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TW200426934A - Base film for semiconductor wafer processing - Google Patents

Base film for semiconductor wafer processing Download PDF

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Publication number
TW200426934A
TW200426934A TW093109605A TW93109605A TW200426934A TW 200426934 A TW200426934 A TW 200426934A TW 093109605 A TW093109605 A TW 093109605A TW 93109605 A TW93109605 A TW 93109605A TW 200426934 A TW200426934 A TW 200426934A
Authority
TW
Taiwan
Prior art keywords
film
wafer processing
tape
patent application
semiconductor wafer
Prior art date
Application number
TW093109605A
Other languages
Chinese (zh)
Other versions
TWI294646B (en
Inventor
Koji Furuya
Original Assignee
Teijin Dupont Films Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Dupont Films Japan Ltd filed Critical Teijin Dupont Films Japan Ltd
Publication of TW200426934A publication Critical patent/TW200426934A/en
Application granted granted Critical
Publication of TWI294646B publication Critical patent/TWI294646B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

A base film for semiconductor wafer processing is disclosed which mainly contains polyethylene-2,6-naphthalene dicarboxylate, exhibits excellent dimensional stability, smoothness, mechanical strength under high temperature, high humidity conditions, and has an excellent processing aptitude. This base film for semiconductor wafer processing is a biaxially oriented film mainly containing polyethylene-2,6-naphthalene dicarboxylate. The thermal shrinkage rate of this base film when heat-treated at 200 DEG C for 10 minutes is no more than 1.00% in both the film-forming direction and the width direction.

Description

200426934 (1) 玖、發明說明 【發明所屬之技術領域】 本發明有關使用以聚一 2，6—萘二甲酸乙二酯爲主要 成分所製得的雙軸拉伸定向薄膜的半導體晶圓加工用基材 薄膜。詳言之，有關在半導體晶圓加工，特別是在背面磨 削（b a c k g r i n d )過程或切割（d i c i n g )的程中，作爲背 面磨削帶（back grind tape)之基材或切割帶（dicing tape )之基材使用時，具有優異的尺寸安定性、平滑性（ smoothness )、機械性強度的背面磨削帶用或切割帶用基 材薄膜。 【先前技術】 在半導體製造中的晶圓背面之硏磨過程（背面磨削過 程）、及從已完成的晶圓切割1C (積體電路）晶片（chip )的過程（切割過程）中，層合有種種粘著劑的黏著帶， 將使用爲晶圓之固定之用。在背面磨削過程中在表面形成 有電路的晶圓，係在被固定於黏著帶的狀態下進行背面的 硏磨，藉由UV (紫外線）照射或加熱而降減黏著劑之黏 著力後，移送至其次之切割過程。在切割過程中被黏著帶 所固定的晶圓即被切割爲各個1C晶片單元，並與背面磨 削過程時同樣，藉由UV照射或加熱而降減黏著劑之黏著 力之後，一個一個加以取出。所取出的IC晶片即被移送 至下一個黏合（bonding)過程、鑄模（moulding)過程 -4- (2) 200426934 再者，作爲切割帶之黏著薄膜及離模薄膜之基材 ，係使用聚烯烴及其聚合物、聚氯化乙烯及其聚合物 酯、聚碳酸酯、聚醯胺、聚醯亞胺等之塑膠薄膜，惟 由於機械性強度、尺寸安定性、耐熱性、價格等之故 如在日本專利特開平5 — 1 75 3 32號公報，特開平1 — 號公報所揭示，開始採用聚酯薄膜。另一方面，以防 因於聚酯薄膜及矽酮樹脂離模層中所含不純物的矽晶 收率低落爲目的，而揭示有爲聚合觸媒而採用鍺化合 日本專利特開平1 0 — 2 1 4 8 0 1號公報）的方法。又， 樣的低污染性之觀點，在日本專利特開平1 1 — 20105 報揭示有關於背面磨削帶或切割帶之保管上的黏著層 用之離模薄膜的技術。 然而，隨著近來之半導體之高積體化，在急速進 導體晶圓之薄型化中，開發有爲適合於晶圓厚度之薄 的新半導體晶圓加工技術。特別是，由於晶圓厚度變 常薄之故，在來之硏磨方法上，有晶圓之破損或較在 在硏磨上耗費時間等的課題，因而，作爲加工技術而 有例如採用電漿（Plasma)實施蝕刻的方法等。 然而，在新開發的加工方法上，由於加工溫度較 之加工方法爲高溫之故，以在來之聚酯薄膜作爲基材 導體晶圓加工用薄膜方面，仍有其熱尺寸安定性或機 強度的課題。又，在切割過程中，一般在進行帶剝離 藉由加熱或UV照射而減弱黏著劑之黏著力之後，爲 (pickup)各晶片起見實施帶之擴張（expand)的方 薄膜 、聚 最近 ，例 5 8 3 8 止起 圓之 物（ 從同 號公 保護 行半 型化 成非 來者 開發 在來 的半 械性 時， 撿取 法或 -5 - (3) (3)200426934 採用從帶側頂上晶片的方法以在晶片間撬開間隙，惟由於 當加熱時之帶之尺寸收縮大時，則會發生晶片之撿取不良 ，而有半導體晶圓之生產效率惡化的課題。 另一方面，如作爲基材薄膜而使用聚醯亞胺時，由於 吸水率高之故，需要更高的尺寸安定性。 再者，爲改善半導體晶圓之生產性起見，需要經常追 求過程內之潔淨（c 1 ean )化或加工性之改良。 (專利文獻1 )日本專利特開平5 — 1 7 5 3 3 2號公報 (專利文獻2)日本專利特開平1 — 5 8 3 8號公報 (專利文獻3)日本專利特開平10— 214801號公報 (專利文獻4 )日本專利特開平1 1 — 2 0 1 0 5號公報 【發明內容】 〔發明之揭示〕 本發明之目的在於解決如上述的在來技術之課題，以 製得一種在半導體晶圓加工，特別是作爲背面磨削帶之基 材或切割帶之基材使用時，具有高溫下以及高濕度下的優 異的尺寸安定性、平滑性、機械性強度、以及優異的加工 適應性的半導體加工用基材薄膜。 本發明之其他目的及優點，可從下述說明明白。 如採用本發明，本發明之上述目的及優點，可由第1 •一*種半導體晶圓加工用基材薄膜，係以聚一 2，6—蔡二 甲酸乙二酯爲主要成分所製得的雙軸拉伸定向薄膜，其特 徵爲··在2 00 °C下熱處理10分鐘時之薄膜之熱收縮率， -6 - (4) (4)200426934 在薄膜之製膜方向及寬幅方向均爲i· 〇〇%以下，而達成。 又’如採用本發明，本發明之上述目的及優點，亦可 由第2:如上述本發明之第丨項之半導體晶圓加工用基材 薄0吴’其中半導體晶圓加工用基材薄膜，係背面磨削帶用 或切割帶用，而達成。 再者’如採用本發明，本發明之上述目的及優點，亦 可由第3 :如上述本發明之第丨項之半導體晶圓加工用基 材薄膜，其中薄膜之萃取低聚合物（extract 〇lig〇mer)量 爲0.8重量％以下，而薄膜之厚度方向之折射率爲ι.5〇1 以上1 . 5 1 5以下，而達成。 如採用本發明，本發明之上述目的及優點，可由第4 :一種背面磨削帶，係於上述第1或第2之本發明之背面 磨削帶用基材薄膜之1個面上具有黏著劑層，或者，一種 切割帶’係於上述第1或第2之本發明之切割帶用基材薄 膜之單面具有黏著劑層，之至少任何一種而達成。 再者’如採用本發明，本發明之上述目的及優點，可 由第5 : —種背面磨削帶複合物，係於上述第4之本發明 之背面磨削帶之黏著劑層之上再具有離模薄膜，或者，一 種切割帶複合物，係於上述第4之本發明之切割帶之黏著 劑層之上再具有離模薄膜，之至少任何一種而達成。 〔發明之效果〕 本發明之半導體晶圓加工用基材薄膜’係在局溫下以 及高濕度下的優異的尺寸安定性、平滑性及機械強度優異 -7- (5) (5)200426934 者。特別是，作爲半導體晶圓加工所使用的切割帶用或者 背面磨削帶用好用者。 〔爲實施發明之最佳形態〕 <聚一2，6 —蔡—^甲酸乙一醋> 本發明中，半導體晶圓加工用基材薄膜，係以聚- 2 ，6—萘二甲酸乙二酯（以下，簡稱PEN。）爲主要成分 ，而可爲共聚合物亦可爲混合物。該聚- 2，6—萘二甲酸 乙二酯中之主要二羧酸成分，係萘二甲酸，而主要二醇成 分，係乙二醇。在此，萘二甲酸而言，可例舉：2，6-萘 二甲酸、2，7—萘二甲酸、1，5—萘二甲酸等，而此等中 較佳爲2，6-萘二甲酸。又，主要係指本發明之薄膜之 成分的聚合物之構成成分中，全重複單元之至少80莫耳 %爲2，6 —萘二甲酸二乙酯之意，更佳爲90莫耳％以上 ’特佳爲95莫耳％以上。亦即，只要是不致於極端喪失 本發明之聚一 2，6—萘二甲酸乙二酯薄膜本來之特性之下 ，能確保在高溫使用下的尺寸安定性、機械性強度即可。 如係共聚合物的情形，構成主要成分之2，6 -萘二 甲酸二乙酯以外之共聚合物的共聚合成分而言，可使用在 分子內具有2個酯形成性官能基的化合物。此種化合物而 言，可例舉：如乙二酸、己二酸、鄰苯二甲酸、癸二酸、 十二烷二羧酸、間苯二甲酸、對苯二甲酸、1，4一環己烷 二羧酸、4，4’一二苯基二羧酸、苯基氮茚二羧酸、2，7 一萘二殘酸、四氫萘二殘酸、十氫萘二殘酸、二苯醚二錢 -8- (6) (6)200426934 酸等的二羧酸很好用。又，如對羥基苯甲酸、對羥基乙氧 苯甲酸等的羥基羧酸亦很好用。再者，如丙二醇、三甲二 醇、四甲二醇、六甲二醇、環己烷甲二醇、新戊二醇、雙 酚硕之環氧乙烷加成物、雙酚A之環氧乙烷加成物、二 乙二醇、聚環氧乙烷二醇等的2元醇類等亦很好用。 此等化合物可僅以1種使用亦可以2種同時使用。又 ，此等化合物中，酸成分而言，較佳爲間苯二甲酸、對苯 二甲酸、4，4f 一二苯基二羧酸、2，7—萘二羧酸、對羥 基羧酸，而二醇成分而言，較佳爲三甲二醇、六甲二醇、 新戊二醇以及雙酚硕之環氧乙烷加成物。 又，本發明所使用的聚—2，6—萘二甲酸乙二酯，可 爲例如被苯甲酸、甲氧聚烷二醇等的一官能性化合物而將 末端之羥基及/或羧基之一部分或全部加以封鏈者。又， 本發明所使用的聚一 2，6 —萘二甲酸乙二酯可爲例如以極 少量之甘油、異戊四醇等的三官能以上之酯形成性化合物 在實質上可得線狀之聚合物的範圍內加以共聚合者。 再者，本發明之薄膜，可爲除主要成分之聚一 2，6 — 萘二甲酸乙二酯之外，混合有其他有機高分子的混合物。 此種有機高分子而言，可例舉：聚對苯二甲酸乙酯、聚間 苯二甲酸乙酯、聚對苯二甲酸三甲二酯、聚一 4，4’一四 甲二苯二甲酸乙二酯、聚一2，7 —苯二甲酸乙二酯、聚一 2，6—苯二甲酸三甲二醋、聚一 2，6—萘二甲酸新戊二酯 、聚一 2，6—萘二甲酸（雙（4 —伸乙氧基苯基）磺酯等 。此中較佳爲聚間苯二甲酸乙二酯、聚對苯二甲酸三甲二 -9- (7) (7)200426934 酉曰、聚一 2，6—萘二甲酸三甲二酯、聚—2，6—萘二甲酸 (雙（4 一伸乙氧基苯基）硕酯。 與此等PEN混合的有機高分子不僅可以1種，亦可 倂用2種以上。與PEN混合的有機高分子之比例，按聚 合物之重複單元計，爲最多20莫耳％，較佳爲1 〇莫耳％ 以下’特佳爲5莫耳％以下之範圍。此種混合物之製造可 依一般周知的聚酯組成物之製造方法爲實施。 本發明中所使用的聚酯可依在來周知之方法製得。例 如羧酸與乙二醇的反應而直接製得低聚合度聚酯的方法、 或在將二羧酸之低紙烷基酯與乙二醇使用在來周知之酯交 換觸媒以進行酯交換反應的方法之後，在聚合觸媒之存在 下實施聚合反應即可。酯交換反應觸媒而言，可例舉：含 有鈉、鉀、鎂、鈣、鋅、緦、鈦、鉻、錳、鈷的化合物， 而此等化合物可以1種使用或倂用2種以上。聚合觸媒而 言，可例舉··三氧化銻、四氧化銻、五氧化銻、三氯化銻 、三溴化銻、乙醇酸銻、乙酸銻等的銻化合物、以二氧化 鍺所代表的鍺化合物、鈦酸四乙酯、酞酸四丙酯、鈦酸四 苯酯或此等的部分水解分解物、乙二酸氧鈦銨、乙二酸氧 鈦鉀、鈦參個乙醯丙酮化物等的鈦化合物。 上述聚合觸媒中，鍺化合物特別好用。較佳爲將此種 鍺化合物作爲聚縮合反應觸媒，例如在酯化反應或從酯交 換反應完成前至聚合反應剛開始後之間，添加於所製得酯 交換反應物中，在減壓狀態之攪拌下加熱以實施重縮合反 應。本發明中重聚合反應觸媒所用的鍺（Ge )化合物而言 -10- (8) (8)200426934 ’例如將（勺）非晶形氧化鍺、（女）微細的結晶性氧化 鍺、（门）氧化鍺、溶解於水的溶液等很好用。此等氧化 鍺中，如結晶性二氧化鍺、非晶形二氧化鍺、四乙氧基鍺 、四正丁氧基鍺等的鍺化合物很好用，特別是結晶性二氧 化鍺及非晶形二氧化鍺以及非晶形二氧化鍺很好用。 由於重聚合反應觸媒所用的鍺化合物之量，如過少時 則不能獲得足夠的聚合反應之促進效果，又，如極端過多 時則所製得聚酯之軟化點可能降低之故，殘存於聚酯中的 鍺之金屬而言，較佳爲10至1000重量ppm，更佳爲10 至500重量ppm，特佳爲10至200重量ppm。在此，鍺 之含金屬元素之濃度，係將乾燥試樣裝設於掃瞄式電子顯 微鏡（SEM，日立計測機器服務（股）製，商品名「S570 型」）上，使用所連結的能量分散型X線微量分析器（ XMA，（股）堀場製作所製，商品名「EMAX— 7000」） 實施定量分析的値。 如經由酯交換反應而實施聚合時，較佳爲在聚合反應 前以使酯交換觸媒失活化爲目的，含有磷化合物。此種磷 化合物而言，可例舉：磷酸、亞磷酸、膦酸、膦酸酯化合 物以及此等衍生物等，此等可以單獨使用或倂用2種以上 。此中，磷化合物而言，較佳爲下述式（I)所示的膦酸 酯化合物。 R】〇 — C ( 〇 ) — X - P ( Ο ) - ( OR2 ) 2 ......... ( 1 ) 在此，式中之R1及R2爲碳原子數1至4之烷基，X 爲—CH2—或一 CH(Y) -（Y表示苯基。）而R】及R2 -11 - (9) (9)200426934 可互爲不相同。 特佳的磷化合物，爲甲氧羰基甲膦酸、乙氧羰基甲膦 酸、丙氧羰基甲膦酸、丁氧羰基甲膦酸、甲氧羰基二氧磷 基苯基乙酸、乙氧羰基二氧磷基苯基乙酸、丙氧羰基二氧 磷基苯基乙酸以及丁氧羰基二氧磷基苯基乙酸之二甲酯、 二乙酯、二丙酯以及二丁酯。 本發明中，此等膦酸酯化合物之較佳的理由，係由於 較通常作爲安定劑所使用的磷化合物，與金屬化合物間的 反應爲比較緩慢進行之故，聚縮合反應中之金屬化合物之 觸媒活性之持續時間長，結果可減少聚酯中的觸媒之添加 量’且即使對觸媒添加過多量之安定劑，仍然不易影響酯 之熱安定性。 此等磷化合物之添加時期，只要是酯交換反應實質性 完成後則可爲任何時期，例如，可在開始聚縮合反應以前 之大氣壓下，開始聚縮合反應後之減壓下，聚縮合反應之 末期或聚縮合反應之完成後亦即製得聚合物後添加。 磷化合物之合適含量，從聚酯之熱安定性之觀點來看 ，係作爲磷化合物中之磷元素在聚- 2，6—萘二甲酸乙二 醋中較佳爲20至100重量ppm。 本發明之聚一2，6 —萘二甲酸乙二酯，可爲將2，6 一萘二甲酸及乙二醇作爲原料使用者，亦可爲將2，6一 萘二甲酸二甲酯所代表的2，6 —萘二甲酸之酯形成性衍 生物及乙二醇作爲原料使用者。在經由酯交換反應的製造 方法中，如在〇.〇5MPa以上〇.2〇Mpa以下之加壓下實施 -12- (10) (10)200426934 酯父換反應，即可再降減金屬化合物之添加量。 另外，本發明中所使用的聚酯，可於熔融聚合後加以 碎片化，於加熱減壓下或氮氣等的惰性氣流中進行固相聚 合。爲降減薄膜之萃取低聚合物起見，在本發明中固相聚 合亦很適用。 在此，以聚一 2，6—萘二甲酸乙二酯爲主成物所製得 的聚合物之特性黏度較佳爲〇.40dl/g以上0.90dl/g以下。 又’特性黏度係將鄰氯酚作爲溶劑使用，而在25 °C下所 測定的値（單位：dl/g)。 <添加劑> 本發明之半導體晶圓加工用基材薄膜中，爲對薄膜賦 與滑動性起見，較佳爲按小比例含有不活性粒子。此種不 活性粒子而言，可例舉：如球狀氧化矽、多孔質氧化矽、 碳酸鈣、氧化鋁、二氧化鈦、高嶺黏土、硫酸鋇、沸石等 的無機粒子、或者如矽酮樹脂粒子、交聯苯乙烯粒子的有 機粒子。因無機粒子之粒徑爲均勻等的理由，合成品較天 然品者爲佳。無機粒子之結晶形態、硬度、比重、顏色方 面並不特別限定，可視目的而使用。 具體的無機粒子而言，可例舉：碳酸鈣、多孔質氧化 矽、球狀氧化矽、高嶺土、滑石、碳酸鎂、碳酸鋇、硫酸 鈣、硫酸鋇、磷酸鋰、磷酸鈣、磷酸鎂、氧化鋁、氧化矽 、氧化鈦、氧化銷、氟化鋰等。 此中，特佳爲碳酸鈣粒子、球狀氧化矽粒子、多孔質 -13- (11) 200426934 氧化矽粒子、板狀矽酸鋁。 有機粒子而言，可例舉：有機鹽粒子或交聯高 子。此種有機鹽粒子而言，可例舉：乙酸鈣或鈣、 、錳、鎂等之對苯二甲酸鹽。又，交聯高分子粒子 可例舉：二乙烯基苯、苯乙烯、丙嫌酸或甲基丙烯 烯系單體之單獨體或共聚合物。再者，聚四氟乙烯 樹脂、苯并鳥糞胺樹脂、熱固化環氧樹脂、不飽和 脂、熱固化性脲樹脂、熱固化性苯酚樹脂等的有機 很適用。交聯高分子粒子中，特佳爲矽酮樹脂粒子 聚苯乙烯粒子。 再者，薄膜中所添加的不活性粒子之粒徑，對 子之平均粒徑，較佳爲〇.〇5//m以上5#m以下， 0.08//m以上3.5//m以下，特佳爲0.10//m以上3 下。又，薄膜中所含不活性粒子之全添加量較佳f 重量％以上，3重量％以下，更佳爲0.08重量％以上 量％以下，特佳爲0.1重量％以上1.0重量％以下。 添加於薄膜中的不活性粒子可爲選自上述所例 中的單一成分，亦可爲含有二成分或三成分以上的 。又，單一成分的情形，可含有平均粒徑不相同的 上之粒子。 在此，不活性粒子之平均粒徑，係使用（股） 作所製之商品名「CP - 50型離心粒徑分中J Centrifugal Particle Size Analyzer」測定，將從該 得遠心沈降曲線作爲依據所算出的各粒徑與具存在 分子粒 鋇、鋅 而言， 酸之乙 、石夕酮 聚酯樹 粒子亦 、交聯 各種粒 更佳爲 // m以 I 0.05 2.0重 示者之 多成分 2種以 島津製 〒器（ 測定所 量的積 -14- (12) (12)200426934 算曲線，讀取相當於5 0重量％的粒徑的値（參考「粒子 測定技術」日刊工業新聞社發行，1 975年版第242至247 頁）。 本發明之薄膜中，特佳爲將平均粒徑在0·3^πι以上 0.8 // m以下的碳酸鈣粒子按0.05重量％以上〇·4重量％以 下，及/或平均粒徑在0.1 // m以上0.6 // m以下的球狀氧 化矽粒子按0.03重量％以上0.5重量％以下，及/或平均粒 徑在〇·1 μ m以上0.6 // m以下的矽酮粒子按〇·〇3重量％以 上0.4重量％以下之比例含有。再者，可同時含有同種之 不活性粒子而粒徑不相同的粒子，在此情形，只要是同 樣之不活性粒子全體之含量係在上述範圍內即可。 本發明之薄膜中，可視其用途而調配結晶核劑，氧化 防止劑、熱安定化劑、易滑劑、難燃劑、帶電防止劑、聚 矽氧烷等。 不活性粒子或其他添加劑之添加時期，只要是在製膜 聚一 2，6 —萘二甲酸乙二酯止的階段則並無特別限制，例 如，可在聚合階段中添加，亦可在製膜時添加。從均勻分 散之觀點來看，較佳爲將不活性粒子或其他添加劑添加於 乙二醇中並在聚合時按高濃度方式添加而作成主碎片（ master chip )，且將所得主碎片以無添加碎片稀釋。 <基材薄膜> 本發明之半導體晶圓加工用基材薄膜，係以聚一 2，6 一萘二甲酸乙二酯爲主成分所製得的雙軸拉伸定向薄膜。 •15- (13) (13)200426934 本發明之基材薄膜（以下有時簡稱薄膜），可爲單層或2 層以上之複數層之任一種，而由2層以上之複數層而成者 在能使與半導體間的密著面之平坦性及基材薄膜之捲取性 兩立方面較合適。構成2層以上之複數層的手段而言，可 採用共擠出法、擠出層合法、塗層法等而並不特別限定， 惟從生產性之觀點來看，較佳爲使用上述的聚- 2，6 -萘 二甲酸乙二酯並採用從複數台之擠出機擠出各種樹脂的共 擠出法以構成複數層。 又，本發明之半導體晶圓加工用基材薄膜，較佳爲背 面磨削帶用或切割帶用者。 <熱收縮率> 本發明之薄膜，在200 °C下加熱處理10分鐘時的熱 收縮率，往薄膜之製膜方向及寬幅方向均爲1.00 %以下。 本發明之薄膜之熱收縮率更佳爲- 0.20%以上0.80%以上 ，特佳爲一 0 · 1 0 %以上 〇 . 6 0 %以下。本發明中，除非特別 註明，製膜方向係指薄膜連續製膜時之進行方向，有時稱 呼爲薄膜之長度方向、縱方向、連續製膜方向或者MD( machine direction)。又，本發明中，寬幅方向係指在薄 膜面內方向與製膜方向垂直相交的方向，有時稱呼爲橫方 向或 TD ( transverse direction )。 如在2 0 0 °C之溫度下加熱處理1 〇分鐘時之熱收縮率 超過1.00%時’則在半導體晶圓加工過程中的溫度成爲高 溫時，由於基材薄膜之尺寸收縮會增大而一方面晶圓會熱 -16 - (14) 200426934 膨脹之故，在加工過程之半途中晶圓從帶之黏 有時因晶圓之厚度薄而破損。如熱收縮率在-時，亦即熱膨脹時基材薄膜之熱膨脹會較晶圓 大，結果帶之黏著劑會從晶圓之周邊部繞回至 再者，如薄膜之收縮或膨脹大到超過本發明之 於任何情形均因與晶圓之膨脹率間的差，而帶 半導體會反撬之故不宜。又，如薄膜之膨脹率 圓之膨脹率爲大時，則由於將晶圓側作爲內側 成爲晶片互相競擠之原因之故，需要儘力防止 ，亦即熱收縮率成爲負的方向。 另外，爲製得具有所期望之熱收縮率的薄 薄膜之製造中實施雙軸拉伸並熱固定後，較佳 弛緩處理。 <萃取低聚合物量> 本發明之薄膜之低聚物萃取量，在使用 24小時的條件下，較佳爲〇.8重量％以下，更 量％以下，特佳爲0.5重量％以下。如低聚合 過0.8重量％時，則在作爲半導體晶圓加工用 用時’在過程內之加工溫度環境下或黏著劑層 低聚合物會在基材薄膜表面析出，而可能引起 之污染或黏著劑層與基材薄膜間之黏接強度之 。如欲防止低聚合物在薄膜表面的析出時，最 係設法降減薄膜中所含的低聚合物，而爲本發 著劑脫落， • 0.2 0 %以下 之熱膨脹爲 晶圓表面。 範圍時，由 上所載置的 較半導體晶 而反撬，而 薄膜之膨脹 膜起見，在 爲再實施熱 氯仿以萃取 佳爲0.6重 物萃取量超 基材薄膜使 塗設過程中 加工過程內 低落等問題 有效的方法 明之用途時 -17- (15) (15)200426934 ，較佳爲減少低聚合物萃取量。 在此’爲減少低聚合物萃取量並作成爲所期望之範圍 時’較佳爲將聚一 2 ’ 6〜萘二甲酸乙二酯之特性黏度作成 0.4 5(11/§以上〇.90(11~以下，更佳爲〇.48至〇85(11/§，特 佳爲0.50至0.80dl/g。如聚—2，6一萘二甲酸乙二酯之特 性黏度不到達下限時’則薄膜之萃取低聚合物量會過多， 而另一方面如超過上限時，則在聚合及製膜過程中可能需 要多餘的負荷。 又’如欲得低聚合物萃取量作成所期望的範圍時，薄 膜之特性黏度較佳爲0.40至〇·90dl/g。在此，特性黏度係 將鄰氯酣作爲溶劑使用，而在2 5 °C下所測定的値（單位 ：dl/g)。 <厚度方向之折射率> 本發明之薄膜厚度方向之折射率（nz)，較佳爲 1 · 5 0 1以上1 · 5 1 5以下。更佳爲1 · 5 0 3以上1 · 5 1 3以下，而 特佳爲1.504以上1.512以下。如厚度方向之折射率在 1.50以下時，則由於薄膜之抗脫層性（antidelamination )會惡化之故，將在薄膜之切斷端面產生毛邊，而有時切 屑會污染過程內之作業。又，如厚度方向之折射率超過 1 .5 1 5時，則薄膜變脆，結果在作爲背面磨削帶或切割帶 之基材薄膜使用時之帶剝離之際，可能會發生薄膜破裂。 另外，如欲在薄膜之厚度方向製得具有所期待的折射 率的薄膜，則藉由基材製造時之熱固定溫度之提升、或者 -18- (16) (16)200426934 降低縱方向或橫方向之拉伸倍率即可達成。 <薄膜之厚度之分佈差> 本發明之薄膜厚度之分佈差，較佳爲對薄膜之平均厚 度爲15%以下，更佳爲10%以下，特佳爲8%以下。由於 如薄膜厚度之分佈差愈小時，則背面磨削帶與半導體晶圓 以及切割帶與半導體晶圓的黏接面之黏接強度會均勻化， 而能達成安定的帶黏接（taping )之故，能達成更精密的 背面磨削及切割，結果可供給很適合高精密化、高密度化 的晶片。 <楊氏撓曲模量（Young’s modulas) > 本發明之薄膜之楊氏撓曲模量，較佳爲薄膜之製膜方 向及寬幅方向均在5400MPa以上6900MPa以下，更佳爲 5500MPa以上 6 8 0 0 Μ P a以下，特佳爲 5 6 0 0 Μ P a以上 6700MPa以下。又，兩方向之楊氏撓曲模量之差，較佳爲 1 OOOMPa 以下 ° 如楊氏撓曲模量在5400MPa以下時，則薄膜之剛性 會不足，結果利用聚一 2，6—萘二甲酸乙二酯薄膜之高彈 性係數的半導體晶圓加工用基材薄膜之薄膜化可能有困難 。又，如楊氏撓曲模量超過6900MPa時，則在裁切薄膜 時容易產生多量切屑，而有污染潔淨狀態下的加工的可能 性。再者，由於所切割的各晶片之撿取時從帶之擴張或從 帶側的晶片之頂上發生困難，結果生產效率會降低。 -19- (17) (17)200426934 <表面粗糙度（Ra) > 本發明薄膜之至少1個面的中心線平均表面粗縫度（ Ra)，較佳爲3nm以上80nm以下，更佳爲5nm以上 60nm以下，特佳爲7nm以上50nm以下。再者，如薄膜 爲2層以上之複數層構成時。薄膜兩面之Ra之和較佳爲 1 〇nm以上，更佳爲14nm以上。在此，中心線平均粗縫 度（R a )係遵照JI S B — 0 6 0 1所規定的方法，卸開線（ cut-off)爲0.25mm，測定觸計則採用半徑3 // m者並使用 表面粗糙度計（（股）小坂硏究所製，商品名「沙佛科達 SE — 3 0C」或（股）東京精密製，商品名「沙佛科姆SE — 3CK」）測定。 如Ra爲3 nm以下時，則薄膜之滑動性不佳，薄膜製 造時之搬運、或薄膜之捲取時容易在薄膜表面發生擦傷， 或將薄膜捲取爲輥筒狀態時被捲入薄膜與薄膜間的空氣不 易逸出’而可能被所產生的空氣滯留團而損傷薄膜之平面 性。另一方面，如Ra超過80nm時，則由於薄膜之滑動 性過佳’以致在薄膜之捲取、或於薄膜表面塗設黏著層並 作成帶後之捲取時，有頻繁發生捲取錯位的可能性。 <薄膜密度> 本發明之薄膜密度，較佳爲 UWg/cm3以上， l’：)64g/cm 以下。更佳爲 i.357g/cm3 以上，1.362g/cm3 以 下。如密度爲1.3 5 6g/cm3以下時，則薄膜之結晶性低而 -20- (18) (18)200426934 可能在半導體晶圓加工過程中的尺寸安定性會不足夠。又 ，如密度超過1.364g/cm3時，則由於結晶性過高而喪失 薄膜之韌性之故，結果在作成背面磨削帶或切割帶之基材 時之帶剝離時容易破裂。在此，薄膜之密度係在使用硝酸 鈣水溶液爲溶劑的密度梯度管（density-gradient tube)中 ，在25°C依浮沈法所測定的値。 <薄膜之平均厚度> 本發明之薄膜之平均厚度較佳爲9//m以上150//m 以下，更佳爲9//m以上125#m以下，特佳爲12//m以 上100//m以下。如薄膜之平均厚度爲9//m以下時，則 在晶圓加工時作爲支持體的機械性強度或晶圓表面之保護 功能會不足夠。另一方面，如薄膜之平均厚度超過150 // m時，則薄膜之剛性將極爲過強，且如過帶之黏著強度 稍高時，則有帶剝離時晶圓破損、或切割後爲使薄膜擴張 的力量過大的可能性。 <動磨擦係數> 本發明之薄膜之薄膜互相間的動摩擦係數d )， 較佳爲0 · 5以下。如動摩擦係數d )超過〇 · 5時，則 製膜過程中及黏著劑層塗佈加工中的操作處理性不佳，例 如在過程內之輥筒上的行走中或捲取爲輥筒狀時會發生皺 紋或刮傷等缺點。 -21 - (19) (19)200426934 <熱收縮率之差> 將本發明之薄膜在20(TC下熱處理10分鐘時的薄膜 之熱收縮處理1 〇分鐘時之薄膜之熱收縮率，較佳爲薄膜 之製膜方向之熱收縮率（SMD )與寬幅方向之熱收縮率（ STD )的差之絕對値（|SMD - STD| )在0.60%以下。該値 ,更佳爲0.5%以下，特佳爲0.40%以下。如熱收縮率的差之 絕對値超過0.60%，則作爲背面磨削帶或切割帶之基材薄 膜使用時薄膜之尺寸變化量之各向異性大而可能發生半導 體晶圓之反撬。 <背面磨削帶> 本發明之背面磨削帶係於上述之背面磨削帶用基材薄 膜之1個面上具有黏著劑層。在本身爲半導體晶圓背面之 硏磨迥程的背面磨削過程中，將於背面磨削帶用基材薄膜 之1個面上層含有黏著劑的背面磨削帶用爲矽晶圓之固定 用，即能按安定的狀態固定砂晶圓。 <切割帶> 本發明之切割帶係於上述之切割帶用基材薄膜之1個 面上具有黏著劑層。於本身爲從半導體晶圓切割1C晶片 的過程的切割過程中，將於切割用基材薄膜之1個面上層 合有黏著劑層的切割帶用爲矽晶圓之固定用，即能按安定 的狀態固定矽晶圓。 •22· (20) 200426934 <塗佈層> 本發明之背面磨削帶用或切割帶用基材薄膜上 善與黏著劑間的易黏接性之目的，可於其至少1個 置塗佈層。塗佈層較佳爲選自聚酯樹脂、胺基甲酸 脂、丙烯酸酯樹脂、乙烯系樹脂的至少1個之水溶 分散性高分子樹脂所成，特佳爲含有聚酯樹脂及丙 樹脂之丙兩者。本發明所用的塗佈層之聚酯樹脂之 溫度（Tg)爲0至100°C，更佳爲10至90°c者。 樹脂，較佳爲水中可溶性或分散性之聚酯，惟尙可 干有機溶劑。 此種聚酯樹脂而言，係從如下述的多元酸或其 衍生物與多元醇或其酯形成衍生物所成。亦即，多 分而言，可例舉：對苯二甲酸、間苯二甲酸、鄰苯 酐、2，6—萘二甲酸、1，4一環己烷二甲酸、己二 二酸、偏苯三甲酸、均苯四甲酸、二聚物酸（ acid ) 、5 -鈉磺基間苯二甲酸等。使用此等酸成 種以上以合成共聚合聚酯樹脂。又，雖然若干量， 用如不飽和多元酸成分之馬來酸、衣康酸等及對羥 酸等的羥基羧酸。又，多元醇而言，可例舉：乙二 ，4 一 丁二醇、二乙二醇、二丙二醇、1，6一乙二酉 4 一環己烷二甲醇、伸茬二醇、二羥甲基丙烷、聚 乙烷）二醇、聚（環氧戊烷）二醇、雙酚A、雙酚 氧乙烷或環氧丙烷加成物等，惟並不限定於此等。 