JPS5724538A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5724538A JPS5724538A JP9923580A JP9923580A JPS5724538A JP S5724538 A JPS5724538 A JP S5724538A JP 9923580 A JP9923580 A JP 9923580A JP 9923580 A JP9923580 A JP 9923580A JP S5724538 A JPS5724538 A JP S5724538A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- photomask
- exposed
- mask pattern
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To prevent a defect in a mask pattern without permitting a photosensitive resin to remain on the outside edge of a wafer with a certain width by a method wherein the wafer coated with a positive type photosensitive resin and a photomask on which a mask pattern region smaller than the wafer has been formed are placed one above another and exposed to rays. CONSTITUTION:The surfaces of a wafer 31 is coated with a positive type photoresist 32. A mask pattern region 35 smaller than the main surface of the wafer 31 but similar to the figure of the latter is formed on a photomask 33. The photomask 33 and the wafer 31 are set against each other, before being exposed to ultraviolet rays 34. The outside edge of the wafer 31 in several mm. width is exposed to the rays through a transparent member 36 of the photomask 33. By so doing, when the wafer 31 is put into grooves 42 of a cassete 41, the photoresist 32 on the wafer does not make contact with the cassette, thus preventing the occcurrence of defects in the pattern such as cracks and exfoliation.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9923580A JPS5724538A (en) | 1980-07-18 | 1980-07-18 | Preparation of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9923580A JPS5724538A (en) | 1980-07-18 | 1980-07-18 | Preparation of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5724538A true JPS5724538A (en) | 1982-02-09 |
Family
ID=14242012
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9923580A Pending JPS5724538A (en) | 1980-07-18 | 1980-07-18 | Preparation of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5724538A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060724A (en) * | 1983-09-14 | 1985-04-08 | Toshiba Corp | Semiconductor exposing device |
JPH0232526A (en) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | Substrate periphery exposure device |
JPH04121728U (en) * | 1991-04-19 | 1992-10-30 | 太陽誘電株式会社 | Semiconductor device manufacturing equipment |
JPH0794450A (en) * | 1993-06-29 | 1995-04-07 | Japan Storage Battery Co Ltd | Local ashing device |
-
1980
- 1980-07-18 JP JP9923580A patent/JPS5724538A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6060724A (en) * | 1983-09-14 | 1985-04-08 | Toshiba Corp | Semiconductor exposing device |
JPH0232526A (en) * | 1988-07-22 | 1990-02-02 | Mitsubishi Electric Corp | Substrate periphery exposure device |
JPH04121728U (en) * | 1991-04-19 | 1992-10-30 | 太陽誘電株式会社 | Semiconductor device manufacturing equipment |
JPH0794450A (en) * | 1993-06-29 | 1995-04-07 | Japan Storage Battery Co Ltd | Local ashing device |
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