KR20010043781A - 고분자 화합물, 바인더수지 및 이온도전성 고분자전해질용 조성물 및 2차전지 - Google Patents
고분자 화합물, 바인더수지 및 이온도전성 고분자전해질용 조성물 및 2차전지 Download PDFInfo
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Abstract
Description
도전성(S/㎝) | 접착강도(kN/m) | 결정성 | 실온에서의 상태 | 증발에 따른 중량감소 | |
실시예15 | 5.2 ×10-4 | 0.74 | 비정 | 고무상고체 | 0.1%이하 |
실시예16 | 2.23 ×10-4 | 0.72 | 비정 | 고무상고체 | 0.1%이하 |
실시예17 | 1.2 ×10-4 | 0.7 | 비정 | 고무상고체 | 0.1%이하 |
실시예18 | 1.57 ×10-4 | 0.82 | 비정 | 고무상고체 | 0.1%이하 |
실시예19 | 0.88 ×10-4 | 0.83 | 비정 | 고무상고체 | 0.1%이하 |
실시예20 | 0.78 ×10-4 | 0.56 | 비정 | 고무상고체 | 0.1%이하 |
실시예21 | 1.1 ×10-4 | 0.43 | 비정 | 고무상고체 | 0.1%이하 |
비교예 | |||
1 | 2 | 3 | |
도전성(S/㎝) | 8.2 ×10-6 | 7.0 ×10-6 | 6 ×10-4 |
접착강도(kN/m) | <0.01측정불능 | <0.01측정불능 | <0.1접착력 약함 |
결정성 | 결정 | 반결정 | 비정 |
실온에서의 상태 | 고체 | 고체 | 고무상고체 |
증발에 따른 중량감소 | 0.1%이하 | 0.1%이하 | 0.1%이하 |
Claims (12)
- 분자중에 하기 화학식 1로 표시되는 폴리비닐알콜 단위를 갖는 평균 중합도 20이상의 고분자 화합물에 있어서, 상기 폴리비닐알콜 단위중의 히드록실기 일부 또는 전부가 평균 몰치환도 0.3 이상의 옥시알킬렌 함유기로 치환되어 이루어지는 것을 특징으로 하는 고분자 화합물.(화학식 1)(식중 n은 20이상의 수를 표시한다.)
- 제 1 항에 있어서, 상기 옥시알킬렌함유기가 상기 폴리비닐알콜 단위를 갖는 고분자화합물에 에틸렌옥시드, 프로필렌옥시드 및 글리시돌에서 선택되는 1종 이상의 옥실란 화합물을 반응시킴으로써 도입되는 것을 특징으로 하는 고분자 화합물.
- 제 1 항에 있어서, 상기 옥시알킬렌함유기가 상기 폴리비닐알콜 단위를 갖는 고분자화합물에 말단에 히드록실기와의 반응성을 보유하는 치환기를 갖는 폴리옥시알킬렌 화합물을 반응시킴으로써 도입되는 것을 특징으로 하는 고분자 화합물.
- 제 3 항에 있어서, 상기 폴리옥시알킬렌 화합물의 히드록실기 반응성 치환기가 이소시아네이트기, 에폭시기, 카르복실산기, 카르복실산 염화물기, 에스테르기, 아미드기, 할로겐원자, 규소를 함유하는 반응성 치환기중 어느 하나인 것을 특징으로 하는 고분자 화합물.
- 제 1 항 내지 제 4 항중 어느 한 항에 있어서, 상기 고분자화합물의 폴리비닐알콜 단위의 나머지 히드록실기를 함유하는 분자중의 히드록실기 일부 또는 전부가 할로겐원자, 탄소수 1∼10의 비치환 또는 치환 1가 탄화수소기, R1CO-기 (R1은 탄소수 1∼10의 비치환 또는 치환 1가 탄화수소기), R1 3Si-기 (R1은 상기와 같음), 아미노기, 알킬아미노기 및 인원자를 갖는 기에서 선택되는 1종 또는 2종 이상의 일가의 치환기에 의해 봉쇄된 것을 특징으로 하는 고분자 화합물.
