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JPS60148131A - Mounting method of semiconductor element - Google Patents

Mounting method of semiconductor element

Info

Publication number
JPS60148131A
JPS60148131A JP59004321A JP432184A JPS60148131A JP S60148131 A JPS60148131 A JP S60148131A JP 59004321 A JP59004321 A JP 59004321A JP 432184 A JP432184 A JP 432184A JP S60148131 A JPS60148131 A JP S60148131A
Authority
JP
Japan
Prior art keywords
pellet
glass layer
melting point
low melting
point glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59004321A
Other languages
Japanese (ja)
Inventor
Takashi Kinoshita
高志 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP59004321A priority Critical patent/JPS60148131A/en
Publication of JPS60148131A publication Critical patent/JPS60148131A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27011—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature
    • H01L2224/27013—Involving a permanent auxiliary member, i.e. a member which is left at least partly in the finished device, e.g. coating, dummy feature for holding or confining the layer connector, e.g. solder flow barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L2224/743—Apparatus for manufacturing layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83009—Pre-treatment of the layer connector or the bonding area
    • H01L2224/83051—Forming additional members, e.g. dam structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8389—Bonding techniques using an inorganic non metallic glass type adhesive, e.g. solder glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent a pellet crack and a pellet stripping from generating when a pellet is adhered on a ceramic substrate having a low-melting point glass layer by a method wherein the ceramic substrate is heated to the softening point temperature of the low-melting point glass layer, pressure welding is applied on the low-melting point glass layer with a silicon flat plate and the low-melting point glass layer is heated to the fluid point temperature thereof. CONSTITUTION:A ceramic substrate 1 having a low-melting point glass layer 3 is heated by a heater block. After the glass layer 3 reached the softening point temperature thereof, a pressure welding is applied on the glass layer 3 with a silicon flat plate 7. The glass layer 3 is heated up to reach the fluid point temperature thereof, a pellet 4 is pressed from the upper part thereof and the pellet 4 is bonded on the substrate 1 through the glass layer 3. According to this way, no bubble generates in glass parts under the pellet 3, thereby enabling to prevent a pellet crack and a pellet stripping from generating.

Description

【発明の詳細な説明】 不発ＢＡｔａ半専体累子の取り付は方法に関し、特にダ
イアタッチ部の低融点ガラス層を介して半導体ペレット
全セラミック基体に取り付ける方法（ガラスマウント方
法）に関する。DETAILED DESCRIPTION OF THE INVENTION The attachment of unexploded BAta semi-dedicated resistors relates to a method, and in particular to a method of attaching a semiconductor pellet to an all-ceramic substrate via a low melting point glass layer of a die attach portion (glass mounting method).

従来のガラスマウント方法ａ第１図に示Ｔ様に、キャビ
ティ２内のダイブタ多チ部に低融点ガラス層３を育する
セラミック基体ｔｖｒヒーターブロックで加熱し、前記
低融点ガラス層３が流動点温度に達した後、裏面にアル
ミニウム（ＡＩ　）等の加工膜５を臂する半導体ベレッ
ト４（以下ベレットと記Ｔ）ｋ上部より矢印のごとく加
圧し、低融点ガラス層３を介してベレット４１にセラミ
ック基体ｌｖｃ阪着するのである。Conventional glass mounting method a As shown in FIG. After reaching the temperature, pressure is applied from the top of the semiconductor pellet 4 (hereinafter referred to as "bullet T") k, which has a processed film 5 made of aluminum (AI) or the like on the back side, as shown by the arrow, and is applied to the pellet 41 through the low melting point glass layer 3. The ceramic substrate LVC is attached.

