7)를 가진 도체 트랙(conductor tracks)(6)의 패턴을 구비하고 있는 캐리어 본체(1)를 가진 반도체 장치(semiconductor device)를 개시한다.
외부 접촉을 위한 접촉 전극(7)을 가진 도체 트랙(6)의 패턴은 접촉 전극(7)의 영역에 제2측(8)으로부터 외부 접촉시키기 위한 윈도우(9)를 구비한 기재(3)의 제1측(4)에 제공된다.
기재(3)를 캐리어 본체(1)에 고정시키는 접착공정 이전의 공정 단계는 반도체 소자의 제조에 적합한 청정실내에서 수행하지만, 나머지 공정 단계는 바람직하게는 최종 실장을 위해 청정실 외측에 설치된 보다 하급의 청정실내에서 수행한다. 본 발명에서는 간단한 접촉 마스크를 이용하여 비교적 큰 윈도우(9)를 형성시킬 수 있기 때문에, 상기 2개의 청정실에 이용되는 고가의 사진석판 장비를 사용하지 않고서도 상기 공정을 수행할 수 있다.

Description

반도체 장치(SEMICONDUCTOR DEVICE WITH A CARRIER BODY ON WHICH A SUBSTRATE WITH A SEMICONDUCTOR ELEMENT IS FASTENED BY MEANS OF A GLUELAYER AND ON WHICH A PATTERN OF CONDUCTOR TRACKS IS FASTENED)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도3은 본 발명에 따른 반도체 장치의 제3실시태양의 개략 단면도.

Claims (7)

  1. 결합 패드(bond pad)의 영역에 제2측으로부터 외부 접촉시키기 위한 윈도우를 구비한 기재의 제1측상에 외부 접촉을 위한 접촉 전극(contact electrode)을 가진 도체 트랙(conductor track)의 패턴을 구비하고 있음을 특징으로 하는, 접착층에 의해 기재가 고정되고, 캐리어 본체와 대향하고 있는 그의 제1측에 반도체 소자를 구비하고 있으며, 또한 상기 캐리어 본체로부터 멀리 떨어져 대향하고 있는 기재의 제2측으로부터 외부 접촉시키기 위한 접촉 전극(또는 결합 패드)를 포함하는 도체 트랙의 패턴을 구비하고 있는 캐리어 본체를 가진 반도체 장치.
  2. 제1항에 있어서, 상기 기재가 절연 물질의 층으로 이루어지고, 상기 반도체 소자가 상기 기재의 제1측상에 존재하는 실리콘층내에 형성되어 있음을 특징으로 하는 반도체 장치.
  3. 제2항에 있어서, 상기 실리콘층이 반도체 소자가 존재하는 아일랜드(island) 근처에서 이산화실리콘으로 전환되고, 상기 접촉 전극이 상기 아일랜드 근처에서 이산화실리콘상에 형성되어 있음을 특징으로 하는 반도체 장치.
  4. 제2항에 있어서, 상기 실리콘층이 아일랜드의 형태로 상기 기재상에 국부적으로 존재하고, 상기 접촉 전극이 상기 실리콘 아일랜드 근처에서 기재상에 직접 형성되어 있음을 특징으로 하는 반도체 장치.
  5. 제2항, 제3항 또는 제4항에 있어서, 상기 반도체 기재가 그의 제1측에 매립된 절연층을 구비하고 있는 실리콘 슬라이스로부터 형성되고, 상기 슬라이스의 상기 매립된 절연층 아래의 제2측으로부터 실리콘을 제거함으로써 형성된 것임을 특징으로 하는 반도체 장치.
  6. 제5항에 있어서, 상기 매립된 절연층이 실리콘과 절연 물질을 형성하는 이온을 주입시킴으로써 실리콘 슬라이스내에 형성된 것임을 특징으로 하는 반도체 장치.
  7. 제6항에 있어서, 상기 매립된 절연층이 질소 또는 산소 이온을 주입시킴으로써 실리콘 슬라이스내에 형성된 것임을 특징으로 하는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960703919A 1994-11-22 1995-10-16 반도체장치 KR100389754B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP94203386.1 1994-11-22
EP94203386 1994-11-22

Publications (2)

