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KR100453210B1 - ＧａＮ계 화합물 반도체의 제조 방법과 ＧａＮ계 화합물반도체 디바이스 - Google Patents

ＧａＮ계 화합물 반도체의 제조 방법과 ＧａＮ계 화합물반도체 디바이스 Download PDF

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Publication number
KR100453210B1
KR100453210B1 KR10-2000-0076283A KR20000076283A KR100453210B1 KR 100453210 B1 KR100453210 B1 KR 100453210B1 KR 20000076283 A KR20000076283 A KR 20000076283A KR 100453210 B1 KR100453210 B1 KR 100453210B1
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South Korea
Prior art keywords
layer
gan
compound semiconductor
forming
substrate
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KR10-2000-0076283A
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English (en)
Korean (ko)
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KR20010062407A (ko
Inventor
시로 사카이
따오 왕
Original Assignee
나이트라이드 세마이컨덕터스 코포레이션, 리미티드
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Priority claimed from JP2000143826A external-priority patent/JP3274674B2/ja
Priority claimed from JP2000227963A external-priority patent/JP3274676B2/ja
Application filed by 나이트라이드 세마이컨덕터스 코포레이션, 리미티드 filed Critical 나이트라이드 세마이컨덕터스 코포레이션, 리미티드
Publication of KR20010062407A publication Critical patent/KR20010062407A/ko
Application granted granted Critical
Publication of KR100453210B1 publication Critical patent/KR100453210B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02513—Microstructure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
KR10-2000-0076283A 1999-12-20 2000-12-14 ＧａＮ계 화합물 반도체의 제조 방법과 ＧａＮ계 화합물반도체 디바이스 KR100453210B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPHEI11-376842 1999-12-20
JP37684299 1999-12-20
JP2000143826A JP3274674B2 (ja) 2000-05-16 2000-05-16 窒化ガリウム系化合物半導体の製造方法
JP2000-143826 2000-05-16
JP2000227963A JP3274676B2 (ja) 1999-12-20 2000-06-22 窒化ガリウム系化合物半導体の製造方法
JP2000-227963 2000-06-22

Publications (2)

Publication Number Publication Date
KR20010062407A KR20010062407A (ko) 2001-07-07
KR100453210B1 true KR100453210B1 (ko) 2004-10-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2000-0076283A KR100453210B1 (ko) 1999-12-20 2000-12-14 ＧａＮ계 화합물 반도체의 제조 방법과 ＧａＮ계 화합물반도체 디바이스

Country Status (4)

Country Link
US (1) US6475882B1 (fr)
EP (1) EP1111663A3 (fr)
KR (1) KR100453210B1 (fr)
TW (1) TW493207B (fr)

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US7118929B2 (en) * 2000-07-07 2006-10-10 Lumilog Process for producing an epitaxial layer of gallium nitride
JP3863720B2 (ja) * 2000-10-04 2006-12-27 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
JP4554803B2 (ja) * 2000-12-04 2010-09-29 独立行政法人理化学研究所 低転位バッファーおよびその製造方法ならびに低転位バッファーを備えた素子
JP3454791B2 (ja) * 2001-03-01 2003-10-06 三洋電機株式会社 窒化物系半導体素子および窒化物系半導体の形成方法
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US7399684B2 (en) 2002-07-11 2008-07-15 University College Cork - National University Of Ireland, Cork Defect reduction in semiconductor materials
WO2004008509A1 (fr) * 2002-07-11 2004-01-22 University College Cork - National University Of Ireland, Cork Reduction des defauts dans des materiaux semi-conducteurs
DE10321305A1 (de) * 2003-05-08 2004-12-02 Dadgar, Armin, Dr. Verfahren zur Herstellung von hoch leitfähigen, rissfreien, GaN-basierten Pufferschichten
TWI244216B (en) * 2003-10-31 2005-11-21 Epitech Corp Ltd Light-emitting device and method for manufacturing the same
US20050145851A1 (en) * 2003-12-17 2005-07-07 Nitronex Corporation Gallium nitride material structures including isolation regions and methods
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US7977703B2 (en) * 2005-11-22 2011-07-12 Rohm Co., Ltd. Nitride semiconductor device having a zinc-based substrate
CN100395379C (zh) * 2005-12-15 2008-06-18 南京大学 一种生长高结晶氮化铟单晶外延膜的方法
JP4807081B2 (ja) * 2006-01-16 2011-11-02 ソニー株式会社 ＧａＮ系化合物半導体から成る下地層の形成方法、並びに、ＧａＮ系半導体発光素子の製造方法
KR20090018106A (ko) * 2006-05-09 2009-02-19 더 리전츠 오브 더 유니버시티 오브 캘리포니아 비극성 및 준극성 (ａｌ, ｇａ, ｉｎ)ｎ을 위한 인-시츄 결함 감소 기술
JP5003033B2 (ja) 2006-06-30 2012-08-15 住友電気工業株式会社 ＧａＮ薄膜貼り合わせ基板およびその製造方法、ならびにＧａＮ系半導体デバイスおよびその製造方法
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Also Published As

Publication number Publication date
US6475882B1 (en) 2002-11-05
KR20010062407A (ko) 2001-07-07
EP1111663A3 (fr) 2002-05-02
TW493207B (en) 2002-07-01
EP1111663A2 (fr) 2001-06-27

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