[go: up one dir, main page]

JPS57100428A - Method for photomechanical process - Google Patents

Method for photomechanical process

Info

Publication number
JPS57100428A
JPS57100428A JP17750680A JP17750680A JPS57100428A JP S57100428 A JPS57100428 A JP S57100428A JP 17750680 A JP17750680 A JP 17750680A JP 17750680 A JP17750680 A JP 17750680A JP S57100428 A JPS57100428 A JP S57100428A
Authority
JP
Japan
Prior art keywords
resist layer
layer
exposing
semiconductor substrate
entire surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17750680A
Other languages
Japanese (ja)
Inventor
Seiji Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP17750680A priority Critical patent/JPS57100428A/en
Publication of JPS57100428A publication Critical patent/JPS57100428A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent pinholes and improve pattern accuracy by providing the 1st positive type photoresist layer on a semiconductor substrate, exposing the entire surface, providing the 2nd positive type photoresist layer thereon and exposing the same through a photomask. CONSTITUTION:A phosphate glass layer 6 and the 1st resist layer 7 are formed on a semiconductor substrate 5, and the entire surface is exposed with UV light, whereby it is made soluble. The same resist layer 8 is formed thereon and is prebaked. In succession to this, these layers are subjected to mask alignment and exposure, then to a developing treatment and a rinsing treatment. In spite of slight underexposure of the 2nd resist layer, the 2nd resist layer on the 1st resist layer is removed surely at the time when the 1st resist layer dissolves. The shape of the pattern is such that the 2nd resist layer is roughly perpendicular, and this is suited for pattern formation by a lift off method.
JP17750680A 1980-12-16 1980-12-16 Method for photomechanical process Pending JPS57100428A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17750680A JPS57100428A (en) 1980-12-16 1980-12-16 Method for photomechanical process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17750680A JPS57100428A (en) 1980-12-16 1980-12-16 Method for photomechanical process

Publications (1)

Publication Number Publication Date
JPS57100428A true JPS57100428A (en) 1982-06-22

Family

ID=16032091

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17750680A Pending JPS57100428A (en) 1980-12-16 1980-12-16 Method for photomechanical process

Country Status (1)

Country Link
JP (1) JPS57100428A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171818A (en) * 1982-03-31 1983-10-08 Matsushita Electric Ind Co Ltd Method and apparatus for manufacturing semiconductor device
JPS6027131A (en) * 1983-07-25 1985-02-12 Rohm Co Ltd Method for coating photoresist
JPS6045511U (en) * 1983-09-02 1985-03-30 日本電気株式会社 solid state microwave oscillator
JPS61234078A (en) * 1985-04-09 1986-10-18 Fujitsu Ltd Manufacture of thin film transistor
JPS62285423A (en) * 1986-06-03 1987-12-11 Nec Corp Resist coating method
JPH02118653A (en) * 1988-10-28 1990-05-02 Nec Corp Process for forming fine pattern using two-layered photoresist

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114931A (en) * 1975-04-02 1976-10-09 Hitachi Ltd Photoresist pattern formation method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51114931A (en) * 1975-04-02 1976-10-09 Hitachi Ltd Photoresist pattern formation method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171818A (en) * 1982-03-31 1983-10-08 Matsushita Electric Ind Co Ltd Method and apparatus for manufacturing semiconductor device
JPS6027131A (en) * 1983-07-25 1985-02-12 Rohm Co Ltd Method for coating photoresist
JPS6045511U (en) * 1983-09-02 1985-03-30 日本電気株式会社 solid state microwave oscillator
JPS61234078A (en) * 1985-04-09 1986-10-18 Fujitsu Ltd Manufacture of thin film transistor
JPS62285423A (en) * 1986-06-03 1987-12-11 Nec Corp Resist coating method
JPH02118653A (en) * 1988-10-28 1990-05-02 Nec Corp Process for forming fine pattern using two-layered photoresist

Similar Documents

Publication Publication Date Title
JPH04115515A (en) Forming method of pattern
US4377633A (en) Methods of simultaneous contact and metal lithography patterning
JPS57100428A (en) Method for photomechanical process
JPS5595324A (en) Manufacturing method of semiconductor device
JPS57183030A (en) Manufacture of semiconductor device
JPH02238457A (en) Formation of thick-film resist pattern
JPS5461931A (en) Forming method of photo resist patterns
JPS5574544A (en) Photo mask correcting method
JPS62245251A (en) Resist pattern forming method
JPS57109331A (en) Formation of resist pattern
JPS5543542A (en) Exposure method and exposure mask used for this
JPS5724538A (en) Preparation of semiconductor device
JPS5732635A (en) Production of semiconductor device
JPS59135468A (en) Exposing mask
JPS5632143A (en) Manufacture of photomask
JPS5541728A (en) Pattern formation by thick film paste
JPS57124437A (en) Correction of pattern defect
JPS55128831A (en) Method of making photoresist film pattern
JPS6463956A (en) Pattern forming method
JPS5785056A (en) Preparation of metallic substrate
JPS57186329A (en) Exposing method
JPS5734506A (en) Production of color filter
JPS6447025A (en) Etching
JPS6436027A (en) Method of processing multilayered film
JPS56161642A (en) Manufacture of semiconductor device