Publication Number Publication Date
KR970700942A true KR970700942A (ko) 1997-02-12
KR100389754B1 KR100389754B1 (ko) 2003-10-17

Family

ID=8217398

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960703919A KR100389754B1 (ko) 1994-11-22 1995-10-16 반도체장치

Country Status (6)

Country Link
US (1) US5739591A (ko)
EP (1) EP0740853B1 (ko)
JP (1) JP4319251B2 (ko)
KR (1) KR100389754B1 (ko)
DE (1) DE69507284T2 (ko)
WO (1) WO1996016443A1 (ko)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034321A2 (en) * 1996-03-12 1997-09-18 Philips Electronics N.V. Semiconductor body with a substrate glued to a support body
JPH11261010A (ja) 1998-03-13 1999-09-24 Mitsubishi Electric Corp 半導体装置及びその製造方法
EP1090424A1 (en) 1999-04-23 2001-04-11 Koninklijke Philips Electronics N.V. A semiconductor device with an operating frequency larger than 50mhz comprising a body composed of a soft ferrite material
WO2001001485A2 (en) * 1999-06-29 2001-01-04 Koninklijke Philips Electronics N.V. A semiconductor device
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
IL160189A0 (en) 2001-08-24 2004-07-25 Zeiss Stiftung Method for producing contacts and printed circuit packages
WO2003025980A2 (en) * 2001-09-18 2003-03-27 Koninklijke Philips Electronics N.V. Method of examining a wafer of semiconductor material by means of x-rays
DE10356885B4 (de) 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
ATE550019T1 (de) 2005-05-17 2012-04-15 Merck Sharp & Dohme Cis-4-ä(4-chlorophenyl)sulfonylü-4-(2,5- difluorophenyl)cyclohexanepropansäure zur behandlug von krebs
PE20070335A1 (es) 2005-08-30 2007-04-21 Novartis Ag Benzimidazoles sustituidos y metodos para su preparacion
GB0603041D0 (en) 2006-02-15 2006-03-29 Angeletti P Ist Richerche Bio Therapeutic compounds
JP5328640B2 (ja) 2006-04-19 2013-10-30 ノバルティス アーゲー ６−ｏ−置換ベンゾオキサゾールおよびベンゾチアゾール化合物ならびにｃｓｆ−１ｒシグナル伝達を阻害する方法
EP2698157B1 (en) 2006-09-22 2015-05-20 Merck Sharp & Dohme Corp. Method of treatment using fatty acid synthesis inhibitors
RS58936B1 (sr) 2007-01-10 2019-08-30 Msd Italia Srl Indazoli supstituisani amidom kao inhibitori poli(adp-riboza)polimeraze (parp)
BRPI0808523A2 (pt) 2007-03-01 2014-08-19 Novartis Vaccines & Diagnostic Inibidores de pim cinase e métodos de seu uso
CA2685967A1 (en) 2007-05-21 2008-11-21 Novartis Ag Csf-1r inhibitors, compositions, and methods of use
EP3103791B1 (en) 2007-06-27 2018-01-31 Merck Sharp & Dohme Corp. 4-carboxybenzylamino derivatives as histone deacetylase inhibitors
WO2010114780A1 (en) 2009-04-01 2010-10-07 Merck Sharp & Dohme Corp. Inhibitors of akt activity
EP2440058A4 (en) 2009-06-12 2012-11-21 Dana Farber Cancer Inst Inc FOUNDED HETEROCYCLIC COMPOUNDS AND USES THEREOF
JP5580415B2 (ja) * 2009-07-22 2014-08-27 コーニンクレッカ フィリップス エヌ ヴェ 短レスポンス時間及び高感度を持つ熱流センサ集積回路
EP2488028B1 (en) 2009-10-14 2020-08-19 Merck Sharp & Dohme Corp. Substituted piperidines that increase p53 activity and the uses thereof
KR20130006664A (ko) 2010-03-16 2013-01-17 다나-파버 캔서 인스티튜트 인크. 인다졸 화합물 및 그의 용도
US8999957B2 (en) 2010-06-24 2015-04-07 Merck Sharp & Dohme Corp. Heterocyclic compounds as ERK inhibitors
WO2012018754A2 (en) 2010-08-02 2012-02-09 Merck Sharp & Dohme Corp. RNA INTERFERENCE MEDIATED INHIBITION OF CATENIN (CADHERIN-ASSOCIATED PROTEIN), BETA 1 (CTNNB1) GENE EXPRESSION USING SHORT INTERFERING NUCLEIC ACID (siNA)