本發明所用的塗佈層之丙烯酸酯樹脂之玻璃化 ，爲改 面上設 乙酯樹 性或水 烯酸酯 玻璃化 該聚酯 含有若 酯形成 元酸成 二甲酸 酸、癸 dimeric 分之2 亦可使 基苯甲 :醇、1 I ' 1， (環氧 A之環 溫度（ -23- (21) (21)200426934200426934 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to semiconductor wafer processing using a biaxially oriented film made of poly (2,6-naphthalene dicarboxylate) as a main component. Use a substrate film. In detail, it is related to the substrate or dicing tape used as a back grind tape in semiconductor wafer processing, especially in the process of backgrind or dicing. When the substrate is used, it has a substrate film for back grinding tape or dicing tape which has excellent dimensional stability, smoothness, and mechanical strength. [Prior art] During the honing process of the backside of a wafer in semiconductor manufacturing (backside grinding process) and the process of cutting a 1C (Integrated Circuit) chip from a completed wafer (cutting process), layers Adhesive tapes with various adhesives will be used for wafer fixing. Wafers with circuits formed on the surface during the back grinding process are honed on the back in a state of being fixed to an adhesive tape. After UV (ultraviolet) irradiation or heating reduces the adhesion of the adhesive, Transfer to the next cutting process. During the dicing process, the wafer fixed by the adhesive tape is cut into individual 1C wafer units, and the same as in the back grinding process, after reducing the adhesive force of the adhesive by UV irradiation or heating, one by one is taken out. . The removed IC chip is transferred to the next bonding process and molding process -4- (2) 200426934 Furthermore, as the substrate of the adhesive film and release film of the dicing tape, polyolefin is used. And its polymers, polyvinyl chloride and its polymer esters, polycarbonate, polyamide, polyimide, and other plastic films, but due to mechanical strength, dimensional stability, heat resistance, price, etc. As disclosed in Japanese Patent Laid-Open No. 5-1 75 3 32 and Japanese Patent Laid-Open No. 1-, the use of polyester films has begun. On the other hand, in order to prevent the decrease in the yield of silicon crystals due to the impurities contained in the polyester film and the release layer of the silicone resin, the use of germanium compound for polymerization catalysts is disclosed in Japanese Patent Laid-Open No. 10-2 1 4 8 0 1). Also, from the viewpoint of such a low pollution property, Japanese Patent Laid-Open No. 11-20105 has disclosed a technique for using a release film for an adhesive layer on the storage of a back grinding tape or a dicing tape. However, with the recent increase in the accumulation of semiconductors, new semiconductor wafer processing technologies have been developed to reduce the thickness of semiconductor wafers, which are rapidly advancing. In particular, since wafer thicknesses are often thin, there are problems such as breakage of wafers or time consuming in honing in the honing method. Therefore, for example, plasma is used as a processing technology. (Plasma) A method for performing etching and the like. However, in the newly developed processing method, since the processing temperature is higher than that of the processing method, the use of the polyester film as the base material for the conductor wafer processing film still has its thermal dimensional stability or mechanical strength. Subject. Also, in the dicing process, generally after performing tape peeling and weakening the adhesive force of the adhesive by heating or UV irradiation, a square film that performs an expansion of the tape for each wafer is picked up. 5 8 3 8 Round-shaped objects (Half-typed from the public protection line with the same number to semi-mechanical properties developed by non-comers, the picking method or -5-(3) (3) 200426934 adopts the chip from the top of the belt side The method is to pry open the gap between the wafers, but when the shrinkage of the belt size during heating is large, the picking failure of the wafer may occur, and there is a problem that the production efficiency of the semiconductor wafer is deteriorated. When using polyimide as a base film, higher dimensional stability is required due to high water absorption. Furthermore, in order to improve the productivity of semiconductor wafers, it is necessary to always pursue cleanliness in the process (c 1 ean) to improve the processability. (Patent Document 1) Japanese Patent Laid-Open No. 5 — 1 7 5 3 3 2 (Patent Document 2) Japanese Patent Laid-Open No. 1 — 5 8 3 8 (Patent Document 3) Japanese Patent Laid-Open No. 10-214801 (Patent Document 4) Japanese Patent Laid-Open No. 1 1-2 0 1 0 5 [Summary of the Invention] [Disclosure of the Invention] The object of the present invention is to solve the problems of the prior art as described above, so as to obtain a semiconductor crystal Circular processing, especially when used as a substrate for back grinding tapes or substrates for cutting tapes, has excellent dimensional stability, smoothness, mechanical strength, and excellent processing adaptability at high temperatures and high humidity. Substrate film for semiconductor processing. Other objects and advantages of the present invention can be understood from the following description. If the present invention is used, the above-mentioned objects and advantages of the present invention can be obtained by the first • first type of substrate film for semiconductor wafer processing It is a biaxially oriented film made from polyethylene-2,6-carboxylate as the main component, which is characterized by the thermal shrinkage of the film when heat-treated at 200 ° C for 10 minutes. -6-(4) (4) 200426934 The film formation direction and width direction of the thin film are both i · 00% or less, which is achieved. Also, if the present invention is adopted, the above-mentioned objects and advantages of the present invention can also be obtained by Step 2: As mentioned above The thinner substrate for semiconductor wafer processing of item No. 1 is described in “The substrate film for semiconductor wafer processing is achieved by using a back grinding tape or a dicing tape. Furthermore, if the present invention is adopted, the present invention The above purpose and advantages can also be obtained from the third aspect: the substrate film for semiconductor wafer processing according to the above-mentioned item 丨 of the present invention, wherein the amount of the extracted low polymer of the thin film is 0.8% by weight or less, The refractive index in the thickness direction of the film is ≧ 1.50 and more than 1.5 1 5. If the present invention is adopted, the above-mentioned object and advantages of the present invention can be obtained by the fourth aspect: a back-grinding belt attached to The first or second aspect of the substrate film for a back-grinding tape of the present invention has an adhesive layer on one side thereof, or a type of dicing tape is attached to the substrate for a dicing tape of the first or second aspect of the present invention. One side of the material film is provided with an adhesive layer, at least any one of which is achieved. Furthermore, if the present invention is adopted, the above-mentioned objects and advantages of the present invention can be obtained by the fifth: a kind of back grinding tape compound, which is provided on the adhesive layer of the back grinding tape of the fourth invention of the present invention A release film, or a dicing tape composite, is achieved by having at least any one of a release film on top of the adhesive layer of the dicing tape of the fourth invention of the present invention. [Effects of the Invention] The substrate film for semiconductor wafer processing of the present invention is excellent in dimensional stability, smoothness, and mechanical strength under local temperature and high humidity. -7- (5) (5) 200426934 . In particular, it is useful as a dicing tape or a back-grinding tape for semiconductor wafer processing. [The best form for carrying out the invention] < Poly-2,6-cae- ^ ethyl formate > In the present invention, the substrate film for semiconductor wafer processing is made of poly-2,6-naphthalene dicarboxylate. The diester (hereinafter referred to as PEN) is the main component, and may be a copolymer or a mixture. The main dicarboxylic acid component of the poly-2,6-naphthalenedicarboxylic acid ethylene glycol is naphthalenedicarboxylic acid, and the main diol component is ethylene glycol. Here, naphthalenedicarboxylic acid may be exemplified by 2,6-naphthalenedicarboxylic acid, 2,7-naphthalenedicarboxylic acid, 1,5-naphthalenedicarboxylic acid, etc., and among these, 2,6-naphthalenedicarboxylic acid is preferred. Dicarboxylic acid. In addition, it mainly means that at least 80 mol% of the total repeating units in the polymer constituent of the polymer of the film of the present invention is 2,6-naphthalenedicarboxylic acid diethyl ester, more preferably 90 mol% or more 'Specially good is 95 mol% or more. That is, as long as the poly (2,6-naphthalene dicarboxylate) film of the present invention does not cause extreme loss, the dimensional stability and mechanical strength under high temperature use can be ensured. In the case of a copolymer, a compound having two ester-forming functional groups in the molecule can be used as a copolymerization component of a copolymer other than diethyl 2,6-naphthalene dicarboxylate which constitutes the main component. Examples of such compounds include: oxalic acid, adipic acid, phthalic acid, sebacic acid, dodecanedicarboxylic acid, isophthalic acid, terephthalic acid, 1,4-cyclohexane Alkanedicarboxylic acid, 4,4'-diphenyldicarboxylic acid, phenylazepinedicarboxylic acid, 2,7-naphthalenedicarboxylic acid, tetrahydronaphthalenedicarboxylic acid, decahydronaphthalenedicarboxylic acid, diphenyl Dicarboxylic acid-8- (6) (6) 200426934 Dicarboxylic acids such as acids are very useful. Also, hydroxycarboxylic acids such as p-hydroxybenzoic acid and p-hydroxyethoxybenzoic acid are also useful. Furthermore, such as propylene glycol, trimethyl glycol, tetramethyl glycol, hexamethyl glycol, cyclohexane methyl glycol, neopentyl glycol, ethylene oxide adducts of bisphenol, ethylene oxide of bisphenol A Dihydric alcohols such as alkane adducts, diethylene glycol, and polyethylene oxide glycol are also very useful. These compounds may be used alone or in combination of two. Among these compounds, the acid component is preferably isophthalic acid, terephthalic acid, 4,4f-diphenyldicarboxylic acid, 2,7-naphthalenedicarboxylic acid, and p-hydroxycarboxylic acid. The diol component is preferably an ethylene oxide adduct of trimethylene glycol, hexamethylene glycol, neopentyl glycol, and bisphenol. In addition, the polyethylene-2,6-naphthalene dicarboxylate used in the present invention may be a monofunctional compound such as benzoic acid, methoxypolyalkanediol, etc., and may be a part of the terminal hydroxyl group and / or carboxyl group. Or all of them. In addition, the poly (2,6-naphthalene dicarboxylate) used in the present invention may be a substantially linear tri- or higher-functional ester-forming compound, such as glycerol, isoprene, or the like, in a substantially linear form. Copolymers are added within the polymer range. In addition, the film of the present invention may be a mixture of other organic polymers in addition to polyethylene-2,6-naphthalene dicarboxylate as a main component. Examples of such organic polymers include polyethylene terephthalate, polyethylene isophthalate, polytrimethylene terephthalate, and poly-4,4'-tetramethylene diphthalate. Ethylene glycol, Poly-2,7-ethylene terephthalate, Poly-2,6-trimethylene diacetate, Poly-2,6-naphthalenedicarboxylic acid neopentyl ester, Poly-2,6- Naphthalenedicarboxylic acid (bis (4-ethoxyphenyl) sulfonate, etc .. Among these, polyethylene isophthalate and polytrimethylene terephthalate-9- (7) (7) 200426934 are preferred. In short, poly-2,6-naphthalenedicarboxylic acid trimethyl diester, poly-2,6-naphthalenedicarboxylic acid (bis (4-ethenyloxyphenyl) masterbatch ester. Organic polymers mixed with these PEN can not only 1 type, or more than 2 types can be used. The proportion of the organic polymer mixed with PEN is based on the repeating unit of the polymer, up to 20 mol%, preferably less than 10 mol%. Particularly preferred is 5 Molar% or less. The production of such a mixture can be carried out according to a generally known method for producing a polyester composition. The polyester used in the present invention can be obtained by a method known in the future. For example, a method of directly preparing a low-polymerization polyester by reacting a carboxylic acid with ethylene glycol, or a low-paper alkyl ester of a dicarboxylic acid and ethylene glycol using a well-known transesterification catalyst for transesterification. After the reaction method, the polymerization reaction may be performed in the presence of a polymerization catalyst. For the transesterification reaction catalyst, examples include sodium, potassium, magnesium, calcium, zinc, hafnium, titanium, chromium, manganese, and cobalt. These compounds can be used singly or in combination of two or more. For the polymerization catalyst, antimony trioxide, antimony tetraoxide, antimony pentoxide, antimony trichloride, and antimony tribromide can be exemplified. , Antimony compounds such as antimony glycolate, antimony acetate, etc., germanium compounds represented by germanium dioxide, tetraethyl titanate, tetrapropyl phthalate, tetraphenyl titanate or these partially hydrolysed decomposition products, ethylene dioxide Titanium compounds such as ammonium oxotitanate, potassium titanyl oxalate, titanium acetamidine acetonate, etc. Among the above polymerization catalysts, germanium compounds are particularly useful. It is preferred to use such germanium compounds as polycondensation reaction catalysts. For example, before the esterification reaction or from the completion of the transesterification reaction to the polymerization reaction After the start, it is added to the prepared transesterification reactant and heated under reduced pressure to carry out the heavy condensation reaction. The germanium (Ge) compound used in the repolymerization catalyst in the present invention is -10- (8) (8) 200426934 'For example, (spoon) amorphous germanium oxide, (female) fine crystalline germanium oxide, (gate) germanium oxide, a solution dissolved in water, etc. are very useful. Among these germanium oxides, Germanium compounds such as crystalline germanium dioxide, amorphous germanium dioxide, tetraethoxygermanium, and tetra-n-butoxygermanium are very useful, especially crystalline germanium dioxide, amorphous germanium dioxide, and amorphous two. Germanium oxide is very useful. Because the amount of germanium compound used in the repolymerization catalyst is too small, sufficient polymerization reaction promotion effect cannot be obtained, and if it is too large, the softening point of the polyester may be reduced. Therefore, the metal of germanium remaining in the polyester is preferably 10 to 1,000 weight ppm, more preferably 10 to 500 weight ppm, and particularly preferably 10 to 200 weight ppm. Here, the concentration of the metal-containing element in germanium was set on a scanning electron microscope (SEM, manufactured by Hitachi Measurement Equipment Services, Ltd., trade name "S570"), and the connected energy was used. Dispersive X-ray microanalyzer (XMA, manufactured by Horiba, Ltd., trade name "EMAX-7000") A unit that performs quantitative analysis. When the polymerization is carried out by a transesterification reaction, it is preferable to contain a phosphorus compound for the purpose of deactivating the transesterification catalyst before the polymerization reaction. Examples of such phosphorus compounds include phosphoric acid, phosphorous acid, phosphonic acid, phosphonate compounds, and derivatives thereof. These compounds can be used alone or in combination of two or more. Among these, the phosphorus compound is preferably a phosphonate compound represented by the following formula (I). R] 〇— C (〇) — X-P (Ο)-(OR2) 2 ......... (1) Here, R1 and R2 in the formula are alkane having 1 to 4 carbon atoms Group, X is —CH2— or monoCH (Y)-(Y represents phenyl.) And R] and R2 -11-(9) (9) 200426934 may be different from each other. Particularly preferred phosphorus compounds are methoxycarbonylmethylphosphonic acid, ethoxycarbonylmethylphosphonic acid, propoxycarbonylmethylphosphonic acid, butoxycarbonylmethylphosphonic acid, methoxycarbonyldioxyphosphophenylphenylacetic acid, ethoxycarbonyldi Dimethyl, diethyl, dipropyl, and dibutyl esters of oxyphosphonophenylacetic acid, propoxycarbonyldioxyphosphophenylphenylacetate, and butoxycarbonyldioxyphosphophenylphenylacetate. In the present invention, the preferred reason for these phosphonate compounds is that the reaction between the phosphorus compound and the metal compound is relatively slow because the phosphorus compound is generally used as a stabilizer. The duration of the catalyst activity is long, and as a result, the amount of the catalyst added in the polyester can be reduced, and even if an excessive amount of the stabilizer is added to the catalyst, it is still difficult to affect the thermal stability of the ester. The addition period of these phosphorus compounds may be any period as long as the transesterification reaction is substantially completed. For example, the polycondensation reaction may be performed at a reduced pressure after the start of the polycondensation reaction under the atmospheric pressure before the start of the polycondensation reaction. Add the polymer after the final stage or after the completion of the polycondensation reaction. A suitable content of the phosphorus compound is from 20 to 100 ppm by weight in polyethylene-2,6-naphthalenedicarboxylate as the phosphorus element in the phosphorus compound from the viewpoint of the thermal stability of the polyester. The polyethylene-2,6-naphthalene dicarboxylate of the present invention can be used by users who use 2,6-naphthalene dicarboxylic acid and ethylene glycol as raw materials, and can also be used by dimethyl 2,6-naphthalene