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JPS5630129A - Manufacture of photomask - Google Patents

Manufacture of photomask

Info

Publication number
JPS5630129A
JPS5630129A JP10547479A JP10547479A JPS5630129A JP S5630129 A JPS5630129 A JP S5630129A JP 10547479 A JP10547479 A JP 10547479A JP 10547479 A JP10547479 A JP 10547479A JP S5630129 A JPS5630129 A JP S5630129A
Authority
JP
Japan
Prior art keywords
ultraviolet rays
film
photomask
resist film
org
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10547479A
Other languages
Japanese (ja)
Inventor
Koichiro Ootori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI, Agency of Industrial Science and Technology filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP10547479A priority Critical patent/JPS5630129A/en
Publication of JPS5630129A publication Critical patent/JPS5630129A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To simplify a photomask manufacturing process and increase the accuracy of the photomask by exposing a radiation sensitive org. resist film, to electron beams, which is opaque to ultraviolet rays or far ultraviolet rays. CONSTITUTION:Radiation sensitive org. resist film 3A which is opaque to ultraviolet rays or far ultraviolet rays is directly formed on substrate 1, and a desired pattern is formed in film 3A by exposure to electron beams, development and post- baking. Using the residual portion of film 3A as a light shielding portion, pattern printing is carried out with ultraviolet rays or far ultraviolet rays. Thus, the formation of a light shielding film, the etching of the film and the removal of the residual resist film are made unnecessary as compared to a conventional method, resulting in a simplified process.
JP10547479A 1979-08-21 1979-08-21 Manufacture of photomask Pending JPS5630129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10547479A JPS5630129A (en) 1979-08-21 1979-08-21 Manufacture of photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10547479A JPS5630129A (en) 1979-08-21 1979-08-21 Manufacture of photomask

Publications (1)

Publication Number Publication Date
JPS5630129A true JPS5630129A (en) 1981-03-26

Family

ID=14408585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10547479A Pending JPS5630129A (en) 1979-08-21 1979-08-21 Manufacture of photomask

Country Status (1)

Country Link
JP (1) JPS5630129A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196483A (en) * 2000-12-25 2002-07-12 Hitachi Ltd Photomask and manufacturing method of electronic device using it
US6656644B2 (en) 2000-07-07 2003-12-02 Hitachi Ltd. Manufacturing method of photomask and photomask
US6656646B2 (en) 2001-08-31 2003-12-02 Hitachi, Ltd. Fabrication method of semiconductor integrated circuit device
US6677107B1 (en) 1999-06-30 2004-01-13 Hitacji, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
US6686108B2 (en) 2000-10-13 2004-02-03 Renesas Technology Corporation Fabrication method of semiconductor integrated circuit device
US6706452B2 (en) 2000-12-27 2004-03-16 Hitachi, Ltd. Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
US6794207B2 (en) 2000-07-07 2004-09-21 Renesas Technology Corp. Method of manufacturing integrated circuit
US6824958B2 (en) 2000-12-26 2004-11-30 Renesas Technology Corp. Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
US6927002B2 (en) 2000-12-28 2005-08-09 Renesas Technology Corp. Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method
US6939649B2 (en) 2001-10-12 2005-09-06 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device and mask
US6979525B2 (en) * 2002-03-01 2005-12-27 Renesas Technology Corp. Method of manufacturing electronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5262427A (en) * 1975-11-17 1977-05-23 Du Pont Photopolymer element and method of duplicating image
JPS5480083A (en) * 1977-12-02 1979-06-26 Iisuto Imuperiaru Intern Corp High resolution mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5262427A (en) * 1975-11-17 1977-05-23 Du Pont Photopolymer element and method of duplicating image
JPS5480083A (en) * 1977-12-02 1979-06-26 Iisuto Imuperiaru Intern Corp High resolution mask

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6677107B1 (en) 1999-06-30 2004-01-13 Hitacji, Ltd. Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
US7125651B2 (en) 1999-06-30 2006-10-24 Renesas Technology Corp. Method of manufacturing semiconductor integrated circuit device optical mask therefor, its manufacturing method, and mask blanks
US6936406B2 (en) 2000-07-07 2005-08-30 Renesas Technology Corp. Method of manufacturing integrated circuit
US6846598B2 (en) 2000-07-07 2005-01-25 Hitachi, Ltd. Manufacturing method of photomask and photomask
US6656644B2 (en) 2000-07-07 2003-12-02 Hitachi Ltd. Manufacturing method of photomask and photomask
US6958292B2 (en) 2000-07-07 2005-10-25 Renesas Technology Corp. Method of manufacturing integrated circuit
US6794207B2 (en) 2000-07-07 2004-09-21 Renesas Technology Corp. Method of manufacturing integrated circuit
US6902868B2 (en) 2000-07-07 2005-06-07 Renesas Technology Corp. Method of manufacturing integrated circuit
US6893801B2 (en) 2000-10-13 2005-05-17 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device
US6686108B2 (en) 2000-10-13 2004-02-03 Renesas Technology Corporation Fabrication method of semiconductor integrated circuit device
JP2002196483A (en) * 2000-12-25 2002-07-12 Hitachi Ltd Photomask and manufacturing method of electronic device using it
US6824958B2 (en) 2000-12-26 2004-11-30 Renesas Technology Corp. Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
US6706452B2 (en) 2000-12-27 2004-03-16 Hitachi, Ltd. Method of manufacturing photomask and method of manufacturing semiconductor integrated circuit device
US6927002B2 (en) 2000-12-28 2005-08-09 Renesas Technology Corp. Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method
US6656646B2 (en) 2001-08-31 2003-12-02 Hitachi, Ltd. Fabrication method of semiconductor integrated circuit device
US6939649B2 (en) 2001-10-12 2005-09-06 Renesas Technology Corp. Fabrication method of semiconductor integrated circuit device and mask
US6979525B2 (en) * 2002-03-01 2005-12-27 Renesas Technology Corp. Method of manufacturing electronic device

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