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JPS5568634A - Manufacture of mask for x-ray exposure - Google Patents

Manufacture of mask for x-ray exposure

Info

Publication number
JPS5568634A
JPS5568634A JP14310678A JP14310678A JPS5568634A JP S5568634 A JPS5568634 A JP S5568634A JP 14310678 A JP14310678 A JP 14310678A JP 14310678 A JP14310678 A JP 14310678A JP S5568634 A JPS5568634 A JP S5568634A
Authority
JP
Japan
Prior art keywords
opening
film
substrate
layer
mask pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14310678A
Other languages
Japanese (ja)
Inventor
Fumio Yamagishi
Yuji Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14310678A priority Critical patent/JPS5568634A/en
Publication of JPS5568634A publication Critical patent/JPS5568634A/en
Pending legal-status Critical Current

Links

Landscapes

  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: To correct the warp of a mask pattern carrier film, by diffusing boron into a substrate through an opening of a protective film on one side of the substrate and then etching both the sides of the substrate.
CONSTITUTION: SiO2 films 2, 11 are produced on both the sides of an Si substrate. An opening 12 is provided in the film 11 in a position corresponding to a mask pattern carrier film to make a boron-diffused layer 3. Another opening 7 is provided in the other film 2 to correspond to the former opening 12. An X-ray-permeable resinforced layer 4 is then coated on the film 11. Thin layers 5 of titanium and gold are laminated on the layer 4. Patterning and etching are effected by using a resist. The gold layer is used as an electrode to plate gold to make a mask pattern 6. Selective etching is performed through the opening 7 by a mixed liquid consisting of etchylenediamine, pyrocatechol and water to make an opening 8 and leave the SiO2 and the boron-diffused layer which are hard to dissolve. According to the present method, the warp of the mask pattern carrier surface is corrected flat and an exposure pattern of high accuracy is made.
COPYRIGHT: (C)1980,JPO&Japio
JP14310678A 1978-11-20 1978-11-20 Manufacture of mask for x-ray exposure Pending JPS5568634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14310678A JPS5568634A (en) 1978-11-20 1978-11-20 Manufacture of mask for x-ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14310678A JPS5568634A (en) 1978-11-20 1978-11-20 Manufacture of mask for x-ray exposure

Publications (1)

Publication Number Publication Date
JPS5568634A true JPS5568634A (en) 1980-05-23

Family

ID=15331039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14310678A Pending JPS5568634A (en) 1978-11-20 1978-11-20 Manufacture of mask for x-ray exposure

Country Status (1)

Country Link
JP (1) JPS5568634A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198461A (en) * 1981-05-18 1982-12-06 Philips Nv Radiant lithographic mask and manufacture thereof
JPH0334412A (en) * 1989-06-30 1991-02-14 Agency Of Ind Science & Technol X-ray mask and manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57198461A (en) * 1981-05-18 1982-12-06 Philips Nv Radiant lithographic mask and manufacture thereof
JPH0319690B2 (en) * 1981-05-18 1991-03-15 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPH0334412A (en) * 1989-06-30 1991-02-14 Agency Of Ind Science & Technol X-ray mask and manufacture thereof
JPH063791B2 (en) * 1989-06-30 1994-01-12 工業技術院長 X-ray mask and method of manufacturing the same

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