dicarboxylate. Representative users of 2,6-naphthalenedicarboxylic acid ester-forming derivatives and ethylene glycol. In the production method through the transesterification reaction, if the -12- (10) (10) 200426934 transesterification reaction is carried out under a pressure of 0.05 MPa or more and 0.2 MPa or less, the metal compound can be reduced again. Its added amount. The polyester used in the present invention can be fragmented after melt polymerization, and solid-phase polymerization can be carried out under heating and reduced pressure or in an inert gas stream such as nitrogen. For the purpose of reducing the extraction of low-molecular-weight polymers of thin films, solid-phase polymerization is also very suitable in the present invention. Here, the intrinsic viscosity of a polymer prepared by using poly (ethylene-2,6-naphthalene dicarboxylate) as a main product is preferably from 0.40 dl / g to 0.90 dl / g. In addition, the intrinsic viscosity is a rhenium (unit: dl / g) measured at 25 ° C using o-chlorophenol as a solvent. < Additives > The base film for semiconductor wafer processing of the present invention preferably contains inactive particles in a small proportion in order to impart sliding properties to the film. Examples of such inactive particles include: inorganic particles such as spherical silica, porous silica, calcium carbonate, aluminum oxide, titanium dioxide, kaolin clay, barium sulfate, zeolite, or silicone resin particles, Organic particles of crosslinked styrene particles. For reasons such as the uniform particle size of inorganic particles, synthetic products are preferred over natural products. The crystal form, hardness, specific gravity, and color of the inorganic particles are not particularly limited, and may be used depending on the purpose. Specific inorganic particles include calcium carbonate, porous silica, spherical silica, kaolin, talc, magnesium carbonate, barium carbonate, calcium sulfate, barium sulfate, lithium phosphate, calcium phosphate, magnesium phosphate, and oxidation. Aluminum, silicon oxide, titanium oxide, oxide pins, lithium fluoride, etc. Among these, particularly preferred are calcium carbonate particles, spherical silica particles, porous -13- (11) 200426934 silica particles, and plate-like aluminum silicate. Examples of the organic particles include organic salt particles and crosslinked polymers. Examples of such organic salt particles include calcium acetate or calcium terephthalate, manganese, magnesium, and the like. Examples of the crosslinked polymer particles include individual or copolymers of divinylbenzene, styrene, acrylic acid, or methacrylic monomers. Furthermore, organic materials such as polytetrafluoroethylene resin, benzoguanamine resin, thermosetting epoxy resin, unsaturated resin, thermosetting urea resin, and thermosetting phenol resin are suitable. Among the crosslinked polymer particles, silicone resin particles and polystyrene particles are particularly preferred. In addition, the particle diameter of the inactive particles added to the film, and the average particle diameter of the pair, are preferably from 0.05 // m to 5 # m, from 0.08 // m to 3.5 // m. It is preferably 0.10 // m or more and 3 times. The total amount of inactive particles contained in the film is preferably f% by weight or more and 3% by weight or less, more preferably 0.08% by weight or more, and particularly preferably 0.1% by weight or more and 1.0% by weight or less. The inactive particles added to the film may be a single component selected from the examples described above, or may contain two or more components. In the case of a single component, particles having different average particle diameters may be contained. Here, the average particle size of the inactive particles is measured using the brand name "CP-50 Centrifugal Particle Size Analyzer" manufactured by (Stock) Co., Ltd., and the obtained telecentric sedimentation curve is used as the basis. For each calculated particle size, with the presence of molecular particles of barium and zinc, it is also better to cross-link the various particles of ethyl acid and polyester resin particles of stone ketone. Shimadzu-made urn (measured product -14- (12) (12) 200426934 calculation curve, read radon with a particle size equivalent to 50% by weight (refer to "Particle Measurement Technology" published by Nikkan Kogyo Shimbun , 1 975 edition, pp. 242 to 247). In the film of the present invention, it is particularly preferred that the calcium carbonate particles having an average particle diameter of 0.3 m or more and 0.8 // m or less are 0.05% by weight or more and 0.4% by weight or less. Below, and / or spherical silica particles having an average particle size of 0.1 // m to 0.6 // m or less are 0.03 wt% or more and 0.5 wt% or less, and / or the average particle size is 0.1 μm or more 0.6 / / m or less of the silicone particles are contained in a proportion of 0.03% by weight to 0.4% by weight. In addition, the same kind of inactive particles may be contained at the same time, and the particles having different particle diameters may be contained at the same time. In this case, the content of the same inactive particles as a whole may be within the above range. In the film of the present invention, it can be seen It can be used as a crystallization nucleating agent, oxidation inhibitor, thermal stabilizer, slip agent, flame retardant, antistatic agent, polysiloxane, etc. As long as the inactive particles or other additives are added, it is necessary to form the polymer during film formation. There is no particular limitation on the stage up to ethylene 2,6-naphthalene dicarboxylate. For example, it can be added in the polymerization stage or during film formation. From the viewpoint of uniform dispersion, it is preferred that Active particles or other additives are added to ethylene glycol and added at a high concentration during polymerization to make a master chip, and the obtained master chip is diluted with no added chips. ≪ Substrate film > The base film for semiconductor wafer processing is a biaxially oriented film made of polyethylene-2,6-naphthalene dicarboxylate as the main component. • 15- (13) (13) 200426934 Substrate film It may be referred to as a thin film hereinafter), which may be a single layer or a plurality of layers, and a layer made of a plurality of layers may make the flatness of the adhesion surface between the semiconductor and the substrate film. The winding property is more suitable for the two aspects. As for the means for forming multiple layers of two or more layers, the co-extrusion method, the extrusion layer method, and the coating method can be used without particular limitation, but from the viewpoint of productivity From the viewpoint, it is preferable to use a co-extrusion method using the above-mentioned polyethylene-2,6-naphthalene dicarboxylate and extruding various resins from a plurality of extruders to form a plurality of layers. The substrate film for semiconductor wafer processing of the present invention is preferably used for a back surface grinding tape or a dicing tape. < Thermal shrinkage rate > The thermal shrinkage rate of the film of the present invention when heat-treated at 200 ° C for 10 minutes is 1.00% or less in the film-forming direction and width direction of the film. The thermal shrinkage of the film of the present invention is more preferably -0.20% or more and 0.80% or more, and particularly preferably -0.10% or more and 0.60% or less. In the present invention, unless otherwise specified, the film forming direction refers to the direction in which the thin film is continuously formed, and is sometimes referred to as the length direction, vertical direction, continuous film forming direction, or MD (machine direction) of the film. In the present invention, the broad direction refers to a direction that intersects the film-forming direction perpendicularly within the film surface, and is sometimes referred to as a transverse direction or a TD (transverse direction). If the thermal shrinkage exceeds 1.00% when heat-treated at a temperature of 200 ° C for 10 minutes, then when the temperature during semiconductor wafer processing becomes high, the size shrinkage of the substrate film will increase. On the one hand, the wafer will expand -16-(14) 200426934. In the middle of the process, the adhesion of the wafer from the tape is sometimes damaged due to the thin thickness of the wafer. If the thermal shrinkage is at-, that is, the thermal expansion of the substrate film will be greater than that of the wafer during thermal expansion. As a result, the adhesive tape will be wound back from the peripheral portion of the wafer to another, such as the shrinkage or expansion of the film is too large. In any case, the present invention is not suitable due to the difference between the expansion rate of the wafer and the back semiconductor. In addition, if the expansion rate of the film is large, the wafer side as the inside causes the wafers to compete with each other. Therefore, every effort must be made to prevent the thermal contraction rate from becoming negative. In addition, in order to obtain a thin film having a desired heat shrinkage ratio, a relaxation treatment is preferably performed after performing biaxial stretching and heat fixing. < Amount of extraction low polymer > The amount of oligomer extraction of the film of the present invention is preferably 0.8% by weight or less, more preferably not more than 0.5% by weight, and particularly preferably 0.5% by weight or less under the conditions of 24 hours of use. If the oligomerization rate is over 0.8% by weight, when used as a semiconductor wafer, the polymer will be deposited on the surface of the substrate film under the processing temperature environment of the process or the adhesive layer, which may cause contamination or adhesion. The adhesion strength between the agent layer and the substrate film. In order to prevent the precipitation of oligomers on the film surface, the best way is to reduce the oligomers contained in the film, and the original developer will fall off. • The thermal expansion of less than 0.20% will be the wafer surface. In the range, it is reversed from the semiconductor crystal placed on it, and for the expansion of the film, the process of coating is performed during the coating process in order to implement the hot chloroform to extract the weight of 0.6. The effective method for problems such as internal drop is -17- (15) (15) 200426934, and it is preferable to reduce the amount of low polymer extraction. Here, 'in order to reduce the extraction amount of the low polymer and make it into a desired range', it is preferable to make the intrinsic viscosity of poly-2 '6 to ethylene naphthalate to 0.4 5 (11 / § or more 0.90 ( 11 ~ below, more preferably 0.48 to 〇85 (11 / §, particularly preferably 0.50 to 0.80 dl / g. If the intrinsic viscosity of poly-2,6-naphthalene dicarboxylate does not reach the lower limit, then The amount of low polymer extracted from the film will be too much. On the other hand, if the upper limit is exceeded, excess load may be required during the polymerization and film formation process. Also, when the low polymer extraction amount is desired to make the desired range, the film The intrinsic viscosity is preferably from 0.40 to 0.90 dl / g. Here, the intrinsic viscosity is osmium (unit: dl / g) measured at 25 ° C using orthochlorohydrazone as a solvent. ≪ Thickness Refractive index in the direction > The refractive index (nz) in the thickness direction of the film of the present invention is preferably 1 · 5 0 1 or more and 1 · 5 1 5 or less. More preferably 1 · 5 0 3 or more 1 · 5 1 3 or less And particularly preferred is 1.504 or more and 1.512 or less. If the refractive index in the thickness direction is 1.50 or less, it is due to the anti-delamination resistance of the film. ) Will worsen, burrs will be generated on the cut end surface of the film, and sometimes chips will contaminate the work in the process. If the refractive index in the thickness direction exceeds 1.5, the film becomes brittle, resulting in When the tape is peeled off when used as a base film of a back-grinding tape or a dicing tape, the film may crack. In addition, if a film having a desired refractive index is to be produced in the thickness direction of the film, the base film is used. It can be achieved by increasing the heat-fixing temperature during the manufacture of the material, or by reducing the stretching ratio in the vertical or horizontal direction by -18- (16) (16) 200426934. ≪ Poor distribution of film thickness > Film thickness of the present invention The distribution difference is preferably 15% or less, more preferably 10% or less, and 8% or less for the average thickness of the film. As the distribution difference of the film thickness becomes smaller, the back grinding belt and the semiconductor wafer become smaller. And the bonding strength between the dicing tape and the bonding surface of the semiconductor wafer will be uniformized, so that stable tape taping can be achieved, and more precise backside grinding and cutting can be achieved. Precision and high density ≪ Young's modulas > The Young's modulus of the film of the present invention is preferably 5400 MPa or more and 6900 MPa or less, and more preferably 5500 MPa or more and 6 800 MPa or less, particularly preferably 5600 MPa or more and 6700 MPa or less. The difference in Young's flexural modulus between the two directions is preferably 1 OOOMPa or less. When the flexural modulus is less than 5400 MPa, the rigidity of the film may be insufficient. As a result, it may be difficult to form a thin film of a semiconductor wafer substrate film using a high elastic modulus of a polyethylene-2,6-naphthalate film. If the Young's flexural modulus exceeds 6900 MPa, a large amount of chips are likely to be generated when the film is cut, and there is a possibility of contamination and processing in a clean state. Furthermore, since the slicing of each diced wafer is difficult to expand from the tape or from the top of the wafer on the tape side, the production efficiency is reduced as a result. -19- (17) (17) 200426934 < Surface Roughness (Ra) > The centerline average surface roughness (Ra) of at least one side of the film of the present invention is preferably 3nm or more and 80nm or less, more preferably It is 5 nm or more and 60 nm or less, and particularly preferably 7 nm or more and 50 nm or less. In addition, when the film is composed of a plurality of layers having two or more layers. The sum of Ra on both sides of the film is preferably 10 nm or more, and more preferably 14 nm or more. Here, the average thickness of the center line (R a) is in accordance with the method specified by JI SB — 0 6 0 1, the cut-off line is 0.25 mm, and the measurement of the feeler uses a radius of 3 // m It was measured using a surface roughness meter (Kosaku Seisakusho Co., Ltd., trade name "Sharfo Koda SE — 3 0C" or (Kosho Precision Co., Ltd., trade name "Sharfolk SE-3CK"). If Ra is less than 3 nm, the sliding properties of the film are not good. It is easy to be scratched on the surface of the film when it is transported during film manufacture or rolled up, or when it is rolled into a roll state, it is rolled into the film and The air between the films is not easy to escape, and the flatness of the film may be damaged by the generated air retention mass. On the other hand, if Ra exceeds 80nm, the film slippage is too good, so when the film is wound up, or when an adhesive layer is coated on the surface of the film and wound up after the tape is wound, misalignment of the winding frequently occurs. possibility. < Film density > The density of the film of the present invention is preferably UWg / cm3 or more, and l ':) 64 g / cm or less. More