- 제 5 항에 있어서, 분자중의 히드록실기를 봉쇄하는 기로서 적어도 시아노기 치환 일가 탄화수소기를 사용하는 것을 특징으로 하는 고분자 화합물.
- 제 1 항 내지 제 6 항중 어느 한 항의 고분자 화합물로 된 것을 특징으로 하는 바인더수지.
- 제 7 항에 있어서, JIS K6854 (1994)에 준거한 접착강도가 0.1kN/m 이상인 것을 특징으로 하는 바인더수지.
- 청구범위 제 1 항 내지 제 6 항중 어느 한 항의 고분자 화합물과 이온도전성 염을 주성분으로 하는 이온도전성 고분자 전해질용 조성물.
- 제 9 항에 있어서, JIS K6854 (1994)에 준거한 접착강도가 0.1kN/m 이상인 것을 특징으로 하는 이온도전성 고분자전해질용 조성물.
- 양극과 음극과 고체 고분자 전해질 층으로 구성되는 2차전지에 있어서, 상기 고체 고분자 전해질층으로서 제 9 항 또는 제 10 항의 이온도전성 고분자 전해질용 조성물을 사용하여, 이 층을 양극과 음극 사이에 개재시켜서 이루어지는 것을 특징으로 하는 2차전지.
- 제 11 항에 있어서, 상기 양극으로서 제 7 항 또는 제 8 항의 바인더수지와 양극 활성물질을 혼합하여 이루어진 양극도프액을 양극집전체상에 도포한 복합양극을 사용함과 동시에, 이 복합양극과 리튬박으로 된 음극 또는 제 7 항 또는 제 8 항의 바인더수지와 음극 활성물질을 혼합하여 이루어진 음극도프액을 음극집전체상에 도포한 복합음극과의 사이에 제 9 항 또는 제 10 항의 이온도전성 고분자 전해질용 조성물을 개재시켜서 이루어지는 것을 특징으로 하는 2차전지.
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JP99-78086 | 1999-03-23 | ||
JP7808699 | 1999-03-23 | ||
PCT/JP2000/001733 WO2000056780A1 (fr) | 1999-03-23 | 2000-03-22 | Polymere, resine de liaison, composition d'electrolyte polymere a conductivite ionique et batterie secondaire |
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US (1) | US6533964B1 (ko) |
EP (1) | EP1090932A1 (ko) |
KR (1) | KR20010043781A (ko) |
CN (1) | CN1302306A (ko) |
CA (1) | CA2332839A1 (ko) |
WO (1) | WO2000056780A1 (ko) |
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2000
- 2000-03-22 CA CA002332839A patent/CA2332839A1/en not_active Abandoned
- 2000-03-22 WO PCT/JP2000/001733 patent/WO2000056780A1/ja not_active Application Discontinuation
- 2000-03-22 EP EP00911269A patent/EP1090932A1/en not_active Withdrawn
- 2000-03-22 CN CN00800722A patent/CN1302306A/zh active Pending
- 2000-03-22 US US09/701,033 patent/US6533964B1/en not_active Expired - Fee Related
- 2000-03-22 KR KR1020007013189A patent/KR20010043781A/ko not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100568309B1 (ko) * | 2004-09-01 | 2006-04-05 | 삼성전기주식회사 | 이온교환막에의 미세기공 형성을 이용한 폴리머 캐패시터제조방법 및 이에 따라 제조된 폴리머 캐패시터 |
Also Published As
Publication number | Publication date |
---|---|
EP1090932A1 (en) | 2001-04-11 |
WO2000056780A1 (fr) | 2000-09-28 |
US6533964B1 (en) | 2003-03-18 |
CA2332839A1 (en) | 2000-09-28 |
CN1302306A (zh) | 2001-07-04 |
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