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JPS5382275A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5382275A
JPS5382275A JP15755976A JP15755976A JPS5382275A JP S5382275 A JPS5382275 A JP S5382275A JP 15755976 A JP15755976 A JP 15755976A JP 15755976 A JP15755976 A JP 15755976A JP S5382275 A JPS5382275 A JP S5382275A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
polycrystalline
emitter
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15755976A
Other languages
Japanese (ja)
Other versions
JPS5619742B2 (en
Inventor
Hiroshi Horie
Koichiro Kotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15755976A priority Critical patent/JPS5382275A/en
Publication of JPS5382275A publication Critical patent/JPS5382275A/en
Publication of JPS5619742B2 publication Critical patent/JPS5619742B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain an emitter of a submicron width at high accuracy by growing a polycrystalline Si layer containing boron on a Si substrate, covering emitter and base contact portions with a Si3N4 film oxidizing the polycrystalline Si layer and making use of its going around to the underside of the Si3N4 film of this time.
COPYRIGHT: (C)1978,JPO&Japio
JP15755976A 1976-12-28 1976-12-28 Production of semiconductor device Granted JPS5382275A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15755976A JPS5382275A (en) 1976-12-28 1976-12-28 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15755976A JPS5382275A (en) 1976-12-28 1976-12-28 Production of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5382275A true JPS5382275A (en) 1978-07-20
JPS5619742B2 JPS5619742B2 (en) 1981-05-09

Family

ID=15652319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15755976A Granted JPS5382275A (en) 1976-12-28 1976-12-28 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5382275A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device
JPS5574182A (en) * 1978-11-29 1980-06-04 Matsushita Electric Ind Co Ltd Preparing junction type field effect transistor
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS56153757A (en) * 1980-04-30 1981-11-27 Nec Corp Semiconductor device
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563821A (en) * 1978-11-06 1980-05-14 Nec Corp Semiconductor device
JPS6256670B2 (en) * 1978-11-06 1987-11-26 Nippon Electric Co
JPS5574182A (en) * 1978-11-29 1980-06-04 Matsushita Electric Ind Co Ltd Preparing junction type field effect transistor
JPS6157714B2 (en) * 1978-11-29 1986-12-08 Matsushita Electric Ind Co Ltd
JPS5617066A (en) * 1979-07-16 1981-02-18 Trw Inc Method of manufacturing semiconductor electric converter
JPS56153757A (en) * 1980-04-30 1981-11-27 Nec Corp Semiconductor device
JPS6346987B2 (en) * 1980-04-30 1988-09-20 Nippon Electric Co
JPS5756976A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of junction type field effect transistor

Also Published As

Publication number Publication date
JPS5619742B2 (en) 1981-05-09

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