preferably, it is more than i.357g / cm3 and less than 1.362g / cm3. If the density is 1.3 5 6g / cm3 or less, the crystallinity of the film is low and -20- (18) (18) 200426934 may not be sufficient in dimensional stability during semiconductor wafer processing. When the density exceeds 1.364 g / cm3, the toughness of the film is lost due to excessive crystallinity. As a result, the tape is easily broken when the tape is peeled off when the base material of the back grinding tape or the cutting tape is formed. Here, the density of the thin film was measured in a density-gradient tube using an aqueous solution of calcium nitrate as a solvent at 25 ° C based on the flotation method. < Average thickness of film > The average thickness of the film of the present invention is preferably 9 // m or more and 150 // m or less, more preferably 9 // m or more and 125 # m or less, and particularly preferably 12 // m or more 100 // m or less. If the average thickness of the film is 9 // m or less, the mechanical strength as a support during wafer processing or the protection function of the wafer surface will be insufficient. On the other hand, if the average thickness of the film exceeds 150 // m, the rigidity of the film will be extremely strong, and if the adhesive strength of the tape is slightly higher, the wafer will be damaged when the tape is peeled, or after cutting, Possibility of excessive film expansion. < Dynamic friction coefficient > The dynamic friction coefficient d) between the films of the film of the present invention is preferably 0.5 or less. If the dynamic friction coefficient d) exceeds 0.5, the handling properties during film formation and the coating process of the adhesive layer are not good, such as when walking on a roller in the process or when winding up into a roller shape Defects such as wrinkles or scratches can occur. -21-(19) (19) 200426934 < Difference in heat shrinkage > The heat shrinkage of the film when the film of the present invention is heat treated at 20 ° C for 10 minutes, the heat shrinkage of the film is 10 minutes, It is preferable that the absolute difference (| SMD-STD |) of the difference between the thermal shrinkage ratio (SMD) of the film in the film-forming direction and the thermal shrinkage ratio (STD) in the width direction is 0.60% or less. This 値, more preferably 0.5 % Or less, particularly preferably 0.40% or less. If the absolute difference between the heat shrinkage ratios exceeds 0.60%, the anisotropy of the dimensional change of the film when used as a base film of a back-grinding tape or a dicing tape is large and it is possible Anti-prying of a semiconductor wafer occurs. ≪ Back grinding tape > The back grinding tape of the present invention has an adhesive layer on one surface of the above-mentioned base film for a back grinding tape. The itself is a semiconductor crystal. During the back grinding process of the round back honing process, one side of the base film for the back grinding tape is covered with an adhesive, and the back grinding tape is used to fix the silicon wafer. ≪ Cutting tape > The dicing tape of the present invention is used for the dicing tape described above. An adhesive layer is provided on one surface of the base film. During the cutting process, which is a process of cutting a 1C wafer from a semiconductor wafer, a cutting tape with an adhesive layer laminated on one surface of the dicing substrate film is used. It is used for fixing silicon wafers, that is, it can fix silicon wafers in a stable state. • 22 · (20) 200426934 < coating layer > The substrate film for back grinding tape or dicing tape of the present invention For the purpose of easy adhesion with the adhesive, a coating layer may be provided on at least one of them. The coating layer is preferably at least 1 selected from the group consisting of polyester resin, urethane, acrylate resin, and vinyl resin. It is made of a water-soluble dispersible polymer resin, particularly preferably a polyester resin containing acrylic resin and acrylic resin. The polyester resin of the coating layer used in the present invention has a temperature (Tg) of 0 to 100 ° C, more It is preferably 10 to 90 ° C. The resin is preferably a water-soluble or dispersible polyester, but a dry organic solvent. The polyester resin is derived from a polybasic acid or a derivative thereof as described below and Polyols or their esters are derived from derivatives. That is, in a broader sense, parabens Formic acid, isophthalic acid, phthalic anhydride, 2,6-naphthalenedicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, adipic acid, trimellitic acid, pyromellitic acid, dimer acid (acid), 5-Sodium sulfoisophthalic acid, etc. Use these acids to form more than one species to synthesize copolymerized polyester resins. Also, although in a small amount, use maleic acid, itaconic acid, etc., which is an unsaturated polybasic acid component, and Hydroxycarboxylic acids such as hydroxy acids, and polyhydric alcohols can be exemplified by ethylene glycol, butanediol, diethylene glycol, dipropylene glycol, 1,6 ethylene glycol, 4 cyclohexanedimethanol, Stubble diol, dimethylolpropane, polyethylene ethane diol, poly (pentyl oxide) diol, bisphenol A, bisphenol oxirane or propylene oxide adduct, etc., but it is not limited And so on. The vitrification of the acrylate resin of the coating layer used in the present invention is to change the surface to be ethyl ester-based or hydrolysate vitrified. The polyester contains 2% of the ester to form a dibasic acid into a dicarboxylic acid and a decane dimeric. Also can be made benzyl: alcohol, 1 I '1, (the ring temperature of epoxy A (-23- (21) (21) 200426934

Tg)爲一50至50°C，更佳爲一 50至25°c者。該丙烯酸酯 樹脂較佳爲水中可溶性或分散性之丙烯酸樹脂，惟尙可含 有若干有機溶劑。 此種丙烯酸酯樹脂而言，可從如下述的丙烯酸酯單體 共聚合。此種丙烯酸酯單體而言，可例舉：丙烯酸烷酯、 甲基丙烯酸烷酯（烷基而言，甲基、乙基、正丙基、異丙 基、正丁基、異丁基、第三丁基、2-乙基己基、環己基 等）；2—羥基丙烯酸乙酯、2—羥基甲基丙烯酸乙酯、2 -羥基丙烯酸丙酯、2-羥基甲基丙烯酸丙酯等之含羥基 之單體；縮水甘油苯丙烯酸酯、縮水甘油基甲基丙烯酸酯 、烯丙基縮水甘油基醚等之含環氧基之單體；丙烯酸、甲 基丙烯酸、衣康酸、馬來酸、富馬酸、巴豆酸、苯乙烯磺 酸以及其鹽（鈉鹽、鉀酸、銨鹽、三級胺鹽等）等之羧基 或含有其鹽的單體；丙烯醯胺、甲基丙烯醯胺、N-烷基 丙烯醯胺、N-烷基甲基丙烯醯胺、N，N-二烷基丙烯醯 胺、N，N—二烷基甲基丙烯酸酯（烷基而言，甲基、乙 基、正丙基、異丙基、正丁基、異丁基、第三丁基、2 -乙基己基、環己基等）、N—烷氧基丙烯醯胺、N—烷氧 基甲基丙烯醯胺、N，N—二烷氧基丙烯醯胺、N，N —二 烷氧基甲基丙烯醯胺（烷氧而言，甲氧基、乙氧基、丁氧 基、異丁氧基等）、丙烯醯基嗎啉、N-羥甲基丙烯醯胺 、N—羥甲基甲基丙烯醯胺、N—苯基丙烯醯胺、N—苯基 甲基丙烯醯胺等之含胺基的單體；馬來酸酐、衣康酸酐等 之酸無水物的單體；乙烯基異氰酸酯、烯丙基異氰酸酯、 -24- (22) (22)200426934 苯乙烯、α —甲基苯乙烯、乙烯基甲基醚、乙烯基乙基醚 、乙_基二院氧砂院、院基馬來酸一酯、院基富馬酸一酯 、烷基衣康酸一酯、丙烯腈、甲基丙烯腈、二氯亞乙烯、 乙烯、丙烯、氯化乙烯、乙酸乙烯、丁二烯等的單體。作 爲塗佈層所用的丙烯酸酯樹脂，並不限定於此等。 本發明所用的上述組成物，爲形成塗膜起見，較佳爲 按水溶液、水分散液或乳化液等之水性塗液之形態使用。 形成塗液，需要時，可添加前述組成物以外之其他樹脂， 例如具有噁唑基的聚合物、三聚氰胺、環氧、氮雜環丙烷 (aziri dine )等之交聯劑、帶電防止劑、著色劑、表面活 性劑 '紫外線吸收劑、潤滑劑（塡充材、鱲）等。此種潤 滑劑係以改善薄膜之滑動劑或防黏連性（antiblocking ) 爲目的，需要時，可添加潤滑劑。 水性塗液之固體成分濃度，通常爲20重量％以下， 較佳爲1至1 0重量％。如此種比例爲1重量％以下時，則 在聚酯薄膜上的塗著性不足，另一方面，如超過20重量 %時，則塗佈劑之安定性或塗佈外觀可能惡化。 塗佈層，係對未拉伸薄膜或經完成一軸拉伸的薄膜塗 佈水性塗液，然後，往2方向或1方向拉伸並加以熱固定 即可於薄膜上強固地設置。塗工方法而言，可將輥塗法、 照相凹版塗佈法、輥塗法、噴塗法、氣動刮塗法、浸漬法 、簾流塗佈法等按單獨或組合方式使用。 <黏著劑> -25- (23) (23)200426934 構成本發明之背面磨削帶或切割帶的黏著劑而言，可 廣用在來周知者，較佳爲丙烯酸酯系黏著劑。丙烯酸酯系 黏著劑而言，具體上，可使用選自作爲以丙烯酸酯爲主的 構成單元的單獨聚合物及共聚合物的丙烯酸酯系聚合物與 其他官能性單體的共聚合物以及此等聚合物之混合物。例 如，很好使用碳數1至10之烷基醚之丙烯酸酯、碳數1 至10之烷基醇之甲基丙烯酸酯、乙酸乙烯酯、丙烯腈、 乙烯基烷基醚等。又，上述丙烯酸酯系共聚合物，可以單 獨1種或組合2種以上使用。 又，官能性單體而言，可使用：丙烯酸、甲基丙烯酸 、馬來酸、2—羥基丙烯酸乙酯、2 -羥基甲基丙烯酸乙酯 等。具有官能性單體的共聚合物黏著劑，藉由交聯劑之使 用即可設定黏接力及凝聚力爲任意之値。此種交聯劑而言 ，有：多元異氰酸酯化合物、多元環氧化合物、多元氮雜 環丙烷化合物、鉗合化合物等。多元異氰酸酯化合物而言 ，具體上可使用··二苯乙烯（toluylene )二異氰酸酯、二 苯基甲烷二異氰酸酯、六伸甲基二異氰酸酯、異佛爾酮二 異氰酸酯以及此等加成物型者。多元環氧化合物而言，具 體上可使用：乙二醇二縮水甘油醚、對苯二甲酸二縮水甘 油酯丙烯酸酯等。多元氮雜環丙烷化合物而言，具體上可 使用··參一 2，4，6— (1—氮雜環丙烷基）一 ；[，3，5 — 三哄、參〔1 一（2-甲基）一氮雜環丙院基〕三膦三卩井等 。又，鉗合化合物（Chelate compound)而言，具體上可 使用：乙基乙醯乙酸酯鋁二異丙醇酯、參（乙基乙醯乙酸 -26- (24) (24)200426934 酯）鋁等。 聚合此等單體所得的丙烯酸酯系聚合物之分子量，爲 l.OxlO5 至 ΙΟ.ΟχΙΟ5、較佳爲 4.0χΐ〇5 至 8·0χ105。再者 ，作爲黏著劑層，亦可使用照射放射線即會硬化而能降低 撿取時之黏著力者。具體上’較佳爲使用以上述丙嫌酸酯 系共聚合物爲主劑’而在此中含有放射線聚合性化合物的 黏著劑。此種放射線聚合性化合物而言，廣泛採用例如日 本專利特開昭60 — 196,956號公報及特開昭60-223,139 號公報所揭示之因光照射而能三維網狀化的分子內至少具 有光聚合性碳-碳雙鍵2個以上的低分子量化合物，具體 上可使用：三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙 烯酸酯、異戊四醇四丙烯酸酯、二異戊四醇一羥基五丙烯 酸酯、二異戊四醇六丙烯酸酯或1，4一丁二醇二丙烯酸 酯、1，6—己二醇二丙烯酸酯、聚乙二醇二丙烯酸酯、市 售之低酯（oligoester)丙嫌酸酯等。 再者’作爲放射線聚合性化合物，除如上述的丙烯酸 酯系化合物之外，尙可使用胺基甲酸乙酯丙烯酸酯系低聚 合物。胺基甲酸乙酯丙烯酸酯系低聚合物，係對使聚酯型 或聚醚型等的多元醇化合物與多元異氰酸酯化合物例如2 ，4 —甲伸苯基（tolylene)二異氰酸酯、2，6_甲伸苯基 一異氰酸醋、1，3 —伸茬基（xylylene)二異氰酸醋、1， 4一伸茬二異氰酸酯、二苯基甲烷4，4一二異氰酸酯等反 應所得的末端異氰酸酯胺基甲酸乙酯預聚合物（ ptepolgmer )，使具有羥基的丙烯酸酯或甲基丙烯酸酯例 -27- (25) 200426934 如2 —經基乙基丙嫌酸醋或2-經基乙基甲基 -羥基丙基丙烯酸酯、2 -羥基丙基甲基丙燃 二醇丙烯酸酯、聚乙二醇甲基丙烯酸酯等反應 種胺基甲酸乙酯丙烯酸酯系低聚合物，係具有 至少1個以上的放射線聚合性化合物。 如作爲此種胺基甲酸乙酯丙烯酸酯系低聚 使用分子量爲300 0至30000，較佳爲3000 3 佳爲4000至8000者時，則由於即使半導體晶 時，在晶圓晶片之撿取時晶片表面仍然不致於 之故很合適。又，如將胺基甲酸乙酯丙烯酸醋 作爲放射線聚合性化合物使用時，比較使用如 特開昭6 0 - 1 9 6，9 5 6號公報所揭示般分子內 碳-碳雙鍵至少2個以上的低分子量化合物時 作爲黏著片材極爲優異者。亦即，黏著片材之 前之黏接力足夠大而放射線照射後則黏接力足 果在晶圓撿取時黏著劑不致於殘留在晶片表面 又，需要時，可在黏著劑中，除如上述的 射線聚合性化合物之外，尙可含有因放射線照 化合物。藉由此種放射線照射而使將著色的化 黏著劑層中，即可在經對黏著片材照射放射線 被著色，因而當使用光感測器以檢測晶圓晶片 檢測精度，結果在晶圓晶片之撿取時不致於發 又可獲得依目視即可立即判明對黏著片材有否 線的效果。 丙烯酸酯、2 酸酯、聚乙 (所製得。此 ‘碳-碳雙鍵 :合物而特別 ^ 10000 ，更 i圓表面粗糙 附著黏著劑 系低聚合物 在日本專利 有光聚合性 ，爲能製得 放射線照射 夠下降，結 〇 黏著劑及放 射而著色的 合物包含於 後該片材即 時即可提升 生誤動作。 照射過放射 -28- (26) (26)200426934 藉由放射線照射而著色的化合物之較佳的具體例而言 ，可例舉：無色（leuco )染料。無色染料而言，好用者 爲：慣用之三苯基甲烷系、螢烷（flu or an )系、啡噻哄（ phenothiazine)系、金胺（anramine)系、螺 D比喃（ spiropyran )系。與此等無色染料同樣好用的顯色劑而言 ，可例舉在來所使用之：苯酚甲醛樹脂之初期聚合物、芳 香族羧酸衍生物、活性白土等的電子受容體，再者，如欲 變化色調時，則亦可組合各種周知之發色劑使用。此種因 放射線照射而著色的化合物，可先在有機溶劑中溶解後再 包含於黏著劑層中，亦可作成微粉末狀後再包含於黏著劑 層中。此種化合物可於黏著劑層中按〇. 〇 1至1 0重量％， 較佳爲0.5至5重量％之量使用爲宜。 <背面磨削帶複合體> 本發明中，背面磨削帶通常係按黏著劑層表面由離模 薄膜所保護的背面磨削帶複合體之狀態所保管者，而在背 面過程中將離模薄膜加以剝離去除後使用。亦即，本發明 之背面磨削帶複合物，係在背面磨削帶之黏著層之上再具 有離模薄膜。 此種離模薄膜，係於由聚酯所成的基材薄膜之1個面 上層含有砂酮I離模層所成者，將砂酮離模層面與背面磨削 帶之黏著層面加以互相貼合，作成背面磨削帶複合物。離 模薄膜，可於由矽酮離模層與聚酯所成的基材薄膜之間再 具有底漆（primer )層。 -29- (27) (27)200426934 <切割帶複合物〉 本發明中，切割帶通常係按黏著劑層表面由離膜薄膜 所保護的背面切割帶複合物之狀態所保管者，而在切割@ 程中將離模薄膜加以剝離去除後使用。亦即，本發明之切 割帶複合物，係在切割帶之黏著層之上再具有離膜薄膜° 此種離模薄膜，係於由聚酯所成的基材薄膜之1個面 上層含有矽酮離模層所成者，將矽酮離模層面與切割帶之 黏著層面加以互相貼合’作成切割帶複合體。離模薄膜’ 可於由矽酮離模層與聚酯所成的基材薄膜之間再具有底漆 層。 <構成離模薄膜的聚酯基材薄膜> 構成本發明之離模薄膜的聚酯基材薄膜，可以與本發 明之半導體晶圓加工用基材薄膜相同聚酯所構成，惟亦可 以不相同構成。此種聚酯而言，可例示··以聚對苯二甲酸 乙二酯、聚一2，6—萘二甲酸乙二酯爲主要成分的聚酯。 在此，主要係指聚合物之構成成分中全重複單元之至少 80莫耳％爲對苯二甲酸乙二酯或2，6一萘二甲酸乙二酯 之意，更佳爲90莫耳％以上，特佳爲95莫耳％以上。 另外，構成離模薄膜的聚酯基材薄膜，係在背面磨削 加工及切割加工後爲照射紫外線以使黏著劑固化，並降低 d者力起見》該基材薄膜之光線穿透率較佳爲85 %以上。 -30- (28) (28)200426934 <矽酮離模層> 構成本發明之離模薄膜的矽酮雜模層，例如，可將含 有固化性矽酮的塗佈液塗佈於聚酯基材薄膜之1個面上， 乾燥、固化後，即可形成。固化性矽酮樹脂而言，可例示 :縮合反應系、加作反應系、紫外線或電子線固化系等任 一種反應系者，可由此種固化性矽酮樹脂之中使用1種以 上。 <製造條件> 茲就本發明之基材薄膜之製造方法加以詳述。本發明 之聚一 2，6—萘二甲酸乙二酯基材薄膜，係將在通常之擠 壓溫度，亦即熔點（以下以Tm表示）以上（Tm + 70°C ) 以下之溫度下熔融擠壓所得薄膜狀熔融物，在旋轉冷卻輥 筒表面加以急冷，以製得特性黏度爲0.40至0.90dl/g之 未拉伸薄膜。在此過程中，以提高薄膜狀熔融物與旋轉冷 卻輥筒間的密著性之目的，周知有對薄膜狀熔融物賦與靜 電荷的靜電密著法。一般，由於聚一 2，6—萘二甲酸乙二 酯之熔融物之電阻較高之故，有時與上述之冷卻輥筒間的 靜電密著會不足夠。爲此之對策而言，較佳爲對聚- 2，6 一萘二甲酸乙二酯之全2官能性羧酸成分，含有具有〇.1 至1 0莫耳％之酯形成性官能基的磺酸四級鱗。 如此所得未拉伸薄膜，在1 20至1 70 °C下，更佳爲 130至160°C之溫度下，往縱方向按2.8至3.5倍之拉伸 倍率加以拉伸，接著，往橫方向在1 2 0至1 5 0 °C之溫度下 -31 - (29) (29)200426934 按2.8至3 · 6倍之拉伸倍率加以拉伸，而成爲雙軸拉伸定 向薄膜。在此，如將橫拉伸倍率作成縱拉伸倍率之0.90 至1 · 1 5倍程度之倍率即能將薄膜之厚度之分佈差作成所 期望之範圍之故很合適。又，此等拉伸作業可爲分開爲複 數階段所實施的多段拉伸。 如此方式所得的雙軸拉伸定向薄膜，較佳爲在235至 255 °C，更佳爲在240 °C至250 °C之溫度下熱固定0.3至20 秒鐘。然後，以降低熱收縮率爲目的，更佳爲往縱方向及 /或橫方向按鬆弛率〇 · 5至1 5 %之範圍實施熱鬆緩處理。 另外，從拉伸機之機構來看，一般橫方向之鬆弛較容易實 施，而容易使橫方向之熱收縮率接近0%。另一方面，由 於難於使縱方向之熱收縮率，特別是200 °C附近之熱收縮 率之故，如採用前述的縱方向及橫方向之拉伸倍率以及拉 伸溫度較爲有效。 又，本發明之聚酯薄膜，較佳爲除前述的熱處理之外 ’再於捲取後實施熱處理。捲取後之熱處理方法並不特定 ’惟特佳爲下垂式之鬆弛熱處理法。下垂式之鬆弛熱處理 法可例舉：將處理的薄膜經過上方所設置的輥輪並因自重 往下方下垂’在其當中加熱後被下方之輥輪所冷卻之下改 變方向爲略水平方向，使用夾輥（nip roller)將捲取張力 遮斷後再行捲取的方法。下垂距離較爲2至10m程度， 如在2m以下時因自重過小而容易喪失平面性，且因加熱 範圍短之故非常難於獲得鬆弛效果。另一方面，如下垂距 離超過1 0m，則由於作業性不佳，且自重將加重之故，視 -32- (30) (30)200426934 加熱領域之位置，有時得不到所期望的熱收縮率。 此種製膜過程後之熱處理，只要是所得的雙軸拉伸定 向聚酯薄膜在20(TC下的熱收縮率能在所期望的範圍者， 則即使在薄膜之製膜過程內（熱固定後之鬆弛處理）實施 或在薄膜之製膜妥並一度捲取後的鬆弛熱處理中實施，其 處理方法並不特別限定。較佳的鬆弛熱處理溫度，係薄膜 溫度能成爲200至240 °C之方式加以處理者。如薄膜溫度 在200°C以下時，則難以降低在200 °C下的熱收縮率，而 另一方面，如薄膜溫度超過240°C，則平面性容易惡化， 甚至於低聚合物析出而薄膜可能變白。此種白化係受壓力 歷程所影響，例如將吊帶掛架於薄膜輥之薄膜部分搬運時 ，則即使在200°C以下，仍然與吊帶接觸的部分有時會白 化。在此，薄膜溫度，可使用非接觸之紅外線式溫度計（ 例如巴氏式輻射溫度計）測定。在此等熱處理方法之中， 由於能容易均勻抑制薄膜之廣範圍的範圍之熱收縮率之故 ，下垂式鬆弛熱處理法較製膜過程中的熱處理爲佳。 另一方面’構成離模薄膜的聚酯基材薄膜，可由在來 周知、或業界所熟悉的方法製得。亦即，將經熔融•擠壓 的聚酯之未拉伸薄膜往單軸方向拉伸，接著，往與上述拉 伸方向成爲垂直的方向拉伸，再實施熱固定處理。本發明 中’離模層係可藉由例如將含有離模層之成分的塗佈液塗 佈於聚酯基材薄膜上並加熱•乾燥，即可塗設。塗佈液之 塗佈方法而言，可適用周知之塗工方法，例如可採用輥塗 法、刮刀塗佈法。將由上述方法所得的離模薄膜貼合於背 -33- (31) (31)200426934 面磨削帶或切割帶上，即可得各複合體。 【實施方式】 〔實施例〕 茲舉出實施例，將本發明內容再詳細說明如下。在此 ，實施例中之各特性値係依如下述方法所測定或評價者。 又，實施例中之份及比，除非特別註明，均表示重量份及 重量比。 (1 )熱收縮率 於經設定溫度爲2 0 0 °c的烘箱內，按無緊張狀態保持 薄膜1 〇分鐘，將加熱處理前後的尺寸變化作爲熱收縮率 S ( % )依下式（1 )算出。 S=〔 (L〇 — L) /L〇] xlOO ......... ( 1) 在此，分別表示 L〇 :熱處理前之標點間距離， L :熱處理後之標點間距離。 另外，試料寬幅爲20mm，長度爲200mm，而熱處理 前之標點間距離爲150mm。在薄膜之製膜方向（MD)及 寬幅方向（TD )之兩方向實施測定，求出熱收縮率。 (2 )低聚合物萃取量 使用索司勒（Soxhlet)萃取器將薄膜試樣5g在氯仿 1^1實施萃取操作24小時。測定乾燥後之薄膜試樣之重量 ’ ί足萃取前重量W() ( g)及萃取後重量Wi ( g)依下式（ -34- (32) (32)200426934 2)求出低聚合物萃取量（K )(重量％ )。 K= [ ( W〇- Wj ) /W〇 ] xlOO ......... ( 2 ) (3 )加熱後之低聚合物析出率 將薄膜固定於本框後在160 °C之熱風循環（空氣）式 乾燥器內保持1 〇分鐘後，對薄膜表面進行鋁之沈積，使 用微分干擾式光學顯微鏡攝影薄膜表面之照片。按此照片 上低聚合物（顯現爲白色斑點狀）所佔面積總和對照片全 面積的百分率，以評價加熱低聚合物析出率。 〇：低聚合物析出率2.5 %以下 △:低聚合物析出率2.5至4.5 % X :低聚合物析出率4.5 %以上 (4 )薄膜在厚度方向之折射率（nz ) 使用阿貝折射計（（股）阿他哥社製），在25 t下 使用Na— D線求出薄膜之厚度方向（z)之折射率。 (5)楊氏撓曲模量（Young’s modulus) 將試料切裁爲寬幅l〇mm、長度150mm、作成夾盤間 隔100mm，按拉伸速度l〇mm/分鐘，記錄紙速度500mm/ 分鐘，使用萬能精密型之萬能拉伸試驗裝置拉伸。從薄膜 之製膜方向（MD )及寬幅方向（TD )之兩方向實施測定 ，從所得的荷重-伸長曲線之切線算出楊氏撓曲模量。 -35- (33) (33)200426934 (6)中心線平均粗糙度（Ra) 準照JIS B— 060 1所規定的方法，卸開線爲〇.25mm 、測定觸針係使用半徑3 // m者並使用表面粗糙度計（（ 股）東京精密製之商品名「沙佛科姆S E - 3 CK」）測定 (7 )薄膜厚度 使用測微計（安立知（股）製，商品名「K — 402B型 」），在薄膜之製膜方向（MD)及寬幅方向（TD)按各 10cm間隔實施測定，以全部計，測定3 00處之薄膜厚度 。算出所得的3 00處之薄膜厚度之平均値，以獲得薄膜平 均厚度t 〇 ( // m )。 再者，使用電子測微計（安立知（股）製，商品名「 K— 312A型」，按針壓30g，行走速度25mm/秒鐘，就薄 膜之製膜方向（MD)及寬幅方向（TD)涵蓋各2m長度 加以測定，以獲得連續厚度圖表。 從此圖表讀取最大厚度U ( // m)及最小厚度t2 ( μ m)。 從如此所得的薄膜平均厚度to ( // m )以及最大厚度 ti ( // m )和最小厚度t2 ( # m )，依下式（3 )求出厚度 之分佈差D ( % )。 D=〔 ( ti - t2 ) /t〇 ] χΙΟΟ ......... ( 3 ) (8 )動摩擦係數（# d ) -36- (34) (34)200426934 於將75mm (寬幅）χ 1 〇〇mm (長度）之切裁薄膜（ 試樣）疊合2片之上，載置作爲荷重W(g)之重量200g 之重錘，使上側薄膜按15 0mm/分鐘之速度滑動，從滑動 時之力量Fd ( g )計算動摩擦係數（# d )。在此，薄膜 係在25 °C，65 %RH (相對濕度）下調濕24小時後加以測 定。