AU2011292261B2 (en) 2010-08-17 2015-05-14 Sirna Therapeutics, Inc. RNA interference mediated inhibition of Hepatitis B virus (HBV) gene expression using short interfering nucleic acid (siNA)
EP2608669B1 (en) 2010-08-23 2016-06-22 Merck Sharp & Dohme Corp. NOVEL PYRAZOLO[1,5-a]PYRIMIDINE DERIVATIVES AS mTOR INHIBITORS
WO2012030685A2 (en) 2010-09-01 2012-03-08 Schering Corporation Indazole derivatives useful as erk inhibitors
WO2012036997A1 (en) 2010-09-16 2012-03-22 Schering Corporation Fused pyrazole derivatives as novel erk inhibitors
EP3766975A1 (en) 2010-10-29 2021-01-20 Sirna Therapeutics, Inc. Rna interference mediated inhibition of gene expression using short interfering nucleic acid (sina)
US9351965B2 (en) 2010-12-21 2016-05-31 Merck Sharp & Dohme Corp. Indazole derivatives useful as ERK inhibitors
AU2012245971A1 (en) 2011-04-21 2013-10-17 Piramal Enterprises Limited A crystalline form of a salt of a morpholino sulfonyl indole derivative and a process for its preparation
EP2770987B1 (en) 2011-10-27 2018-04-04 Merck Sharp & Dohme Corp. Novel compounds that are erk inhibitors
EP3358013B1 (en) 2012-05-02 2020-06-24 Sirna Therapeutics, Inc. Short interfering nucleic acid (sina) compositions
CN105050598B (zh) 2012-09-28 2018-04-27 默沙东公司 作为erk抑制剂的新型化合物
WO2014063061A1 (en) 2012-10-19 2014-04-24 Dana-Farber Cancer Institute, Inc. Hydrophobically tagged small molecules as inducers of protein degradation
BR112015012295A8 (pt) 2012-11-28 2023-03-14 Merck Sharp & Dohme Uso de um inibidor de wee1, e, kit para identificar um paciente com câncer
BR112015013611A2 (pt) 2012-12-20 2017-11-14 Merck Sharp & Dohme composto, e, composição farmacêutica
US9540377B2 (en) 2013-01-30 2017-01-10 Merck Sharp & Dohme Corp. 2,6,7,8 substituted purines as HDM2 inhibitors
US20160194368A1 (en) 2013-09-03 2016-07-07 Moderna Therapeutics, Inc. Circular polynucleotides
CN105849099B (zh) 2013-10-18 2020-01-17 达纳-法伯癌症研究所股份有限公司 周期蛋白依赖性激酶7(cdk7)的多环抑制剂
ES2676734T3 (es) 2013-10-18 2018-07-24 Syros Pharmaceuticals, Inc. Compuestos heteroatómicos útiles para el tratamiento de enfermedades proliferativas
JO3589B1 (ar) 2014-08-06 2020-07-05 Novartis Ag مثبطات كيناز البروتين c وطرق استخداماتها
CA2978518C (en) 2015-03-27 2023-11-21 Nathanael S. Gray Inhibitors of cyclin-dependent kinases
JOP20190055A1 (ar) 2016-09-26 2019-03-24 Merck Sharp & Dohme أجسام مضادة ضد cd27
US10975084B2 (en) 2016-10-12 2021-04-13 Merck Sharp & Dohme Corp. KDM5 inhibitors
EP3609922A2 (en) 2017-04-13 2020-02-19 Aduro Biotech Holdings, Europe B.V. Anti-sirp alpha antibodies
US10947234B2 (en) 2017-11-08 2021-03-16 Merck Sharp & Dohme Corp. PRMT5 inhibitors
WO2019094312A1 (en) 2017-11-08 2019-05-16 Merck Sharp & Dohme Corp. Prmt5 inhibitors
WO2019148412A1 (en) 2018-02-01 2019-08-08 Merck Sharp & Dohme Corp. Anti-pd-1/lag3 bispecific antibodies
WO2020033282A1 (en) 2018-08-07 2020-02-13 Merck Sharp & Dohme Corp. Prmt5 inhibitors
MA53287A (fr) 2018-08-07 2022-05-11 Merck Sharp & Dohme Inhibiteurs de prmt5
EP3833667B1 (en) 2018-08-07 2024-03-13 Merck Sharp & Dohme LLC Prmt5 inhibitors
WO2024180169A1 (en) 2023-03-02 2024-09-06 Carcimun Biotech Gmbh Means and methods for diagnosing cancer and/or an acute inflammatory disease

