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KR910019060A - 불휘발성 반도체 기억장치 - Google Patents

불휘발성 반도체 기억장치 Download PDF

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Publication number
KR910019060A
KR910019060A KR1019910005833A KR910005833A KR910019060A KR 910019060 A KR910019060 A KR 910019060A KR 1019910005833 A KR1019910005833 A KR 1019910005833A KR 910005833 A KR910005833 A KR 910005833A KR 910019060 A KR910019060 A KR 910019060A
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KR
South Korea
Prior art keywords
memory
nonvolatile semiconductor
transistors
gate
substrate
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Application number
KR1019910005833A
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KR950011726B1 (ko
Inventor
세이이치 아리토메
리이치로 시로타
료우헤이 기리사와
요시히사 이와타
마사키 모모도미
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
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Publication of KR950011726B1 publication Critical patent/KR950011726B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

내용 없음

Description

불휘발성 반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 1실시예에 따른 NAND셀형 EEPROM의 데이터소거시의 전위관계를 나타낸 도면, 제6도는 다른 실시예의 NOR형 EEPROM의 데이터소거시의 전위관계를 나타낸 도면.

Claims (5)

  1. 반도체기판상에 절연막을 매개로 부유게이트(4)와 제어게이트(6)가 적층형성된 적어도 1개의 메모리 트랜지스터와 이 메모리 트랜지스터에 직렬접속된 선택게이트 트랜지스터(QS1,QS2)를 갖춘 불휘발성 반도체기억장치에 있어서, 메모리 트랜지스터의 제어게이트(6)를 OV로 하고, 기판에 고전압을 인가해서 메모리 트랜지스터의 부유게이트(4)의 전자를 방출시키는 데이터소거시, 선택게이트 트랜지스터(QS1,QS2)의 게이트전극에 기판에 인가되는 고전위와 동극성의 소정전위를 인가하도록 된 것을 특징으로 하는 불휘발성 반도체 기억장치.
  2. 제1항에 있어서, 상기 선택게이트 트랜지스터(QS1,QS2)의 게이트 전극에 인가하는 소정전위가 그 아래의 절연막(32)에 걸리는 전계를 약하게 하는 값으로 설정된 것을 특징으로 하는 불휘발성 반도체 기억장치.
  3. 반도체 기판상에 절연막을 매개로 부유게이트(4)와 제어게이트(6)가 적층형성된 복수의 메모리 트랜지스터(M1∼M4)를 이용한 메모리셀어레이를 갖춘 불휘발성 반도체 기억장치에 있어서, 셀어레이내의 메모리 트랜지스터(M1∼M4)의 제어게이트(6)를 OV로 하고 기판에 고전압을 인가해서 메모리 트랜지스터(M1∼M4)의 부유게이트(4)의 전자를 방출시키는 데이터 소거시, 셀어레이내의 소거하지 않을 메모리 트랜지스터의 제어게이트(6)에 기판에 인가되는 고전위와 동일극성의 소정전위를 인가하도록 된 것을 특징으로 하는 불휘발성 반도체 기억장치.
  4. 제3항에 있어서, 상기 소거하지 않을 메모리 트랜지스터의 제어게이트(6)에 인가하는 소정전위가 그 아래의 절연막(31)에 걸리는 전계를 약한 값으로 설정하도록 된 것을 특징으로 하는 불휘발성 반도체 기억장치.
  5. 제3항에 있어서, 상기 셀어레이가 복수의 메모리 트랜지스터(M1∼M4)의 소오스, 드레인을 인접한 것끼리 공용하는 모양으로 직렬접속한 NAND셀을 배열해서 구성된 것을 특징으로 하는 불휘발성 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910005833A 1990-04-12 1991-04-12 전기적 소거가 가능한 불휘발성 반도체기억장치와 그 선택적 데이터 소거방법 및 전기적 소거 및 프로그램이 가능한 리드온리 메모리 Expired - Lifetime KR950011726B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-095049 1990-04-12
JP9504990A JP3099887B2 (ja) 1990-04-12 1990-04-12 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
KR910019060A true KR910019060A (ko) 1991-11-30
KR950011726B1 KR950011726B1 (ko) 1995-10-09

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KR1019910005833A Expired - Lifetime KR950011726B1 (ko) 1990-04-12 1991-04-12 전기적 소거가 가능한 불휘발성 반도체기억장치와 그 선택적 데이터 소거방법 및 전기적 소거 및 프로그램이 가능한 리드온리 메모리

Country Status (4)

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US (3) US5293337A (ko)
JP (1) JP3099887B2 (ko)
KR (1) KR950011726B1 (ko)
DE (1) DE4112070C2 (ko)

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JPH03295097A (ja) 1991-12-26
US5528547A (en) 1996-06-18
US5293337A (en) 1994-03-08
US5402373A (en) 1995-03-28
DE4112070C2 (de) 1995-08-10
KR950011726B1 (ko) 1995-10-09
JP3099887B2 (ja) 2000-10-16
DE4112070A1 (de) 1991-10-17

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