Tg) is from 50 to 50 ° C, and more preferably from 50 to 25 ° c. The acrylate resin is preferably a water-soluble or dispersible acrylic resin, but may contain some organic solvents. Such an acrylate resin can be copolymerized from an acrylate monomer as described below. Examples of such acrylate monomers include alkyl acrylates and alkyl methacrylates (for alkyl groups, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, Tertiary butyl, 2-ethylhexyl, cyclohexyl, etc.); the content of 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxymethacrylate, etc. Hydroxyl monomers; epoxy-containing monomers such as glycidyl phenyl acrylate, glycidyl methacrylate, allyl glycidyl ether; acrylic acid, methacrylic acid, itaconic acid, maleic acid, Fumaric acid, crotonic acid, styrene sulfonic acid and its salts (sodium salt, potassium acid, ammonium salt, tertiary amine salt, etc.) and other carboxyl groups or monomers containing salts thereof; acrylamide, methacrylamide , N-alkyl acrylamide, N-alkyl methacrylamide, N, N-dialkyl acrylamide, N, N-dialkyl methacrylate (for alkyl, methyl, Ethyl, n-propyl, isopropyl, n-butyl, isobutyl, third butyl, 2-ethylhexyl, cyclohexyl, etc.), N-alkoxypropene , N-alkoxymethacrylamide, N, N-dialkoxyacrylamide, N, N-dialkoxymethacrylamide (for alkoxy, methoxy, ethoxy , Butoxy, isobutoxy, etc.), acrylamidomorpholine, N-methylol acrylamide, N-methylol acrylamide, N-phenylacrylamide, N-phenyl Monoamine-containing monomers such as methacrylamide; monomers of acid anhydrides such as maleic anhydride, itaconic anhydride; vinyl isocyanate, allyl isocyanate, -24- (22) (22) 200426934 benzene Ethylene, Alpha-methylstyrene, Vinyl methyl ether, Vinyl ethyl ether, Oxygen ethoxylate, Sodium maleate monoester, Sodium fumarate monoester, Alkylam Monomers of acid monoester, acrylonitrile, methacrylonitrile, vinylidene chloride, ethylene, propylene, vinyl chloride, vinyl acetate, butadiene and the like. The acrylic resin used as the coating layer is not limited to these. In order to form a coating film, the above-mentioned composition used in the present invention is preferably used in the form of an aqueous coating solution such as an aqueous solution, an aqueous dispersion or an emulsion. To form a coating liquid, if necessary, other resins than the foregoing composition may be added, such as a polymer having an oxazole group, a melamine, an epoxy, a crosslinking agent such as aziri dine, an antistatic agent, and coloring. Agents, surfactants' UV absorbers, lubricants (塡 fillers, 鱲), etc. This lubricant is used for the purpose of improving the sliding agent or antiblocking property of the film. If necessary, a lubricant can be added. The solid content concentration of the aqueous coating liquid is usually 20% by weight or less, preferably 1 to 10% by weight. If the ratio is 1% by weight or less, the coating property on the polyester film is insufficient. On the other hand, if it exceeds 20% by weight, the stability of the coating agent or the appearance of the coating may be deteriorated. The coating layer is formed by applying an aqueous coating solution to an unstretched film or a film that has been uniaxially stretched, and then stretched in 2 or 1 directions and heat-fixed to form a strong setting on the film. As for the coating method, a roll coating method, a gravure coating method, a roll coating method, a spray coating method, a pneumatic blade coating method, a dipping method, a curtain flow coating method, or the like may be used alone or in combination. < Adhesive > -25- (23) (23) 200426934 The adhesive constituting the back-grinding tape or dicing tape of the present invention can be widely used, and it is preferably an acrylic adhesive. As the acrylate-based adhesive, specifically, a copolymer of an acrylate-based polymer and other functional monomers selected from the group consisting of a single polymer and a co-polymer, which are constituent units mainly composed of acrylate, and the like can be used. And other polymer mixtures. For example, acrylates of alkyl ethers having 1 to 10 carbons, methacrylates of alkyl alcohols having 1 to 10 carbon, vinyl acetate, acrylonitrile, vinyl alkyl ether, and the like are preferably used. The acrylate-based copolymer may be used alone or in combination of two or more. As the functional monomer, acrylic acid, methacrylic acid, maleic acid, 2-hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, and the like can be used. The copolymeric adhesive having a functional monomer can be used to set the adhesive force and cohesive force to arbitrary values by using a cross-linking agent. Examples of such crosslinking agents include polyisocyanate compounds, polyepoxide compounds, polyazacyclopropane compounds, and clamping compounds. As the polyisocyanate compound, specifically, stilbene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, and these adduct types can be used. As the polyvalent epoxy compound, specifically, ethylene glycol diglycidyl ether, terephthalate diglycidyl acrylate, and the like can be used. For polyvalent aziridine compounds, concretely, reference can be used .... ref. 1,2,6— (1-azetidinyl) -1; [, 3,5—triol, ref. [1 一 (2- (Methyl) aziridinyl] triphosphine triamidine and the like. As the chelate compound, specifically, ethyl acetoacetate aluminum diisopropanol ester and ginseng (ethyl acetoacetate -26- (24) (24) 200426934 ester) can be used. Aluminum, etc. The molecular weight of the acrylate-based polymer obtained by polymerizing these monomers is 1.0x10-5 to 100x105, preferably 4.0x0.5 to 8.0x105. In addition, as the adhesive layer, it is also possible to use one that will harden when irradiated with radiation and can reduce the adhesive force during picking up. Specifically, it is preferred to use an adhesive containing the above-mentioned propionic acid ester-based copolymer as the main agent and containing a radiation polymerizable compound therein. As such a radiation polymerizable compound, for example, Japanese Patent Laid-Open No. 60-196,956 and Japanese Patent Laid-Open No. 60-223,139 are widely used, and at least photopolymerization is carried out in a molecule capable of three-dimensional network formation by light irradiation. Low-molecular-weight compounds with two or more carbon-carbon double bonds, specifically, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, isopentaerythritol tetraacrylate, and diisopentaerythritol Monohydroxypentaacrylate, diisopentaerythritol hexaacrylate or 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available low esters (Oligoester) propionate. In addition, as the radiation polymerizable compound, in addition to the above-mentioned acrylate-based compounds, urethane acrylate-based oligomers can be used. Urethane acrylate-based oligomers are used to make polyester or polyether polyol compounds and polyisocyanate compounds such as 2,4-tolylene diisocyanate, 2,6_ Terminal isocyanate obtained by the reaction of methyl phenyl monoisocyanate, 1,3-xylylene diisocyanate, 1,4-diisocyanate, diphenylmethane 4,4-diisocyanate, etc. Urethane prepolymer (ptepolgmer) to make acrylates or methacrylates with hydroxyl groups Example-27- (25) 200426934 As 2-ethyl ethyl propionate or 2- ethyl ethyl ester -Hydroxypropyl acrylate, 2-hydroxypropylmethylpropanediol acrylate, polyethylene glycol methacrylate and other reactive species Urethane acrylate-based oligomers, which have at least one The above-mentioned radiation polymerizable compound. For example, when such a urethane acrylate oligomer is used with a molecular weight of 300 to 30,000, preferably 3000 3, and preferably 4,000 to 8,000, it is because even when a semiconductor crystal is used, when a wafer is picked up, The wafer surface is still not suitable for the reason. When urethane acrylate is used as a radiation polymerizable compound, at least two carbon-carbon double bonds in the molecule as disclosed in JP-A-Sho 6 0-196, 9 5 6 are used in comparison. The above low molecular weight compounds are extremely excellent as an adhesive sheet. That is, the adhesive force before the sheet is sufficiently large, and the adhesive force after radiation irradiation is sufficient so that the adhesive does not remain on the wafer surface when the wafer is picked up. If necessary, it can be in the adhesive, except as described above. Radon may contain compounds other than radiation-polymerizable compounds. The colored adhesive layer can be colored by irradiating the adhesive sheet with such radiation irradiation. Therefore, when a light sensor is used to detect the wafer wafer detection accuracy, the result is in the wafer wafer. When picking up, it will not be delayed and you can immediately determine whether there is a line effect on the adhesive sheet by visual inspection. Acrylic acid ester, 2 acid ester, polyethylene (prepared. This' carbon-carbon double bond: compound is especially ^ 10000, more round surface rough adhesion adhesive low-polymer is photopolymerizable in Japanese patent, as It can be made that the radiation exposure can be reduced enough, and the adhesive and the compound colored by radiation can be included in the sheet to immediately improve the malfunction. Irradiated -28- (26) (26) 200426934 By radiation irradiation For specific examples of the colored compound, leuco dyes can be cited. For leuco dyes, users who use them are triphenylmethane, flu or an, and brown Phenothiazine system, anramine system, and spiropyran system. For color developing agents that are equally useful as these colorless dyes, the following can be used: phenol formaldehyde resin Initially, it is an electronic acceptor such as a polymer, an aromatic carboxylic acid derivative, and activated clay. Furthermore, if it is desired to change the color tone, it can be used in combination with various well-known coloring agents. This kind of compound is colored by radiation irradiation. Can be first dissolved in organic After being dissolved, it is then included in the adhesive layer, or it can be made into a fine powder and then included in the adhesive layer. This compound can be added in the adhesive layer in an amount of 0.001 to 10% by weight, preferably 0.5. It is preferably used in an amount of up to 5% by weight. ≪ Back grinding belt composite > In the present invention, the back grinding belt is usually in the state of the back grinding belt composite protected by the release film according to the surface of the adhesive layer. The stored film is peeled off and removed during the back process. That is, the back-grinding tape composite of the present invention has a release film on top of the adhesive layer of the back-grinding tape. This kind of mold release film is made of polyester. One of the top layers of the base film contains a ketone I release layer. The ketone release layer and the adhesive layer of the back grinding belt are bonded to each other. To make a back-grinding tape composite. The release film can have a primer layer between the silicone release layer and the base film made of polyester. -29- (27) (27) 200426934 < Cutting tape composite> In the present invention, the cutting tape is usually based on the surface of the adhesive layer. The person who keeps the state of the back cutting tape compound protected by the release film is used after peeling and removing the release film during the cutting process. That is, the cutting tape compound of the present invention is adhered to the cutting tape. There is a release film on top of the layer ° This release film is formed by the silicone release layer on one surface of the base film made of polyester. The silicone release layer and the cutting tape The adhesive layers are bonded to each other to form a cutting tape composite. The release film can have a primer layer between the silicone release layer and the base film made of polyester. ≪ Polyester substrate film> The polyester substrate film constituting the release film of the present invention may be composed of the same polyester as the substrate film for semiconductor wafer processing of the present invention, but may have a different structure. Examples of such polyesters include polyesters mainly composed of polyethylene terephthalate and polyethylene-2,6-naphthalate. Here, it mainly means that at least 80 mole% of the total repeating units in the constituents of the polymer are ethylene terephthalate or ethylene glycol 2,6-naphthalene dicarboxylate, more preferably 90 mole% Above, especially preferred is 95 mol% or more. In addition, the polyester base film constituting the release film is irradiated with ultraviolet rays after the back grinding and cutting processes to cure the adhesive and reduce the power of the base film. It is preferably 85% or more. -30- (28) (28) 200426934 < Silicone release layer > The silicone mold release layer constituting the release film of the present invention can be coated with, for example, a coating liquid containing a curable silicone on a polymer. One side of the ester base film can be formed after drying and curing. Examples of the curable silicone resin include condensation reaction systems, addition reaction systems, ultraviolet or electron curing systems, and one or more of these curable silicone resins can be used. < Manufacturing conditions > The method for manufacturing the base film of the present invention will be described in detail. The poly (2,6-naphthalene dicarboxylate) substrate film of the present invention will be melted at a normal extrusion temperature, that is, a temperature above the melting point (hereinafter referred to as Tm) (Tm + 70 ° C). The obtained film-like melt is extruded and quenched on the surface of a rotary cooling roll to obtain an unstretched film having an intrinsic viscosity of 0.40 to 0.90 dl / g. In this process, for the purpose of improving the adhesion between the film-like melt and the rotary cooling roller, an electrostatic adhesion method is known in which a static charge is imparted to the film-like melt. Generally, since the melt of poly (2,6-naphthalene dicarboxylate) has a high electrical resistance, the static adhesion with the above-mentioned cooling roller may be insufficient. For this purpose, it is preferred that the poly-2,6-mononaphthalene dicarboxylate is a bifunctional carboxylic acid component containing 0.1 to 10 mole% of an ester-forming functional group. Quaternary scale of sulfonic acid. The unstretched film thus obtained is stretched at a stretching ratio of 2.8 to 3.5 times in the longitudinal direction at a temperature of 120 to 70 ° C, more preferably 130 to 160 ° C, and then to the transverse direction. At a temperature of 120 to 150 ° C, -31-(29) (29) 200426934 is stretched at a draw ratio of 2.8 to 3.6 times, and becomes a biaxially oriented film. Here, if the horizontal stretching ratio is set to a ratio of about 0.90 to 1.5 times the longitudinal stretching ratio, it is suitable that the difference in thickness distribution of the film can be set to a desired range. Further, these stretching operations may be a plurality of stages of stretching performed separately. The biaxially oriented film obtained in this way is preferably heat-fixed at a temperature of 240 to 250 ° C for 0.3 to 20 seconds. Then, in order to reduce the thermal shrinkage ratio, it is more preferable to perform a thermal relaxation treatment in a range of 0.5 to 15% in the longitudinal direction and / or the transverse direction. In addition, from the perspective of the mechanism of the stretching machine, the relaxation in the transverse direction is generally easier to implement, and the heat shrinkage rate in the transverse direction is easy to approach 0%. On the other hand, since it is difficult to make the thermal shrinkage in the longitudinal direction, especially around 200 ° C, it is effective to use the aforementioned stretching ratios in the longitudinal and transverse directions and the stretching temperature. The polyester film of the present invention is preferably heat-treated after being wound up in addition to the aforementioned heat-treatment. The heat treatment method after coiling is not specific, but it is particularly preferable that it is a sagging relaxation heat treatment method. The sagging relaxation heat treatment method can be exemplified: the processed film passes through the roller set above and hangs down due to its own weight. 