JPS5632143A - Manufacture of photomask - Google Patents
Manufacture of photomaskInfo
- Publication number
- JPS5632143A JPS5632143A JP10834579A JP10834579A JPS5632143A JP S5632143 A JPS5632143 A JP S5632143A JP 10834579 A JP10834579 A JP 10834579A JP 10834579 A JP10834579 A JP 10834579A JP S5632143 A JPS5632143 A JP S5632143A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- subjected
- glass substrate
- photomask
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 238000010884 ion-beam technique Methods 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000009832 plasma treatment Methods 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/56—Organic absorbers, e.g. of photo-resists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a photomask of high accuracy by coating a resist film on the surface of a transparent glass substrate, forming resist patterns, irradiating ion beams to blacken the patterns and subjecting the same to fluoride plasma treatment thereby hardening the surface. CONSTITUTION:A positive type photoresist soln. is coated on the surface of a transparent glass substrate 1 such quartz glass substrate to form a photoresist film 2 of about 0.75mum thickness. Thence, it is subjected to pattern exposure with a photo repeater, and after the exposure, the substrate is immersed in a developing soln. to be developed, whereby a photoresist pattern 3 of a desired shape is obtained. Next, the substrate 1 is subjected to ion implantation, thence it is set and is irradiated with ion beams 4 of high energy, to form the resist pattern 3 into the blackened pattern 5. This blackened pattern 5 is subjected to fluoride plasma 6 treatment, whereby tetrafluoroethylene resin layer 7 is formed on the blackened pattern 5 is hardened, and the intended photomask is thus obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10834579A JPS5632143A (en) | 1979-08-24 | 1979-08-24 | Manufacture of photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10834579A JPS5632143A (en) | 1979-08-24 | 1979-08-24 | Manufacture of photomask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5632143A true JPS5632143A (en) | 1981-04-01 |
| JPS6155663B2 JPS6155663B2 (en) | 1986-11-28 |
Family
ID=14482334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10834579A Granted JPS5632143A (en) | 1979-08-24 | 1979-08-24 | Manufacture of photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5632143A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514489A (en) * | 1983-09-01 | 1985-04-30 | Motorola, Inc. | Photolithography process |
| JPS60182726A (en) * | 1984-02-29 | 1985-09-18 | Seiko Instr & Electronics Ltd | Forming method of pattern film |
| US6300042B1 (en) | 1998-11-24 | 2001-10-09 | Motorola, Inc. | Lithographic printing method using a low surface energy layer |
-
1979
- 1979-08-24 JP JP10834579A patent/JPS5632143A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4514489A (en) * | 1983-09-01 | 1985-04-30 | Motorola, Inc. | Photolithography process |
| JPS60182726A (en) * | 1984-02-29 | 1985-09-18 | Seiko Instr & Electronics Ltd | Forming method of pattern film |
| JPS6322577B2 (en) * | 1984-02-29 | 1988-05-12 | Seiko Denshi Kogyo Kk | |
| US6300042B1 (en) | 1998-11-24 | 2001-10-09 | Motorola, Inc. | Lithographic printing method using a low surface energy layer |
| US6562553B2 (en) | 1998-11-24 | 2003-05-13 | Motorola, Inc. | Lithographic printing method using a low surface energy layer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6155663B2 (en) | 1986-11-28 |
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