KR20050118302A - 반도체 웨이퍼 가공용 베이스 필름 - Google Patents
반도체 웨이퍼 가공용 베이스 필름 Download PDFInfo
- Publication number
- KR20050118302A KR20050118302A KR1020057018820A KR20057018820A KR20050118302A KR 20050118302 A KR20050118302 A KR 20050118302A KR 1020057018820 A KR1020057018820 A KR 1020057018820A KR 20057018820 A KR20057018820 A KR 20057018820A KR 20050118302 A KR20050118302 A KR 20050118302A
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- KR
- South Korea
- Prior art keywords
- film
- semiconductor wafer
- base film
- less
- wafer processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
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- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010977 jade Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 229910001386 lithium phosphate Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- GVALZJMUIHGIMD-UHFFFAOYSA-H magnesium phosphate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GVALZJMUIHGIMD-UHFFFAOYSA-H 0.000 description 1
- 239000004137 magnesium phosphate Substances 0.000 description 1
- 229910000157 magnesium phosphate Inorganic materials 0.000 description 1
- 229960002261 magnesium phosphate Drugs 0.000 description 1
- 235000010994 magnesium phosphates Nutrition 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229940071125 manganese acetate Drugs 0.000 description 1
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- SINKDKBDOQKXDM-UHFFFAOYSA-N manganese;tetrahydrate Chemical compound O.O.O.O.[Mn] SINKDKBDOQKXDM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- DNTMQTKDNSEIFO-UHFFFAOYSA-N n-(hydroxymethyl)-2-methylprop-2-enamide Chemical compound CC(=C)C(=O)NCO DNTMQTKDNSEIFO-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- BPCNEKWROYSOLT-UHFFFAOYSA-N n-phenylprop-2-enamide Chemical group C=CC(=O)NC1=CC=CC=C1 BPCNEKWROYSOLT-UHFFFAOYSA-N 0.000 description 1
- DFFZOPXDTCDZDP-UHFFFAOYSA-N naphthalene-1,5-dicarboxylic acid Chemical compound C1=CC=C2C(C(=O)O)=CC=CC2=C1C(O)=O DFFZOPXDTCDZDP-UHFFFAOYSA-N 0.000 description 1
- 229930014626 natural product Natural products 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229920002601 oligoester Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229940059574 pentaerithrityl Drugs 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000005496 phosphonium group Chemical group 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium(IV) ethoxide Substances [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- RUELTTOHQODFPA-UHFFFAOYSA-N toluene 2,6-diisocyanate Chemical compound CC1=C(N=C=O)C=CC=C1N=C=O RUELTTOHQODFPA-UHFFFAOYSA-N 0.000 description 1
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- QORWJWZARLRLPR-UHFFFAOYSA-H tricalcium bis(phosphate) Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O QORWJWZARLRLPR-UHFFFAOYSA-H 0.000 description 1
- TWQULNDIKKJZPH-UHFFFAOYSA-K trilithium;phosphate Chemical compound [Li+].[Li+].[Li+].[O-]P([O-])([O-])=O TWQULNDIKKJZPH-UHFFFAOYSA-K 0.000 description 1
- 229940096522 trimethylolpropane triacrylate Drugs 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 125000002348 vinylic group Chemical group 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/255—Polyesters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Laminated Bodies (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003103908 | 2003-04-08 | ||
JPJP-P-2003-00103908 | 2003-04-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20050118302A true KR20050118302A (ko) | 2005-12-16 |
Family
ID=33156837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018820A Ceased KR20050118302A (ko) | 2003-04-08 | 2004-04-06 | 반도체 웨이퍼 가공용 베이스 필름 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPWO2004090962A1 (zh) |
