KR910008867A - 반도체장치의 제조방법과 그것에 사용하는 바이어스 이씨알씨브이디장치 - Google Patents
반도체장치의 제조방법과 그것에 사용하는 바이어스 이씨알씨브이디장치Info
- Publication number
- KR910008867A KR910008867A KR1019900017101A KR900017101A KR910008867A KR 910008867 A KR910008867 A KR 910008867A KR 1019900017101 A KR1019900017101 A KR 1019900017101A KR 900017101 A KR900017101 A KR 900017101A KR 910008867 A KR910008867 A KR 910008867A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- device used
- bias
- lcd device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Drying Of Semiconductors (AREA)
- Local Oxidation Of Silicon (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1277929A JP2870054B2 (ja) | 1989-10-25 | 1989-10-25 | 半導体装置の製造方法 |
JP1-277929 | 1989-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910008867A true KR910008867A (ko) | 1991-05-31 |
KR100188896B1 KR100188896B1 (ko) | 1999-07-01 |
Family
ID=17590254
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900017101A KR100188896B1 (ko) | 1989-10-25 | 1990-10-25 | 반도체장치의 제조방법과 그것에 사용하는 바이어스 이씨알씨브이디장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5242853A (ko) |
EP (1) | EP0424905B1 (ko) |
JP (1) | JP2870054B2 (ko) |
KR (1) | KR100188896B1 (ko) |
DE (1) | DE69030709T2 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0539804B1 (en) * | 1991-10-15 | 1998-03-04 | Canon Kabushiki Kaisha | A substrate for a liquid jet recording head, a manufacturing method for such a substrate, a liquid jet recording head, and a liquid jet recording apparatus |
US5244827A (en) * | 1991-10-31 | 1993-09-14 | Sgs-Thomson Microelectronics, Inc. | Method for planarized isolation for cmos devices |
DE69232648T2 (de) * | 1991-11-29 | 2003-02-06 | Sony Corp., Tokio/Tokyo | Verfahren zur Herstellung einer Grabenisolation mittels eines Polierschritts und Herstellungsverfahren für eine Halbleitervorrichtung |
EP0637062B1 (de) * | 1993-07-27 | 1997-06-04 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines Halbleiterschichtaufbaus mit planarisierter Oberfläche und dessen Verwendung bei der Herstellung eines Bipolartransistors sowie eines DRAM |
FR2727768B1 (fr) * | 1994-12-05 | 1997-01-10 | Alcatel Nv | Procede pour former une couche de silice a eliminer ulterieurement et procede pour rapporter un composant en optique integree |
US5851899A (en) * | 1996-08-08 | 1998-12-22 | Siemens Aktiengesellschaft | Gapfill and planarization process for shallow trench isolation |
KR100226736B1 (ko) * | 1996-11-07 | 1999-10-15 | 구본준 | 격리영역 형성방법 |
US5858866A (en) * | 1996-11-22 | 1999-01-12 | International Business Machines Corportation | Geometrical control of device corner threshold |
US5721173A (en) * | 1997-02-25 | 1998-02-24 | Kabushiki Kaisha Toshiba | Method of forming a shallow trench isolation structure |
US5728621A (en) * | 1997-04-28 | 1998-03-17 | Chartered Semiconductor Manufacturing Pte Ltd | Method for shallow trench isolation |
US6046088A (en) * | 1997-12-05 | 2000-04-04 | Advanced Micro Devices, Inc. | Method for self-aligning polysilicon gates with field isolation and the resultant structure |
US6228741B1 (en) | 1998-01-13 | 2001-05-08 | Texas Instruments Incorporated | Method for trench isolation of semiconductor devices |
JPH11233609A (ja) * | 1998-02-13 | 1999-08-27 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US6048775A (en) * | 1999-05-24 | 2000-04-11 | Vanguard International Semiconductor Corporation | Method to make shallow trench isolation structure by HDP-CVD and chemical mechanical polish processes |
US6261957B1 (en) | 1999-08-20 | 2001-07-17 | Taiwan Semiconductor Manufacturing Company | Self-planarized gap-filling by HDPCVD for shallow trench isolation |
US7554055B2 (en) * | 2005-05-03 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making ohmic contact to silicon structures with low thermal loads |
JP2007173383A (ja) * | 2005-12-20 | 2007-07-05 | Sharp Corp | トレンチ素子分離領域の形成方法、窒化シリコン膜ライナーの形成方法、半導体装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
US4274909A (en) * | 1980-03-17 | 1981-06-23 | International Business Machines Corporation | Method for forming ultra fine deep dielectric isolation |
US4564997A (en) * | 1981-04-21 | 1986-01-21 | Nippon-Telegraph And Telephone Public Corporation | Semiconductor device and manufacturing process thereof |
JPS59942A (ja) * | 1982-06-28 | 1984-01-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS6021540A (ja) * | 1983-07-15 | 1985-02-02 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置の製造方法 |
JPS6053045A (ja) * | 1983-09-02 | 1985-03-26 | Hitachi Ltd | 絶縁分離方法 |
JPS618945A (ja) * | 1984-06-25 | 1986-01-16 | Nec Corp | 半導体集積回路装置 |
US4554728A (en) * | 1984-06-27 | 1985-11-26 | International Business Machines Corporation | Simplified planarization process for polysilicon filled trenches |
JPS622554A (ja) * | 1985-06-27 | 1987-01-08 | Seiko Epson Corp | 半導体装置の製造方法 |
US4666556A (en) * | 1986-05-12 | 1987-05-19 | International Business Machines Corporation | Trench sidewall isolation by polysilicon oxidation |
US4851366A (en) * | 1987-11-13 | 1989-07-25 | Siliconix Incorporated | Method for providing dielectrically isolated circuit |
JP2717549B2 (ja) * | 1988-07-07 | 1998-02-18 | 株式会社興人 | 御影石調人工ソリッド材 |
JPH0294050A (ja) * | 1988-09-30 | 1990-04-04 | Toshiba Corp | インパクトジッタ軽減回路 |
IT1225625B (it) * | 1988-11-03 | 1990-11-22 | Sgs Thomson Microelectronics | Procedimento per la realizzazione di strutture di isolamento incassate nel substrato di silicio per dispositivi cmos ed nmos. |
-
1989
- 1989-10-25 JP JP1277929A patent/JP2870054B2/ja not_active Expired - Fee Related
-
1990
- 1990-10-24 EP EP90120394A patent/EP0424905B1/en not_active Expired - Lifetime
- 1990-10-24 DE DE69030709T patent/DE69030709T2/de not_active Expired - Fee Related
- 1990-10-25 KR KR1019900017101A patent/KR100188896B1/ko not_active IP Right Cessation
- 1990-10-25 US US07/603,310 patent/US5242853A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69030709T2 (de) | 1997-12-18 |
JP2870054B2 (ja) | 1999-03-10 |
US5242853A (en) | 1993-09-07 |
JPH03139858A (ja) | 1991-06-14 |
KR100188896B1 (ko) | 1999-07-01 |
EP0424905B1 (en) | 1997-05-14 |
EP0424905A3 (en) | 1992-08-12 |
DE69030709D1 (de) | 1997-06-19 |
EP0424905A2 (en) | 1991-05-02 |
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