'After being heated, it is cooled by the roller below to change the direction to a slightly horizontal direction. A method in which a nip roller intercepts the winding tension and then takes up the winding. The drooping distance is about 2 to 10m. If the weight is less than 2m, the flatness is easily lost, and the relaxation effect is very difficult to obtain due to the short heating range. On the other hand, if the vertical distance is more than 10m, the workability is not good and the weight will be increased. Depending on the location of the heating area, the desired heat may not be obtained in -32- (30) (30) 200426934. Shrinkage. As long as the heat treatment after the film forming process is performed, as long as the thermal shrinkage of the obtained biaxially stretched oriented polyester film at 20 ° C can be within a desired range, even during the film forming process (heat fixing After the relaxation treatment) or in the relaxation heat treatment after the film is formed and wound up once, the treatment method is not particularly limited. The preferred relaxation heat treatment temperature is that the film temperature can be 200 to 240 ° C. If the film temperature is below 200 ° C, it is difficult to reduce the heat shrinkage rate at 200 ° C. On the other hand, if the film temperature exceeds 240 ° C, the flatness is easily deteriorated, or even low. The polymer precipitates and the film may turn white. This type of whitening is affected by the pressure history. For example, when the suspender is transported on the film part of the film roll, the part that is still in contact with the sling may sometimes be below 200 ° C. Whitening. Here, the temperature of the film can be measured using a non-contact infrared thermometer (such as a Pap type radiation thermometer). Among these heat treatment methods, it is easy to suppress the film uniformly. Due to the thermal shrinkage of the range, the sagging relaxation heat treatment method is better than the heat treatment during film formation. On the other hand, the polyester substrate film constituting the release film can be well known in the future or familiar in the industry. It is obtained by the method. That is, the unstretched film of the melted and extruded polyester is stretched in a uniaxial direction, and then stretched in a direction perpendicular to the stretched direction, and then heat-fixed. In the invention, the "release layer" can be applied by, for example, applying a coating liquid containing a component of the release layer on a polyester substrate film and heating and drying it. The coating liquid coating method A well-known coating method can be applied, for example, a roll coating method or a doctor blade coating method can be used. The release film obtained by the above method is bonded to the back-33- (31) (31) 200426934 surface grinding tape or cutting tape [Embodiments] Examples are given below to explain the content of the present invention in detail below. Here, the characteristics of the examples are measured according to the following methods or Evaluators. Also, the proportions and ratios in the examples Unless otherwise specified, all parts by weight and weight ratio are indicated. (1) The heat shrinkage rate is maintained in the oven at a set temperature of 200 ° C, and the film is maintained for 10 minutes in a tension-free state, and the dimensional changes before and after the heat treatment are changed. The heat shrinkage rate S (%) is calculated according to the following formula (1): S = [(L0—L) / L0] x 100 ... (1) Here, each represents L0: Distance between punctuation points before heat treatment, L: distance between punctuation points after heat treatment. In addition, the sample width is 20mm and length is 200mm, and the distance between punctuation points before heat treatment is 150mm. In the film forming direction (MD) and wide width of the film The measurement was performed in two directions (TD) to determine the thermal shrinkage. (2) Low polymer extraction volume A Soxhlet extractor was used to extract 5 g of a thin film sample in chloroform 1 ^ 1 for 24 hours. Measure the weight of the dried thin film sample. 足 The weight before extraction W () (g) and the weight after extraction Wi (g) are determined by the following formula (-34- (32) (32) 200426934 2). Extraction amount (K) (% by weight). K = [(W〇- Wj) / W〇] x100 ... (2) (3) Low polymer precipitation rate after heating Fix the film to the frame with hot air at 160 ° C After being kept in the circulation (air) dryer for 10 minutes, aluminum was deposited on the film surface, and the film surface was photographed using a differential interference optical microscope. According to the percentage of the total area of the low polymer (appearing as white spots) on the photo to the total area of the photo, the heating low polymer precipitation rate was evaluated. 〇: Low polymer precipitation rate of 2.5% or less △: Low polymer precipitation rate of 2.5 to 4.5% X: Low polymer precipitation rate of 4.5% or more (4) The refractive index (nz) of the film in the thickness direction uses an Abbe refractometer ( (Made by Atago Co., Ltd.), the refractive index in the thickness direction (z) of the film was obtained using Na-D line at 25 t. (5) Young's modulus The specimen is cut to a width of 10 mm, a length of 150 mm, and a chuck interval of 100 mm. The drawing speed is 10 mm / minute, and the recording paper speed is 500 mm / minute. It is stretched with a universal precision type universal tensile test device. The measurement was performed from two directions of the film forming direction (MD) and the wide direction (TD) of the film, and the Young's flexural modulus was calculated from the tangent of the obtained load-elongation curve. -35- (33) (33) 200426934 (6) Centerline average roughness (Ra) According to the method specified in JIS B—0601, the release line is 0.25mm, and the measuring probe system uses a radius of 3 // m) and use a surface roughness meter ((share) Tokyo Precision Co., Ltd. "Sharfocom SE-3 CK") to measure (7) film thickness using a micrometer (Aritsu Co., Ltd., trade name " K — 402B type "), the measurement is performed at 10 cm intervals in the film forming direction (MD) and wide direction (TD) of the film, and the thickness of the film is measured at 3,000 points in total. The average thickness 値 of the obtained film thickness at 3 00 was calculated to obtain the average film thickness t 0 (// m). Furthermore, using an electronic micrometer (manufactured by Anritsu Co., Ltd. under the trade name "K-312A"), a needle pressure of 30 g and a walking speed of 25 mm / second were used to determine the film formation direction (MD) and wide direction ( TD) covers each 2m length and is measured to obtain a continuous thickness chart. From this chart, read the maximum thickness U (// m) and the minimum thickness t2 (μ m). From the average thickness to (// m) of the film thus obtained, and The maximum thickness ti (// m) and the minimum thickness t2 (# m), the thickness difference D (%) is calculated according to the following formula (3). D = [(ti-t2) / t〇] χΙΟΟ ... ... (3) (8) Coefficient of dynamic friction (# d) -36- (34) (34) 200426934 Cut a film of 75mm (wide) χ 100mm (length) (sample ) Overlaid on two pieces, a weight of 200g is placed as the load W (g), the upper film slides at a speed of 150 mm / min, and the dynamic friction coefficient (# d) is calculated from the force Fd (g) during sliding Here, the film was measured at 25 ° C and 65% RH (relative humidity) for 24 hours.

動摩擦係數=Fd/W (9 )熱收縮率之差 於經設定溫度爲2 0 0 °C的烘箱內，按無緊張狀態保持 薄膜分鐘，在薄膜之製膜方向（MD)及寬幅方向（ TD )之各方向，從各個加熱處理前後的尺寸變化，與（1 )熱收縮率同樣，依下式（1 )算出熱收縮率S，以算出 兩方向之熱收縮率之差之絕對値： S=〔 L〇— L) /L〇〕χΙΟΟ ......... ( 1 ) 在此，分別表示 L〇 :熱處理前之標點間距離， L :熱處理後之標點間距離。 (1 〇 )密度 準照JIS C2151測定雙軸拉伸定向聚一 2，6〜蔡二甲 酸乙二酯薄膜之密度。 (]1 )吸水率 -37- (35) (35)200426934 準照JIS K7209，採用一邊爲50mm之正方形之基材 薄膜，於23 t之水中浸漬24小時後，測定薄膜之吸水 率。 (1 2 )尺寸安定性 採用25x25cm之基材薄膜，在65°C，85%RH之氣氛 中放置1 00小時後，測定4角落之捲曲狀態，以測定反撬 量（mm )之平均値。〇爲合格。 〇：10mm以下之反撬量 X: 10mm以上之反撬量 (1 3 )半導體晶圓之加工性（背面磨削及切割） 對各實施例及比較例之雙軸拉伸定向聚一 2，6—萘二 甲酸乙二酯薄膜上，按能成爲厚度14//m之方式塗佈丙 烯酸酯系黏著劑（正丁基丙烯酸酯與丙烯酸的共聚合物） ，以製作黏著片材。於所得黏著片材之黏著劑層上貼著8 吋矽晶圓，以分別實施晶圓之背面磨削及切割之試驗。另 外，在實施切割後，使用非擴張式模片接合器（die bonder )實施晶片之撿取。此時之切割、撿取之條件，爲 切割吃刀深度：從帶表面20 // m，頂上銷：4支，吸著夾 具之直徑：28mm0，筒夾（collet):角錐筒夾、頂上距 離：2mm、切割尺寸：8mmx/8mm。 (1 4 )半導體晶圓之加工性（背面磨削及帶剝離） -38- (36) (36)200426934 對各實施例及比較例之雙軸拉伸定向聚- 2，6 -萘二 甲酸乙二酯薄膜上，按能成爲厚度之方式塗佈丙 烯酸酯系黏著劑（正丁基丙烯酸酯與丙烯酸的共聚合物） ，以製作黏著片材。於所得的黏著片材之黏著劑層上貼著 8吋矽晶圓，以分別實施晶圓之背面磨削及帶剝離之試驗 。在此，試驗條件，爲背面磨削加工溫度：1 8 0 °C、帶剝 離前之熱處理溫度：150°C。 〔實施例1〕Coefficient of dynamic friction = Fd / W (9) The difference between the thermal shrinkage rate and the temperature of the film is maintained in the oven at a temperature of 200 ° C for ten minutes without tension. In the film forming direction (MD) and wide direction ( TD) in each direction, from the dimensional change before and after each heat treatment, the same as (1) the heat shrinkage rate, the heat shrinkage rate S is calculated according to the following formula (1) to calculate the absolute difference between the heat shrinkage rates in both directions: S = [L0—L) / L〇] χΙΟΟ ... (1) Here, L0: distance between punctuation points before heat treatment, and L: distance between punctuation points after heat treatment, respectively. (10) Density The density of the biaxially oriented poly (2,6 to ethylene dimethacrylate) film was measured in accordance with JIS C2151. () 1) Water absorption -37- (35) (35) 200426934 According to JIS K7209, a 50mm square substrate film was used, and after immersing in 23t of water for 24 hours, the water absorption of the film was measured. (1 2) Dimensional stability A 25x25cm base film was used. After being left in an atmosphere of 65 ° C and 85% RH for 100 hours, the curled state at the four corners was measured to determine the average backlash (mm). 〇 Passed. 〇: Anti-pry amount below 10mm X: Anti-pry amount above 10mm (1 3) Processability of semiconductor wafer (back grinding and dicing) The biaxially stretched orientation of each example and comparative example is gathered together. On the 6-naphthalene dicarboxylate film, an acrylate-based adhesive (copolymer of n-butyl acrylate and acrylic acid) was coated so as to have a thickness of 14 // m to make an adhesive sheet. An 8-inch silicon wafer was affixed to the adhesive layer of the obtained adhesive sheet to perform experiments on the backside grinding and dicing of the wafer, respectively. In addition, after the dicing is performed, a wafer is picked up using a non-expandable die bonder. The cutting and picking conditions at this time are the cutting depth of the knife: 20 // m from the surface of the belt, the top pin: 4 pieces, the diameter of the suction clamp: 28mm0, collet: angle collet, top distance : 2mm, cutting size: 8mmx / 8mm. (1 4) Processability of semiconductor wafer (back surface grinding and stripping) -38- (36) (36) 200426934 Biaxially stretched oriented poly-2,6-naphthalene dicarboxylic acid for each example and comparative example An acrylate-based adhesive (copolymer of n-butyl acrylate and acrylic acid) is coated on the ethylene glycol film so as to have a thickness to make an adhesive sheet. An 8-inch silicon wafer was affixed to the adhesive layer of the obtained adhesive sheet to perform experiments on the backside grinding and peeling of the wafer, respectively. Here, the test conditions are the back grinding temperature: 180 ° C, and the heat treatment temperature before stripping: 150 ° C. [Example 1]

於2，6 —萘二甲酸二甲酯1〇〇份與乙二醇60份之混 合物中添加乙酸錳，4結晶水鹽〇.〇3份，在從150°C徐徐 升溫至240 °C之下實施酯交換反應。在此當中，當反應溫 度到達170°C時添加二氧化銻〇·〇24份，再添加平均粒徑 0.4 // m、粒徑比1 · 1之球狀氧化矽粒子〇 · 2重量％。並且 ，當反應溫度到達220 °C時添加3，5_二羧基苯磺酸四丁 基鱗鹽0.042份（相當於2毫莫耳％ )。然後，繼續實施 酯交換反應，並於酯交換反應完成後，添加磷酸三甲酯 0.023份。接著，將反應生成物移至聚合反應器中並升溫 至290°C，於〇.2mmHg (水銀）柱以下之高真空下實施聚 縮合反應，製得以25 °C之鄰氯酚溶液所測定的特性黏度 爲0.62dl/g之聚—2，6—萘二甲酸乙二酯聚合物（簡稱爲 「聚合物C」）。將此聚合物在1 70°C下乾燥6小時後供 給擠壓機，在熔融溫度3 0 5 °C下加以熔融，經過開度1mm 之縫口狀模頸，擠出於表面精加工0.3S，表面溫度50°C -39- (37) (37)200426934 之旋轉輥筒上以製得未拉伸薄膜。 將如此所得未拉伸薄膜，在1 45 t下往縱方向（製膜 方向）拉伸3 · 3倍，接著，在1 4 0 °C下往橫方向（寬幅方 向）拉伸3.4倍，再在243 °C下熱固定處理5秒鐘及使其 往寬幅方向收縮5% (toe - in)，並將厚度16// m，特性 黏度0.52dl/g之雙軸拉伸定向PEN薄膜捲取爲1 5 00mm 寬幅而3 00m之輥狀。然後，將所得的雙軸拉伸定向PEN 薄膜在經過上方所設置的夾輥並因自重而往下方下垂之下 ，在其當中使用紅外線加熱裝置加熱爲薄膜溫度能成爲 225 t之方式之後，被位在較上方所設置的輥輪爲4m下 方的夾輥所冷卻之下改變方向爲水平方向，使用夾輥將捲 取張力遮斷後捲取，以實施鬆弛熱處理。鬆弛係在上方之 夾輥與實施捲取張力之遮斷的夾輥間的速度賦與差別之方 式所進行者。 將如此所得的鬆弛熱處理後之雙軸拉伸定向PEN薄 膜作爲實施例1。 將所得實施例1之薄膜之特性評價結果表示於表1中 。實施例1之薄膜之晶圓加工性而言’並未發生因薄膜之 熱尺寸變化，薄膜之厚度分佈差或薄膜之平面性等所引起 的模片接合器裝置之誤動作所致的不良情況，而能實現良 好的撿取操作。又，不致於污染黏著層塗設過程內及半導 體晶圓加工過程內，又，在帶剝離時並未發生薄膜破裂而 在半導體晶圓之製造上的加工性爲良好者。 -40- (38) (38)200426934 〔實施例2〕 除將縱方向之拉伸倍率作成2 · 9倍，橫方向之拉伸倍 率變更爲3 · 1倍，且未實施下垂式之鬆驰熱處理以外，其 餘則重複與實施例1同樣的操作，製得厚度7 5 // m之雙 軸拉伸定向PEN薄膜。 將所得實施例2之薄膜之特性評價結果表示於表1中 。實施例2之薄膜之晶圓加工性而言，不會發生因薄膜之 熱尺寸變化，因薄膜之厚度分佈差或薄膜之平面性等所引 起的模片接合器裝置之誤動作所致的不良情況，而能實現 良好的撿取操作。又，不致於污染黏著劑層塗設過程內及 半導體晶圓加工過程內，又，在帶剝離時並未曾發生薄膜 破裂而在半導體晶圓之製造上的加工性爲良好者。 〔實施例3〕 實施例3中，按下述方法製作2層構成之薄膜。首先 ，於2，6 —萘二甲酸二甲酯100份與乙二醇60份之混合 物中添加乙酸錳· 4結晶水鹽0.03份，在從150°C徐徐升 溫至24 0 °C之下實施酯交換反應。在此當中，當反應溫度 到達1 70 °C時添加三氧化銻0.024份，再添加平均粒徑 0.5 // m之碳酸鈣粒子0.15重量％。並且，當反應溫度到 達22 0 °C時添加3，5-二羧基苯磺酸四丁基鱗鹽0.042份 (相當於2毫莫耳％ )。然後，繼續實施酯交換反應，並 於酯交換反應完成後，添加磷酸三甲酯0.023份。接著， 將反應生成物移至聚合反應器中並升溫至290 °C ，於 -41 · (39) (39)200426934 〇.2mmHg柱以下之高真空下實施聚縮反應，製得以25°C 之鄰氯酣ί谷液所測定的特性黏度爲0.6 3 d 1 / g之聚一 2，6 -萘二甲酸乙二酯聚合物（簡稱爲「聚合物A」）。 又，與聚合物A同樣方式實施酯交換反應，除作爲 聚合觸媒添加非晶性二氧化鍺0.02份，再添加平均粒徑 0 · 1 // m，粒徑比1 . 1之球狀二氧矽粒子〇 . 〇 5重量％以外， 其餘則與聚合物A同樣方式實施聚合，製得以2 5 °C之鄰 氯酚溶液所測定的特性黏度爲0.63 dl/g之聚一 2，6 —萘二 甲酸乙二酯聚合物（簡稱爲「聚合物B」）。 將此等聚合物分別在1 7 0 °C下乾燥6小時後，供給分 別2台之擠壓機，分別在熔融溫度3 0(TC下加以熔融，依 共擠壓法經過開度1 mm之縫口狀模頭，擠出於表面精加 工0 · 3 S ’表面溫度5 0 °C之旋轉輥筒上以製得2層構成之 未拉伸薄膜。將此未拉伸薄膜，按與實施例1同樣方式逐 次加以雙軸拉伸，並實施熱固定，將薄膜厚度16//m (聚 合物A層側1 〇 // m/聚合物B層側6 // m )，特性黏度 0.54dl/g之雙軸拉伸定向PEN薄膜捲取爲1 500mm寬幅而 3 000m之輥狀。然後，按與實施例1同樣方式將所得的雙 軸拉伸定向PEN薄膜使用同樣下垂式之鬆弛熱處理裝置 ，以實施鬆弛熱處理。將如此所得鬆弛熱處理後之雙軸拉 伸定向PEN薄膜作爲實施例3。 將所得實施例3之薄膜之特性評價結果表示於表1中 。此等實施例薄膜之晶圓加工性而言，並未特別發生因薄 膜之熱尺寸變化、薄膜厚度分佈差或薄膜之平面性等等戶斤 -42- (40) (40)200426934 引起的模片接合器裝置之誤動作所致的不良情況，而能實 現良好的撿取操作。又，不致於污染黏著層塗設過程內及 半導體晶圓加工過程內，又，在帶剝離時並未發生薄膜破 裂而在半導體晶圓之製造上的加工性爲良好者。 〔比較例1〕 使用東麗·杜邦製「卡布通型H」之50//m薄膜。 將薄膜之特性評價結果表示於表1中。雖然薄膜之熱 尺寸變化非常優異，惟由於吸水率高之故，在高濕度下則 爲尺寸安定性差劣者。 〔比較例2〕 於對苯二甲酸二甲酯100份與乙二醇60份之混合物 中添加乙酸錳· 4結晶水鹽0.03份，在從150°C徐徐升溫 至240°C之下實施酯交換反應。在此當中，當反應溫度到 達170°C時添加三氧化銻0.024份，再添加平均粒徑0.4 // m，例粒比1 . 1之球狀氧化矽粒子0.2重量％。並且，當 反應溫度到達2 2 0 °C時添加3，5 -二羧基苯磺酸四丁基鳞 鹽0.042份（相當於2毫莫耳）。然後，繼續實施酯交換 反應，並於酯交換反應完成後，添加磷酸三甲酯0.023份 。接著，將反應生成物移至聚合反應器中並升溫至290 °C ’於0.2mmHg柱以下之高真空下實施聚縮合反應，製得 以25°C之鄰氣酚溶液所測定的特性黏度爲〇.62dl/g之聚 對苯二甲酸乙二酯聚合物。將此聚合物在170°C下乾燥3 -43- (41) (41)200426934 小時後供給擠壓機，在熔融溫度290 °C下加以熔融，經過 開度1 mm之縫口狀模頭，擠出於表面精加工〇. 3 S，表面 溫度25 °C之旋轉輥筒上以製得未拉伸薄膜。 將如此所得未拉伸薄膜，在90 °C下往縱方向（製膜 方向）拉伸3.2倍，接著，在120°C下往橫方向（寬幅方 向）拉伸3 · 8倍，再在2 1 0 °C下熱固定處理5秒鐘及使其 往寬幅方向收縮5% ( toe - in)，並將厚度16// m，特性 黏度0.5 5dl/g之雙軸拉伸定向聚對苯二甲酸乙二酯薄膜捲 取爲1 5 00mm寬幅而3 000m之輥狀。然後，將所得的雙軸 拉伸定向聚對二甲酸乙二酯薄膜在經過上方所設置的夾輥 並因自重而往下方下垂之下，在其當中使用紅外線加熱裝 置加熱爲薄膜溫度能成爲180°C之方式之後，被位在較上 方所設置的輥輪爲4m下方的夾輥所冷卻之下改變方向爲 水平方向，使用夾輥將捲取張力遮斷後捲取，以實施鬆弛 熱處理。鬆弛係在上方之夾輥與實施捲取張力之遮斷的夾 輥間的速度賦與差別之方式所進行者。 將如此所得的鬆弛熱處理後之雙軸拉伸定向聚對苯二 甲酸乙二酯薄膜作爲比較例2。 將所得比較例2之薄膜之特性評價結果表示於表1中 。就晶圓加工性而言，由於薄膜之尺寸安定性之惡化之故 ，發生晶片之位置錯移等，結果因模片接合器裝置之誤動 作所引起的不良情況。又，低聚合物析出量係會污染黏著 層設過程內及半導體晶圓過程內的程度。又，對加熱後之 薄膜表面的低聚合物析出率亦高。 -44- (42) 200426934 〔比較例3〕 比較例3中，除將縱方向之拉伸倍率作成3.6倍 將橫方向之拉伸倍率變更爲3.7倍以外，其餘則重複 施例2同樣的操作，製得厚度 5 0 // m之雙軸拉伸 PEN薄膜。 將所得的比較例3之特性評價結果表示於表1中 膜之熱尺寸變化在薄膜縱方向及橫方向均超過1.00% 晶圓加工性而言，發生有晶片之位置錯移動，結果發 模片接合器裝置之誤動作所引起的不良情況。 〔比較例4〕 比較例4中，除將縱方向之拉伸倍率作成3.6倍 將橫方向之拉伸倍率變更爲3 · 9倍以外，其餘則重複 施例1同樣的操作，並實施下垂式之鬆弛熱處理，製 度20//m之雙軸拉伸定向PEN薄膜。 將所得的比較例4之特性評價結果表示於表1中 膜之熱尺寸變化在薄膜縱方向超過1·〇〇%，就晶圓加 而言，發生有晶片之位置錯移等，結果發生因模片接 裝置之誤動作所引起的不良情況。 ，而 與實 定向 。薄 ，就 生因 ，而 與實 得厚 。薄 工性 合器 -45- 200426934 比較例4 1_ |單層 聚合物C I球狀氧化矽1 〇 0.20 rn ON rn ο <Ν 225 0.52 ο <Ν 寸 ο 0.30 6400 7000 r-H 1.358 1 1 1 1 不良 1不良| 比較例3 單層 1聚合物cH I球狀氧化矽1 寸 〇 0.20 ΓΠ F—< r- ΓΠ ο CN 無處理 0.52 Ο wn ν〇 ο r—^ 〇 CN 6500 6600 v〇 1.357 1 1 1 1 不良 I不良| 比較例2 單層 1 球狀氧化矽 寸· 〇 0.20 <Ν rn g oo rn 宕 f < 210 g 0.55 νο OO 0.60 0.10 5300 5250 00 1 rn X 〇 X 不良 i 不良 比較例1 單層 1 1 1 1 I 1 1 1 1 1 1 ο 1 0.20 0.10 | 3700 | | 3700 | 1 1 1 1 rn τ—^ X | 實施例3 (N I聚合物B1 碳酸鈣 1—^ 〇 | 0.05 | m m 对 rn ο m 225 0.54 Ό oo 0.50 0.05 6100 6200 寸 1.360 cn o 〇 rn 〇 〇 n^ I聚合物a| 碳酸鈣 wn 〇 | 0.15 | ON 實施例2 單層 聚合物c 球狀氧化矽 寸 〇 0.20 ON csi * ( rn ο CN 無處理 0.52 0.80 0.30 5600 5800 Ό 1.362 wn 〇 ο rn ο 〇 {3¾ 實施例1 :單層 I聚合物c | 球狀氧化矽 寸 〇 0.20 m ΠΊ 对 寸 rn ο Η m 225 0.52 νο oo 0.50 0.05 6100 6200 ·—Η 1 1.360 I 寸 o 〇 m ο 〇 層構成 聚合物 種類 ! 重量％ P Ρ P P βΠΛ MPa MPa nm g/cm 重量％ 1 半導體晶圓之加工性(背面磨削及切割） 半導體晶圓之加工性(背面磨削及帶剝離） 粒徑 i添加量 倍率 溫度 1倍率1 溫度 趟 Eg 下垂式鬆熱處理溫度 iiEf? 薄膜厚度 厚度之分佈差 1 縱(md) I 橫(TD) 1 I 縱(md) 1 1 橫(td) 1 表面粗糙度 密度 低聚合物萃取量 加熱低聚合物析出率 吸水率 尺寸安定性 添加粒子 縱拉伸 橫拉伸 m 画 熱收縮率 楊氏撓曲模量 (44) (44)200426934 〔實施例4〕 於2，6 —萘二甲酸乙二酯100倍與乙二醇60份之混 合物中添加乙酸錳· 4結晶水鹽〇 · 〇 3份，在從1 5 0 °C徐徐 升溫至240 °C之下實施酯交換反應。在此當中，當反應溫 度到達1 7 0 °C時添加三氧化銻〇 . 0 2 4份，再添加平均粒徑 0 · 6 // m，粒徑比1 · 1之球狀氧化矽粒子〇 . 1重量％。並且 ，當反應溫度到達220 °C時添加3，5-二羧基苯磺酸四丁 基鱗鹽0.042份（相當於2毫莫耳％)。然後，繼續實施 酯交換反應，並於酯交換反應完成後，添加磷酸三甲酯 0.023份。接著，將反應生成物移至聚合反應器中並升溫 至2 9(TC，於〇.2mmHg柱以下之高真空下實施聚縮合反應 ，製得以25°C之鄰氯酚溶液所測定的特性黏度爲0.43dl/g 之聚一 2，6—萘二甲酸乙二酯聚合物（簡稱「聚合物D」 )及特性黏性爲〇.69dl/g之聚一 2，6-萘二甲酸乙二酯聚 合物（簡稱「聚合物E」）。再將聚合物E加以固相聚合 ，作成特性黏度爲〇.7 8dl/g (聚合物F)。 將聚合物E在1 70 °C下乾燥6小時後供給擠壓機，在 熔融溫度3 05 °C下加以熔融，經過開度1 mm之縫口狀模 頭，擠出於表面精加工〇 . 3 S，表面溫度5 0 °C之旋轉輥筒 上以製得未拉伸薄膜。 將如此所得未拉伸薄膜，在1 45 °C下往縱方向（製膜 方向）拉伸3.0倍，接著，在14 0 °C下往橫方向（寬幅方 向）拉伸3.0倍，再在246 °C下熱固定處理5秒鐘及使其 往寬幅方向收縮4% (toe - in)，並將厚度30m，特性黏 -47- (45) (45)200426934 度0.59dl/g之雙軸拉伸定向PEN薄膜捲取爲1 5 00mm寬 幅而 3 00 0m之輥狀。然後，將所得的雙軸拉伸定向PEN 薄膜在經過上方所設置的夾輥並因自重而往下方下垂之下 ，在其當中使用紅外線加熱裝置加熱爲薄膜溫度能成爲 22 5 °C之方式之後，被位在較上方所設置的輥輪爲4m下 方的夾輥所冷卻之下改變方向爲水平方向，使用夾輥將捲 取張力遮斷後捲取，以實施鬆弛熱處理。鬆弛係在上方之 夾輥與實施捲取張力之遮斷的夾輥間的速度賦與差別之方 式所進行者。 將如此所得的鬆弛熱處理後之雙軸拉伸定向PEN薄 膜作爲實施例4。 將所得實施例4之薄膜之特性評價結果表示於表2中 。實施例4之薄膜之晶圓加工性而言，並未發生因薄膜之 熱尺寸變化、薄膜之厚度分佈差或薄膜之平面性等所引起 的模片接合器裝置之誤動作所致的不良情況，而能實現良 好的撿取操作。又，不致於污染黏著層塗設過程內及半導 體晶圓加工過程內，又，在帶剝離時並未發生薄膜破裂而 在半導體晶圓之製造上的加工性爲良好者。 〔實施例5〕 除在實施例4中的聚合物F以外，其餘則重複與實施 例4同樣的操作，製得厚度50 // m之雙軸拉伸定向PEN 薄膜。