[go: up one dir, main page]

JPS5655947A - Photomask for far ultraviolet rays - Google Patents

Photomask for far ultraviolet rays

Info

Publication number
JPS5655947A
JPS5655947A JP13141879A JP13141879A JPS5655947A JP S5655947 A JPS5655947 A JP S5655947A JP 13141879 A JP13141879 A JP 13141879A JP 13141879 A JP13141879 A JP 13141879A JP S5655947 A JPS5655947 A JP S5655947A
Authority
JP
Japan
Prior art keywords
photomask
film
photoresist film
ultraviolet rays
titled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13141879A
Other languages
Japanese (ja)
Other versions
JPS6134670B2 (en
Inventor
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13141879A priority Critical patent/JPS5655947A/en
Publication of JPS5655947A publication Critical patent/JPS5655947A/en
Publication of JPS6134670B2 publication Critical patent/JPS6134670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

PURPOSE:To obtain the titled photomask having a long life and high precision by implanting one of Na, K, P, B, Ca, Mg, etc. into a quartz glass substrate by an ion implanting method to form a far-ultraviolet-ray absorbing layer as a light shielding layer. CONSTITUTION:Photoresist film 2 is formed on the surface of quartz glass substrate 1, and reticle pattern 2' performed with a step-and-repeater is projected on film 2. Exposed part 2' is removed by development to form opening 3 on the photoresist film 2, and one of P, Na, K, B, Ca, Mg, etc. is implanted into substrate 1 by an ion implanting method using residual photoresist film 2 as a mask to form implanted layer 4. Residual film 2 is then removed to obtain the titled photomask having a pattern protected from a flaw in washing, use and other process.
JP13141879A 1979-10-12 1979-10-12 Photomask for far ultraviolet rays Granted JPS5655947A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13141879A JPS5655947A (en) 1979-10-12 1979-10-12 Photomask for far ultraviolet rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13141879A JPS5655947A (en) 1979-10-12 1979-10-12 Photomask for far ultraviolet rays

Publications (2)

Publication Number Publication Date
JPS5655947A true JPS5655947A (en) 1981-05-16
JPS6134670B2 JPS6134670B2 (en) 1986-08-08

Family

ID=15057493

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13141879A Granted JPS5655947A (en) 1979-10-12 1979-10-12 Photomask for far ultraviolet rays

Country Status (1)

Country Link
JP (1) JPS5655947A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11022874B2 (en) * 2016-08-25 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chromeless phase shift mask structure and process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11022874B2 (en) * 2016-08-25 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chromeless phase shift mask structure and process

Also Published As

Publication number Publication date
JPS6134670B2 (en) 1986-08-08

Similar Documents

Publication Publication Date Title
JPS5630129A (en) Manufacture of photomask
JPS5655947A (en) Photomask for far ultraviolet rays
JPS57100428A (en) Method for photomechanical process
JPS5652751A (en) Photomask correcting method
JPS5742043A (en) Photosensitive material
JPS5752056A (en) Photomask
JPS54141573A (en) Mask for exposure
JPS57112025A (en) Formation of pattern
JPS5339060A (en) Lot number marking method to wafers
JPS5347825A (en) Photoresist exposure
JPS5724538A (en) Preparation of semiconductor device
JPS561534A (en) Manufacture of photomask
JPS56110232A (en) Pattern formation with soft x-ray
JPS5454579A (en) Exposure method
JPS5710232A (en) Forming method for resist pattern
JPS5670553A (en) Photomask for projection exposure
JPS5619623A (en) Photomask
JPS5621328A (en) Method of making pattern
JPS576848A (en) Photomask and its preparation
JPS56114942A (en) High energy beam sensitive resist material and its using method
JPS56144539A (en) Formation of fine pattern
JPS57212445A (en) Production of photomask
JPS57212446A (en) Photomask for far ultraviolet exposure
JPS6463956A (en) Pattern forming method
JPS5588057A (en) Production of photo mask