[go: up one dir, main page]

JPS5469091A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5469091A
JPS5469091A JP13608877A JP13608877A JPS5469091A JP S5469091 A JPS5469091 A JP S5469091A JP 13608877 A JP13608877 A JP 13608877A JP 13608877 A JP13608877 A JP 13608877A JP S5469091 A JPS5469091 A JP S5469091A
Authority
JP
Japan
Prior art keywords
film
mask
etching
wiring layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13608877A
Other languages
Japanese (ja)
Inventor
Masahiko Yasuoka
Kazushi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13608877A priority Critical patent/JPS5469091A/en
Publication of JPS5469091A publication Critical patent/JPS5469091A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To obtain a wiring layer featuring a minute pattern by coating the Al film to be a wiring layer onto the semiconductor substrate via the SiO2 film and then giving the plasma etching to the Al film via the Al2O3 film changed partially to the anode used as the mask.
CONSTITUTION: SiO2 film 2 is coated on Si substrate 1, and Al film to be the wiring layer is formed on film 2 to be covered with a sensitive resin film featuring the fixed mask pattern. Using this mask film, the anode oxidation is given to change the exposed area of film 3 into thick Al2O3 film 11. After this, the mask is removed and the exposed area of film 3 is removed through the plasma etching with film 11 grown used as the mask. In this case, the following etching device is used. That is stainless chamber 5 is used with parallel electrode 6 and 7 distributed, and substrate 1 is placed on electrode 7 to carry out the etching via the SiCl2 gas. In such way, a minute pattern can be obtained for film 3 under film 11 since the etching velocity is less than 1/100 of the film 3 speed.
COPYRIGHT: (C)1979,JPO&Japio
JP13608877A 1977-11-11 1977-11-11 Manufacture of semiconductor device Pending JPS5469091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13608877A JPS5469091A (en) 1977-11-11 1977-11-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13608877A JPS5469091A (en) 1977-11-11 1977-11-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5469091A true JPS5469091A (en) 1979-06-02

Family

ID=15166966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13608877A Pending JPS5469091A (en) 1977-11-11 1977-11-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5469091A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690539A (en) * 1979-12-24 1981-07-22 Nec Corp Production of semiconductor device
JPS5740958A (en) * 1980-08-25 1982-03-06 Mitsubishi Electric Corp Formation of wiring pattern

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum
JPS52120782A (en) * 1976-04-05 1977-10-11 Nec Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51141741A (en) * 1975-05-22 1976-12-06 Ibm Method of selectively removing aluminum
JPS52120782A (en) * 1976-04-05 1977-10-11 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690539A (en) * 1979-12-24 1981-07-22 Nec Corp Production of semiconductor device
JPS5740958A (en) * 1980-08-25 1982-03-06 Mitsubishi Electric Corp Formation of wiring pattern

Similar Documents

Publication Publication Date Title
JPS5595340A (en) Preparation of semiconductor device
JPS5469090A (en) Manufacture of semiconductor device
JPS52120782A (en) Manufacture of semiconductor device
JPS5469091A (en) Manufacture of semiconductor device
JPS556844A (en) Method of formating wiring pattern
JPS5233490A (en) Manufacturing process of semiconductor device
JPS5461478A (en) Chromium plate
JPS5382275A (en) Production of semiconductor device
JPS53146300A (en) Production of silicon carbide substrate
JPS5496363A (en) Electrode forming method for semiconductor device
JPS543473A (en) Manufacture of semiconductor device
JPS5555547A (en) Method of forming electrode and wiring layer of semiconductor device
JPS543470A (en) Etching method
JPS5455378A (en) Production of semiconductor device
JPS5555532A (en) Method of manufacturing semiconductor integrated circuit
JPS5544765A (en) Manufacture of semiconductor
JPS54140884A (en) Manufacture of semiconductor device
JPS54133088A (en) Semiconductor device
JPS52117550A (en) Electrode formation method
JPS5267973A (en) Semiconductor unit
JPS5353280A (en) Manufacture for semiconductor device
JPS55134932A (en) Preparation of semiconductor device
JPS5475275A (en) Manufacture of semiconductor device
JPS5493360A (en) Plasma etching method
JPS5396673A (en) Gas plasma etching method for sio2 film