KR101854963B1 - 기판 처리 장치 - Google Patents
기판 처리 장치 Download PDFInfo
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- KR101854963B1 KR101854963B1 KR1020157021533A KR20157021533A KR101854963B1 KR 101854963 B1 KR101854963 B1 KR 101854963B1 KR 1020157021533 A KR1020157021533 A KR 1020157021533A KR 20157021533 A KR20157021533 A KR 20157021533A KR 101854963 B1 KR101854963 B1 KR 101854963B1
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- 239000007788 liquid Substances 0.000 claims abstract description 64
- 239000002245 particle Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007599 discharging Methods 0.000 claims abstract description 7
- 239000011148 porous material Substances 0.000 claims description 34
- 238000007872 degassing Methods 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000012510 hollow fiber Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
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- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/14—Removing waste, e.g. labels, from cleaning liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0031—Degasification of liquids by filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
- B01D35/02—Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
도 2는 제1 실시 형태에 관련된 기포 포착부를 나타내는 측면도이다.
도 3은 공급 배관의 각 위치에 있어서의 압력을 나타내는 그래프이다.
도 4는 기판 처리 장치에 있어서 처리된 기판에 부착되는 파티클량을 나타내는 그래프이다.
도 5는 제2 필터의 압력 손실과, 기판에 부착되는 파티클량의 상관 관계를 나타내는 그래프이다.
도 6은 제2 필터의 포어 직경과, 기판에 부착되는 파티클량의 상관 관계를 나타내는 그래프이다.
도 7은 제2 실시 형태에 관련된 기판 처리 장치 및 처리액 공급부의 개략을 나타내는 전체도이다.
도 8은 공급 배관의 각 위치에 있어서의 압력을 나타내는 그래프이다.
도 9는 제3 실시 형태에 관련된 기포 포착부를 나타내는 개략 단면도이다.
도 10은 파티클이 부착된 기포가 기판에 부착되는 모습을 나타내는 개념도이다.
103: 파티클 9, 109: 기판
11: 노즐 13: 회전 스테이지
15: 챔버 20: 처리액 공급부
21: 탱크 30, 30a, 30b: 공급 배관
31: 펌프 40: 순환 배관
51: 제2 필터 53: 막
55: 구멍 60: 탈기 기구
F1: 제 1 필터 F2, F2a: 기포 포착부
SA, SB, SC: 구간
Claims (12)
- 처리액을 토출하여 기판을 처리하는 기판 처리 장치로서,
상기 기판을 향해서 처리액을 토출하는 토출부와,
한쪽 끝이, 파티클을 제거하는 제1 필터를 통하여, 상기 처리액을 공급하는 처리액 공급부에 접속되어 있고, 다른 쪽 끝이 상기 토출부에 접속되어 있는 공급 배관과,
상기 공급 배관에 있어서의, 상기 제1 필터와 상기 토출부 사이의 위치에 끼워져 삽입되어 있고, 상기 제1 필터를 통과함으로써 상기 처리액 중에 발생한 기포를 포착하는 기포 포착부를 구비하고,
상기 기포 포착부가 제2 필터를 가지고 있으며,
상기 기포 포착부의 상기 제2 필터에 의한 압력 손실이, 상기 제1 필터에 의한 압력 손실과 동일하거나, 그보다도 작은, 기판 처리 장치. - 청구항 1에 있어서,
상기 제2 필터의 포어 직경이 상기 제1 필터의 포어 직경의 2배보다도 큰, 기판 처리 장치. - 삭제
- 청구항 1 또는 청구항 2에 있어서,
상기 공급 배관에 있어서의, 상기 기포 포착부로부터 상기 토출부까지의 거리가, 상기 공급 배관에 있어서의, 상기 처리액을 압송하는 압력원으로부터 상기 기포 포착부까지의 거리보다도 짧은, 기판 처리 장치. - 청구항 1 또는 청구항 2에 있어서,
상기 제1 필터의 포어 직경이 10nm 내지 50nm인, 기판 처리 장치. - 청구항 1 또는 청구항 2에 있어서,
상기 제1 필터 및 상기 기포 포착부 각각의 압력 손실이 20kPa이하인, 기판 처리 장치. - 청구항 1 또는 청구항 2에 있어서,
상기 기포 포착부는 기포를 외부에 방출하는 탈기(脫氣) 기구를 갖는, 기판 처리 장치. - 청구항 1에 있어서,
상기 공급 배관의 유로를 개폐함으로써, 상기 처리액 공급부로부터 상기 토출부로의 상기 처리액의 공급을 제어하는 공급 밸브를 더 구비하며,
