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KR890002286A - 플라즈마 향상된 산화규소 부착방법 및 진공시스템 - Google Patents

플라즈마 향상된 산화규소 부착방법 및 진공시스템 Download PDF

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KR890002286A
KR890002286A KR1019880008851A KR880008851A KR890002286A KR 890002286 A KR890002286 A KR 890002286A KR 1019880008851 A KR1019880008851 A KR 1019880008851A KR 880008851 A KR880008851 A KR 880008851A KR 890002286 A KR890002286 A KR 890002286A
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에스 로파타 유우진
티이 휄츠 존
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더 비이오우시이 그루우프 인코포레이팃드
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C—CHEMISTRY; METALLURGY
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

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Abstract

내용 없음

Description

플라즈마 향상된 산화규소 부착방법 및 진공시스템
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 여러 양상을 이용한 플라즈마 시스템을 설명하는 일반적인 개략도이다.
제2도는 플라즈마 부착실(chamber) 및 그와 연관된 장치의 단면도를 도식적으로 설명하고 있다.
제3A도 및 제3B도는 제2도의 시스템내 균형을 이룬 마그네트론(magnetron)의 사용을 설명하고 있다.

Claims (32)

  1. 휘발된 유기 규소 화합물, 산소 및 불활성 기체를 포함하는 기체 스트림을 제공하고 ; 플라즈마에서 제거가능하게 배치될 수 있는 기판을 포함하는 미리 배기된 실(chamber)so 스트림으로부터 유도된 글로우방전(glow discharge)플라즈마를 만들고 ; 플라즈마안에 배치될 때 기판상에 산화 규소를 부착시키기 위해서 플라즈마내로 기체 스트림을 흘려보내는 것을 포함하는 것으로, 이때 부착된 산화 규소가 기체 스트림의 반응 생성물이며, 부착하는 동안 실이 약 100μ보다 작은 압력에서 유지되는 부착성 산화 규소 기재필름을 부착시키는 방법.
  2. 제1항에 있어서, 이온 플럭스(flux)를 증가시키기 위해 부착하는 동안 기판에 인접한 플랄즈마의 적어도 일부분을 자기적으로 제한하는 것이 포함된 방법.
  3. 제1항에 있어서, 플라즈마내로 흐르는 유기규소 화합물이 조정 가능하게 조절된 양인 방법.
  4. 제3항에 있어서, 플라즈마내로 흐르는 기체 스트림의 유기 규소 화합물 및 산소가 약 1.2:1-약1:1.8의 흐름 속도 비율내에 있고 플라즈마내로 흐르는 기체 스트림의 불활성 기체가 부착속도 및 부착된 산화규소의 경도를 증가시키기에 유효량의 헬륨 또는 아르곤인 방법.
  5. 제1항에 있어서, 불활성 기체가 헬륨이고, 플라즈마내로 흐르는 기체 스트림이 약 1.2 : 1-약 1 : 1.8 범위 비율의 유기 규소 화합물과 산소, 및 약 1 : 1.5-1 : 2.3 범위 비율의 유기 규소 화합물과 헬륨을 포함하는 방법.
  6. 제1항 또는 제5항에 있어서, 유기 규소 화합물이 1,1,3,3-테트라메틸디실록산, 헥사메틸디실록산, 비닐 트리메틸실란, 메틸트리 메톡시실란, 비닐트리메톡시실란 또는 헥사메틸디실라잔인 방법.