將如此所得雙軸拉伸定向PEN薄膜作爲實施例5。 將所得實施例5之薄膜之特性評價結果表示於表2中 -48- (46) (46)200426934 。實施例5之薄膜之晶圓加工性而言’並未發生因薄膜之 熱尺寸變化、薄膜之厚度分佈差或薄膜之平面性等所引起 的模片接合器裝置之誤動作所致的不良情況，而能實施良 好的撿取操作。又’不致於污染黏著層塗設過程內及半導 體晶圓加工過程內，又，在帶剝離時並未發生薄膜破裂而 在半導體晶圓之製造上的加工性爲良好者。 〔實施例6〕 除將實施例4中作成在145 °C下往縱方向拉伸3.3倍 ，接著，在1 4 0 °C下往橫方向拉伸3 · 3倍以外，其餘則重 複與實施例4同樣的操作，製得厚度3 0 # m之雙軸拉伸 定向PEN薄膜。將如此所得雙軸拉伸定向PEN薄膜作爲 實施例6。 將所得實施例6之薄膜之特性評價結果表示於表2中 。實施例6之薄膜之晶圓加工性而言，並未發生因薄膜尺 寸變化、薄膜之厚度分佈差或薄膜之平面性等所引起的模 片接合器裝置之誤動作所致的不良情況，而能實施良好的 撿取操作。又’不致於污染黏著層塗設過程內及半導體晶 圓加工過程內’又，在帶剝離時並未發生薄膜破裂而在半 導體晶圓之製造上的加工性爲良好者。 〔實施例7〕 除在實施例4中使用聚合物D以外，其餘則重覆與 實施例4同樣的操作，製得厚度5 〇 # m之雙軸拉伸定向 -49- (47) (47)200426934 PEN薄膜。將如此所得的雙軸拉伸定向pen薄膜作爲實 施例7。 將所得實施例7之薄膜之特性評價結果表示於表2中 。晶圓加工性而言，並未發生因薄膜尺寸變化、薄膜之厚 度分佈差或薄膜之平面性等所引起的模片接合器裝置之誤 動作所致的不良情況，而能實施良好的撿取操作。另一方 面，發生有因對薄膜表面的低聚合物析出所引起的過程內 污染。 〔實施例8〕 除在實施例6中薄膜所含的不活性粒子之量作成〇. 〇 1 重量％，再將熱固定溫度作成23 3 °C以外，其則重覆與實 施例6同樣的操作，製得厚度3 0 // m之雙軸拉伸定向 PEN薄膜。將如此所得的雙軸拉伸定向PEN薄膜作爲實 施例8。 將所得實施例8之薄膜之特性評價結果表示於表2中 。晶圓加工性而言，雖然薄膜之熱尺寸變化小，由於縱方 向及橫方向之熱收縮率之差超過所期望之範圍之故，在半 導體晶圓之製造上安定性方面有若干問題。 〔實施例9〕 除實施例4中在145t下往縱方向拉伸2.7倍，接著 ，在140 °C下往橫方向拉伸2.7倍以外，其餘則重複與實 施例4同樣的操作，製得厚度3 0 // m之雙軸拉伸定向 -50- (48) (48)200426934 PEN薄膜。將如此所得的雙軸拉伸定向PEN薄膜作爲實 施例9。 將所得實施例9之薄膜之特性評價結果表示於表2中 。晶圓加工性而言，雖然薄膜之熱尺寸變化小，惟薄膜厚 度方向之折射率高，發生有因薄膜之切屑等所引起的過程 內污染或帶剝離時之薄膜破裂。To a mixture of 100 parts of dimethyl 2,6-naphthalate and 60 parts of ethylene glycol was added manganese acetate, 0.03 parts of 4 crystal water salts, and the temperature was gradually raised from 150 ° C to 240 ° C. The transesterification reaction was performed next. Among them, when the reaction temperature reached 170 ° C, 0.024 parts of antimony dioxide was added, and spherical silica particles having an average particle diameter of 0.4 // m and a particle size ratio of 1.1 were added to 0.2% by weight. In addition, when the reaction temperature reached 220 ° C, 0.042 parts of 3,5-dicarboxybenzenesulfonic acid tetrabutyl scale salt was added (equivalent to 2 millimoles%). Then, the transesterification reaction was continued. After the transesterification reaction was completed, 0.023 parts of trimethyl phosphate was added. Next, the reaction product was transferred to a polymerization reactor and heated to 290 ° C, and a polycondensation reaction was performed under a high vacuum below 0.2 mmHg (mercury) column to prepare an o-chlorophenol solution at 25 ° C. Poly-2,6-naphthalene dicarboxylate polymer with an intrinsic viscosity of 0.62 dl / g (referred to as "Polymer C"). The polymer was dried at 1 70 ° C for 6 hours, and then supplied to an extruder. The polymer was melted at a melting temperature of 30 ° C. After passing through a slit-shaped die neck with an opening of 1mm, it was extruded on the surface for 0.3S. , Surface temperature 50 ° C -39- (37) (37) 200426934 on a rotating roller to make an unstretched film. The unstretched film thus obtained was stretched 3 · 3 times in the longitudinal direction (film forming direction) at 1 45 t, and then stretched 3.4 times in the transverse direction (wide direction) at 140 ° C. It was then heat-fixed at 243 ° C for 5 seconds and contracted by 5% (toe-in) in the wide direction, and the biaxially stretched oriented PEN film with a thickness of 16 // m and an intrinsic viscosity of 0.52dl / g Take up a roll shape of 1500mm wide and 3,000m. Then, the obtained biaxially oriented PEN film passed through a nip roller provided above and drooped downward due to its own weight, and was heated in such a manner that the film temperature became 225 t by using an infrared heating device. The upper roller is set to a horizontal direction under the cooling of the nip roller below 4m, and the nip roller is used to block the winding tension and then take up the coil to perform relaxation heat treatment. The slackening is performed by a method of imparting a difference in speed between the upper nip roller and the nip roller that interrupts the take-up tension. The thus obtained biaxially oriented PEN film after the relaxation heat treatment was used as Example 1. The characteristic evaluation results of the obtained film of Example 1 are shown in Table 1. In terms of the wafer processability of the thin film of Example 1, there were no problems caused by the malfunction of the die bonder device caused by the thermal dimensional change of the thin film, the poor thickness distribution of the thin film, or the flatness of the thin film. And can achieve a good picking operation. In addition, it does not cause contamination during the coating process of the adhesive layer or during the processing of the semiconductor wafer, and no film breakage occurs when the tape is peeled off, and the processability in the manufacture of the semiconductor wafer is good. -40- (38) (38) 200426934 [Example 2] Except that the stretching ratio in the longitudinal direction was made 2 · 9 times, the stretching ratio in the transverse direction was changed to 3 · 1 times, and the sagging relaxation was not implemented. Except for the heat treatment, the rest were repeated the same operation as in Example 1 to obtain a biaxially oriented PEN film with a thickness of 7 5 // m. The characteristic evaluation results of the obtained film of Example 2 are shown in Table 1. In terms of the wafer processability of the film of Example 2, there will be no defects caused by the malfunction of the die bonder device caused by the thermal dimensional change of the film, the poor thickness distribution of the film, or the flatness of the film. , And can achieve a good picking operation. In addition, it does not cause contamination during the coating process of the adhesive layer or during the processing of the semiconductor wafer, and there is no film breakage during the peeling of the tape, and the processability in the manufacture of the semiconductor wafer is good. [Example 3] In Example 3, a thin film having a two-layer structure was produced by the following method. First, 0.03 part of manganese acetate · 4 crystal water salt was added to a mixture of 100 parts of dimethyl 2,6-naphthalate and 60 parts of ethylene glycol, and the temperature was gradually increased from 150 ° C to 24 0 ° C. Transesterification. Among them, when the reaction temperature reached 1 70 ° C, 0.024 parts of antimony trioxide was added, and 0.15% by weight of calcium carbonate particles having an average particle diameter of 0.5 // m was added. When the reaction temperature reached 22 ° C, 0.042 parts of 3,5-dicarboxybenzenesulfonic acid tetrabutylscale salt was added (equivalent to 2 millimoles%). Then, the transesterification reaction was continued, and after the transesterification reaction was completed, 0.023 parts of trimethyl phosphate was added. Next, the reaction product was transferred to a polymerization reactor and heated to 290 ° C, and a polycondensation reaction was performed under a high vacuum of -41 · (39) (39) 200426934 0.2 mmHg column to obtain a temperature of 25 ° C. The measured intrinsic viscosity of o-chloropyrene grain solution is 0.6 3 d 1 / g of poly 2,6-naphthalene dicarboxylate polymer (referred to as "Polymer A"). In addition, a transesterification reaction was performed in the same manner as the polymer A, except that 0.02 parts of amorphous germanium dioxide was added as a polymerization catalyst, and spherical particles having an average particle diameter of 0 · 1 // m and a particle diameter ratio of 1.1 were added. Except for oxysilicone particles of 0.05% by weight, the others were polymerized in the same manner as Polymer A to prepare an orthochlorophenol solution at 25 ° C, which had an intrinsic viscosity of 0.63 dl / g. Ethylene naphthalate polymer (referred to as "Polymer B"). After drying these polymers at 170 ° C for 6 hours, they were supplied to two extruders and melted at a melting temperature of 30 ° C and passed through a co-extrusion method with an opening of 1 mm. A slit-shaped die is extruded on a rotating roller with a surface finishing of 0 · 3 S 'and a surface temperature of 50 ° C to obtain a two-layer unstretched film. Example 1 Biaxial stretching was performed successively in the same manner, and thermal fixation was performed. The film thickness was 16 // m (Polymer A layer side 10 // m / Polymer B layer side 6 // m), and the intrinsic viscosity was 0.54dl. / g of the biaxially stretched oriented PEN film was wound into a roll shape having a width of 1,500 mm and a width of 3,000 m. Then, the obtained biaxially stretched oriented PEN film was subjected to the same sagging relaxation heat treatment in the same manner as in Example 1. The device was used to perform relaxation heat treatment. The biaxially stretched oriented PEN film obtained in this way after relaxation heat treatment was used as Example 3. The results of the characteristic evaluation of the obtained film of Example 3 are shown in Table 1. The crystals of these example films In terms of circular processability, the thermal dimensional change of the film and the poor film thickness distribution did not occur. Or the flatness of the film, etc. The bad situation caused by the malfunction of the die adapter device caused by the household weight -42- (40) (40) 200426934 can achieve a good picking operation. Also, it will not contaminate the adhesive layer During the coating process and during the semiconductor wafer processing, film breakage did not occur at the time of tape peeling, and the processability in the manufacture of semiconductor wafers was good. [Comparative Example 1] Using Toray DuPont " 50 // m film of Capton type H ". The properties of the film are shown in Table 1. Although the thermal dimensional change of the film is very good, it is dimensionally stable under high humidity due to its high water absorption. Poor performance. [Comparative Example 2] To a mixture of 100 parts of dimethyl terephthalate and 60 parts of ethylene glycol, 0.03 part of manganese acetate · 4 crystal water salt was added, and the temperature was gradually raised from 150 ° C to 240 ° C. The transesterification reaction is carried out below. Among them, when the reaction temperature reaches 170 ° C, 0.024 parts of antimony trioxide is added, and then an average particle size of 0.4 // m is added, and the spherical silica particles with a particle ratio of 1.1 are 0.2 weight. %. And when the reaction temperature reaches 2 2 0 ° C, add 3 0.042 parts of tetrabutyl 5-dicarboxybenzenesulfonic acid scale salt (equivalent to 2 millimoles). Then, the transesterification reaction was continued, and after the transesterification reaction was completed, 0.023 parts of trimethyl phosphate was added. Next, The reaction product was transferred to a polymerization reactor and heated to 290 ° C. The polycondensation reaction was performed under a high vacuum below 0.2 mmHg column, and the intrinsic viscosity measured by the o-phenol solution at 25 ° C was 0.62 dl. / g of polyethylene terephthalate polymer. This polymer was dried at 170 ° C for 3 -43- (41) (41) 200426934 hours, then supplied to the extruder, and was added at a melting temperature of 290 ° C. It was melted and passed through a slit-shaped die with an opening of 1 mm and extruded on a rotating roller with a surface finishing of 0.3 S and a surface temperature of 25 ° C to obtain an unstretched film. The thus-obtained unstretched film was stretched 3.2 times in the longitudinal direction (film-forming direction) at 90 ° C, and then stretched 3 · 8 times in the transverse direction (wide direction) at 120 ° C. 2 10 ° C heat-fixing for 5 seconds and shrinking 5% (toe-in) in the wide direction, and biaxially stretched oriented pairs with a thickness of 16 // m and an intrinsic viscosity of 0.5 5dl / g The ethylene phthalate film is wound into a roll shape with a width of 1,500 mm and a width of 3,000 m. Then, the obtained biaxially stretched oriented polyethylene terephthalate film passed through a nip roller provided above and drooped down due to its own weight, and was heated by using an infrared heating device so that the film temperature became 180. After the method of ° C, the direction of the horizontal direction is changed under the condition of being cooled by the nip roller located above the 4m below the roller. The nip roller is used to cut off the winding tension and then coiled to perform relaxation heat treatment. The relaxation is performed by a method of imparting a difference in speed between the upper nip roller and the nip roller that is interrupted by the take-up tension. The thus obtained biaxially stretched oriented polyethylene terephthalate film after the relaxation heat treatment was used as Comparative Example 2. The characteristic evaluation results of the obtained film of Comparative Example 2 are shown in Table 1. In terms of wafer processability, due to the deterioration of the dimensional stability of the film, positional shifts of the wafer, etc. occur, and as a result, malfunctions caused by the erroneous operation of the die bonder device. In addition, the amount of low polymer precipitation will pollute the adhesion layer and the semiconductor wafer. The low polymer precipitation rate on the surface of the film after heating is also high. -44- (42) 200426934 [Comparative Example 3] In Comparative Example 3, the same operation as in Example 2 was repeated except that the stretching ratio in the longitudinal direction was 3.6 times and the stretching ratio in the horizontal direction was changed to 3.7 times. To produce a biaxially stretched PEN film with a thickness of 50 / m. The obtained characteristic evaluation results of Comparative Example 3 are shown in Table 1. The thermal dimensional change of the film exceeded 1.00% in both the longitudinal and transverse directions of the film. In terms of wafer processability, the wafer was misaligned, and the result was a die. Adverse conditions caused by malfunction of the adapter device. [Comparative Example 4] In Comparative Example 4, except that the stretching ratio in the longitudinal direction was changed to 3.6 times and the stretching ratio in the transverse direction was changed to 3 · 9 times, the same operation as in Example 1 was repeated, and a drooping method was performed. The relaxation heat treatment is a biaxially oriented PEN film with a system of 20 // m. The obtained characteristic evaluation results of Comparative Example 4 are shown in Table 1. The thermal dimensional change of the film exceeded 1,000% in the longitudinal direction of the film. In the case of wafer addition, the positional shift of the wafer occurred, and the result occurred. Bad conditions caused by the malfunction of the die bonding device. , And and real orientation. The thinner is the cause, but the thicker is the truth. Thin work coupler-45- 200426934 Comparative Example 4 1_ | Single-layer polymer CI spherical silica 1 〇0.20 rn ON rn ο < N 225 0.52 ο < N inch ο 0.30 6400 7000 rH 1.358 1 1 1 1 Bad 1 Bad | Comparative Example 3 Monolayer 1 polymer cH I spherical silica 1 inch 〇0.20 ΓΠ F— < r- ΓΠ ο CN No treatment 0.52 〇 wn ν〇ο r— ^ 〇CN 6500 6600 v〇1.357 1 1 1 1 Defective I Defective | Comparative Example 2 Single-layer 1 Spherical silicon oxide inch 〇0.20 < N rn g oo rn ff < 210 g 0.55 νο OO 0.60 0.10 5300 5250 00 1 rn X 〇X Defective i Poor Comparative Example 1 Monolayer 1 1 1 1 I 1 1 1 1 1 1 1 ο 1 0.20 0.10 | 3700 | | 3700 | 1 1 1 1 rn τ — ^ X | Example 3 (NI polymer B1 calcium carbonate 1 — ^ 〇 | 0.05 | mm to rn ο m 225 0.54 Ό oo 0.50 0.05 6100 6200 inch 1.360 cn o 〇rn 〇〇n ^ I polymer a | calcium carbonate wn 〇 | 0.15 | ON Example 2 Monolayer polymer c spherical Silicon oxide 〇0.20 ON csi * (rn ο CN without treatment 0.52 0.80 0.30 5600 5800 Ό 1.362 wn 〇ο rn ο 〇 {3¾ Example 1: single-layer I polymer c | spherical oxidation Silicon inch 〇0.20 m ΠΊ Pair inch rn ο Η m 225 0.52 νο oo 0.50 0.05 6100 6200 · Η 1 1.360 I inch o 〇m ο 〇 Layers constitute polymer types! Weight% P PP PP βΠΛ MPa MPa nm g / cm % By weight 1 Processability of semiconductor wafer (back surface grinding and dicing) Processability of semiconductor wafer (back surface grinding and stripping) Particle size i Addition rate magnification temperature 1 magnification 1 Temperature trip Eg Drooping loose heat treatment temperature iiEf? Film thickness thickness distribution difference 1 vertical (md) I horizontal (TD) 1 I vertical (md) 1 1 horizontal (td) 1 surface roughness density low polymer extraction volume heating low polymer precipitation rate water absorption size stability addition The particles are longitudinally stretched and transversely stretched. M The heat shrinkage rate is shown. Young's flexural modulus (44) (44) 200426934 [Example 4] 100 times of 2,6-naphthalene dicarboxylate and 60 parts of ethylene glycol. To the mixture, 0.03 parts of manganese acetate · 4 crystal water salt was added, and a transesterification reaction was carried out under a temperature gradually rising from 150 ° C to 240 ° C. Among them, when the reaction temperature reached 170 ° C, antimony trioxide 0.04 was added, and then spherical silica particles with an average particle diameter of 0 · 6 // m and a particle size ratio of 1.1 were added. 