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JPS5752137A - Bonding method for work in lapping and polishing - Google Patents

Bonding method for work in lapping and polishing

Info

Publication number
JPS5752137A
JPS5752137A JP55123061A JP12306180A JPS5752137A JP S5752137 A JPS5752137 A JP S5752137A JP 55123061 A JP55123061 A JP 55123061A JP 12306180 A JP12306180 A JP 12306180A JP S5752137 A JPS5752137 A JP S5752137A
Authority
JP
Japan
Prior art keywords
work
substrate
wax
adhesive
quartz glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55123061A
Other languages
Japanese (ja)
Inventor
Katsura Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP55123061A priority Critical patent/JPS5752137A/en
Publication of JPS5752137A publication Critical patent/JPS5752137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To improve the pressure and thermal bonding of a work on the surface of a quartz glass substrate and the thickness accuracy of the work by coating an adhesive on the roughened surface of the substrate and pressurizing and thermally bonding the work on the surface of the substrate. CONSTITUTION:The surface of a quartz glass substrate material 3 is roughened by sandblast or etching, and many small grooves 4 are formed thereon. When an adhesive 2', e.g., wax or the like is sprayed on the substrate to coat it in the uniform thickness, a work 1 is placed on the substrate, a load higher than the prescribed value is applied from above to heat the wax higher than the melting point of the wax, unnecessary wax 2 on the substrate 3 is flowed to the small grooves 4. In this manner, the work 1 and the substrate material 3 can be bonded precisely without remaining the wax layer between the work 1 and the material 3, thereby enhancing the thickness accuracy of the work.
JP55123061A 1980-09-05 1980-09-05 Bonding method for work in lapping and polishing Pending JPS5752137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55123061A JPS5752137A (en) 1980-09-05 1980-09-05 Bonding method for work in lapping and polishing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55123061A JPS5752137A (en) 1980-09-05 1980-09-05 Bonding method for work in lapping and polishing

Publications (1)

Publication Number Publication Date
JPS5752137A true JPS5752137A (en) 1982-03-27

Family

ID=14851224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55123061A Pending JPS5752137A (en) 1980-09-05 1980-09-05 Bonding method for work in lapping and polishing

Country Status (1)

Country Link
JP (1) JPS5752137A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191630A (en) * 1984-03-09 1985-09-30 Sintokogio Ltd Production of air fermeable durable mold
JPS60166446U (en) * 1984-04-06 1985-11-05 車体工業株式会社 Irregular cooling metal for casting
JPH0422531A (en) * 1990-05-18 1992-01-27 Nippon Steel Corp Metal particle mold manufacturing method for casting using organic binder

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60191630A (en) * 1984-03-09 1985-09-30 Sintokogio Ltd Production of air fermeable durable mold
JPH0336611B2 (en) * 1984-03-09 1991-06-03 Sintokogio Ltd
JPS60166446U (en) * 1984-04-06 1985-11-05 車体工業株式会社 Irregular cooling metal for casting
JPH0422531A (en) * 1990-05-18 1992-01-27 Nippon Steel Corp Metal particle mold manufacturing method for casting using organic binder

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