  7. 제1항에 있어서, 부착된 산화규소가 본질적으로 무기물인 방법.
  8. 제1항에 있어서, 분활성 기체가 헬륨이고, 기체 스트림이 소량의 프로필렌을 포함하고 있으며, 부착된 산화규소가 탄소부분을 포함하는 방법.
  9. 제1항에 있어서, 기체 스트림이 소량의 질소 또는 아산화 질소를 포함하고, 부착된 산화규소가 질소부분을 포함하는 방법.
  10. 제1항에 있어서, 부착시키는 동안 실이 약 20-약100μ의 압력에서 유지되는 방법.
  11. 제10항에 있어서, 부착시키는 동안 실이 약 43-약49μ의 압력에서 유지되는 방법.
  12. 제1항에 있어서, 부착시키는 동안 기판이 플라즈마 안팎으로 이동되는 방법.
  13. 유기 규소성분을 증발시키고 휘발된 유기 규소성분을 산소성분 및 불활성 기체성분과 혼합시켜 실 외부에 기체 스트림을 형성하고 ; 하나 또는 그 이상의 기체 스트림 성분으로부터 실안에 글로우방전 플라즈마를 만들고 ; 플라즈마의 적어도 일부분을 제한하면서 플라즈마내로 기체스트림을 조절 가능하게 흘려보내고 ; 제한된 플라즈마네 인접한 플라즈마 안팎으로 기판을 이동시키는 것을 포함하는, 글로우 방전에 의해 미리 배기된 실에서 경질의, 본질적으로 무기 산화 규소 기체 필름을 부착시키는 방법.
  14. 제13항에 있어서, 유기 규소성분이 1,1,3,3-테트라메틸디실록산, 헥사메틸디실록산, 비닐트리메틸실란, 메틸트리메톡시실란, 비닐트리메톡시실란 또는 헥사메틸디실라잔인 방법.
  15. 제13항에 있어서, 불활성 기체성분이 헬륨이고, 기체 스트림으 유기 규소성분 및 산호사 약 1.2 : 1- 1: 1.8의 기체 흐름 비율로 있고, 유기 규소성분 및 헬륨이 약 1 : 1.5-1: 2.3의 기체 흐름 비율로 있는 방법.
  16. 제13항에 있어서, 흘려 보내는 동안 실이 약 20 - 약100μ의 압력에 있는 방법.
  17. 제13항에 있어서, 플라즈마가 불균형 마그네트론에 의해 제한되는 방법.
  18. 제17항에 있어서, 진공 펌프가 실과 통하는 유체안에 있고, 마그네트론으로부터 일정한 거리에 있으며, 기처 스트림이 플라즈마내로 진공 펌프 상류 및 마그네트론 하류로 흐르는 방법.
  19. 제13항에 있어서, 기판이 이동하는 동안 약 80℃이하의 온도에 있는 방법.
  20. 제13항에 있어서, 제한된 플라즈마와 접촉시키는 것을 제외하곤 기판을 실로부터 전기적으로 분리시키는 방법.
  21. 제13항에 있어서, 기판이 유리, 플라스틱 미네랄 또는 금속인 방법.
  22. 휘발된 유기 규소 화합물을 포함하는 기체 스트림을 제공하고 ; 플라즈마내에 제거 가능하게 배치된 기판을 포함하는, 약 10-6토르로 미리 배기된 실내 기체 스트림으로부터 유도된 글로우 방전 플라즈마를 만들고 ; 약 25-약 100μ의 실내 압력을 만들기 위해서 충분한 기체 스트림을 흘려보내고 플라즈마안에 배치되었을 때 기판상에 산화 규소 필름을 부착시키고 그 동안 이곳에 이온 플럭스를 증가시키기 위해 부착시키는 동안 기판에 인접한 플라즈마의 적어도 일부분을 자기적으로 제한하는 것을 포함하는 플라즈마 향상된 얇은 필름 부착방법.
  23. 하기 기판위에 부착되는 원하는 물질의 급원을 포함하는 기체 스트림을 하기실에 제공하고, 높은 전기 장강도의 영역에서 상기 스트림의 기체로부터 유도된 글로우 방전 플라즈마를 상기 실안에 만들어 놓고, 어떠한 전기적 연결없이 상기 플라즈마내에 기판을 제거가능하게 배치하고, 상기 기판으로 향한 충분한 자속(magnetic flux)을 갖는 자기장을 상기 플라즈마내에 발생시키는 단계를 포함하는 배기된 실안에서 플라즈마 공정에 의해 기판상에 얇은 필름을 부착시키는 방법.
  24. 제23항에 있어서, 자기력을 발생시키는 단계가 상기 실안에 불균형 마그네트론을 배치하는 것을 포함하는 방법.