ところで、従来のガラスマウント方法に、以下に述べる
様な欠点を有している。セラミック基体のキャビティ内
に低融点ガラス層を形成する方法に２バインダーや溶剤
含金むペイント状の粉末ガラスを印刷し、その後、ガラ
ス全焼成することが一般に行なわれている。この際、第
１図に示す様に、低融点ガラス層３０表面ａ凹凸形状と
なっていることが多い。この凹凸形状に、マウント時に
低融点ガラスがｆｉ、ｗＪ点温度ｒｃｙｚった際にも十
分な時間？経過しないと消失しない。この状態でペレッ
ト？上部エリ加圧してマウントしｆｔ、場合、第２図に
示Ｔ様に、ベレット４の下のカラス部分ｌ（気泡６が発
生してしまう。この部分にベレット裏面の加工膜５とガ
ラスの未反応部分となジ、後工程の熱ストレスや機械的
ストレスｌ／ｃＬり、ベレットクラックやベレット剥離
が生じてしまうという欠点を有している。また製品とし
て使用している際のちょっとした環境の変化に対しても
、ベレットクラック等の不良音発生し易丁いという欠点
ヲ育している。However, the conventional glass mounting method has the following drawbacks. A common method for forming a low-melting glass layer in a cavity of a ceramic substrate is to print a paint-like powdered glass containing a binder or a solvent and then to completely sinter the glass. At this time, as shown in FIG. 1, the surface a of the low melting point glass layer 30 often has an uneven shape. Due to this uneven shape, is there enough time even when the low melting point glass becomes fi, wj point temperature rcyz during mounting? It will not disappear until time passes. Pellets in this condition? If the upper area is mounted by applying pressure, as shown in Fig. 2, the crow part l (bubble 6 will be generated) under the pellet 4. This part will be covered with the processed film 5 on the back of the pellet and the unfinished glass. It has the drawbacks of reacting parts, heat stress and mechanical stress (l/cL) in post-processes, and pellet cracks and pellet peeling.Also, slight environmental changes occur when used as a product. However, it also has the disadvantage of being prone to producing defects such as pellet cracks.

本発明の目的に１従来のガラスマウント方法の欠点を解
消すべく、ペレット裏面に未反応部分が生じることがな
いガラスマウント方法全提供することｌｌ′ｃある。SUMMARY OF THE INVENTION In order to eliminate the drawbacks of conventional glass mounting methods, it is an object of the present invention to provide an entire glass mounting method that does not cause unreacted portions on the back surface of pellets.

本発明の特徴に１ダイアタッチ部【低融点ガラス層が形
５ｙ、されたセラミック基体を該低融点ガラスの軟化点
温度【加熱しシリコン等の平板で該低融点ガラス全面押
しする工程と、しかる後に前記低融点ガラスＮＩＩを流
動点温度に加熱し前記低融点ガラス／ｉｔｒ介してベレ
ット全セラミック基体ニ啜着させる半尋体累す取９付は
方法ｒｃある。The features of the present invention include (1) a step of heating the ceramic substrate having the low melting point glass layer in the shape 5y at the softening point of the low melting point glass and pressing the entire surface of the low melting point glass with a flat plate of silicon or the like; Thereafter, the method rc is to heat the low melting point glass NII to the pour point temperature and attach it to the pellet all-ceramic substrate through the low melting point glass/ITR.

つぎＦ本発明を実施例罠エク説明する。第３図と第４図
に、本発明九基づくガラスマウント方法の一笑施例？示
す。第３図において、低融点ガラス層３會有するセラミ
ック基体１をヒーターブロックで加熱し、前記低融点ガ
ラス層３が軟化点温度に達した後、上部より矢印のごと
く低融点ガラスと反応性が極めて悪いシリコン平板７【
て面押し全するのである。この面押しに１９、低融点ガ
ラス表面の凹凸が平面となる。しかる後に、第４図ｒｃ
示す様に、上面が平面状態となった低融点ガラス層３が
流動点温度に達するまで加熱した後、ベレット４を上部
エフ矢印のごとく加圧し、低融点ガラス層３？介してベ
レット４をセラミック基体ｌに吸着するのＴある。この
ガラスマウント方法であれば、第５図に示Ｔ様に、ベレ
ット下のガラス部分に気泡が発生することがなく、ペレ
ット裏面のＭ等の加工膜５と低融点ガラス３の反応も十
分に行なわれる。Next, the present invention will be explained by way of example. FIGS. 3 and 4 show an example of a glass mounting method based on the present invention. show. In FIG. 3, a ceramic substrate 1 having three low melting point glass layers is heated with a heater block, and after the low melting point glass layer 3 reaches a softening point temperature, it becomes extremely reactive with the low melting point glass as shown by the arrow from the top. Bad silicon plate 7 [
I will do everything in my power to do so. Due to this surface pressing, the unevenness of the low melting point glass surface becomes flat. After that, Fig. 4 rc
As shown, after heating the low melting point glass layer 3 whose upper surface is flat until it reaches the pour point temperature, the pellet 4 is pressurized as shown by the arrow F at the top, and the low melting point glass layer 3? The pellet 4 is adsorbed onto the ceramic substrate 1 through the ceramic substrate 1. With this glass mounting method, no air bubbles are generated in the glass part under the pellet as shown in Fig. 5, and the reaction between the processed film 5 such as M on the back of the pellet and the low melting point glass 3 is also sufficiently It is done.

