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JPS57157249A - Preparation of optical exposure mask - Google Patents

Preparation of optical exposure mask

Info

Publication number
JPS57157249A
JPS57157249A JP4218381A JP4218381A JPS57157249A JP S57157249 A JPS57157249 A JP S57157249A JP 4218381 A JP4218381 A JP 4218381A JP 4218381 A JP4218381 A JP 4218381A JP S57157249 A JPS57157249 A JP S57157249A
Authority
JP
Japan
Prior art keywords
layer
pattern
mask
silicide
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4218381A
Other languages
Japanese (ja)
Other versions
JPS6340306B2 (en
Inventor
Nobuhiro Endo
Katsumi Mori
Yasuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4218381A priority Critical patent/JPS57157249A/en
Publication of JPS57157249A publication Critical patent/JPS57157249A/en
Publication of JPS6340306B2 publication Critical patent/JPS6340306B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To obtain a high-precision mask, by laminating a silicon layer and a metal layer capable of forming a metallic silicide on a transparent substrate, depicting a pattern with electron beams to form silicide on the pattern, and removing either the layer just on the pattern or the layer excluding that on the pattern. CONSTITUTION:An about 50nm thick silicon layer 102 is formed on a transparent substrate 101 made of glass or the like. An about 50nm thick metallic layer 103 capable of forming a silicide of metal, such as Pt is vapor deposited onto the layer 102. A Pt2Si or PtSi layer 104 is formed on the incident parts of the layer 103 by patternwise injecting electron beams. The layer 104 is etched away with aqua regia, and then, the layer 102 is removed with a mixture of glacial acetic acid-nitric acid-hydrofluoric acid to leave the layer 104. Since the layer 104 is resistant to both of the etching solution, a mask high in precision and resolution is obtained. A positive mask with the layers 102, 103 left can be also obtained by using an etching agent capable of etching the layer 104.
JP4218381A 1981-03-23 1981-03-23 Preparation of optical exposure mask Granted JPS57157249A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4218381A JPS57157249A (en) 1981-03-23 1981-03-23 Preparation of optical exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4218381A JPS57157249A (en) 1981-03-23 1981-03-23 Preparation of optical exposure mask

Publications (2)

Publication Number Publication Date
JPS57157249A true JPS57157249A (en) 1982-09-28
JPS6340306B2 JPS6340306B2 (en) 1988-08-10

Family

ID=12628879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4218381A Granted JPS57157249A (en) 1981-03-23 1981-03-23 Preparation of optical exposure mask

Country Status (1)

Country Link
JP (1) JPS57157249A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
JPS61173250A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Photomask material
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPS6252551A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
EP0213693A2 (en) * 1985-08-30 1987-03-11 Mitsubishi Denki Kabushiki Kaisha Photomask material
WO2000017710A1 (en) * 1998-09-17 2000-03-30 Quantiscript Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2002063394A1 (en) * 2001-02-05 2002-08-15 Quantiscript Inc. Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6195356A (en) * 1984-10-16 1986-05-14 Mitsubishi Electric Corp Photomask material
JPH0476101B2 (en) * 1984-10-16 1992-12-02 Mitsubishi Electric Corp
JPS61173251A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Production of photomask
JPS61173250A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Photomask material
JPS61173252A (en) * 1985-01-28 1986-08-04 Mitsubishi Electric Corp Formation of photomask material
JPH0434141B2 (en) * 1985-01-28 1992-06-05 Mitsubishi Electric Corp
JPH0434142B2 (en) * 1985-01-28 1992-06-05 Mitsubishi Electric Corp
US4876164A (en) * 1985-01-28 1989-10-24 Mitsubishi Denki Kabushiki Kaisha Process for manufacturing a photomask
US4783371A (en) * 1985-08-30 1988-11-08 Mitsubishi Denki Kabushiki Kaisha Photomask material
US4717625A (en) * 1985-08-30 1988-01-05 Mitsubishi Denki Kabushiki Kaisha Photomask material
EP0213693A2 (en) * 1985-08-30 1987-03-11 Mitsubishi Denki Kabushiki Kaisha Photomask material
JPS6252550A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
JPH0435743B2 (en) * 1985-08-30 1992-06-12 Mitsubishi Electric Corp
JPH0469933B2 (en) * 1985-08-30 1992-11-09 Mitsubishi Electric Corp
JPS6252551A (en) * 1985-08-30 1987-03-07 Mitsubishi Electric Corp Photomask material
US6261938B1 (en) 1997-02-12 2001-07-17 Quantiscript, Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2000017710A1 (en) * 1998-09-17 2000-03-30 Quantiscript Inc. Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
WO2002063394A1 (en) * 2001-02-05 2002-08-15 Quantiscript Inc. Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography
US6897140B2 (en) 2001-02-05 2005-05-24 Quantiscript, Inc. Fabrication of structures of metal/semiconductor compound by X-ray/EUV projection lithography

Also Published As

Publication number Publication date
JPS6340306B2 (en) 1988-08-10

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