KR (1) | KR20050118302A (zh) |
CN (1) | CN1771585A (zh) |
TW (1) | TW200426934A (zh) |
WO (1) | WO2004090962A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100944274B1 (ko) * | 2008-11-28 | 2010-02-25 | 스템코 주식회사 | 연성 회로 기판 및 그 제조 방법, 상기 연성 회로 기판을 포함하는 반도체 패키지 및 그 제조 방법 |
WO2009131363A3 (ko) * | 2008-04-21 | 2010-03-11 | (주)Lg화학 | 점착 필름 및 이를 사용한 백그라인딩 방법 |
KR101494682B1 (ko) * | 2006-04-03 | 2015-02-23 | 군제 가부시키가이샤 | 반도체 웨이퍼의 백그라인드 공정에 이용하는 표면 보호 테이프 및 표면 보호 테이프용 기판 필름 |
KR20170131504A (ko) * | 2015-03-24 | 2017-11-29 | 후루카와 덴키 고교 가부시키가이샤 | 반도체 가공용 테이프 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4666565B2 (ja) * | 2003-10-06 | 2011-04-06 | 日東電工株式会社 | 半導体ウエハ加工用保護シート及び半導体ウエハの裏面研削方法 |
JP4622360B2 (ja) * | 2004-07-23 | 2011-02-02 | 東レ株式会社 | 積層ポリエステルフィルム |
JP2006316218A (ja) * | 2005-05-16 | 2006-11-24 | Teijin Dupont Films Japan Ltd | 二軸配向ポリエステルフィルム |
JP4907965B2 (ja) * | 2005-11-25 | 2012-04-04 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP5030461B2 (ja) * | 2006-04-03 | 2012-09-19 | グンゼ株式会社 | 半導体ウェハの裏面研削に用いる表面保護テープ用基材フィルム |
JP2008047558A (ja) * | 2006-08-10 | 2008-02-28 | Nitto Denko Corp | 反り抑制ウエハ研削用粘着シート |
JP5080039B2 (ja) * | 2006-08-21 | 2012-11-21 | 帝人デュポンフィルム株式会社 | 自動車駆動モーター用二軸配向ポリエステルフィルム |
JP5008999B2 (ja) * | 2007-02-06 | 2012-08-22 | リンテック株式会社 | ダイシングテープおよび半導体装置の製造方法 |
JP5014909B2 (ja) * | 2007-07-24 | 2012-08-29 | リンテック株式会社 | 印刷用積層シート |
JP5249796B2 (ja) * | 2009-01-19 | 2013-07-31 | 帝人デュポンフィルム株式会社 | フレキシブルプリント回路基板補強用フィルム、フレキシブルプリント回路基板補強板およびフレキシブルプリント回路基板積層体 |
TWI418604B (zh) * | 2010-11-17 | 2013-12-11 | Furukawa Electric Co Ltd | Semiconductor wafer processing tape |
JP2015189960A (ja) * | 2014-03-29 | 2015-11-02 | 三菱樹脂株式会社 | ポリエステルフィルム |
JP6295135B2 (ja) * | 2014-04-24 | 2018-03-14 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
JP2017005072A (ja) * | 2015-06-09 | 2017-01-05 | 日東電工株式会社 | 半導体ウエハ保護用粘着シート |
JP6109356B1 (ja) * | 2015-11-07 | 2017-04-05 | 三菱樹脂株式会社 | 積層ポリエステルフィルム |
JP7100957B2 (ja) * | 2015-12-15 | 2022-07-14 | 積水化学工業株式会社 | 半導体保護テープ |
JP1574161S (zh) * | 2016-08-31 | 2017-04-17 | ||
SG11201906507PA (en) * | 2018-03-28 | 2019-11-28 | Furukawa Electric Co Ltd | Tape for semiconductor processing |
JP7400263B2 (ja) * | 2018-08-23 | 2023-12-19 | 東レ株式会社 | フィルム、及びフィルムの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3169407B2 (ja) * | 1991-12-24 | 2001-05-28 | 三井化学株式会社 | 半導体ウェハ裏面の金属蒸着方法 |
JPH10214801A (ja) * | 1997-01-31 | 1998-08-11 | Teijin Ltd | ダイシングテープ |
JP2002270560A (ja) * | 2001-03-07 | 2002-09-20 | Lintec Corp | ウエハの加工方法 |
-
2004
- 2004-04-06 KR KR1020057018820A patent/KR20050118302A/ko not_active Ceased
- 2004-04-06 JP JP2005505286A patent/JPWO2004090962A1/ja active Pending
- 2004-04-06 WO PCT/JP2004/004943 patent/WO2004090962A1/ja active Application Filing
- 2004-04-06 CN CNA2004800094427A patent/CN1771585A/zh active Pending
- 2004-04-07 TW TW093109605A patent/TW200426934A/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101494682B1 (ko) * | 2006-04-03 | 2015-02-23 | 군제 가부시키가이샤 | 반도체 웨이퍼의 백그라인드 공정에 이용하는 표면 보호 테이프 및 표면 보호 테이프용 기판 필름 |
WO2009131363A3 (ko) * | 2008-04-21 | 2010-03-11 | (주)Lg화학 | 점착 필름 및 이를 사용한 백그라인딩 방법 |
KR100944274B1 (ko) * | 2008-11-28 | 2010-02-25 | 스템코 주식회사 | 연성 회로 기판 및 그 제조 방법, 상기 연성 회로 기판을 포함하는 반도체 패키지 및 그 제조 방법 |
KR20170131504A (ko) * | 2015-03-24 | 2017-11-29 | 후루카와 덴키 고교 가부시키가이샤 | 반도체 가공용 테이프 |
Also Published As
Publication number | Publication date |
---|---|
TW200426934A (en) | 2004-12-01 |
TWI294646B (zh) | 2008-03-11 |
WO2004090962A1 (ja) | 2004-10-21 |
JPWO2004090962A1 (ja) | 2006-07-06 |
CN1771585A (zh) | 2006-05-10 |
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