[go: up one dir, main page]

JPS57160127A - Manufacture of transcribe mask for x-ray exposure - Google Patents

Manufacture of transcribe mask for x-ray exposure

Info

Publication number
JPS57160127A
JPS57160127A JP4518181A JP4518181A JPS57160127A JP S57160127 A JPS57160127 A JP S57160127A JP 4518181 A JP4518181 A JP 4518181A JP 4518181 A JP4518181 A JP 4518181A JP S57160127 A JPS57160127 A JP S57160127A
Authority
JP
Japan
Prior art keywords
layer
insulation film
mask
electron beam
boron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4518181A
Other languages
Japanese (ja)
Inventor
Yasuo Iida
Katsumi Mori
Nobuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4518181A priority Critical patent/JPS57160127A/en
Publication of JPS57160127A publication Critical patent/JPS57160127A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To form a X-ray absorption pattern having a large sticking force by a method wherein electron beam irradiation is provided for a metal layer stacked on a silicon wafer and the irradiated portion is converted into silicide. CONSTITUTION:A layer 102 of thickness of 0.1-0.5mum, adding to it the boron of more than 5X10<10>cm<-3> is formed on the surface of silicon substrate 101 and a gold or platinum layer 103 of 0.1-0.5mum thickness is stacked on a boron adding layer 102. Then, the electron beam over 1A/cm<2> current density, of 20- 100kV acceleration voltage and 50nA-10muA current value is irradiated against the layer 103 to drawn the pattern and the irradiated portion is heated at over 350 deg.C and for a second or more to form a metal silicide 207. After an insulation film 401 is formed in the back face of the insulation film 401, the insulation film 401 is removed selectively and the remaining insulation film 401 is used for a mask to remove the substrate 101, thereby forming a reinforced support assembly 501.
JP4518181A 1981-03-27 1981-03-27 Manufacture of transcribe mask for x-ray exposure Pending JPS57160127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4518181A JPS57160127A (en) 1981-03-27 1981-03-27 Manufacture of transcribe mask for x-ray exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4518181A JPS57160127A (en) 1981-03-27 1981-03-27 Manufacture of transcribe mask for x-ray exposure

Publications (1)

Publication Number Publication Date
JPS57160127A true JPS57160127A (en) 1982-10-02

Family

ID=12712092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4518181A Pending JPS57160127A (en) 1981-03-27 1981-03-27 Manufacture of transcribe mask for x-ray exposure

Country Status (1)

Country Link
JP (1) JPS57160127A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPS61173250A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Photomask material
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPS6252551A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPS63255918A (en) * 1987-04-13 1988-10-24 Nissin Electric Co Ltd Mask for x-ray exposure and manufacture thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874793A (en) * 1971-12-30 1973-10-08
JPS5473573A (en) * 1977-11-24 1979-06-12 Nec Corp Transfer mask for x-ray lithography and production of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4874793A (en) * 1971-12-30 1973-10-08
JPS5473573A (en) * 1977-11-24 1979-06-12 Nec Corp Transfer mask for x-ray lithography and production of the same

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPH0476101B2 (en) * 1984-10-16 1992-12-02 Mitsubishi Electric Corp
JPS61173250A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Photomask material
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
JPH0434141B2 (en) * 1985-01-28 1992-06-05 Mitsubishi Electric Corp
JPH0434142B2 (en) * 1985-01-28 1992-06-05 Mitsubishi Electric Corp
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPS6252551A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPH0435743B2 (en) * 1985-08-30 1992-06-12 Mitsubishi Electric Corp
JPH0469933B2 (en) * 1985-08-30 1992-11-09 Mitsubishi Electric Corp
JPS63255918A (en) * 1987-04-13 1988-10-24 Nissin Electric Co Ltd Mask for x-ray exposure and manufacture thereof

Similar Documents

Publication Publication Date Title
JPS57130430A (en) Pattern formation
JPS56144577A (en) Production of semiconductor device
JPS57160127A (en) Manufacture of transcribe mask for x-ray exposure
JPS5637635A (en) Manufacture of semiconductor device
JPS57168246A (en) Formation of negative pattern
JPS52119172A (en) Forming method of fine pattern
JPS57168247A (en) Formation of negative pattern
EP0098922A3 (en) Process for selectively generating positive and negative resist patterns from a single exposure pattern
JPS5726170A (en) Formation of al or al alloy pattern
JPS564238A (en) Forming of pattern
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5619045A (en) Electron beam sensitive inorganic resist
JPS57207338A (en) Method for treating resist film for electron beam
JPS57141641A (en) Formation of positive pattern
GB2121980B (en) X ray masks
JPS5596681A (en) Method of fabricating semiconductor device
JPS5710930A (en) Dry development method
JPS5496371A (en) Mask forming method
JPS5655943A (en) Pattern forming method
JPS6481228A (en) Pattern forming method
JPS5664336A (en) Minute pattern forming method
JPS57122530A (en) Photoetching method
JPS57107040A (en) Manufacture of semiconductor device
JPS56115534A (en) Formation of pattern
JPS565545A (en) Transfer mask for x-ray exposure and its production