JPS5688358A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5688358A JPS5688358A JP16552679A JP16552679A JPS5688358A JP S5688358 A JPS5688358 A JP S5688358A JP 16552679 A JP16552679 A JP 16552679A JP 16552679 A JP16552679 A JP 16552679A JP S5688358 A JPS5688358 A JP S5688358A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type region
- window
- windows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To eliminate the pitch displacement between the electrode pattern and the semiconductor device by covering an insulating film on one conductivity type region, simultaneously forming windows for mounting electrode terminal and for forming reverse conductivity type region when opening both the windows and then diffusing the reverse conductivity type region. CONSTITUTION:An N type layer 2 is epitaxially grown on an N type Si substrate 1, a P type region 3 is diffused therein, and an SiO2 film is covered on the entire surface including the region 3. Then, the windows 5 and 6 for mounting the electrode terminal on the film 4 and for diffusing the N type region 11 are simultaneously opened on the region 3, an SiO2 film 7 and an Si3N4 film 8 are laminated on the entire surface thereof. Thereafter, the laminated film on the window 6 is removed by etching it with the photoresist film as a mask, an SiO2 film 10 is covered on the bottom surface and the side walls in the window 6, ions are injected thereto, and it is heat treated, and an N type region 11 is thus formed in the region 11. Subsequently, the films 7, 8 are removed, and the window 5 thus formed previously is exposed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16552679A JPS5688358A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16552679A JPS5688358A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5688358A true JPS5688358A (en) | 1981-07-17 |
JPS5712307B2 JPS5712307B2 (en) | 1982-03-10 |
Family
ID=15814060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16552679A Granted JPS5688358A (en) | 1979-12-21 | 1979-12-21 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688358A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759379A (en) * | 1980-09-27 | 1982-04-09 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS61236162A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS61236161A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS61236163A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS6314475A (en) * | 1986-07-04 | 1988-01-21 | Nec Corp | Manufacture of semiconductor device |
JPS63205959A (en) * | 1987-02-21 | 1988-08-25 | Matsushita Electric Works Ltd | Manufacture of electrostatic induction semiconductor device |
-
1979
- 1979-12-21 JP JP16552679A patent/JPS5688358A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5759379A (en) * | 1980-09-27 | 1982-04-09 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS61236162A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS61236161A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS61236163A (en) * | 1985-04-11 | 1986-10-21 | Rohm Co Ltd | Manufacturing method of semiconductor device |
JPS6314475A (en) * | 1986-07-04 | 1988-01-21 | Nec Corp | Manufacture of semiconductor device |
JPS63205959A (en) * | 1987-02-21 | 1988-08-25 | Matsushita Electric Works Ltd | Manufacture of electrostatic induction semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5712307B2 (en) | 1982-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5688358A (en) | Manufacture of semiconductor device | |
JPS5562771A (en) | Integrated circuit device | |
JPS54161282A (en) | Manufacture of mos semiconductor device | |
JPS5617039A (en) | Semiconductor device | |
JPS54130883A (en) | Production of semiconductor device | |
JPS56111264A (en) | Manufacture of semiconductor device | |
JPS572519A (en) | Manufacture of semiconductor device | |
JPS5515230A (en) | Semiconductor device and its manufacturing method | |
JPS5513953A (en) | Complementary integrated circuit | |
JPS5456357A (en) | Production of semiconductor device | |
JPS5526687A (en) | Manufacturing semiconductor device | |
JPS5791537A (en) | Manufacture of semiconductor device | |
JPS567482A (en) | Manufacturing of semiconductor device | |
JPS5773977A (en) | Manufacture of semiconductor device | |
JPS5793525A (en) | Manufacture of semiconductor device | |
JPS5664467A (en) | Mos type semiconductor device | |
JPS56135970A (en) | Semiconductor device | |
JPS57193062A (en) | Manufacture of semiconductor device | |
JPS56148825A (en) | Manufacture of semiconductor device | |
JPS5556646A (en) | Manufacture of semiconductor device | |
JPS575329A (en) | Manufacture of semiconductor device | |
JPS5642372A (en) | Manufacture of semiconductor device | |
JPS5610945A (en) | Manufacture of semiconductor device | |
JPS5710246A (en) | Manufacture of semiconductor device | |
JPS5661156A (en) | Preparation of semiconductor resistor |