1% by weight. In addition, when the reaction temperature reached 220 ° C, 0.042 parts of 3,5-dicarboxybenzenesulfonic acid tetrabutyl scale salt was added (equivalent to 2 millimoles%). Then, the transesterification reaction was continued. After the transesterification reaction was completed, 0.023 parts of trimethyl phosphate was added. Next, the reaction product was moved to a polymerization reactor and the temperature was raised to 29 ° C., and a polycondensation reaction was performed under a high vacuum below 0.2 mmHg column to prepare an intrinsic viscosity measured by an o-chlorophenol solution at 25 ° C. Poly-2,6-naphthalene dicarboxylate polymer (referred to as "Polymer D") at 0.43 dl / g and poly-2,6-naphthalene dicarboxylate with intrinsic viscosity of 0.69 dl / g Ester polymer (referred to as "Polymer E"). Polymer E was solid-phase polymerized to produce an intrinsic viscosity of 0.7 8 dl / g (Polymer F). Polymer E was dried at 1 70 ° C. 6 After an hour, it was supplied to the extruder, and melted at a melting temperature of 3 05 ° C. After passing through a slit-shaped die with an opening of 1 mm, it was extruded on a surface to finish 0.3 S and a surface roller of 50 ° C. An unstretched film was prepared on a cylinder. The thus-obtained unstretched film was stretched 3.0 times in the longitudinal direction (film-forming direction) at 1 45 ° C, and then transversely (wide in width at 14 0 ° C). Width direction) stretched 3.0 times, and then heat-fixed at 246 ° C for 5 seconds and shrink 4% (toe-in) in the wide direction, and the thickness is 30m, and the characteristic viscosity is -47- (45) ( 4 5) 200426934 0.59 dl / g biaxially stretched oriented PEN film is wound into a roll shape of 1 500 mm wide and 3 00 m. Then, the obtained biaxially stretched oriented PEN film is set above the The nip rolls sag downward due to their own weight. After being heated by an infrared heating device so that the film temperature can reach 22 5 ° C, the nip rolls are positioned above the nip rolls below 4m. After cooling, change the direction to the horizontal direction, and then use the nip roller to cut off the winding tension, and then take up the heat treatment to relax. The relaxation is the speed difference between the upper nip roller and the nip roller that is interrupted by the winding tension. The method was performed. The biaxially stretched oriented PEN film obtained after the relaxation heat treatment as described above was used as Example 4. The results of the characteristic evaluation of the obtained film of Example 4 are shown in Table 2. The crystals of the film of Example 4 In terms of circular processability, the defect caused by the malfunction of the die adapter device caused by the thermal dimensional change of the film, the poor thickness distribution of the film, or the flatness of the film does not occur, and good pick-up can be achieved. In addition, it does not cause contamination during the coating process of the adhesive layer or during the processing of the semiconductor wafer, and the film is not cracked when the tape is peeled off, and the processability in the manufacture of the semiconductor wafer is good. 5] Except for polymer F in Example 4, the same operation as in Example 4 was repeated to obtain a biaxially oriented PEN film having a thickness of 50 // m. The biaxially oriented PEN thus obtained was obtained. The film was referred to as Example 5. The characteristic evaluation results of the obtained film of Example 5 are shown in Table 2 -48- (46) (46) 200426934. In terms of the wafer processability of the film of Example 5, the failure caused by the malfunction of the die bonder device caused by the thermal dimensional change of the film, the poor thickness distribution of the film, or the flatness of the film did not occur, A good picking operation can be implemented. It does not cause contamination during the coating process of the adhesive layer or during the processing of the semiconductor wafer, and the film is not cracked when the tape is peeled off, and the workability in manufacturing the semiconductor wafer is good. [Example 6] Except that Example 4 was stretched 3.3 times in the longitudinal direction at 145 ° C, and then stretched 3 · 3 times in the transverse direction at 140 ° C, the rest were repeated and carried out. In the same manner as in Example 4, a biaxially oriented PEN film having a thickness of 30 # m was prepared. The thus obtained biaxially oriented PEN film was used as Example 6. The characteristic evaluation results of the obtained film of Example 6 are shown in Table 2. In terms of the wafer processability of the film of Example 6, the failure caused by the malfunction of the die bonder device caused by the change in the film size, the poor thickness distribution of the film, or the flatness of the film did not occur. Implement good picking operations. In addition, "the coating layer is not contaminated during the coating process of the adhesive layer and the semiconductor wafer processing process", and no film breakage occurs during the peeling of the tape, and the workability in the manufacture of the semiconductor wafer is good. [Example 7] Except that the polymer D was used in Example 4, the same operation as in Example 4 was repeated to obtain a biaxially oriented orientation with a thickness of 50 mm. -49- (47) (47) 200426934 PEN film. The biaxially oriented pen film thus obtained was referred to as Example 7. The characteristic evaluation results of the obtained film of Example 7 are shown in Table 2. In terms of wafer processability, a good pick-up operation can be performed without the occurrence of defects caused by a malfunction of the die bonder device caused by changes in film size, poor film thickness distribution, or flatness of the film. . On the other hand, in-process contamination occurred due to the precipitation of low polymers on the film surface. [Example 8] The same operation as in Example 6 was repeated except that the amount of inactive particles contained in the film in Example 6 was 0.01% by weight and the heat-fixing temperature was 23 ° C. To produce a biaxially oriented PEN film with a thickness of 30 / m. The biaxially oriented PEN film thus obtained was referred to as Example 8. The characteristic evaluation results of the obtained film of Example 8 are shown in Table 2. In terms of wafer processability, although the thermal dimensional change of the film is small, there are several problems in the stability of semiconductor wafer manufacturing because the difference between the longitudinal and transverse thermal shrinkage ratios exceeds the desired range. [Example 9] Except that Example 2.7 was stretched 2.7 times in the longitudinal direction at 145 t, and then stretched 2.7 times in the transverse direction at 140 ° C, the same operation as in Example 4 was repeated to obtain Biaxially oriented film with a thickness of 3 0 // m -50- (48) (48) 200426934 PEN film. The biaxially oriented PEN film thus obtained was referred to as Example 9. The characteristic evaluation results of the obtained film of Example 9 are shown in Table 2. In terms of wafer processability, although the thermal dimensional change of the film is small, the refractive index in the thickness direction of the film is high, and in-process contamination due to chip slicing of the film or film cracking during stripping occurs.

-51 - (49)200426934 表2 實施例 4 實施例 5 實施例 6 實施例 7 實施例 8 實施例 9 聚合物 E F E D E E 聚合物之特性黏度 dl/g 0.69 0.78 0.69 0.43 0.69 0.69 添加粒子 種類 球狀二 氧化砂 球狀二 氧化矽 球狀二 氧化石夕 球狀二 氧化矽 球狀二 氧化砂 球狀二 氧化矽 粒徑 //m 0.6 0.6 0.6 0.6 0.6 0.6 添加量 重量％ 0.1 0.1 0.1 0.1 0.01 0.1 縱拉伸 倍率 倍 3.0 3.0 3.3 3.0 3.3 2.7 溫度 °C 145 145 145 145 145 145 橫拉伸 倍率 倍 3.0 3.0 3.3 3.0 3.3 2.7 溫度 °c 140 140 140 140 140 140 熱固定溫度 °c 246 246 246 246 233 246 下垂式鬆熱處理溫度 °c 225 225 225 225 225 225 薄膜特性黏度 dl/g 0.59 0.64 0.59 0.39 0.59 0.59 薄膜厚度 μτη 30 50 30 50 30 30 厚度之分佈差 % 10 9 7 12 6 17 低聚合物之萃取量 雷量％ 0.5 0.3 0.4 1.0 0.4 0.5 厚度方向之折射率(ΠΖ) 1.508 1.510 1.503 1.505 1.499 1.518 熱收縮率 SMD % 0.35 0.37 0.40 0.30 0.85 0.20 STD % 0.03 0.02 0.03 0.01 0.10 0.00 差 % 0.32 0.35 0.37 0.29 0.75 0.20 摩擦係數 0.4 0.3 0.3 0.4 0.6 0.4 密度 g/cm3 1.360 1.362 1.362 1.357 1.358 — 半導體晶圓之加工性 (背面磨削及切割） 良 良 良 不良 普通 普通 半導體晶圓之加工性 (背面磨削及帶剝離） 良 良 良 不良 不良 不良 -52--51-(49) 200426934 Table 2 Example 4 Example 5 Example 6 Example 7 Example 8 Example 9 Intrinsic viscosity of polymer EFEDEE polymer dl / g 0.69 0.78 0.69 0.43 0.69 0.69 Adding particle type spherical two Oxidized sand spherical silica, spherical silica, spheroidal silica, spherical silica, spherical silica, particle size / m 0.6 0.6 0.6 0.6 0.6 0.6 added weight% 0.1 0.1 0.1 0.1 0.01 0.1 vertical Stretch magnification 3.0 3.0 3.3 3.3 3.0 3.3 2.7 Temperature ° C 145 145 145 145 145 145 145 Horizontal stretch magnification 3.0 3.0 3.3 3.3 3.0 3.3 2.7 Temperature ° c 140 140 140 140 140 140 Heat fixing temperature ° c 246 246 246 246 233 246 Sagging loose heat treatment temperature ° c 225 225 225 225 225 225 225 Intrinsic viscosity of film dl / g 0.59 0.64 0.59 0.39 0.59 0.59 Film thickness μτη 30 50 30 50 30 30 Difference in thickness distribution% 10 9 7 12 6 17 Low polymer extraction Lightning amount% 0.5 0.3 0.4 1.0 0.4 0.5 Refractive index in thickness direction (ΠZ) 1.508 1.510 1.503 1.505 1.499 1.518 Thermal shrinkage SMD% 0.35 0.37 0.40 0.30 0.85 0.20 STD% 0.03 0 .02 0.03 0.01 0.10 0.00 Difference% 0.32 0.35 0.37 0.29 0.75 0.20 Friction coefficient 0.4 0.3 0.3 0.4 0.6 0.4 Density g / cm3 1.360 1.362 1.362 1.357 1.358 — Processability of semiconductor wafers (back grinding and cutting) Good Good Good Processability of ordinary semiconductor wafers (back surface grinding and tape peeling)

Claims (1)

(1) 200426934 拾、申請專利範圍 1 · 一種半導體晶圓加工用基材薄 -萘二甲酸乙二酯爲主要成分所製得的 ，其特徵爲：在200 °c下熱處理 10分 縮率’在薄膜之製膜方向及寬幅方向均 2 ·如申請專利範圍第1項之半導 薄膜’其中半導體晶圓加工用基材薄膜 或切割帶用。 3 ·如申請專利範圍第1項之半導 薄膜’其中薄膜之萃取低聚合物量爲（ 薄膜之厚度方向之折射率爲1.501以上 4 ·如申請專利範圍第1項至第3 導體晶圓加工用基材薄膜，其中薄膜 15 %以下。 5. 如申請專利範圍第1項至第3 導體晶圓加工用基材薄膜，其中薄膜 5400MPa 以上 6900MPa 以下。 6. 如申請專利範圍第1項至第3 導體晶圓加工用基材薄膜，其中薄膜之 心線平均表面粗縫度爲3 n m以上8 0 n m 7 ·如申請專利範圍第1項至第3 導體晶圓加工用基材薄膜，其中薄膜之 以上1.3 64g/cm3以下。 8 ·如申g靑專利範圍第1 j旨至第3 膜，係以聚一 2，6 ί雙軸拉伸定向薄膜 ‘鐘時之薄膜之熱收 爲1 · 0 0 %以下。 ;體晶圓加工用基材 丨，係背面磨削帶用 :體晶圓加工用基材 )·8重量％以下，而 1 · 5 1 5以下。 項中之任一項之半 之厚度之分佈差爲 項中之任一項之半 之楊氏撓曲模量爲 項中之任一項之半 至少1個面上的中 以下。 項中之任一項之半 租、度爲 1.356g/cm3 項中之任一項之半 -53- (2) (2)200426934 導體晶圓加工用基材薄膜，其中薄膜之平均厚度爲9” 以上1 5 0 // m以下。 9.如申請專利範圍第丨項至第3項中之任一項之半 導體晶圓加工用基材薄膜，其中薄膜之動摩擦係數爲0.5 以下。 1〇·如申請專利範圍第1項至第3項中之任一項之半 導體晶圓加工用基材薄膜，其中在2〇〇它下熱處理1〇分 鐘時之薄膜之熟收縮率，爲薄膜之製膜方向之熱收縮率與 寬幅方向之熱收縮率的差之絕對値在〇 . 6 〇 %以下。 1 1 ·如申請專利範圍第1項至第3項中之任一項之半 導體晶圓加工用基材薄膜，其中薄膜係由2層以上之複數 層所成。 12.如申請專利範圍第2項之背面磨削帶，其特徵爲 背面磨削帶用基材薄膜之1個面上具有黏著劑層。 1 3 . —種背面磨削帶複合物，係於申請專利範圍第 1 2項之背面磨削帶之黏著劑層之上再具有離模薄膜。 14.如申請專利範圍第2項之切割帶，其特徵爲切割 帶用基材薄膜之1個面上具有黏著劑層。 1 5 · —種切割帶複合物，係於申請專利範圍第1 4項之 切割帶之黏著劑層之上再具有離模薄膜。 -54- 200426934 柒、（一） (二） 、本案指定代表圊為：無 、本代表圈之元件代表符號簡單說明： 捌、本案若有化學式時，請揭示最能顯示發明特徵的化學 式：(1) 200426934, patent application scope 1 · A thin substrate for semiconductor wafer processing-ethylene naphthalate is the main component, which is characterized by heat treatment at 200 ° C for 10% shrinkage rate ' In both the film forming direction and the wide direction of the film, such as the semiconducting film in item 1 of the scope of the patent application, in which the substrate film for semiconductor wafer processing or dicing tape is used. 3 · If the semiconducting thin film of item 1 of the scope of patent application ', where the amount of extracted low polymer of the thin film is (the refractive index of the thickness direction of the film is 1.501 or more 4) If the scope of the patent application is 1st to 3rd conductor wafer processing Substrate film, of which the film is 15% or less. 5. For the substrate film for conductor wafer processing from item 1 to 3 of the patent application, among which the film is from 5400MPa to 6900MPa. 6. If the patent application is from item 1 to 3 The base film for conductor wafer processing, in which the average surface thickness of the centerline of the film is 3 nm or more and 80 nm 7 · If the patent application ranges from item 1 to 3 for the base film for conductor wafer processing, Above 1.3 64g / cm3 and below. 8 · As for the first to third films in the patent scope of the patent application, the heat recovery of the film is 2 · 6 ί biaxially stretched oriented film 'bell time is 1 · 0 0% or less;; Substrate for bulk wafer processing 丨, for back grinding belts: Substrate for bulk wafer processing) · 8% by weight or less, and 1 · 5 1 5 or less. The difference in thickness distribution of any one half of the item is half of any one of the items, and the Young's flexural modulus is half of any one of the items. The half rent of any one of the items is 1.356g / cm3 The half rent of any one of the items -53- (2) (2) 200426934 Substrate film for conductor wafer processing, wherein the average thickness of the film is 9 The above 1 5 0 // m or less. 9. If the substrate film for semiconductor wafer processing according to any one of claims 丨 to 3, the dynamic friction coefficient of the film is 0.5 or less. 1〇 · For example, the substrate film for semiconductor wafer processing according to any one of claims 1 to 3, wherein the shrinkage rate of the film when heat-treated at 2000 for 10 minutes is the film formation of the film The absolute difference between the thermal contraction rate in the direction and the thermal contraction rate in the wide direction is less than 0.6%. 1 1 · Semiconductor wafer processing as described in any one of the first to third scope of the patent application A base film, wherein the film is made up of a plurality of layers. 12. The back-grinding tape of item 2 of the patent application scope is characterized in that one side of the base-film for back-grinding tape has Adhesive layer 1 3. — A kind of back grinding tape compound, which belongs to the back of the patent application scope No. 12 A mold release film is provided on the adhesive layer of the surface grinding tape. 14. The cutting tape of the second patent application range is characterized in that an adhesive layer is provided on one surface of the base film for the cutting tape. 1 5 · A kind of cutting tape compound, which has a release film on top of the adhesive layer of the cutting tape in the scope of application patent No. 14 and has a release film. -54- 200426934 柒, (a) (two), the representative representative of this case is ： None, brief description of the element representative symbols of this representative circle: 捌 If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention:
TW093109605A 2003-04-08 2004-04-07 Base film for semiconductor wafer processing TW200426934A (en)

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