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JPS5461478A - Chromium plate - Google Patents

Chromium plate

Info

Publication number
JPS5461478A
JPS5461478A JP12828077A JP12828077A JPS5461478A JP S5461478 A JPS5461478 A JP S5461478A JP 12828077 A JP12828077 A JP 12828077A JP 12828077 A JP12828077 A JP 12828077A JP S5461478 A JPS5461478 A JP S5461478A
Authority
JP
Japan
Prior art keywords
chromium
layer
film
tungsten
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12828077A
Other languages
Japanese (ja)
Other versions
JPS5931975B2 (en
Inventor
Kyusaku Nishioka
Yukimichi Kanedaki
Mitsuru Yamada
Jun Uno
Haruyuki Hoshika
Teruhiko Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP52128280A priority Critical patent/JPS5931975B2/en
Publication of JPS5461478A publication Critical patent/JPS5461478A/en
Publication of JPS5931975B2 publication Critical patent/JPS5931975B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE: To enable negative and positive inversion in the stage of etching, by coating the oxide chromium film including high melting point metal such as chromium film as the first layer and tungsten for the second layer on the transparent subsstrate.
CONSTITUTION: The chromium oxide film 5 is coated on the transparent substrate 1 for the chromium film 2 for the first layer and tungsten as the second layer. Further, after forming the mask 4, when gas plasma etching is made, the chromium film 2 under the mask 4 and the chromium oxide film 5 including tungsten are etched and no etching is made for the part of the surface exposed
COPYRIGHT: (C)1979,JPO&Japio
JP52128280A 1977-10-25 1977-10-25 How to make an inversion mask Expired JPS5931975B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52128280A JPS5931975B2 (en) 1977-10-25 1977-10-25 How to make an inversion mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52128280A JPS5931975B2 (en) 1977-10-25 1977-10-25 How to make an inversion mask

Publications (2)

Publication Number Publication Date
JPS5461478A true JPS5461478A (en) 1979-05-17
JPS5931975B2 JPS5931975B2 (en) 1984-08-06

Family

ID=14980911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52128280A Expired JPS5931975B2 (en) 1977-10-25 1977-10-25 How to make an inversion mask

Country Status (1)

Country Link
JP (1) JPS5931975B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186337A (en) * 1981-05-11 1982-11-16 Mitsubishi Electric Corp Forming method for fine pattern
JPS5950528A (en) * 1982-09-14 1984-03-23 Nippon Telegr & Teleph Corp <Ntt> Formation of minute pattern
JPS5999738A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS59141227A (en) * 1983-02-01 1984-08-13 Mitsubishi Electric Corp Formation of fine pattern
JPS60239026A (en) * 1984-05-10 1985-11-27 Mitsubishi Electric Corp Formation of pattern according to dry etching

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186337A (en) * 1981-05-11 1982-11-16 Mitsubishi Electric Corp Forming method for fine pattern
JPS5950528A (en) * 1982-09-14 1984-03-23 Nippon Telegr & Teleph Corp <Ntt> Formation of minute pattern
JPS5999738A (en) * 1982-11-29 1984-06-08 Fujitsu Ltd Manufacture of semiconductor device
JPS59141227A (en) * 1983-02-01 1984-08-13 Mitsubishi Electric Corp Formation of fine pattern
JPS60239026A (en) * 1984-05-10 1985-11-27 Mitsubishi Electric Corp Formation of pattern according to dry etching

Also Published As

Publication number Publication date
JPS5931975B2 (en) 1984-08-06

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