  25. 제23항에 있어서, 본질적으로 약 43-약49μ범위의 압력으로 실을 배기시키는 단계를 포함하는 방법.
  26. 제23항에 있어서, 자속을 발생시키는 단계가 상기 실안에 두 자기극 쌍을 배치시키는 것을 포함하고, 각 쌍의 첫 번째 자기극이 상기 플라즈마를 향해 배향되고, 각 쌍의 두 번째 자기극이 상기 플라즈마로부터 떨어진 면을 향해 배향되는 방법.
  27. 제23항에 있어서, 자속을 발생시키는 단계가 또 다른 극성의 보다 작은 자기 강도에 의해 분리된 한 극성의 최대 자기 강도로부터 변화하는, 플라즈마에 걸쳐 본질적으로 모든 방향에서의 자속 분포기능을 특징으로 하는 플라즈마에 인접한 표면을 갖는 자기구조를 상기 실안에 배치하는 것을 포함하는 방법.
  28. 글로우 방전에 의해 미리 배기된 실안에 배치된 기판상에 물질의 얇은 필름을 배치시키는 진공시스템에 있어서 주위 온도 이상의 끊는 점을 갖는 액체를 증발시키고, 미리 배기된 실 안으로 증기의 조절된 흐름을 전달시키기에 충분한 구조를 가진 증발기 ; 증기로부터 실안에 글로우 방전 플라즈마를 만들기 위한 전기적 수단 ; 실안에 배치된 기판 ; 및, 기판으로 향한 충분한 자속을 갖는 플랍즈마안에 자기장을 발생시키기 위한 자기 수단을 포함하는 것을 특징으로 하는 진공시스템.
  29. 제28항에 있어서, 기체 스트림으로서 실안에 증기와 함께 적어도 하나으 l부가적인 기체를 도입시키기에 적합한 적어도 하나의 부가적인 기체 공급원이 포함된 것으로, 글로우 방전 플라즈마의 상기 기체 스트림으로부터 형성되는 진공시스템.
  30. 제28항 또는 제29항에 있어서, 자기수단이 실안에 배치된 불균형 마그네트론을 포함하는 진공시스템.
  31. 제28항 또는 제29항에 있어서, 자기수단이 실안에 배치된 두 자기극 쌍을 포함하며, 이때 각 쌍의 첫 번째 자기극이 플라즈마을 향해 배향되어 있고 각 쌍의 두 번째 자기극이 플라즈마에서 떨어진 면을 향해 배향되어 있는 진공시스템.
  32. 제28항 또는 제29항에 있어서, 자기수단이 또 다른 극성의 보다 작은 자기강도에 의해 분리된 한 극성의 최대 자기강도로부터 변화하는, 플라즈마에 걸쳐, 본질적으로 모든 방향으로 자속분포기능을 특징으로 하는 플라즈마에 인접한 표면을 갖는 실안에 배치된 자기구조를 포함하는 진공시스템.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880008851A 1987-07-15 1988-07-14 플라즈마 강화 산화 규소 필름 부착 방법 및 그를 위한 진공 시스템 Expired - Fee Related KR930011764B1 (ko)

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MX170794B (es) 1993-09-15
EP0299754A3 (en) 1991-01-30
US5904952A (en) 1999-05-18
CN1030616A (zh) 1989-01-25
DE3884697D1 (de) 1993-11-11
DE3884697T2 (de) 1994-01-27
RU2030483C1 (ru) 1995-03-10
ATE95574T1 (de) 1993-10-15
JP2634637B2 (ja) 1997-07-30
ES2043826T3 (es) 1994-01-01
UA12650A (uk) 1997-02-28
EP0299754A2 (en) 1989-01-18
AU606715B2 (en) 1991-02-14
JPS6487772A (en) 1989-03-31
EP0299754B1 (en) 1993-10-06
KR930011764B1 (ko) 1993-12-20
ZA884511B (en) 1989-03-29
CA1340053C (en) 1998-09-22

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