JPS5742043A - Photosensitive material - Google Patents
Photosensitive materialInfo
- Publication number
- JPS5742043A JPS5742043A JP11892580A JP11892580A JPS5742043A JP S5742043 A JPS5742043 A JP S5742043A JP 11892580 A JP11892580 A JP 11892580A JP 11892580 A JP11892580 A JP 11892580A JP S5742043 A JPS5742043 A JP S5742043A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photosensitive layer
- negative
- photosensitive
- anaerobic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To obtain a fine micropattern by contact exposure by forming a negative or positive type aerobic photosensitive layer on a negative or positive type anaerobic thick photosensitive layer and using the resulting material after removing a peelable protective film adhered to the other side of the anaerobic layer. CONSTITUTION:For example, on one side of a negative type anaerobic thick photosensitive layer 10 a negative type aerobic photosensitive layer 11 is formed, and on the other side a peelable protective thin film 12 is laid to manufacture a photosensitive material 9. When the material 9 is used, the film 12 is removed, the layer 10 is mounted on a substrate 16, and after bringing a photomask 14 having a pattern 15 into contact with the layer 11, the material 9 is exposed to a light source 13. The layer 11, 10 are then developed in succession to obtain a photosensitive layer pattern. Since direct contact exposure is performed unlike a conventional method carrying out exposure through a transparent protective layer and removing the layer, a micropattern of high accuracy is obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11892580A JPS5742043A (en) | 1980-08-27 | 1980-08-27 | Photosensitive material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11892580A JPS5742043A (en) | 1980-08-27 | 1980-08-27 | Photosensitive material |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5742043A true JPS5742043A (en) | 1982-03-09 |
Family
ID=14748586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11892580A Pending JPS5742043A (en) | 1980-08-27 | 1980-08-27 | Photosensitive material |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5742043A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62183119A (en) * | 1986-02-06 | 1987-08-11 | Nec Corp | X-ray exposure method |
JPH02230149A (en) * | 1987-12-16 | 1990-09-12 | Nippon Synthetic Chem Ind Co Ltd:The | Image forming method |
US4980483A (en) * | 1988-03-25 | 1990-12-25 | Nippon Shokubai Kagaku Kogyo Co., Ltd. | Method for production of maleimides |
WO2010018926A2 (en) | 2008-08-11 | 2010-02-18 | 금호석유화학 주식회사 | Method for preparing n-substituted maleimides |
-
1980
- 1980-08-27 JP JP11892580A patent/JPS5742043A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62183119A (en) * | 1986-02-06 | 1987-08-11 | Nec Corp | X-ray exposure method |
JPH02230149A (en) * | 1987-12-16 | 1990-09-12 | Nippon Synthetic Chem Ind Co Ltd:The | Image forming method |
US4980483A (en) * | 1988-03-25 | 1990-12-25 | Nippon Shokubai Kagaku Kogyo Co., Ltd. | Method for production of maleimides |
WO2010018926A2 (en) | 2008-08-11 | 2010-02-18 | 금호석유화학 주식회사 | Method for preparing n-substituted maleimides |
US8283477B2 (en) | 2008-08-11 | 2012-10-09 | Korea Kumho Petrochemical Co., Ltd. | Method for preparing N-substituted maleimides |
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