[go: up one dir, main page]

JPS5616126A - Exposing method - Google Patents

Exposing method

Info

Publication number
JPS5616126A
JPS5616126A JP9141679A JP9141679A JPS5616126A JP S5616126 A JPS5616126 A JP S5616126A JP 9141679 A JP9141679 A JP 9141679A JP 9141679 A JP9141679 A JP 9141679A JP S5616126 A JPS5616126 A JP S5616126A
Authority
JP
Japan
Prior art keywords
ratio
film
thickness reduction
type negative
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9141679A
Other languages
Japanese (ja)
Inventor
Kazuaki Yamanochi
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9141679A priority Critical patent/JPS5616126A/en
Publication of JPS5616126A publication Critical patent/JPS5616126A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To obtain a minute pattern of high precision by projection-exposing a polyisoprene type negative photoresist film having the ratio of infrared absorbances near specified two wave numbers in a specified range to minimize a thickness reduction of the photoresist.
CONSTITUTION: In projection exposure for forming the image of a photomask on the surface of a semiconductor substrate or the like, considering infrared absorbences near wave number 820[cm-1] and 880[cm-1] to be I1 and I2, respectively and the ratio of I2/I2 to be IR, a polyisoprene type negative photoresist having 1Wunder 1.25 IR is applied to the substrate surface and exposed. Thus, the photoresist film can be prevented from being broken at the shoulders of each protrusion of the substrate surface owing to a thickness reduction of the film by the action of O2 in air in projection exposure, and a minute pattern is formed with accuracy.
COPYRIGHT: (C)1981,JPO&Japio
JP9141679A 1979-07-18 1979-07-18 Exposing method Pending JPS5616126A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9141679A JPS5616126A (en) 1979-07-18 1979-07-18 Exposing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9141679A JPS5616126A (en) 1979-07-18 1979-07-18 Exposing method

Publications (1)

Publication Number Publication Date
JPS5616126A true JPS5616126A (en) 1981-02-16

Family

ID=14025762

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9141679A Pending JPS5616126A (en) 1979-07-18 1979-07-18 Exposing method

Country Status (1)

Country Link
JP (1) JPS5616126A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313734A (en) * 1987-06-17 1988-12-21 Kowa Co syrup

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013029A (en) * 1973-04-11 1975-02-10
JPS5370817A (en) * 1976-12-07 1978-06-23 Tokyo Ouka Kougiyou Kk Improved photoregist composite

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013029A (en) * 1973-04-11 1975-02-10
JPS5370817A (en) * 1976-12-07 1978-06-23 Tokyo Ouka Kougiyou Kk Improved photoregist composite

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63313734A (en) * 1987-06-17 1988-12-21 Kowa Co syrup

Similar Documents

Publication Publication Date Title
EP0095209A3 (en) Method of forming a resist mask resistant to plasma etching
JPS5321576A (en) Mask for x-ray exposure
JPS5616126A (en) Exposing method
EP0517923A4 (en) Method of forming minute resist pattern
JPS5580323A (en) Pattern forming method for photoresist-film
JPS54141573A (en) Mask for exposure
JPS56116625A (en) Exposure of fine pattern
JPS55138839A (en) Method of fabricating semiconductor device
JPS5680130A (en) Manufacture of semiconductor device
JPS5443681A (en) Electron beam light-exposing method
JPS5339060A (en) Lot number marking method to wafers
JPS5655950A (en) Photographic etching method
JPS57176040A (en) Preparation of photomask
JPS5642234A (en) Photomask preparation
JPS56108880A (en) Selectively etching method for silicon oxide film
JPS57118641A (en) Lifting-off method
JPS5456368A (en) Sticking preventing method of photo masks
JPS5635774A (en) Dry etching method
JPS5568634A (en) Manufacture of mask for x-ray exposure
JPS5437579A (en) Chrome plate
JPS5763829A (en) Pattern forming method
JPS5376397A (en) Photo mask for manufacturing magnetic bubble element
JPS5527637A (en) Photo-resist-pattern forming method
JPS5699342A (en) Manufacture of photomask
JPS55107232A (en) Method of forming pattern of resist layer