JPS6373638A - Wafer bonding device - Google Patents

Abstract

PURPOSE:To enable a wafer to be bonded onto a substrate in even thickness using a wax containing no bubbles by a method wherein the semiconductor wafer pressed down by a weight is held in a vacuum chamber. CONSTITUTION:A weight 5 with its bottom surface taking flat shape to abut against a semiconductor wafer 1 is to be pressed down by the weight 6 heated by a heater (hot plate) built-in or separately provided. The semiconductor wafer 1 pressed down by the weight 5 is mounted on a substrate 3 coated with wax 2 to be placed on a hotplate 4. Next, the whole body is covered with a vacuum chamber 6 to be held in vacuum state for several minutes. Later, the vacuum chamber 6 and the weight 5 are removed while the substrate 3 is taken out of the hot plate 4 to finish the bonding process of semiconductor wafer 1 onto the substrate 3.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention provides a method for cutting semiconductor wafers into pellets.
The present invention relates to a wafer bonding device that attaches a wafer to a substrate using wax in advance.

[Conventional technology]

FIG. 2 is a cross-sectional view showing a conventional wafer pasting device. In the figure, 1 is a semiconductor wafer, and wax 3 is placed on a substrate 2.
are bonded together. 4 indicates a hot plate.

Next, a method for attaching the semiconductor wafer 1 will be briefly explained. First, wax 3 in a predetermined molten state is applied thinly onto the substrate 2 using a brush or a rotating device, and then the semiconductor wafer 1 is placed on top of the wax 3 and placed on the heated hot plate 4. The method involved further melting wax 3 and bonding the two together.

[Problem that the invention seeks to solve]

Since the conventional wafer pasting device is configured as described above, air bubbles 7 remain in the wax 3 as shown in FIG. 3, and the semiconductor wafer 1 is heated as shown in FIG. As a result, the thickness of the wax 3 is not uniform due to the warping, and when the semiconductor wafer 1 is later cut, small semiconductor pellets may peel off, or some pellets may remain without being completely cut to the bottom. There were problems such as:

This invention was made in order to solve the above-mentioned problems, and provides a wafer sticking device that can stick a semiconductor wafer to a substrate with wax that has a uniform thickness and does not contain bubbles. The purpose is to

[Means for solving problems]

A wafer bonding apparatus according to the present invention includes a hot plate that heats a substrate, a weight heated by a heater that pressurizes a semiconductor wafer from above, and a vacuum chamber that covers these.

[Effect]

The wafer bonding device of the present invention is capable of obtaining wax with a uniform thickness in a stable state at all times without dissipating heat from the semiconductor wafer by placing a heated weight on top of the semiconductor wafer. By using a chamber in combination, air bubbles in the wax can be removed.

〔Example〕

An embodiment of the present invention will be described below with reference to FIG.

In Figure 1, the same symbols as in Figure 2 indicate the same things,
Reference numeral 5 denotes a weight placed on the semiconductor wafer 1, whose lower surface, that is, the surface that comes into contact with the semiconductor wafer 1, is flat and heated by a built-in or separately provided heater (not shown). The semiconductor wafer 1 is pressurized in this state. 6 indicates a vacuum chamber for covering the whole.

First, wax 3 is applied to substrate 2 in the same manner as in the conventional method, semiconductor wafer 1 is placed on it, heated weight 5 is placed on top of this, and these are placed on hot plate 4. Next, a vacuum chamber 6 is placed to cover the whole, and the inside is brought into a vacuum state, which is maintained for several minutes. Thereafter, the vacuum chamber 6 and the weight 5 are removed, and the substrate 2 is removed from the hot plate 4, thereby completing the attachment of the semiconductor wafer 1 to the substrate 2.

In the above embodiment, the weight 5 was placed on the semiconductor wafer 1 and then placed on the hot plate 4, but even if the weight 5 is placed on the hot plate 4 after the semiconductor wafer 1 is placed on it, The same effect can be obtained.

〔Effect of the invention〕

As explained above, the present invention involves placing a substrate and a semiconductor wafer bonded to the substrate with wax on a hot plate, placing a weight that pressurizes the semiconductor wafer from above, and moving the entire substrate into a vacuum chamber. The structure is simple, and it is easy to automate.
It has the advantage that semiconductor wafers can be attached in a stable state.

[Brief explanation of the drawing]

FIG. 1 is a sectional view showing the configuration of a wafer sticking device according to an embodiment of the present invention, FIG. 2 is a sectional view showing a conventional wafer sticking device, and FIGS. 3 and 4 are sectional views showing a conventional wafer sticking device. FIG. 2 is a cross-sectional view of a semiconductor wafer and a substrate attached together. In the figure, 1 is a semiconductor wafer, 2 is a substrate, 3 is wax, 4 is a hot plate, 5 is a weight, and 6 is a vacuum chamber. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (2)

[Claims] (1) An apparatus for bonding a semiconductor wafer and a substrate together using wax, which includes a hot plate on which the substrate is placed and heats the substrate, and a hot plate that heats the substrate, and a hot plate that heats the semiconductor wafer placed on the substrate via wax. A wafer pasting device characterized by comprising a weight for applying pressure from above and a vacuum chamber that covers the weights and holds them in a vacuum. (2) The wafer bonding apparatus according to claim (1), wherein the weight has a flat bottom surface and pressurizes the semiconductor wafer while being heated by a heater.