上述した様に、不発明に基づくガラスマウント方法であ
れば良好なペレット吸着が達成され、ベレットクラック
やベレット剥離等の不良発生のｌい、信頼度の高い！Ｐ
専鉢体装置得ら力るという利点を有している。As mentioned above, the glass mounting method based on the invention achieves good pellet adsorption, eliminates defects such as pellet cracks and pellet peeling, and is highly reliable! P
It has the advantage of being a specialized pot body device.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図おＬび第２図μ従来のガラスマウント方法を示Ｔ
断面図、第３図、第４図お工ひ第５図ａ本発ＢＡｖｃ基
づくガラスマウント方法の一実７０Ｉヲ示す断面図であ
る。 ｌ・・・セラミック基体、２・・・キャビティ、３・・
・低融点ガラス層、４・・・半導体ベレット、５−Ａ７
等の加工膜、６・・・低融点ガラス中の気泡、７・・・
シリコン等の平板。 ｙｆ　図 篤２図Figures 1 and 2 show the conventional glass mounting method.
FIG. 5 is a sectional view showing an example of the glass mounting method 70I based on the BAvc of the present invention. l... Ceramic base, 2... Cavity, 3...
・Low melting point glass layer, 4... semiconductor pellet, 5-A7
Processed films such as 6... Bubbles in low melting point glass, 7...
A flat plate of silicon, etc. yf Diagram 2

Claims (1)

【特許請求の範囲】[Claims] キャビティ内のダイアタッチ部で低融点ガラス層が形成
されたセラミック基体を該低融点ガラスの軟化点温度丸
加熱しシリコン等の平板で該低融点ガラス層を面押しす
る工程と、しかる後に前記セラミック基体′ｆ、前記低
融点ガラスの流動点温度に加熱して前記低融点ガラス層
を介して半導体ぺ゛レツＩＩＩＦする″Ｐ専体−子取！
７−付は方法０A step of heating the ceramic substrate on which the low melting point glass layer is formed at the die attach part in the cavity to the softening point temperature of the low melting point glass and pressing the low melting point glass layer on the surface with a flat plate such as silicon; The substrate 'f is heated to the pour point temperature of the low melting point glass and semiconductor pellets are formed through the low melting point glass layer.
7- marked is method 0
JP59004321A 1984-01-13 1984-01-13 Mounting method of semiconductor element Pending JPS60148131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59004321A JPS60148131A (en) 1984-01-13 1984-01-13 Mounting method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59004321A JPS60148131A (en) 1984-01-13 1984-01-13 Mounting method of semiconductor element

Publications (1)

Publication Number Publication Date
JPS60148131A true JPS60148131A (en) 1985-08-05

Family

ID=11581194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59004321A Pending JPS60148131A (en) 1984-01-13 1984-01-13 Mounting method of semiconductor element

Country Status (1)

Country Link
JP (1) JPS60148131A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6343334A (en) * 1986-08-08 1988-02-24 Nec Corp Method of mounting semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6343334A (en) * 1986-08-08 1988-02-24 Nec Corp Method of mounting semiconductor element

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