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308386A (ja) * 1987-01-30 1988-12-15 Sony Corp 半導体装置とその製造方法
JPH01215033A (ja) * 1988-02-24 1989-08-29 Fuji Electric Co Ltd 半導体チップ用ボンディングパッド
JP3077034B2 (ja) * 1990-07-25 2000-08-14 セイコーインスツルメンツ株式会社 半導体イメージセンサ装置
KR930006732B1 (ko) * 1991-05-08 1993-07-23 재단법인 한국전자통신연구소 전기적 특성을 갖는 구조물이 매립된 반도체기판 및 그 제조방법
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
US5213990A (en) * 1992-04-01 1993-05-25 Texas Instruments, Incorporated Method for forming a stacked semiconductor structure

Also Published As

Publication number Publication date
WO1996016443A1 (en) 1996-05-30
KR100389754B1 (ko) 2003-10-17
DE69507284D1 (de) 1999-02-25
US5739591A (en) 1998-04-14
DE69507284T2 (de) 1999-07-01
JPH09508502A (ja) 1997-08-26
EP0740853B1 (en) 1999-01-13
EP0740853A1 (en) 1996-11-06
JP4319251B2 (ja) 2009-08-26

Similar Documents

Publication Publication Date Title
KR970700942A (ko) 반도체 장치(semiconductor device with a carrier body on which a substrate with a semiconductor element is fastened by means of a gluelayer and on which a pattern of conductor tracks is fastened)
MY130168A (en) Semiconductor device and manufacturing method thereof
KR950034534A (ko) 반도체장치의 제조방법
KR890003036A (ko) 반도체장치
KR920015496A (ko) 반도체장치
JPS56157058A (en) Semiconductor device and method of manufacturing same
EP0380327A3 (en) Structure of semiconductor device with funnel-shaped inter-level connection
KR970077084A (ko) 저비용의 볼 그리드 어레이 장치 및 그 제조 방법
KR870005450A (ko) 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
KR940016513A (ko) 반도체소자의 저저항 접촉형성방법
KR960705353A (ko) 표면 장착용 반도체 장치 제조 방법 및 표면 장착용 반도체 장치(Method of manufacturing a semiconductor device for surface mounting. and semiconductor device for surface mounting)
KR980006525A (ko) 반도체장치 반도체 집적 장치 및 반도체 장치의 제조방법
WO1996036072A3 (en) Method of manufacturing a device, by which method a substrate with semiconductor element and conductor tracks is glued to a support body with metallization
TW337590B (en) Manufacture of semiconductor device having reliable and fine connection hole
DE60004173D1 (de) Induktives elektronisches bauteil, und herstellungsverfahren
SE9000245D0 (sv) Halvledarkomponent och foerfarande foer dess framstaellning
KR970060467A (ko) 반도체장치
IE822564L (en) Fabrication a semiconductor device having a phosphosilicate glass layer
KR900017129A (ko) 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법
EP0208877A3 (en) Method of manufacturing semiconductor devices having connecting areas
KR910003783A (ko) 반도체장치 및 그 제조방법
EP0448713A4 (en) Semiconductor device.
DE69838507D1 (de) Gesicherte integrierte halbleiterschaltungsanordnung und herstellungsverfahren
NL190591C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting welke een element-isolerend gebied op een halfgeleidersubstraat omvat.
DE60236657D1 (de) Em soi-substrat

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 19960720

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20001016

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20020729

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20030422

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20030619

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20030620

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20060614

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20070607

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20080530

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20090609

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20100610

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20110613

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20120502

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20130531

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20130531

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20140609

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20140609

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20150605

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20150605

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term