상기 공급 밸브는, 상기 공급 배관에 있어서, 상기 기포 포착부보다도 상기 처리액 공급부에 가까운 측에 설치되어 있는, 기판 처리 장치. - 청구항 8에 있어서,
상기 공급 배관에 있어서, 상기 기포 포착부로부터 상기 토출부까지의 사이에는, 상기 공급 배관의 상기 유로를 개폐하는 밸브가 설치되어 있지 않은, 기판 처리 장치. - 청구항 8 또는 청구항 9에 있어서,
상기 제1 필터는, 상기 공급 배관에 있어서, 상기 공급 밸브와 상기 기포 포착부 사이에 끼워져 삽입되어 있는, 기판 처리 장치. - 청구항 2에 있어서,
상기 제2 필터의 포어 직경이 상기 제1 필터의 포어 직경의 5배 이상인, 기판 처리 장치. - 청구항 11에 있어서,
상기 제2 필터의 포어 직경이 50nm 내지 200nm인, 기판 처리 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2013-026282 | 2013-02-14 | ||
JP2013026282A JP6118577B2 (ja) | 2013-02-14 | 2013-02-14 | 基板処理装置 |
PCT/JP2013/079715 WO2014125681A1 (ja) | 2013-02-14 | 2013-11-01 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20150116845A KR20150116845A (ko) | 2015-10-16 |
KR101854963B1 true KR101854963B1 (ko) | 2018-05-04 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020157021533A Active KR101854963B1 (ko) | 2013-02-14 | 2013-11-01 | 기판 처리 장치 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10335837B2 (ko) |
JP (1) | JP6118577B2 (ko) |
KR (1) | KR101854963B1 (ko) |
CN (1) | CN105074880B (ko) |
TW (1) | TWI535496B (ko) |
WO (1) | WO2014125681A1 (ko) |
Cited By (1)
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US11121007B2 (en) | 2018-09-27 | 2021-09-14 | Semes Co., Ltd. | Apparatus for supplying chemical liquid |
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JP6420604B2 (ja) | 2014-09-22 | 2018-11-07 | 株式会社Screenホールディングス | 塗布装置 |
JP6866148B2 (ja) * | 2016-12-20 | 2021-04-28 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6959743B2 (ja) | 2017-02-22 | 2021-11-05 | 株式会社Screenホールディングス | 基板処理装置 |
JP6863788B2 (ja) * | 2017-03-21 | 2021-04-21 | 株式会社Screenホールディングス | フィルタ連結装置およびこれを備えた基板処理装置 |
JP6900274B2 (ja) * | 2017-08-16 | 2021-07-07 | 株式会社Screenホールディングス | 薬液供給装置、基板処理装置、薬液供給方法、および基板処理方法 |
JP6979852B2 (ja) * | 2017-10-26 | 2021-12-15 | 株式会社Screenホールディングス | 処理液供給装置、基板処理装置、および処理液供給方法 |
CN109326505B (zh) * | 2018-08-27 | 2021-12-03 | 上海中欣晶圆半导体科技有限公司 | 一种提高硅片最终清洗金属程度的方法及装置 |
JP7594883B2 (ja) * | 2020-11-06 | 2024-12-05 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP2022149413A (ja) * | 2021-03-25 | 2022-10-06 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
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US11121007B2 (en) | 2018-09-27 | 2021-09-14 | Semes Co., Ltd. | Apparatus for supplying chemical liquid |
Also Published As
Publication number | Publication date |
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WO2014125681A1 (ja) | 2014-08-21 |
JP6118577B2 (ja) | 2017-04-19 |
US10335837B2 (en) | 2019-07-02 |
TWI535496B (zh) | 2016-06-01 |
US20150375273A1 (en) | 2015-12-31 |
CN105074880B (zh) | 2018-06-26 |
JP2014154860A (ja) | 2014-08-25 |
CN105074880A (zh) | 2015-11-18 |
KR20150116845A (ko) | 2015-10-16 |
TW201434544A (zh) | 2014-09-16 |
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